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1.
X-ray powder diffraction and magnetization measurements were done on the magnetic shape memory alloys Ni2Mn1+xIn1−x. On the basis of the results, the magnetic phase diagram was determined for Ni2Mn1+xIn1−x alloys. Magnetization measurements make clear that the excess Mn atoms, which substitute for In sites, are coupled ferromagnetically to the ferromagnetic manganese sublattices. A magnetic phase diagram of Ni2Mn1+xIn1−x alloys is discussed qualitatively on the basis of the interatomic dependence of the exchange interactions.  相似文献   

2.
We have studied the conduction band profile and the intersubband transition energy, E12, of Al1−yInyN/Ga1−xInxN quantum well structures. We have considered how material parameters such as non-parabolicity and the uncertainty in the bowing parameter affect E12 and the corresponding wavelength, λ12. The calculations include strain and cover the transition range from telecommunication wavelengths (1.55 μm) to the mid-infrared (∼ 10 μm).  相似文献   

3.
First principles density functional calculations, using full potential linearized augmented plane wave (FP-LAPW) method, have been performed in order to investigate the structural, electronic and optical properties of CaxZn1−xO alloy in B1 (NaCl) phase. Dependence of structural parameters as well as the band gap values on the composition x have been analyzed in the range 0?x?1. Calculated electronic structure and the density of states of these alloys are discussed in terms of the contribution of Zn d, O p and Ca p and d states. Furthermore, optical properties such as complex dielectric constants ε(ω), refractive index including extinction coefficient k(ω), normal-incidence reflectivity R(ω), absorption coefficient α(ω) and optical conductivity σ(ω) are calculated and discussed in the incident photon energy range 0-45 eV.  相似文献   

4.
Cd1−xMnxTe thin films were fabricated by thermal interdiffusion of multilayers of sputtered compound semiconductors as well as thermally evaporated elements. Electron microscopy revealed their nanostructures. The alloys have been investigated for evaluation of optical and electronic parameters. Spectrophotometry helped to find out the bandgap and composition; photoluminescence was used for observing relative transition probabilities at room temperature. Photoresponse showed the light dependence of the resistance of the alloy films. Hall measurements and four-probe tests indicated the influence of manganese on the room-temperature electronic properties of the alloy.  相似文献   

5.
X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), magnetization and magnetic susceptibility of Mn1−xAlxNi alloys are reported. A change in the crystallographic structure takes place around x=0.4 from CuAuI to CsCl (B2) structure type. For x0.5 a mixed B2+L21 state exists which incorporates antiferromagnetic (B2) and ferromagnetic (L21) parts. A direct evidence for the existence of local moments on Mn sites in Mn1-xAlxNi alloys is given by the exchange splitting of XPS Mn 3s and Mn 2p3/2 core levels. The gradual filling of the Ni 3d band as the Al concentration increases can be explained by the hybridization of the Ni 3d band and Al 3sp states.  相似文献   

6.
It is expected that joint existence of ferromagnetic properties and ferroelectric structural phase transition in diluted magnetic semiconductors IV-VI leads to new possibilities of these materials. Temperature of ferroelectric transition for such crystals can be tuned by the change of Sn/Ge ratio. Magnetic susceptibility, Hall effect, resistivity and thermoelectric power of Ge1−xySnxMnyTe single crystals grown by Bridgeman method (x=0.083-0.115; y=0.025-0.124) were investigated within 4.2-300 K. An existence of FM ordering at TC∼50 K probably due to indirect exchange interaction between Mn ions via degenerated hole gas was revealed. A divergence of magnetic moment temperature dependences at T?TC in field-cooled and zero-field-cooled regimes is obliged to magnetic clusters which are responsible for superparamagnetism at T>TCTf (freezing temperature) and become ferromagnetic at TC arranging spin glass state at T<TfTC. Phase transition of ferroelectric type at T≈46 K was revealed. Anomalous Hall effect which allows to determine magnetic moment was observed.  相似文献   

7.
A series of first principles calculations have been carried out to study structural, electronic properties of BaSxSe1−x alloys. We have used the local density as well as the generalized gradient approximations for the exchange-correlation potential. The structural properties of these materials, in particular the composition dependence to the lattice constant and bulk modulus, are found to be linear. It is also found linear relationship between theoretical band gaps and 1/a2 (where a is lattice constant).  相似文献   

8.
Optical absorption at room temperature of vacuum evaporated GexTe1−x (0.125?x?0.225) amorphous thin films has been studied as a function of composition. It was found that the optical absorption is due to a direct transition. The real and imaginary parts of the dielectric constant were determined. The single-oscillator energy (Eo) and the energy dispersion parameter (Ed) have been calculated and discussed in terms of the Wemple and Di-Domenico model. The relationship between the optical gap, the average heat of atomization and the coordination numbers has been determined. The optical properties of the amorphous thin films do not change monotonically with increasing Ge content. The observed behavior of the optical properties in the range of compositions studied are explained on the basis of the Bond Constraint Theory (BCT) and rigidity theory, which provide a powerful framework for understanding the structure and properties of amorphous materials. The non-monotonic variation of the optical properties indicates that a transition from floppy to rigid occurs in the GexTe1−x films.  相似文献   

9.
Uniform and transparent thin films of Zn1−xMnxO (0?x?0.10) were fabricated by a sol-gel spin coating method. XRD results indicated the hexagonal structure of ZnO as the primary phase at all concentrations (x) of Mn. However, at x?0.035, Mn3O4 (tetragonal) is observed as the secondary phase, which was confirmed by selected-area electron diffraction patterns. SEM and TEM results showed a tendency of grains to arrange into wire-shaped morphologies, leading to elongated needle-like structures at high Mn addition. Increasing Mn content in the range 0?x?0.10 led to quenching of photoluminescence, increase in the band gap (Eg) from 3.27 to 3.33 eV, and increase in film thickness, refractive index and extinction coefficient of Zn1−xMnxO thin films. The residual stress evaluated was compressive in all cases and found to increase by an order of magnitude with addition of Mn. Furthermore, an overall increase in microhardness and yield strength of Zn1−xMnxO thin films at higher Mn concentrations is attributed to change in microstructures, presence of secondary phase and increase in film thickness.  相似文献   

10.
11.
The structural and magnetic properties of epitaxial In1−xMnxAs1−yPy quaternary layers with Mn content ranging from 0.01 to 0.04 and phosphorous content ranging from 0.11 to 0.21 were studied. X-ray diffraction indicated that the films were two phase consisting of an InMnAsP solid solution and hexagonal MnAs nanoprecipitates. Addition of phosphorus promoted precipitate formation. Films were ferromagnetic showing hysteretic behavior in the field dependence of magnetization at 5 and 298 K. From field-cooled magnetization measurements ferromagnetic transitions were observed at 280 and 325 K. The zero field-cooled magnetization versus temperature measurements showed irreversibility for T<300 K that was attributed to the presence of MnAs nanoprecipitates. The calculated coercivity using the Neel model was 1380 G compared to the experimental value of 380 G at 5 K. The difference was attributed to a strong inter-cluster exchange that stabilizes the ferromagnetic state.  相似文献   

12.
The electronic, optical and structural properties of ZnxCd1−xSySe1−y quaternary alloys lattice matched to GaAs and InP are studied. The electronic band structure and density of states are computed using empirical pseudopotential method. The disorder effects are included via modified virtual crystal approximation. The bandgap computed from band structures are utilized to evaluate refractive indices, dielectric constants and ionicity factors for the alloys. Among structural properties elastic constants and bulk moduli are computed by combining the EPM with Harrison bond orbital model. All possible semiconductors from the ZnCdSSe system are found to have direct bandgap. The lattice matched alloys have larger band gap and more ionic character than the lattice matched compounds.  相似文献   

13.
Gd3+-substituted micro-octahedron composites (FexCo1−x/CoyGdzFe3−yzO4) in which the Fe-Co alloy has either a bcc or fcc structure and the oxide is a spinel phase were fabricated by the hydrothermal method. The X-ray diffraction (XRD) patterns indicate that the as-synthesized Gd3+-substituted micro-octahedron composites are well crystallized. Scanning electron microscopy (SEM) images show that the final product consists of larger numbers of micro-octahedrons with the size ranging from 1.3 to 5 μm, and the size of products are increased with increasing the concentration of KOH. The effect of the Co2+/Fe2+ ratio (0?Co2+/Fe2+?1) and substitution Fe3+ ions by Gd3+ ions on structure, magnetic properties of the micro-octahedrons composites were investigated, and a possible growth mechanism is suggested to explain the formation of micro-octahedrons composites. The magnetic properties of the structure show the maximal saturation magnetization (107 emu/g) and the maximal coercivity (1192 Oe) detected by a vibrating sample magnetometer.  相似文献   

14.
Nanocrystalline Al-doped nickel ferrite powders have been synthesized by sol–gel auto-ignition method and the effect of non-magnetic aluminum content on the structural and magnetic properties has been studied. The X-ray diffraction (XRD) revealed that the powders obtained are single phase with inverse spinel structure. The calculated grain sizes from XRD data have been verified using transmission electron microscopy (TEM). TEM photographs show that the powders consist of nanometer-sized grains. It was observed that the characteristic grain size decreases from 29 to 6 nm as the non-magnetic Al content increases, which was attributed to the influence of non-magnetic Al concentration on the grain size. Magnetic hysteresis loops were measured at room temperature with a maximum applied magnetic field of ≈1 T. As aluminum content increases, the measured magnetic hysteresis curves become more and more narrow and the saturation magnetization and remanent magnetization both decreased. The reduction of magnetization compared to bulk is a consequence of spin non-collinearity. Further reduction of magnetization with increase of aluminum content is caused by non-magnetic Al3+ ions and weakened interaction between sublattices. This, as well as the decrease in hysteresis was understood in terms of the decrease in particle size.  相似文献   

15.
First-principles calculations of electronic structure and magnetic properties based on density-functional theory were performed for MnFeP1−xSix (0.44?x?0.60) alloys which are considered as promising magnetocaloric refrigerants. We used the full-potential APW+lo method and treated the random order of P(Si) atoms in the ZrNiAl-type structure in a virtual-crystal approximation. A non-monotonic behavior of the alloy magnetization as a function of x was obtained, in qualitative agreement with experiment, and explained in terms of the spin-polarized densities of states.  相似文献   

16.
Based on effective-mass approximation, we present a three-dimensional study of the exciton in GaN/AlxGa1−xN vertically coupled quantum dots (QDs) by a variational approach. The strong built-in electric field due to the piezoelectricity and spontaneous polarization is considered. The relationship between exciton states and structural parameters of wurtzite GaN/AlxGa1−xN coupled QDs is studied in detail. Our numerical results show that the strong built-in electric field in the GaN/AlxGa1−xN strained coupled QDs leads to a marked reduction of the effective band gap of GaN QDs. The exciton binding energy, the QD transition energy and the electron-hole recombination rate are reduced if barrier thickness LAlGaN is increased. The sizes of QDs have a significant influence on the exciton state and interband optical transitions in coupled QDs.  相似文献   

17.
The properties of the grain boundaries (GBs) are of significant importance in high-Tc cuprates. Most large scale applications of cuprate superconductors involve usage of sintered compounds. The critical current density and the ability to trap high magnetic flux inside the sample depend largely on the quality of the GBs. Zn has the ability to pin vortices but it also degrades superconductivity. In this study we have investigated the effect of Zn impurity on the intergrain coupling properties in high-quality La2−xSrxCu1−yZnyO4 sintered samples with different hole concentrations, p (≡x), over a wide range of Zn contents (y) using field-dependent AC susceptibility (ACS) measurements. The ACS results enabled us to determine the superconducting transition temperature Tc, and the temperature Tgcp, at which the randomly oriented superconducting grains become coupled as a function of hole and disorder contents. We have analyzed the behavior of the GBs from the systematic evolution of the values of Tgcp(py), Tc(py), and from the contribution to the field-dependent ACS signal coming from the intergrain shielding current. Zn suppresses both Tc and Tgcp in a similar fashion. The hole content and the carrier localization due to Zn substitution seem to have significant effect on the coupling properties of the GBs. We have discussed the possible implications of these findings in detail in this article.  相似文献   

18.
We have performed first-principles calculations using full potential linearized augmented plane wave (FP-LAPW) method within density functional theory (DFT) to investigate the fundamental properties of CuxAg1−xI alloys. We used both GGA96 [J.P. Perdew, K. Burke, M. Ernzerhof, Phys. Rev. Lett. 77 (1996) 3865.] and EVGGA [E. Engel, S.H. Vosko, Phys. Rev. B. 47 (1993) 13164.] generalized gradient approximations of the exchange-correlation energy that are based on the optimization of total energy and corresponding potential. Quantities such as lattice constants, bulk modulus, band gap, density of occupied states and effective mass were calculated as a function of copper molar fraction x. These parameters were found to depend non-linearly on alloy composition x, except the lattice parameter, which follows Vegard's law. The microscopic origins of the gap bowing were explained using the approach of Zunger and co-workers; we have concluded that the band-gap energy bowing was mainly caused by the chemical charge-transfer effect and the volume deformation , while the structural relaxation contribute to the gap bowing parameter at smaller magnitude. The calculated phase diagram shows a broad miscibility gap for this alloy with a high critical temperature.  相似文献   

19.
EuCo2(Si1−xGex)2, x=0, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9, 1 samples were synthesised by induction melting followed by annealing at 900 °C and rapid quenching. X-ray powder diffraction and Auger electron spectroscopy studies revealed that solid solutions are formed only for x?0.2 and x?0.7. Magnetic susceptibility investigations for the solid solutions revealed a dominant divalent europium valence state in the germanium-rich samples and a dominant trivalent europium component in the silicon-rich samples. In the germanium-rich samples, a long-range antiferromagnetic ordering was observed. In all samples studied, additional magnetic transitions at various temperatures were detected, which could be attributed to small clusters containing different europium chemical surrounding from that in the predominant phase.  相似文献   

20.
Electronic and optical properties of CuGaS2: First-principles calculations   总被引:1,自引:0,他引:1  
Electronic structure and optical properties of CuGaS2 are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. The electronic structures indicate that CuGaS2 is a semiconductor with a direct bandgap of 0.81802 eV. Furthermore, other experiments and theory also show that this material has a direct bandgap. It is noted that there is quite strong hybridization between Ga 3d and S 3s orbitals, which belongs to the (GaS2). The complex dielectric functions are calculated, which are in good agreement with the available experimental results.  相似文献   

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