Mn掺杂ZnS(110)表面的电子结构和磁性

采用基于密度泛函理论的第-性原理方法,研究Mn掺杂ZnS(110)表面的电子结构和磁性.计算分析不同掺杂组态的几何参数、形成能、磁矩、电子态密度以及电荷密度.结果表明:单个Mn原子掺杂,替位于表面第二层的Zn原子时体系形成能最低,说明该层是最稳定的掺杂位置.对于两个Mn原子的掺杂,当Mn与Mn之间呈反铁磁耦合时体系最稳定.体系的总磁矩和自由Mn原子的磁矩差别很小,但是Mn原子的局域磁矩却依赖于Mn原子的3d态和近邻S原子的3p态的杂化作用,即受周围S原子环境的变化影响较大.此外,分析电荷密度图得出Mn原子替换Zn原子后与S原子形成了更强的共价键.     

Cr掺杂ZnS纳米管结构和磁性质

采用第一性原理密度泛函理论系统研究Cr原子单掺杂和双掺杂单壁ZnS纳米管的结构和磁性质.研究发现掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是放热的.单掺杂纳米管的总磁矩主要来自Cr原子3d态的贡献.结果表明Cr原子掺杂单壁ZnS纳米管趋向于铁磁态.但铁磁态和反铁磁态的能量差仅为0.036 eV.为获得室温铁磁性,我们用一个C原子替代掺杂体系中的一个S原子.计算发现铁磁态的能量比反铁磁态低0.497eV.表明此掺杂体系可能获得室温铁磁性.     

Mn/C共掺杂ZnS纳米管磁性质研究

采用第一性原理密度泛函理论系统地研究Mn原子单掺杂和双掺杂ZnS纳米管的结构、电子性质和磁性质.掺杂纳米管的形成能比纯纳米管形成能更低,表明掺杂是个放热过程.掺杂纳米管的能隙远小于纯纳米管能隙.计算结果表明Mn掺杂纳米管趋于反铁磁态.为了获得室温铁磁性,用一个C原子替代一个S原子.发现铁磁态能量比反铁磁态能量低0.454 eV.如此大的能量差表明这类材料中有可能获得室温铁磁性.     

Fe掺杂单壁ZnS纳米管磁性质

采用第一性原理密度泛函理论系统研究Fe原子掺杂单壁ZnS纳米管的结构和磁性质.首先比较掺杂纳米管的稳定性.结果表明,掺杂纳米管的形成能比纯纳米管的形成能低,说明掺杂过程是一个放热反应.单掺杂纳米管的总磁矩等于掺杂的磁性原子的磁矩,主要来自Fe原子3d态的贡献.Fe原子掺杂单壁ZnS纳米管趋向于反铁磁态.为了得到稳定的铁磁态,用一个C原子替代掺杂体系中的一个S原子.计算发现铁磁态的能量比亚铁磁态低0.164 eV的.在铁磁态和反铁磁态之间存在的巨大的能量差,表明此掺杂体系可能获得室温铁磁性.     

Mn/C共掺杂ZnS纳米管磁性质研究（英文）

采用第一性原理密度泛函理论系统地研究Mn原子单掺杂和双掺杂ZnS纳米管的结构、电子性质和磁性质.掺杂纳米管的形成能比纯纳米管形成能更低,表明掺杂是个放热过程.掺杂纳米管的能隙远小于纯纳米管能隙.计算结果表明Mn掺杂纳米管趋于反铁磁态.为了获得室温铁磁性,用一个C原子替代一个S原子.发现铁磁态能量比反铁磁态能量低0.454 e V.如此大的能量差表明这类材料中有可能获得室温铁磁性.     

钒掺杂硫化锌团簇稳定性和磁性质研究

本文采用密度泛函理论研究了V原子单掺杂和双掺杂(ZnS)12团簇的几何结构和能量稳定性.我们考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构.团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和S原子上也产生少量自旋.结果显示V原子间的磁性耦合是短程相互作用.相邻V原子之间的磁性耦合由直接的V-V反铁磁耦合和两个V和S原子之间通过p-d杂化产生的铁磁耦合这两中相互作用的竞争来决定.     

Cr掺杂ZnO纳米线电子性质和磁性质

本文采用第一性原理密度泛函理论系统的研究了Cr原子单掺杂和双掺杂两种尺寸ZnO纳米线的电子性质和磁性质.所有掺杂纳米线的形成能都比纯纳米线的形成能低,表明掺杂增强了纳米线的稳定性.研究发现Cr原子趋于替代纳米线表面的Zn原子.所有掺杂纳米线都显示了金属性.纳米线的总磁矩主要来源于Cr原子3d轨道的贡献.由于杂化,相邻的O原子和Zn原子也产生了少量自旋.在超原胞内,Cr和O原子磁矩反平行排列,表明它们之间是反铁磁耦合.表面双掺杂纳米线铁磁态能量比反铁磁态能量低149 meV,表明Cr掺杂ZnO纳米线可能获得室温铁磁性.     

钒掺杂硫化锌团簇稳定性和磁性质研究

本文采用密度泛函理论研究了V原子单掺杂和双掺杂(ZnS)12团簇的几何结构和能量稳定性。我们考虑了三种掺杂方式：替代掺杂,外掺杂和内掺杂。单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构。团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和S原子上也产生少量自旋。结果显示V原子间的磁性耦合是短程相互作用。相邻V原子之间的磁性耦合由直接的V-V反铁磁耦合和两个V和S原子之间通过p-d杂化产生的铁磁耦合这两中相互作用的竞争来决定。     

F原子吸附TiO_2:Mn(001)稀磁半导体薄膜电子结构和磁性的第一性原理计算

利用第一性原理方法计算Mn离子掺杂纯净TiO2(001)和F原子吸附的TiO2(001)薄膜的形成能、态密度和磁矩.F原子吸附明显降低TiO2∶Mn薄膜体系的形成能.F原子的吸附导致Mn离子的磁矩减小,而表面O原子的磁矩增大.表面O原子的磁矩主要来源于O原子p x和p y轨道的自旋极化,研究表明表面吸附F原子更有利于Mn离子的掺杂,在一定程度上有利于获得结构稳定的铁磁态半金属特性的TiO2∶Mn薄膜.     

Mn掺杂的ZnS(001)表面的电子态特性

利用第一性原理计算Mn在ZnS(001)表面上几种掺杂位置的形成能、局域分波态密度和磁矩.对Mn在ZnS(001)表面上的三种位置的形成能进行比较,得到两种填隙位置是非常稳定的掺杂位置.分析ZnS(001):Mn各种再构表面的电子态密度和电荷密度分布.结果表明,三种表面模型中,自旋向上的Mn原子的3d态和近邻S原子的3p态都有一定的杂化,并且替代掺杂的Mn和邻近S原子的p-d杂化最明显,形成的共价键最强.而自旋向下的Mn原子的3d态比较局域,受S原子的3p态影响较小.计算了三种掺杂表面的磁矩,并分析计算结果.     

Doping level and environment dependence of structural stability and magnetic properties in Mn-doped WS2 bilayer in first principles

We carried out first-principles electronic structure calculation to study the structural stability and magnetic properties of Mn-doped WS₂ ultra-thin films within the density functional theory. Adopting various configurations of Mn doping into WS₂ bilayer, we find that the magnetic phase can be manipulated among the ferromagnetic, antiferromagnetic, or ferrimagnetic phases by altering doping level and growth environment. Magnetic phase and strength are determined by magnetic coupling of Mn dopants 3d electrons which can be attributed crucially to the exchange interaction mediated by neighboring S atoms 3p electrons. Accompanying to the magnetic phase transition, the electronic structure reveals that transport properties switch from semiconducting with various bandgap to half-metallic states. This result implicates possible way to develop magnetic semiconductors based on Mn doped 2D WS₂ ultra-thin films for spintronics applications.     

F掺杂SnO2电子结构的模拟计算

采用基于密度泛函理论的平面波赝势方法对SnO₂:F体系的电子结构进行了第一性原理模拟计算.用广义梯度近似方法优化SnO₂:F体系的晶胞结构，计算了体系基态总能.通过确定F掺杂对O的优先替代位置，计算了SnO₂:F的能带结构、态密度、分波态密度.分析了F掺杂对SnO₂晶体的电子结构和晶体性质及光学吸收边的影响，从理论上得出光学吸收边发生蓝移.对不同掺杂量的体系电子结构进行了分析. 关键词： F掺杂 2')" href="#">SnO₂ 电子结构 态密度     

First-principles study of ferromagnetism in Zn- and Cd-doped SnO2

The electronic structures and magnetic properties of Zn- and Cd-doped SnO₂ are investigated using first-principles calculations within the generalized gradient approximation (GGA) and GGA+U scheme. The substitutional Zn and Cd atoms introduce holes in the 2p orbitals of the O atoms and the introduced holes are mostly confined to the minority-spin states. The magnetic moment induced by doping mainly comes from the 2p orbitals of the O atoms, among which the moment of the first neighboring O atoms around the dopant are the biggest. The U correction for the anion-2p states obviously increases the moment of the first neighboring O atoms and transforms the ground states of the doped SnO₂ from half-metallic to insulating. The magnetic coupling between the moments induced by two dopants is ferromagnetic and the origin of ferromagnetic coupling can be attributed to the p–d hybridization interaction involving holes.     

内掺过渡金属非典型富勒烯M@C22(M=Sc, Ti, V, Cr, Mn, Fe, Co, Ni) 几何结构、电子结构、稳定性和磁性的密度泛函研究

采用密度泛函理论中广义梯度近似对非典型富勒烯C₂₂和过渡金属内掺衍生物M@C₂₂(M=Sc,Ti,V,Cr,Mn,Fe,Co和Ni)的几何结构和电子结构进行计算研究.发现非典型富勒烯C₂₂的基态结构是含有一个四碳环的单重态笼状结构.过渡金属原子的掺入明显提高了体系的稳定性. C-M键既有一定共价性又有一定离子性.磁性、能级图、轨道分布和态密度图分析表明: M原子的3d轨道和碳笼的C原子的原子轨道之间存在较强的轨道杂化. Ti, Cr, Fe和Ni内掺的结构出现磁性完全猝灭现象. Sc和碳笼间是弱反铁磁作用, V,Mn和Co与碳笼间是弱铁磁作用.     

DFT study on electronic structure and optical properties of N-doped,S-doped,and N/S co-doped SrTiO3

The electronic structures and optical properties of N-doped, S-doped and N/S co-doped SrTiO₃ have been investigated on the basis of density functional theory (DFT) calculations. Through band structure calculation, the top of the valence band is made up of the O 2p states for the pure SrTiO₃. When N and S atoms were introduced into SrTiO₃ lattice at O site, the electronic structure analysis shows that the doping of N and S atoms could substantially lower the band gap of SrTiO₃ by the presence of an impurity state of N 2p on the upper edge of the valence band and S 2p states hybrid with O 2p states, respectively. When the N/S co-doped, the energy gap has further narrowing compared with only N or S doped SrTiO₃. The calculations of optical properties also indicate a high photo response for visible light for N/S co-doped SrTiO₃. Besides, we find a new impurity state which separates from the O 2p states could improve the photocatalytic efficiency and we also propose a model for light electron-hole transportation which can explain the experiment results well. All these conclusions are in agreement with the recent experimental results.     

Structural and magnetic properties of MoS2 monolayer zigzag nanoribbon doped by Ti,V, Cr,and Mn

In order to find new functions of monolayer MoS₂ in nanoelectronics or spin electronic devices, using spin-polarized density functional theory (DFT) calculations with on-site coulomb interaction (U), we investigated substitutional doping of Mo atoms of monolayer zigzag MoS₂ nanoribbon (ZZ-MoS₂ NR) by transition metals (TM) (where TM = Ti, V, Cr, Mn) at the Mo-edge, S-edge, and the middle of the NRs. The results of this study indicate the NR widened irrespective of the doped TM position and type, and the Mo-edge was found as the easiest substitutional position. For ZZ-MoS₂ NR doped by Mn, Cr or V atoms, the preferred magnetic coupling state is the edge atoms of S at the S-edge, exhibiting the same spin polarization with TM (named the FM1 state), attributing the NR with metallic magnetism. For Ti-doped monolayer ZZ-MoS₂ NR, in addition to the FM1 state, other preferred magnetic coupling state was observed in which the edge atoms of S at the S-edge exhibit the opposite spin polarization with that of Ti (named the FM2 state). Thus, the NR doped by Ti atom possesses metallic (FM1 state) or half-metallic (FM2 state) magnetism. The total magnetic moments of the ZZ-MoS₂ NR doped by TM follows a linear relationship as a function of the TM dopants (Mn, Cr, V, and Ti). Under $>4\text{\%}$ applied strain, the NR doped by Ti atom only presents the characteristics of half-metallic magnetism as the initial one in the FM2 state, and its total magnetic moment always remained 0 μB, i.e., it was not affected by the width of the NR. This study provides a rational route of tuning the magnetic properties of ZZ-MoS₂ NRs for their promising applications in nanoelectronics and spin electronic devices.     

First-principle study on magnetic properties of Mn/Fe codoped ZnS

We studied the magnetic properties of Mn/Fe codoped ZnS comparatively with and without defects using first-principle calculation. The calculated results indicate that the Mn/Fe codoped ZnS system tends to stabilize in a ferrimagnetic (FiM) configuration. To obtain a ferromagnetic (FM) configuration, we consider the doped system with defects, such as S or Zn vacancy. The calculated results indicate that the doped system with Zn vacancy favors FiM states. Although the FM states of the doped system with S vacancy are more stable than the FiM states in negative charge states, the FM states are not stable enough to exist. Finally, we replaced an S atom by a C atom in the doped system. The C atom prefers to substitute the S atom connecting Mn and Fe atoms. The formation energy of this defect is −0.40 eV, showing that Mn/Fe/C codoped ZnS can be fabricated easily by experiments. Furthermore, the FM state was lower in energy than the FiM state by 114 meV. Such a large energy difference between the FM and FiM states implies that room temperature ferromagnetism could be expected in such a system.     

First-principles study on electronic,magnetic properties and optical absorption of vanadium doped rutile TiO2

The electronic, magnetic properties and optical absorption of vanadium (V) doped rutile TiO₂ have been studied by the generalized gradient approximation GGA and GGA+U (Hubbard coefficient) approach respectively. On the one hand, we consider the influence of vanadium with different doping concentration on the electronic structure. On the other hand, we study double V atoms doped TiO₂, mainly study four V-doped TiO₂ configurations, and find the magnetic ground states are ferromagnetic state. For the TiO₂@V-V1, TiO₂@V-V3 and TiO₂@V-V4 configurations without O ion as bridge between V-V atoms, there will have a metastable state of antiferromagnetic configurations, while, for the TiO₂@V-V2 configurations with an O ion as bridge between V-V atoms, due to the existence of superexchange between V-O-V, there will only exist the ground state of ferromagnetic state and there are no other metastable configurations. Furthermore, the optical properties of V-doped TiO₂ are calculated. The results show that the V-doped TiO₂ has strong infrared light absorption and visible light absorption.     

梯形化合物NaV2O4F电子结构的第一性原理研究

采用基于密度泛函理论(DFT)的第一性原理赝势平面波方法, 通过自旋极化的广义梯度近似(GGA)电子结构计算对梯形化合物NaV₂O₄F进行了研究. 考虑了四种假想的自旋有序态,计算结果表明该化合物的磁基态具有二维反铁磁(AFM)结构, 即沿梯阶和梯腿方向都表现为AFM作用. 能带结构显示NaV₂O₄F为绝缘体材料, 带隙约为1.0eV. 方锥体中的晶体场劈裂使得VO₄F方锥体中的 V^{4+ 关键词： 2O₄F')" href="#">NaV₂O₄F 梯形化合物 第一性原理计算 电子结构}