Ag(100)表面α-6T分子的自组装和STM诱导发光

利用扫描隧道显微镜诱导发光技术, 对有机分子α-6T在Ag(100)表面的自组装和光子发射特性进行了研究. 发现在极低的覆盖率下,α-6T分子以四个分子形成一种独特的风车形状的异构体. 随着覆盖率的增加,α-6T分子倾向于肩并肩紧密排列形成条纹状结构. 进一步增加覆盖率时,分子以低层分子的条纹结构作为模板,一层一层往上生长. 在五层分子厚度的样品上,利用光致方法可以获得分子荧光,这说明顶层分子已经被有效脱耦合. 然而在同样的样品上,STM诱导发光光谱却只展现出类似等离激元的发射特性. 在这种情况下,分子荧     

单个等离激元纳米颗粒和纳米间隙结构与量子发光体的强耦合

在腔量子电动力学中,如果量子发光体与腔模式的耦合强度超过二者的平均损耗,就进入了强耦合区域,此时会形成部分光部分物质的新量子态—极化激元态.强耦合在室温玻色-爱因斯坦凝聚、极化激元激光、单光子非线性、量子信息等领域有重要的应用价值.基于单个金属纳米颗粒的结构可以支持局域表面等离激元共振,拥有极小的模式体积,非常有利于强耦合现象的发生.本文主要介绍了强耦合的理论背景、单个金属纳米颗粒和纳米间隙结构与量子发光体的强耦合、以及强耦合的动态调控,并展望了该领域的研究前景.     

Ag(111)和Au(111)上铋的初始生长行为

半金属铋(Bi)的表面合金具有的Rashba效应,和其具体结构性质有重要关联.本文结合扫描隧道显微镜(STM)和密度泛函理论(DFT),系统地研究了Bi原子在Ag(111)和Au(111)上的不同初始生长行为.在室温Ag(111)上,连续的Ag2Bi合金薄膜会优先在Ag台阶边缘形成;在570 K Ag(111)上,随着...     

表面等离激元金属‐绝缘体‐半导体波导激光器研究进展

纳米激光器在光通信、全息技术、生物医疗成像等领域有着广泛的应用前景。表面等离激元（Surfaceplasmonpolariton,SPP）沿着金属表面传播,基于该特性可制成突破衍射极限的低阈值纳米激光器。它们不但具有小尺寸特征,同时还能激发Purcell效应,表现出更高的自发辐射效率。近年来,金属‐绝缘体‐半导体（MIS）波导结构的SPP激光器因具有超强的模式约束能力被大量报道。本文以基于MIS结构的SPP激光器为主题进行综述。首先,介绍了SPP激光器的工作原理,接着分别介绍了基于MIS波导结构的纳米片型和纳米线型SPP激光器的工作原理。然后,依据增益介质材料的不同,依次介绍了增益介质分别为Ⅱ‐Ⅵ半导体、Ⅲ‐Ⅴ半导体以及钙钛矿的SPPMIS波导激光器研究进展。最后,总结全文,并对基于MIS波导的SPP激光器未来的发展和挑战进行了展望。     

金属纳米颗粒双圆环阵列的表面格点共振效应

由金属纳米粒子构成的周期性规则阵列,可以通过粒子间的耦合来激发表面格点共振效应,从而极大压缩单粒子的局域表面等离子体共振效应的线宽.本文将该表面格点共振效应从二维周期性结构推广到轴对称的圆环结构中,提出了双圆环金属纳米粒子阵列结构的电磁响应模型.在此基础上,得到了双圆环阵列发生表面格点共振效应的条件,并发现当阵列结构参数满足特定条件时,该阵列的所有偶极子分量会发生集体共振效应,从而获得极高的近场增强因子.     

极化激元(polaritons)与拉曼散射

在给出介质中的光 (电磁 )波与极化波混合作用而得出的极化激元方程、极化激元色散方程之后又讨论了相应的物理意义及相关的物理问题 ;获得极化激元的实验方法 ,接着还介绍和讨论了极化激元的拉曼散射。     

截面形状对快电子激发纳米双线表面等离激元的影响

采用边界元方法研究了快电子在金属纳米双线中激发间隙表面等离激元(SPP)的性质,比较了在不同横截面形状(包括圆形、尖劈形和不规则形状)下电子所激发SPP的不同.研究表明:在以上波导结构中,快电子都能激发具有较长传播距离和较好局域性的低阶单级-单级耦合的间隙等离激元模式;同时通过对波导无量纲价值参数的比较,发现快电子在纳米双线中激发间隙等离激元对双线波导的横截面形状要求不高,横截面形状真正影响的是高阶等离激元模式的激发,而且快电子在截面形状为尖劈的双线波导中能激发局域性更强的间隙SPP.该研究将对实验中利用关键词：表面等离激元间隙模式金属纳米波导     

金属纳米圆盘等离激元共振的阴极荧光表征

阴极荧光是材料在受到电子束激发时产生的光学信号,具有微区激发和超高空间分辨的特点.本文首先介绍了阴极荧光的物理机理,描述了传统的实验探测手段和实验装置,随后利用阴极荧光光谱技术研究了金纳米圆盘在电子束激发下的局域表面等离激元共振模式,并结合数值模拟说明了本征电磁模式随着圆盘半径的演化以及对发光偏振特性的影响.     

Au(111)表面吸附单个八乙基钴卟啉分子的电子态和输运性质调控

通过低温超高真空扫描隧道显微镜及其谱学方法研究并展示了分子配体在调控表面吸附的单个八乙基钴卟啉(CoOEP)分子的电子态和输运性质中的重要作用. 通过单分子剪裁可以脱去该分子外围的甲基, 并在中心钴原子的微分电导谱中观察测到d轨道共振到近藤共振的演变. 实验结果结合第一性原理的理论计算研究表明, 在脱去甲基前后中心钴原子的化学环境和磁矩均未发生显著变化, 这一演变可以通过一个简化模型来阐释并被归结为脱去甲基后分子配体与衬底成键改变了体系隧穿参数所导致. 此外, 实验结果表明CoOEP分子配体的输运性质可受到分子间距离和范德华相互作用的显著调控. 在CoOEP低聚体中位于分子之间的乙基被抬高, 同时在其微分电导谱谱中0–0.8 V区域内新出现一个强的共振峰. 这一新的共振峰表现出等间距的多峰细节, 其峰间距与卟啉环和乙基之间的C–C键伸缩模式能量符合. 这一新共振峰的出现被归结为由于分子局部与衬底耦合减弱形成双结隧穿体系所导致的振子态隧穿峰.     

金属纳米球-纳米圆盘结构中表面等离激元共振模式的电磁场增强研究

表面等离激元自诞生以来已有一百多年的历史,并逐渐形成了一门新的学科——表面等离激元光子学.位于金属纳米结构中的局域表面等离激元可产生非常显著的近表面电场增强,并成功应用于诸多研究领域当中,而对局域表面等离激元与外界入射光中磁场的相互作用的研究则相对较少.该研究在前期已有的研究基础之上模拟计算了金属纳米球-纳米圆盘结构间...     

Effect of substrate doping concentration on quantum well states of Pb island grown on Si(1 1 1)

The interaction between the metallic film/island and the semiconductor substrate is important to the electronic properties of metallic nanostructure grown on semiconductor substrate. Here, we report a series of comparison experiments to investigate the effect of doping concentration of Si substrates on the quantum well state (QWS). Using scanning tunneling microscopy, we observed that the apparent QWS energy positions show a strong dependence on the substrate used and on the sample temperature. Further experimental results by varying the height of scanning tunneling microscope tip over the Pb island uncovered that the observed apparent QWS energy position changes mainly come from the partial bias voltage drop on the combined resistance of the Pb wetting layer and the substrate, which is comparable with the vacuum tunneling resistance at low temperatures.     

Chemical reactions of water molecules on Ru(0 0 0 1) induced by selective excitation of vibrational modes

Tunneling electrons in a scanning tunneling microscope were used to excite specific vibrational quantum states of adsorbed water and hydroxyl molecules on a Ru(0 0 0 1) surface. The excited molecules relaxed by transfer of energy to lower energy modes, resulting in diffusion, dissociation, desorption, and surface-tip transfer processes. Diffusion of H₂O molecules could be induced by excitation of the O-H stretch vibration mode at 445 meV. Isolated molecules required excitation of one single quantum while molecules bonded to a C atom required at least two quanta. Dissociation of single H₂O molecules into H and OH required electron energies of 1 eV or higher while dissociation of OH required at least 2 eV electrons. In contrast, water molecules forming part of a cluster could be dissociated with electron energies of 0.5 eV.     

A prospective: Quantitative scanning tunneling spectroscopy of semiconductor surfaces

Analysis methods that enable quantitative energies of states to be obtained from vacuum tunneling spectra of semiconductors are discussed. The analysis deals with the problem of tip-induced band bending in the semiconductor, which distorts the voltage-scale of the spectra so that it does not correspond directly to energy values. Three-dimensional electrostatic modeling is used to solve the electrostatics of the tip-vacuum-semiconductor system, and an approximate (semiclassical in the radial direction) solution for the wavefunctions is used to obtain the tunnel current. Various applications of the method to semiconductor surfaces and other material systems are discussed, and possible extensions of the method are considered.     

Donor and acceptor-like electronic states in a one-dimensional semiconductor

Donor and acceptor-like electronic states were observed near the conduction and valence band, respectively, in a semiconducting single-wall carbon nanotube using scanning tunneling microscopy and spectroscopy. They are observed to be, spatially, at the same location and spread within a few nm. Their physical origin is suggested as locally formed excessive and deficient number of electrons per a closed carbon network.     

Initial stages of praseodymium growth on Si(111): morphology and electronic structure

An STM study of the Pr---Si(111)-(7 × 7) interface reveals a much more heterogeneous growth morphology than is suggested by diffraction techniques and spectroscopies which average over the surface. Deposition of 1 ML followed by annealing at 650°C gives the most orderly growth, but this falls short of 2D epitaxy. At high temperatures (> 1000°C), the small amount of rare earth remaining on the surface stabilises some novel Si(111) surface reconstructions.     

Scanning tunnelling microscopy studies of growth morphology in highly epitaxial c-axis oriented Pt thin film on (0 0 1) SrTiO3

A noble metal Pt thin film was successfully grown on (0 0 1) SrTiO₃ substrate by using a DC-sputtering technique. The surface morphology and growth features of the as-grown Pt films were investigated by scanning tunnelling microscopy. Growth conditions, such as pre-sputtering, deposition ambience, and oxygen ratio are found to greatly affect the orientation, the crystallinity, and the epitaxial behavior of Pt films on (0 0 1) SrTiO₃. Single-crystalline Pt films have been achieved by introducing a few percentage oxygen into the sputtering ambient. The in-plane-relationship of the c-axis oriented Pt thin films on (0 0 1) SrTiO₃ was determined to be (0 0 1)_Pt∥(0 0 1)_SrTiO3 and [0 0 1]_Pt∥[0 0 1]_SrTiO3. Oxygen in the sputtering ambient was found to be a key factor to achieve the epitaxial Pt films.     

Au(111)表面钴酞菁分子自旋激发态的π电子辅助自旋弛豫

We present our investigation on the spin relaxation of cobalt phthalocyanine (CoPc) films on Au(111) (CoPc/Au(111)) surface using scanning tunneling microscopy and spectroscopy. The spin relaxation time derived from the linewidth of spin-flip inelastic electron tunneling spectroscopy is quantitatively analyzed according to the Korringa-like formula. We find that although this regime of the spin relaxation time calculation by just considering the exchange interaction between itinerant conduction electrons and localized d-shells (s-d exchange interaction) can successfully reproduce the experimental value of the adsorbed magnetic atom, it fails in our case of CoPc/Au(111). Instead, we can obtain the relaxation time that is in good agreement with the experimental result by considering the fact that the π electrons in CoPc molecules are spin polarized, where the spin polarized π electrons extended at the Pc macrocycle may also scatter the conduction electrons in addition to the localized d spins. Our analyses indicate that the scattering by the π electrons provides an efficient spin relaxation channel in addition to the s-d interaction and thus leads to much short relaxation time in such a kind of molecular system on a metal substrate.     

STM/STS observation of ferrocene derivative adduct to C60 on HOPG

The C₆₀ONCFn cycloadduct (Fn=ferrocene) was prepared in the reaction between C₆₀ and ferrocene oxime, the ferrocene derivative was bound to C₆₀ at the 6–6 bond by a heterocyclic oxygen–nitrogen–carbon ring; the compound was stable in air. The compound dissolved in dichloroethane was deposited on HOPG and observed by UHV STM/STS methods. The molecules of C₆₀ONCFn formed several-microns-long straight chains with clearly visible adducted groups pointing to one side of the chain. The STM/STS observations are discussed within the terms of semiempirical quantum chemical molecular modeling.     

STM/STS characterization of platinum silicide nanostructures grown on a Pt(1 1 1) surface

Formation of the platinum silicides nanostructures and their electronic properties have been studied using scanning tunneling microscopy and scanning tunneling spectroscopy. The investigated structures have been grown by solid state epitaxy upon deposition of the Si atoms (coverage about 0.2 ML) and sequential annealing at temperature range 600-1170 K. The formation of the Pt₂Si and PtSi islands was investigated until the Si atoms embedded into the Pt substrate at the 1170 K. The images of the silicides structures and Pt substrates with atomic resolution have been recorded. The evolution of the spectroscopic curves both for substrates and nanostructures, corresponding to the structural and sizes changes, have been shown.