氧气氛中p-GaN/Ni/Au电极在相同温度不同合金时间下的欧姆接触形成机制和扩散行为

用卢瑟福背散射/沟道技术研究了p-GaN上的Ni/Au电极在氧气氛下相同合金温度(500℃)不同合金时间后的微结构演化,以揭示欧姆接触的形成机制.利用背散射随机谱和RUMP模拟程序研究了电极金属之间的互扩散,用沟道谱探测了电极金属中的氧分布.结合不同合金时间下比接触电阻ρ_c的变化,发现随着合金时间的延长比接触电阻持续降低,在合金时间60 s后降低的速度减慢, Au扩散到GaN的表面,在p-GaN上形成外延结构,O向电极内部扩散反应生成NiO对降低ρ关键词：GaN卢瑟福背散射/沟道欧姆接触     

用卢瑟福背散射/沟道技术研究ZnO/Zn0.9 Mg0.1 O/ZnO异质结的弹性应变

利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn0.9Mg0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn0.9Mg0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn0.9Mg0.1O与ZnO的晶格常数差异及弹性应变的逐渐释放所致.     

有机源载气对MOCVD生长InGaN薄膜的影响研究

采用MOCVD技术以Al₂O₃为衬底在GaN膜上生长了In_xGa_1-xN薄膜。以卢瑟福背散射/沟道技术和光致发光技术对In_xGa_1-xN/GaN/Al₂O₃样品进行了测试。获得了合金层的组分、厚度、结晶品质及发光性能等信息。研究表明:在以N₂作主载气的情况下,有机源的载气对In_xGa_1-xN膜的In组分和生长速率影响很大。生长温度为760℃时,以70ml/min的N₂作有机源载气得到的In_xGa_1-xN膜的In组分为0.10,生长速率为60nm/min;而以70ml/min的H_x作有机源载气得到的In_xGa_1-xN薄膜的In组分为0.06,生长速率为10.6nm/min。本文首次报导了载气中含有少量H_x能增大In_xGa_1-xN薄膜的生长速率的现象。     

用卢瑟福背散射/沟道技术研究ZnO/Zn0.9Mg0.1O/ZnO异质结的弹性应变

利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn_0.9Mg_0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn_0.9Mg_0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn_0.9Mg_0.1O与ZnO的晶格常数差异及弹性应变的关键词：异质结卢瑟福背散射/沟道弹性应变ZnMgO     

用卢瑟福背散射/沟道技术及高分辨X射线衍射技术分析不同Al和In含量的AlInGaN薄膜的应变

利用卢瑟福背散射/沟道技术对在蓝宝石衬底上用金属有机化学气相沉积方法生长的有GaN缓冲层(>2μm)的一系列不同Al和In含量的AlInGaN薄膜进行组分及结晶品质的测量;并结合高分辨X射线衍射技术,通过对AlInGaN的对称(0002)面,及非对称(1015)面的θ—2θ扫描及倒空间扫描,可以精确测定AlInGaN外延层的晶格常数及水平和垂直方向的应变.实验结果表明AlInGaN 薄膜中不同含量Al和In对其应变有较大的影响,结合Vegard定理,对这一现象给出了理论的解释.关键词：AlInGaN高分辨X射线衍射卢瑟福背散射/沟道弹性应变     

Si(111)衬底上生长有多缓冲层的六方GaN晶格常数计算和应变分析

利用卢瑟福背散射/沟道技术和高分辨率X射线衍射技术对在Si(111)衬底上利用金属有机化合物气相外延技术(MOVPE)生长有多缓冲层的六方GaN外延膜进行结晶品质计算、晶格常数计算和应变分析. 实验结果表明：GaN外延膜的结晶品质为χ_min=1.54%,已达到完美晶体的结晶品质(χ_min=1%—2%);GaN外延膜的水平方向和垂直方向晶格常数分别为：a_epi＝0.31903nm,c_epi=0.51837nm,基本达到G关键词：GaN高分辨X射线衍射卢瑟福背散射/沟道弹性应变     

快重离子辐照引起Ni/SiO2界面原子混合及相变研究

在室温下用308 MeV的Xe离子和853 MeV的Pb离子辐照Ni/SiO2样品, 用卢瑟福背散射和X射线衍射技术对样品进行了分析。 通过分析Ni/SiO2样品中元素成分分布和结构随离子辐照剂量和电子能损的变化, 探索了离子辐照在Ni/SiO2样品中引起的界面原子混合与结构相变现象。 实验结果显示, Xe和Pb离子辐照均能引起明显的Ni原子向SiO2基体的扩散并导致界面附近Ni, Si和O原子的混合。 实验观测到低剂量Xe离子辐照可产生NiSi2相, 而高剂量Xe离子辐照则导致了Ni3Si和NiO相的形成。 根据热峰模型, Ni原子的扩散和新相的形成可能由沿离子入射路径强电子激发引起的瞬间热峰过程驱动。Ni/SiO2 interface were irradiated at room temperature with 308 MeV Xe ions to 1×1012, 5×1012 Xe/cm2 and 853 MeV Pb ions to 5×1011 Pb/cm2, respectively. These samples were analyzed using Rutherford Backscattering Spectrometry (RBS) and X ray diffraction spectroscopy (XRD), from which the intermixing and phase change were investigated. The obtained results show that both Xe and Pb ions could induce diffusion of Ni atoms to SiO2 substrates and result in intermixing of Ni with SiO2. Furthermore, 1.0×1012 Xe/cm2 irradiation induced the formation of NiSi2 and 5.0×1012 Xe/cm2 irradiation created Ni3Si and NiO phases. The diffusion of Ni atoms and the formation of new phase may be driven by a transient thermal spike process induced by the intense electronic energy loss along the incident ion path.     

金属有机化学汽相沉积生长InGaN薄膜的研究

以Al2O3为衬底,采用金属有机汽相沉积（MOCVD）技术在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术和光致发光技术对InxGa1-xN／GaN/Al2O3样品进行了分析,研究表明,金属有机汽相沉积生长高In组分InxGa1-xN薄膜有一最佳TMIn/TEGa摩尔流量比。在一定范围内,降低其摩尔流量比,合金的生长速率增高,In组分提高;进一步降低TMIn/TEGa摩尔流量比,导致In组分下降,研究还表明,InGan薄膜的结晶品质随In组分的增大而下降,InGan薄膜的In组分由0．04增大到0．10,其最低沟道产额比由4．1％增至11．0％。     

硅晶体中点缺陷结合过程的分子动力学研究

采用分子动力学方法模拟研究了硅晶体中的空位和间隙原子的结合过程. 研究中采用了Stilliger-Weber三体经验势描述原子间的相互作用, 系统分别在低温300K和高温1400K进行弛豫. 计算中发现空位和间隙原子倾向于通过<111>方向结合,而<110>方向上存在着势垒. 通过势垒值的计算, 对Tang和Zawadzki势垒计算值的差异进行了解释.关键词：分子动力学空位与间隙原子扩散     

InGaN/GaN多量子阱的组分确定和晶格常数计算

采用金属有机化学气相沉积(MOCVD)技术以蓝宝石为衬底在n型GaN单晶层上生长了InGaN/GaN多量子阱结构外延薄膜,利用高分辨X射线衍射(HRXRD),卢瑟福背散射/沟道(RBS/channeling),以及光致发光(PL)技术对InGaN/GaN多量子阱结构薄膜分别进行了平均晶格常数计算、In原子替位率计算和In组分的定量分析.研究表明：InGaN/GaN多量子阱的水平和垂直方向平均晶格常数分别为a_epi=0.3195nm,c_epi=0.5198nm,In原子的替位率为99.3%,利用HRXRD和RBS/channeling两种分析技术计算In的组分分别是0.023和0.026,并与样品生长时设定的预期目标相符合,验证了两种实验方法的准确性;而用室温条件下的光致发光谱(PL)来计算InGaN/GaN多量子阱中In的组分是与HRXRD和RBS/channeling的实验结果相差很大,说明用PL测试In组分的方法是不适宜的.关键词：InGaN/GaN多量子阱高分辨X射线衍射卢瑟福背散射/沟道光致发光     

Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AIN interlayer by Rutherford backscattering/channeling

An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire （0001） substrate with a thick （〉 1 μm） GaN intermediate layer. The Al composition was determined by Rutherford backscattering （RBS）. Using the channeling scan around an off-normal [1213] axis in the （1010） plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eT in the high-quality Al0.2Ga0.8N layer is dramatically released by the AIN interlayer from 0.66% to 0.27%.     

Characterization of tetragonal distortion in a thick Al_(0.2)Ga_(0.8)N epilayer with an AlN interlayer by Rutherford backscattering/channeling

An Al0.2Ga0.8N/AlN/Al0.2Ga0.8N heterostructure was grown by metalorganic chemical vapor deposition on a sapphire(0001) substrate with a thick(> 1 μm) GaN intermediate layer. The Al composition was determined by Rutherford backscattering(RBS). Using the channeling scan around an off-normal [1213] axis in the(1010) plane of the Al0.2Ga0.8N layer, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer, is investigated. The results show that eTin the high-quality Al0.2Ga0.8N layer is dramatically released by the AlN interlayer from 0.66% to 0.27%.     

Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu-ions implantation

We report on the structural and optical characterization of waveguides formed in YbVO₄ crystals by Cu²⁺-ion implantation with an energy of 3.0 MeV and doses of 3.0×10¹⁴-1.0×10¹⁵ ions/cm². The damage properties are determined by RBS/Channeling measurements with the help of simulation code RUMP. The m-line method is used to characterize the dark-mode spectroscopy in the planar waveguides. According to the reconstructed refractive index profile of the waveguide cross section, a numerical simulation is carried out to investigate the confinement of the light in the waveguides based on the beam propagation method.     

Defects mediated diffusion in Pt/Co/Pt multilayers induced by dense electronic excitations

Present study compares the effects of 200 MeV Ag¹⁵⁺ and 100 MeV O⁷⁺ ion irradiations on the structural, interfacial mixing and magnetic properties of annealed Pt/Co/Pt layers fabricated by DC magnetron sputtering. X-ray diffraction analysis shows that ion irradiations coupled with post annealing results in the formation of the face centred tetragonal L1₀ CoPt phase. Irradiation using 200 MeV Ag¹⁵⁺ ions having higher ionizing energy transfer to the film was found to be more efficient in causing structural phase transition as compared with that using 100 MeV energy O⁷⁺ ions having lower ionizing energy transfer at similar fluence. Rutherford back scattering analysis reveals the role of defect mediated inter-atomic diffusion in tailoring the alloy composition of the film irradiated by different energetic ions. A broad magnetic switching field distribution for O⁷⁺ ion irradiated films compared to Ag¹⁵⁺ ion irradiation was evident from the magnetic measurements. The contribution of alloy composition to switching field distribution has been discussed in details. Above results showed that the electronic energy loss and fluence dependent defects, generated by irradiation, played an important role in tuning the structural, atomic diffusion and magnetic reversal properties of Pt/Co/Pt.     

Mg+注入对GaN晶体辐射损伤的研究

在蓝宝石衬底上通过金属有机物化学气相沉积(metal-organic chemical vapor deposition,MOCVD)方法外延生长的GaN薄膜具有良好的结晶品质,χ_min达到2.00%. 结合卢瑟福背散射/沟道(Rutherford backscattering/channeling,RBS/C)和高分辨X射线衍射(high-resolution X-ray diffraction,HXRD)的实验测量,研究了不同剂量和不同角度Mg⁺注入GaN所造成的辐射损伤. 实验结果表明,随注入剂量的增大,晶体的辐射损伤也增大,注入剂量在1×10¹⁵atom/cm²以下,χ_min小于4.78%,1×10¹⁶atom/cm²是Mg⁺注入GaN的剂量阈值,超过这个阈值,结晶品质急剧变差,χ_min达到29.5%;随机注入比沟道注入的辐射损伤大,且在一定范围内随注入角度的增大,损伤也增大,在4×10¹⁵atom/cm²剂量下偏离〈0001〉沟道0°,4°,6°,9°时的χ_min(%)分别为6.28,8.46,10.06,10.85;经过700℃/10min+1050℃/20s两步退火和1000℃/30s高温快速退火后,晶体的辐射损伤都有一定程度的恢复,而且1000℃/30s高温快速退火的效果更好,晶体的辐射损伤可以得到更好的恢复. 关键词：GaN卢瑟福被散射/沟道高分辨X射线衍射辐射损伤     

InxGa1-xN薄膜的弯曲因子及斯托克斯移动研究

采用常压金属有机化学汽相沉积(MOCVD)技术以Al2O3为衬底在GaN膜上生长了InxGa1-xN薄膜。以卢瑟福背散射／沟道技术、光透射谱、光致发光光谱对InxGa1-xN／GaN／AI2O3样品进行了测试。研究了InxGa1-xN薄膜的弯曲因子及斯托克斯移动。结果表明，采用光透射谱、光致发光光谱得到的InxGa1-xN薄膜的禁带宽度一致，InxGa1-xN薄膜并不存在斯托克斯移动。InxGa1-xN薄膜的In组分分别为0．04，0．06，0．24，0．26时，其弯曲因子分别为3．40,2．36，1．82，3．70。随In组分变化。InxGa1-xN薄膜的弯曲因子的变化并没有一定的规律，表明InxGa1-xN薄膜的禁带宽度随In组分的变化关系复杂。