电沉积－退火工艺制备铜铟硒太阳能电池薄膜及表征

利用电沉积硒气氛下后续退火的工艺制备出了高结晶质量的铜铟硒薄膜．通过X射线衍射、扫描电子显微镜、拉曼光谱、紫外-可见-近红外光谱和阻抗谱技术对退火后的铜铟硒薄膜进行表征,结果表明530 oC硒化退火后的铜铟硒薄膜具有四方的黄铜矿晶体结构,晶粒尺寸达到微米量级,光学带隙为0.98 eV,经过KCN溶液去除表面高导电性的铜硒化合物后铜铟硒薄膜的载流子浓度在10¹⁶ cm^-3量级．利用硒化退火的铜铟硒薄膜作为光吸收层制备了结构为AZO/i-ZnO/CdS/CIS/Mo/glass的太阳能电池,在AM1.5光照条件下对其电流-电压特性测试后发现面积为0.2 cm²的电池可以达到0.96％的能量转换效率,并对限制电池效率的原因做出了初步的分析和讨论.     

一维有序ZnO纳米棒阵列的制备与表征

通过改进传统水热法的密闭、高压的条件,在非密闭、常压环境下在氧化铟锡玻璃衬底上自组装生长了取向高度一致并且分散性好的ZnO纳米棒阵列.首先将乙酸锌溶胶旋涂到氧化铟锡玻璃衬底上,经热处理得到致密的ZnO纳米晶薄膜,然后将其垂直放入前驱体溶液中通过化学溶液沉积生长得到ZnO纳米棒阵列.室温条件下,对样品进行了SEM和XRD的测试.表明生成的氧化锌纳米棒阵列沿c轴取向,实现了定向生长,且纳米棒结晶较好,为六方纤锌矿结构,直径约为40 nm,长度达到微米量级.室温下的吸收光谱表明,由此方法得到的纳米棒纯度较高,有强的紫外吸收.室温下,观测到了该有序ZnO纳米棒阵列在387 nm处强的窄带紫外发射,半高宽小于30 nm,在468 nm处还有一强度较弱的蓝光发射峰.     

ZnS纳米棒阵列的结构和光学特性

采用等离子体辅助的低压金属有机化学气相沉积（LP-MOCVD）技术,在没有引入任何金属催化剂的条件下,在c平面的蓝宝石衬底上制备出高取向的ZnS纳米棒阵列。从样品的场发射扫描电镜（SEM）和透射电镜的照片（TEM）中可以看到,获得的ZnS纳米棒具有均一的直径和长度,其直径和长度约为60,400nm;X射线衍射（XRD）和选区电子衍射（SAED）谱指出获得的ZnS纳米棒为单晶的六角结构。此外,在光致发光（PL）谱中还观测到了发光峰位于335nm强的近带边发射。     

强辐射源用铜纳米线阵列靶的结构与性能

采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

强辐射源用铜纳米线阵列靶的结构与性能

 采用多孔阳极氧化铝（AAO）模板脉冲电沉积法制备了强辐射源用铜纳米线阵列靶,并用扫描电子显微镜（SEM）、能谱（EDS）和X射线衍射（XRD）对其进行了结构表征。结果表明：去除AAO模板后铜纳米线平均直径比去除AAO模板前的平均孔径大32%,长度缩短5%。对电沉积2 000 s的样品进行铜纳米线长度分布表征,结果显示:距离模板圆心越远,铜纳米线越长。与超短脉冲激光相互作用实验结果表明:纳米线平均长度在18~50 μm范围内,铜Kα光子产额先随纳米线长度增加而增加,当长度大于33 μm时,铜Kα光子产额开始下降。     

一种可控纳米柱阵列的研制

在一次阳极氧化法制备多孔氧化铝(anodized aluminum oxide,AAO)的基础上,进行了二次、三次、四次氧化制备AAO,并对多次氧化制备多孔AAO的电流变化曲线和模板表面的形貌特点等进行了比较分析.二次、三次、四次氧化制备的AAO纳米孔孔径依次增大、孔间距减小,而模板表面的纳米孔有序性分布没有明显变化.控制一次氧化AAO模板的除膜时间,～10 min即可得到孔径规则、高度有序的AAO膜.最后,利用所制备的不同孔深和孔径的AAO为模板,通过热纳米压印复制技术制备了长度和直径等性质可控的PMMA纳米柱阵列. 关键词： 纳米柱阵列 聚甲基丙烯酸甲酯 多孔氧化铝模板 多次氧化法     

镍锰铁氧体纳米线阵列的制备与表征

采用真空负压灌注技术, 结合溶胶-凝胶法在多孔氧化铝模板的纳米孔洞中成功制备了平均直径为80 nm左右的Ni_{1- x}Mn_xFe₂O₄(x=0, 0.25, 0.5, 0.75) 纳米线阵列. XRD结果显示所制备的纳米线阵列为立方尖晶石结构, SEM和TEM的结果表明纳米线是由大量不同晶体取向的亚微晶粒联接组成. 磁测量结果显示, 随着Mn掺杂浓度的增加, 饱和磁化强度先增加而后减小, 这种变化与离子在尖晶石结构中的替代、占位变化有关. 相比于块体材料的NiFe₂O₄, 由于非线性磁结构比例的增加, 导致了线体NiFe₂O₄的饱和磁化强度降低.     

铜钴合金纳米有序阵列的光学特性

用电化学法制备了高度有序的多孔阳极氧化铝模板, 选用CoSO4和CuSO4的混合溶液为电解液,用交流电化学沉积法在多孔阳极氧化铝的柱形微孔内制备铜钴合金纳米线有序阵列.分别用扫描电镜(SEM),X 射线衍射仪(XRD)对多孔氧化铝模板和纳米线阵列的微观形貌和结构进行分析.结果显示,制备的合金纳米线表面光滑、均匀,纳米线中的晶粒在长过程中有(111) 晶面的择优取向.用UV3101分光光度计测试了铜钴合金多孔铝复合结构的透射光谱及偏振光谱表明,合金纳米复合结构在可见及近红外波段具有良好的透射比和消光比;铜钴合金纳米复合结构的确能够改善单一金属的特性,比如在近红外光区,其消光比(30 dB)优于铜纳米复合结构(17 dB).     

钴/氧化铝纳米有序阵列复合结构的光学特性研究

关键词：     

用PAA模板法实现硅基纳米孔阵列结构

用二次阳极氧化方法制备出分立、双向贯通并且超薄（500—1000 nm）的多孔阳极氧化铝膜,贴合到硅片上进行干法刻蚀,实现图形转移,得到了硅基纳米孔阵列结构,并对工艺中影响图形转移质量的因素进行了探索.扫描电镜（SEM）测试结果表明该途径得到的纳米结构孔形态均匀且大面积有序,孔深度可达到125 nm.对该样品进行热氧化处理后进行光致发光（PL）测试,结果表明其光致发光机理是基于通常较微弱的TO声子辅助的硅带边发光,并实现了显著发光增强,对这种增强效果的物理机理进行了理论分析.该结构具有的独特光学特性为利用 关键词： 多孔阳极氧化铝模板 硅基纳米孔阵列结构 图形转移     

通过氧化物前驱体非真空方法制备高质量CuInSe2薄膜

通过非真空工艺利用CuO、In₂O₃混合氧化物制备CuInSe₂薄膜太阳能电池中的吸收层CuInSe₂薄膜. 利用柠檬酸法制备出粒径在100 nm以下的CuO、In₂O₃混合氧化物纳米粉,在浆料中加入过量的硒,用来创造非平衡的反应条件促进氧化物的还原和硒化. 考察了影响硒化的几个反应条件,最优的硒化条件为1.9 kPa的Se蒸汽压中,550 °C硒化60 min.     

Studies of single-step electrodeposition of CuInSe2 thin films with sodium citrate as a complexing agent

The influences of various parameters in a single-step electrodeposition of CuInSe₂ from aqueous solution containing CuCl₂, InCl₃, and SeO₂, with sodium citrate as the complexing agent, are investigated. Co-deposition of CuInSe₂ from a room temperature, aqueous bath of these electrolytes is accomplished by the aid of sodium citrate. In this work the optimum potential for deposition of CuInSe₂ is found to be −0.5 V vs. Ag/AgCl, the deposition time is 800 s, the concentration ratio of CuCl₂, InCl₃, and SeO₂ is 9 mM:22 mM:22 mM in aqueous solution, and the annealing temperature is 225 °C. Under the optimum conditions, crystalline layers of CuInSe₂ having the chalcopyrite structure can be successfully synthesized. Cyclic voltammetry (CV), scanning electron microscope (SEM), X-ray diffractometer (XRD), and energy dispersive X-ray spectrometer (EDX) were used to examine the electrochemistry, morphologies, structures, and compositions of CuInSe₂ thin films deposited on ITO glass.     

Ag-Cu纳米颗粒修饰的N掺杂TiO2纳米棒阵列及其高效光催化CO2还原应用

本文采用微纳加工方法制备了负载高密度Ag-Cu纳米颗粒的N掺杂TiO₂纳米棒阵列样品. 通过TiO₂的N掺杂,可将其吸光范围调控至与Ag纳米颗粒的等离激元吸收频率相匹配的波段,从而实现复合材料中肖特基结与共振能量转移过程的协同作用. 与此同时,Cu纳米颗粒可以为CO₂还原提供活性位点. 在全谱光照射下,复合样品光催化CO₂还原的活性显著提高,CH₄生成速率可达720 μmol·g^-1·h^-1.     

Chalcogen-based thin film transistor using CuInSe2 photo-active layer

We propose chalcogen-based photo-thin film transistor (P-TFT) using CuInSe₂ (CIS) homo-junction. By using a tri-layer process, we fabricated n- and p-type CIS films. Optical and electrical properties of the fabricated CIS films are measured to be suitable for homo-junction. For the fabrication of a P-TFT, n-type CIS generating higher photo current was used for a channel layer whereas p-type CIS with higher carrier density was used for source and drain. The fabricated transistor exhibited typical transistor operation of p-channel enhancement mode and current increase with light.     

直接Z型CdO-CdS纳米棒阵列的制备及其光电催化性能研究

本文通过简单的水热法制备了一种CdO-CdS一维纳米棒阵列,并系统地研究了材料的结构、形貌及其光电化学性质和产氢活性. 所得纳米棒为直径100至200 nm的六方柱. 通过优化煅烧温度和时间得到了该实验条件下光电催化性能最优的样品. 在0 V vs. Ag/AgCl偏压下,CdO-CdS光电流密度为6.5 mA/cm²,光电催化产氢活性为240 μmol·cm^-2·h^-1,几乎是纯CdS的2倍. 该体系的光电催化性能超过了许多已报道的相似体系. 根据材料结构和光电化学性能表征结果,提出了直接z型光催化机理,该机理可以很好地解释光致载流子的高分离效率和优异的氧化还原性能.     

Fabrication of highly ordered CuInSe2 films with hollow nanocones for anti-reflection

Highly ordered CuInSe₂ films with hollow nanocones were fabricated by electron beam evaporation and nanospheres lithograph. From the AFM analyses, polystyrene nanospheres with diameter of 220 nm are assembled regularly on glass substrates. After reaction ion etching under different powers and residues removal, different and new surface morphologies of substrates have been obtained, such as smooth nanocones and hollow nanocones. The diffuse reflection spectra demonstrate that films on the substrates with periodic nanopatterned structure have less reflection over wavelengths ranged from 200 nm to 2500 nm due to light trapping. Especially, reflection for hollow nanocone arrays has the larger suppression value than nanocone-patterned films, which proves that surface pattern of hollow nanocones has better anti-reflection effect. Furthermore, while hollow depth increases from 6 nm to 9 nm, its optical antireflective effect becomes remarkable. These results could yield new options for solar-cell design with higher energy conversion efficiency.     

Optical properties of Al-doped CuInSe2 from the first principle calculation

Two kinds of exchange–correlation functional GGA–PBE and HSE06 were used in the first principle method to calculate the complex dielectric function of CuInSe₂ and CuAlSe₂. Compared with experimental data, GGA–PBE functional cannot properly predict dielectric function, while calculated results by HSE06 quantitatively agree with experimental data. With HSE06 functional, optical properties of CuIn_1−xAl_xSe₂ (x=0, 0.25, 0.5, 0.75 and 1) were calculated. As x increases from 0 to 1, within the solar spectrum, the real and the imaginary parts of the dielectric functions reduce, the static dielectric constant decreases from 7 to 5, the absorption coefficient and refractive indices decrease, while the optical band gap increases from 1.07 to 2.61 eV.     

Synthesis of Biomorphic ZrO2-CeO2 Nanostructures by Silkworm Silk Template

以桑蚕丝为模板制备多级生物形态结构ZrO₂-CeO₂. 整个合成过程是由桑蚕丝模板的导向作用决定的. 分析结果表明ZrO₂-CeO₂结晶良好,呈多级网络中空纤维结构,直径为16～28μm,800 oC煅烧后ZrO₂-CeO₂晶粒尺寸约为14 nm.     

Synthesis and characterization of TiO2/Fe2O3 core-shell nanocomposition film and their photoelectrochemical property

TiO₂/Fe₂O₃ core-shell nanocomposition film has been fabricated via two-step method. TiO₂ nanorod arrays are synthesized by a facile hydrothermal method, and followed by Fe₂O₃ nanoparticles deposited on TiO₂ nanorod arrays through an ordinary chemical bath deposition. The phase structures, morphologies, particle size, chemical compositions of the composites have been characterized by X-ray diffraction (XRD), field emission scanning electron microscope (FESEM) and ultraviolet-visible (UV-vis) spectrophotometer. The results confirm that Fe₂O₃ nanoparticles of mean size ca. 10 nm coated on the surface of TiO2 NRs. After depositing Fe₂O₃, UV-vis absorption property is induces the shift to the visible-light range, the annealing temperature of 600 °C is the best condition for UV-vis absorption property of TiO₂/Fe₂O₃ nanocomposite film, and increasing Fe content, optical activity are enhanced one by one. The photoelectrochemical (PEC) performances of the as-prepared composite nanorods are determined by measuring the photo-generated currents under illumination of UV-vis light. The TiO₂ NRs modified by Fe₂O₃ show the photocurrent value of 1.36 mA/cm² at 0 V vs Ag/AgCl, which is higher than those of unmodified TiO₂ NRs.