溶胶凝胶法制备Zn1-xFexO稀磁半导体

使用溶胶-凝胶法,制备了Fe掺杂的ZnO粉末衡磁半导体材料。通过X射线衍射对样品的晶格结构进行了分析,发现衍射峰的峰位随着Fe掺杂量出现偏移。当掺杂浓度低于6.66%时,Fe较好地替代了Zn的晶格位置,当掺杂浓度达到6.66%时出现杂相峰。使用超导量子干涉仪对所制备的磁性材料进行表征,得到了材料磁化率随温度变化关系曲线,并观察到明显的低温磁滞现象。对其磁性来源进行了分析。     

稀磁半导体Zn1-xFexO纳米颗粒的光谱研究

利用水热法制备了Zn1-xFexO(x=0,0.01,0.05,0.10和0.20)纳米稀磁半导体材料。由X射线衍射图谱的结果表明,制备的Zn1-xFexO样品为纤锌矿结构,没有金属铁等第二相出现;高分辨透射电子显微镜的结果表明,形貌为分散性良好的纳米颗粒,晶格清晰;拉曼光谱结果表明(E2High)峰位向高频移动,半高宽宽化,峰强减弱;光致发光光谱结果表明,随着Fe离子的掺入,紫外峰向低能移动,光致发光光谱发生了猝灭现象;UV-Vis光谱可看出,光学带隙减小,发生了红移现象。这些结果表明Fe3+成功替代Zn2+进入到ZnO晶格。     

Cu对Zn1－xFexO稀磁半导体磁性的影响

采用水热法,在温度430 ℃,填充度35%,矿化剂为3 mol·L^-1KOH,前驱物为添加适量的FeCl₂·6H₂O的Zn(OH)₂,反应时间24h,合成了Zn_1-xFe_xO和Zn_1-xFe_xO：Cu稀磁半导体晶体.当在Zn(OH)₂中添加一定量的FeCl₂·6H₂O为前驱物,水热反应产物为掺杂Fe的Zn_1-xFe_xO多种形态晶体混合物,其个体较大的晶体中的Fe原子百分比含量为0.49%—0.52%.采用超导量子干涉磁强计测量了材料的磁性,晶体的磁化强度随温度下降而减小.在前驱物中同时加入适量比例的Cu化合物,合成了共掺杂Cu的Zn_1-xFe_xO：Cu,和Zn_1-xFe_xO相比,其室温下的磁化强度有明显的提高,且在室温下具有铁磁性.关键词：氧化锌水热稀磁半导体晶体     

一种具有“1111”型结构的新型稀磁半导体(La1–xSrx)(Zn1–xMnx)SbO

利用高温固相反应法,成功合成了一种新型块状稀磁半导体(La_1–xSr_x)(Zn_1–xMn_x)Sb O(x=0.025, 0.05,0.075, 0.1).通过(La³⁺, Sr²⁺)、(Zn²⁺, Mn²⁺)替换,在半导体材料La Zn Sb O中分别引入了载流子与局域磁矩.在各掺杂浓度的样品中均可观察到铁磁有序相转变,当掺杂浓度x=0.1时,其居里温度Tc达到了27.1 K,2 K下测量获得的等温磁化曲线表明其矫顽力为5000 Oe.(La_1–xSr_x)(Zn_1–xMn_x)Sb O与\"1111\"型铁基超导体母体LaFeAsO、\"1111\"型反铁磁体LaMnAsO具有相同的晶体结构,且晶格参数差异很小,为制备多功能异质结器件提供了可能的材料选择.     

燃烧反应法制备纳米Zn1-xNixO粉体

采用燃烧反应法制备了纳米Zn1-xNixO粉体。结果表明,当Ni掺杂量增加到x=0.010时,样品中不仅部分Ni2+取代了Zn2+,还出现了立方NiO;通过FTIR发现样品在1041.68cm-1附近出现了一个新的吸收带,表现出良好的红外吸收特性。     

Zn1-xMnxS(001)稀磁半导体薄膜的能量稳定性、磁性和电子结构

通过基于广义梯度近似的总能密度泛函理论研究不同Mn掺杂浓度的ZnS(001)薄膜的电学和磁学特性. 计算单个Mn原子和两个Mn原子处于各种掺杂位置及不同的磁耦合状态时的能量稳定性.计算了单个Mn原子掺杂和两个Mn原子掺杂的ZnS(001)薄膜的态密度. 不同掺杂组态的p-d杂化的程度不同. 不同掺杂组态,Mn原子所处的晶场环境不同,所以不同掺杂组态的Mn的3d分波态密度峰的劈裂有很大的不同. 掺杂两个Mn原子时,得到三种稳定组态的基态都是反铁磁态. 分析了以上三种能量稳定的组态中,两个Mn原子在不同磁耦合状态下的3d态密度图. 当两原子为铁磁耦合时,由于d-d电子相互作用,使反键态的态密度峰明显加宽. 随着Mn掺杂浓度的增加,Mn原子有相互靠近,并围绕S原子形成団簇的趋势. 对于这样的组态,Mn原子之间为反铁磁耦合能量更低.     

金属有机化学气相沉积生长Zn1-xMnxSe薄膜的发光和磁光性质

利用金属有机化学气相沉积(MOCVD)方法在GaAs衬底上生长了不同组分的Zn_1-xMn_xSe薄膜。X射线衍射和X射线摇摆曲线证明样品具有较好的结晶质量。在低温、强磁场下对样品的发光进行了研究,在带边附近观察到两个发光峰的相对强度随着磁场增强发生了变化。通过变温光谱探讨了这两个发光峰的来源,并被分别归因于自由激子跃迁和与Mn有关的束缚态激子跃迁。同时随着磁场的增强,ZnMnSe带隙发光红移是由于类S带和类P带电子与Mn离子的3d⁵电子的自旋交换作用。     

非简并p型Hg1-xMnxTe单晶(x>0.17)的负磁电阻机理研究

研究磁性半导体中负磁电阻产生机理对正确理解载流子与磁性离子间的sp-d磁交换作用 是非常重要的.通过变温(10---300 K)磁输运和变温(5---300 K)磁化率实验研究了一系列不同Mn含量 非简并p型Hg_1-xMn_xTe单晶(x>0.17)的负磁电阻和顺磁增强效应. 实验结果表明其负磁电阻与温度的关系和磁化率与温度的关系基本一致, 两者都包含一个呈指数型变化的温度函数exp(-K/T).根据磁性半导体的杂质能级理论, 非简并p型Hg_1-xMn_xTe单晶在低磁场范围内出现负磁电阻效应的主要物理机理 为外磁场的磁化效应使得受主杂质或受主型束缚磁极化子的有效电离能减小.     

电泳沉积法制备的Zn1-xCxO薄膜的结构及阻变性能

采用电泳沉积法在FTO导电玻璃基片上制备Zn_1-xCu_xO薄膜,并对其微观结构、光致发光谱、伏安特性、保持特性和转换电压分布进行探讨。PL谱表明,Cu掺杂在禁带中引入深受主能级,降低氧空位浓度,导致ZnO薄膜的紫外发光、蓝光发光和绿光发光峰强度降低。所得薄膜的晶粒细小、致密、均匀,具有稳定的双极性阻变特性,开关比R_off/R_on最高达到10⁵,其低阻态（LRS）和高阻态（HRS）的阻变机理分别符合欧姆定律和空间电荷限制传导理论。器件经100次循环测试后开关比无明显变化,呈现出较为良好的抗疲劳特性。Cu掺杂对LRS影响不大,但显著改善了HRS的分散性以及转换电压V_SET的分散性。当Cu掺杂量x=0.04时,器件表现出良好的综合性能：R_off≈10⁶ Ω,R_off/R_on≈10⁴,V_SET介于0.4~3.03 V之间。     

高压下半磁半导体Cd1-xMnxSe的相变研究

利用金刚石对顶砧高压装置,并分别用光吸收和X射线衍射实验方法测量了Cd_1-xMn_xSe样品在高压下的相变,发现该样品的高压相变是不可逆,常压下Cd_1-xMn_xSe具有纤维锌矿结构,高压下变为NaCl结构,而卸压后成为闪锌矿结构,同时给出了Cd_1-xMn_xSe样品的相变压力及其与组分x的关系。关键词：     

Influence of defects on magnetism of Co-doped ZnO

Two kinds of Zn_0.97Co_0.03O powders were prepared by precursor thermal decomposition under different conditions. One grown at low temperature has a positive Curie-Weiss temperature Θ, while the other grown at high temperature has a negative Θ. Both of them contain oxygen vacancies. There are more shallow donors in the former than those in the latter. It is proposed that coexistence of oxygen vacancies and shallow donors is necessary to induce ferromagnetic coupling between Co ions.     

Synthesis and structural,magnetic characterization of Zn(Mn)O diluted magnetic semiconductor

The bulk samples with nominal composition Zn_1−x Mn_x O [x = 5% and 7%] were synthesized at 930 °C by Standard Solid State Reaction method. The structural analysis reveals the single phase nature. The Topography study indicates the distribution of the particles. Magnetic property was affirmed by Vibrating Sample Magnetometer, Zn_1−x Mn_x O (with x = 5%), low concentration of dopant shows good ferromagnetism compared to high concentration in Zn_1−x Mn_x O (with x = 7%).     

Room temperature ferromagnetic pure ZnO

Pure ZnO films were prepared by pulsed laser deposition on oxidized Si substrates under different oxygen pressure and substrate temperature. Clear room temperature ferromagnetism has been observed in the ZnO film prepared under high vacuum and room temperature. The observation of anomalous Hall effect confirms the intrinsic nature of the ferromagnetism. The photoluminescence and X-ray photoelectron spectroscopy spectra show the high concentration of oxygen vacancies in the ferromagnetic ZnO film. Our results clearly demonstrate the ferromagnetic contribution of the oxygen vacancies mediated by the spin polarized electrons hopping between discrete states in pure ZnO.     

Fabrication and properties of Li-doped ZnCoO diluted magnetic semiconductor thin films

Li-doped ZnCoO (ZnCoO:Li) diluted magnetic semiconductor thin films were prepared on SiO₂ substrates by pulsed laser deposition. In ZnCoO:Li films, Co²⁺ substituted Zn²⁺ and Li occupied the interstitial sites behaving as donors. The ZnCoO:Li films are of high electron concentration in the 10²⁰ cm⁻³ order and acceptable crystal quality with a hexagonal wurtzite structure. No cluster, precipitate, or second phase was found from the X-ray diffraction pattern and Co k-edge X-ray absorption near-edge structure measurements. The sp-d exchange interactions between the band electrons and the localized d electrons of Co ions substituting Zn ions were observed. The magnetization of ZnCoO:Li film is 0.61 μB/Co, higher than that of the ZnCoO film (0.49 μB/Co). The enhanced defect density and electron concentration due to the introduced Li donors may answer for the improvement of ferromagnetism at room temperature.     

Magnetic properties of Zn0.9(Mn0.05,Ni0.05)O nanoparticle: Experimental and theoretical investigation

The crystalline and magnetic properties of 5% Mn and 5% Ni co-doped nanocrystalline ZnO particles, obtained by the co-precipitation method, are performed. X-ray diffraction data revealed that Zn_0.90Mn_0.05Ni_0.05O crystallizes in the monophasic wurtzite structure. DC magnetization measurement showed that the samples are paramagnetic at room temperature. However, a large increase in the magnetization is observed below 50 K. This behavior, along with the negative value of Weiss constant obtained from the linear fit of magnetic susceptibility data below room temperature, indicates ferrimagnetic behavior. The ferrimagnetic properties observed at low temperature are explained and confirmed from ab-initio calculations using the Korringa–Kohn–Rostoker method combined with the coherent potential approximation.     

The structure and magnetic properties of Cu-doped ZnO prepared by sol-gel method

The Cu-doped ZnO and pure ZnO powders were synthesized by sol-gel method. The structural properties of the samples were investigated by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and X-ray absorption spectroscopy. All the results confirmed that copper ions were well incorporated into the ZnO lattices by substituting Zn sites without changing the wurtzite structure and no secondary phase existed in Cu-doped ZnO nanoparticles. The Zn_0.97Cu_0.03O nanoparticles exhibited ferromagnetism at room temperature, as established by the vibrating sample magnetometer analysis.     

Structure and ferromagnetic properties of Co-doped ZnO powders

Single-phase Zn_1−xCo_xO (x=0.02, 0.04) powders were synthesized by a simple co-precipitation technique. X-ray diffraction analysis reveals that the Co-doped ZnO crystallizes in a wurtzite structure. The lattice constants of Co-doped ZnO powders decrease slightly when Co is doped into ZnO. Optical absorption spectra show a decrease in the bandgap with increasing Co content and also give an evidence of the presence of Co²⁺ ions in tetrahedral sites. Raman spectra indicate that Co doping increased the lattice defects and induced another Raman vibration mode around at 538 cm⁻¹, which is an indicator for the incorporation of Co²⁺ ions into the ZnO host matrix. Magnetic measurement reveals that the Zn_1−xCo_xO (x=0.02, 0.04) powders clearly exhibit room-temperature ferromagnetic behavior, which makes them potentially useful as building components for spintronics.     

掺钴氧化锌稀磁半导体的SEM及X射线能谱微分析研究

采用水热法,以CoCl₂·6H₂O为前驱物,KOH作为矿化剂合成了掺钴氧化锌稀磁半导体晶体。利用扫描电子显微镜(SEM)及X射线能谱仪(XREDS)对合成晶体的微观形貌、表面及内部掺杂元素Co的相对含量和分布的均匀性进行了研究。研究结果表明：水热法合成的掺Co氧化锌晶体具有多种微观形貌,较大的晶体具有极性生长特性。随晶体形貌不同,显露面也发生了相应改变。不同微观形貌的晶体其Co含量有所差异,较大的晶体掺杂Co元素相对含量大于较小的晶体,+c(1011)显露面Co元素的含量比+c(1010)面高,锥柱状晶体其区别尤为明显。大的晶体内部存在着少量的氧化钴团簇,晶体表面与晶体内部Co元素分布相对均匀。由于Co2+具有磁性,因此,氧化钴团簇的存在将对氧化锌稀磁半导体晶体的磁性产生一定的影响。     

Synthesis of Mn-doped ZnO diluted magnetic semiconductors in the presence of ethyl acetoacetate under solvothermal conditions

Mn-doped ZnO samples with 5%, 20% and 40% nominal Mn concentrations were prepared in the presence of ethyl acetoacetate under solvothermal conditions. UV absorption spectroscopic analysis discloses that chemical modification was achieved by reaction of Zn or Mn precursor with ethyl acetoacetate in ethanol medium. XRD and HRTEM characterizations indicate that ZnMnO₃ impurity phase was formed in the 20% and 40% Mn-doped ZnO samples while no secondary phase was present in the 5% Mn-doped sample. The 5% Mn-doped sample consists of spheroid-like particles with size of 10-50 nm and has a real Mn concentration of 3.2%. Ferromagnetism and paramagnetism coexist in the 5% Mn-doped ZnO sample at room-temperature, which may arise from ferromagnetic exchange interaction as well as small secondary phases. The 20% and 40% Mn-doped samples show large paramagnetic effects at room temperature. Small paramagnetic secondary phases and clustering of Mn are probably responsible for this.