Perhydridosilicone films produced by IR laser‐induced chemical vapour deposition from disiloxane

Solid perhydridosilicone films have been produced by transversely excited atmospheric (TEA) and continuous‐wave CO₂ laser‐induced gas‐phase decompositions of H₃SiOSiH₃ controlled by elimination and polymerization of transient silanone H₂SiO and affording silane and hydrogen as side products. The decomposition mechanism is supported by evidence of scavenged intermediates and minor volatile products. The films are characterized by FT infrared and x‐ray photoelectron spectroscopy and by scanning electron microscopy and shown to undergo facile oxidation of the topmost layers in air and chemical changes upon argon ion sputtering. Copyright © 2000 John Wiley & Sons, Ltd.     

Model of electrochromic and related phenomena in tungsten oxide thin films

We have developed a model of electrochromic and related phenomena in tungsten oxide thin films based on the assumption that the constitution of such films is heterogeneous and built up of nanosized particles, pores and adsorbed substances (mainly water). It is discussed why a high-efficiency reversible blue colour is observed in amorphous tungsten oxide films (α-WO₃ films) as well as why such porous thin films with polycrystalline or amorphous constitution and with a variety of particle properties can be easily obtained by a physical vapour deposition process in a low-pressure atmosphere in the presence of water. A substrate temperature in the range 450–550 K corresponds to some plateau on the water desorption curves which divided physically adsorbed water from chemically adsorbed water. Two types of structural units based on tetrahedrally and octahedrally coordinated tungsten ions have the main role in the formation of the film constitution. The tetrahedral structural units have a glass-forming function, but the octahedral ones have a modification function. From the electrochemistry point of view, the internal multiphase interfaces in such films are distributed multiphase electrodes. The adsorbed water together with defects of the oxide particles provide reagents for reversible coloration reactions in the film. The colour centres can be induced thermally (oxygen nonstoichiometry) or electrically (injected ions) or by radiation (photoinjected hydrogen). The electrochromism and related phenomenon of α-WO₃ films can be directly related to ion insertion/extraction processes controlled by external forces. Electronic Publication     

Determination of the optical constants of solar‐control amorphous silicon thin films on float glass

An improved method employing a modified Forouhi and Bloomer disperse model with a hybridized simulated annealing algorithm is implemented in this paper, allowing the determination of refractive index, extinction coefficient, and thickness of a‐Si films at one time by fitting reflectance and transmitted spectra. The thickness of films obtained by this method has a reasonable agreement with the result by ellipsometric measurement, especially for samples with thickness in the range of 40–80 nm. The presented method exhibits low time consumption and cost, which implies a possibility of usage in real‐time on‐line measurement of solar‐control coatings on float glass. Copyright © 2009 John Wiley & Sons, Ltd.     

Synthesis and Structural Characterization of β‐Ketoiminate‐Stabilized Gallium Hydrides for Chemical Vapor Deposition Applications

Bis‐β‐ketoimine ligands of the form [(CH₂)_n{N(H)C(Me)?CHC(Me)?O}₂] (LⁿH₂, n=2, 3 and 4) were employed in the formation of a range of gallium complexes [Ga(Lⁿ)X] (X=Cl, Me, H), which were characterised by NMR spectroscopy, mass spectrometry and single‐crystal X‐ray diffraction analysis. The β‐ketoimine ligands have also been used for the stabilisation of rare gallium hydride species [Ga(Lⁿ)H] (n=2 ( 7 ); n=3 ( 8 )), which have been structurally characterised for the first time, confirming the formation of five‐coordinate, monomeric species. The stability of these hydrides has been probed through thermal analysis, revealing stability at temperatures in excess of 200 °C. The efficacy of all the gallium β‐ketoiminate complexes as molecular precursors for the deposition of gallium oxide thin films by chemical vapour deposition (CVD) has been investigated through thermogravimetric analysis and deposition studies, with the best results being found for a bimetallic gallium methyl complex [L³{GaMe₂}₂] ( 5 ) and the hydride [Ga(L³)H] ( 8 ). The resulting films ( F5 and F8 , respectively) were amorphous as‐deposited and thus were characterised primarily by XPS, EDXA and SEM techniques, which showed the formation of stoichiometric ( F5 ) and oxygen‐deficient ( F8 ) Ga₂O₃ thin films.     

IR laser‐induced decomposition of disiloxane for chemical vapour deposition of poly(hydridosiloxane) films

Continuous‐wave CO₂‐laser‐induced gas‐phase decomposition of H₃SiOSiH₃, dominated by elimination and polymerization of transient silanone H₂SiO and yielding silane and hydrogen as side‐products, represents a convenient process for chemical vapour deposition of poly(hydridosiloxane) films. Copyright © 1999 John Wiley & Sons, Ltd.     

Influence of substrate nature on the growth of copper oxide thin films

Cu thin films were deposited on Si(111), glass, and quartz substrates by magnetron sputtering. X‐ray diffraction, SEM, and photoemission electron microscope studies were carried out to characterize the films. An influence of the nature of substrate on the Cu₂O and CuO phases formed was observed. Copper silicide formation in case of silicon substrates aided in formation of Cu₂O rather than CuO unlike glass and quartz substrates. Formation of nanocrystallites was observed by SEM and X‐ray diffraction. Copyright © 2016 John Wiley & Sons, Ltd.     

UV laser photolysis of silacyclopent‐3‐ene: effect of admixtures on nature of chemically vapour‐deposited organosilicon films

Examination of ArF laser‐induced gas‐phase photolysis of silacyclopent‐3‐ene, occuring as extrusion of silylene, in the presence of admixtures reveals that photolysis is not interfered with in the presence of N₂, CO and CO₂, but it is in the presence of O₂, 2‐C₄F₈, CH₃OH, CD₃OH, CF₃CH₂OH and CH₃CO₂H. Formation of volatile products and solid deposited films incorporating fluorine or oxygen atoms is interpreted in terms of reactions of silylene with the admixtures. Copyright © 2002 John Wiley & Sons, Ltd.     

Electrical,optical, and structural characterization of p‐type N‐doped SnO thin films prepared by thermal oxidation of sputtered SnNx thin films

We present a study of electrical and optical properties of nitrogen‐doped tin oxide thin films deposited on glass by the DC Magnetron Sputtering method. The deposition conditions to obtain p‐type thin films were a relative partial pressure between 7% and 11% (N₂ and/or O₂), a total working pressure of 1.8 mTorr and a plasma power of 30 W. The deposited thin films were oxidized after annealing at 250°C for 30 minutes. X‐ray diffraction results showed that the as‐deposited thin films exhibit a Sn tetragonal structure, and after annealing, they showed SnO tetragonal structure. X‐ray photoelectron spectroscopy results showed the presence of nitrogen in the samples before and after annealing. The measured physical parameters of the thin films were optical band gap between 1.92 and 2.68 eV, resistivity between 0.52 and 5.46 Ωcm, a concentration of p‐type carriers between 10¹⁸ and 10¹⁹ cm^?3, and a Hall mobility between 0.1 and 1.94 cm²V^?1s^?1. These thin films were used to fabricate p‐type thin film transistors.     

Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of highT _c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, superconductor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.     

Plasma pretreatment of polycarbonate substrates for indium zinc oxide film deposition

The influence of plasma treatment of polycarbonate (PC) substrates on the morphological, electrical, and adhesion properties of deposited amorphous transparent indium zinc oxide (IZO) by direct current magnetron sputtering was investigated by analyzing atomic force microscopy, contact angles, Hall, and nano‐scratch measurements. The surfaces of PC substrates were performed by plasma treatment at various processing times in Ar/O₂ mix atmosphere. The atomic force microscopy images indicated that the microstructure of the substrates considerably influenced the surface morphology of deposited IZO films, and the least surface roughness of IZO was obtained after 5‐s plasma treatment. The IZO film deposited on PC with 5‐s plasma treatment presented an improved electrical conductivity and thermal stability after annealing at 120 °C in air, whereas the significant decrease in carrier concentration and increase in resistivity with extending plasma treatment time were observed, which was attributed to the elevated oxygen adsorption during annealing for a loosely packed structure. Moreover, the adhesion properties of IZO films with PC substrates decreased after 30‐s plasma treatment because of the significant difference on the surface polarity between the PC and thin films and the increased roughness caused by plasma etching. Copyright © 2016 John Wiley & Sons, Ltd.     

Antibacterial and physicochemical properties of co‐sputtered CuSn thin films

Copper‐tin thin films (CT TFs) were deposited on p‐type Si(100) by radio frequency (RF) magnetron co‐sputtering method. The atomic ratio of Cu and Sn showed complementary tendency with various RF powers on metal targets. Antibacterial test was conducted with Gram‐negative Escherichia coli. The ratio of Cu and Sn ions and the contact time with E. coli affected the antibacterial efficiency. Increasing the ratio of Cu ions and contact time showed higher antibacterial activity. Cu₂₀Sn₆ called as bronze structure, metallic Cu, and copper oxide phases were identified from X‐ray diffraction data after sterilization. The lattice strain that was changed due to the substitution of Cu and Sn was also calculated. The surface morphology of CT TFs was entirely grown to round shape when the dominant element was Sn. But, as the content of Cu increased, the surface morphology was changed from ball shape to sharp column shape. When fixed contact time, the intensities of Cu 2p increased but the intensities of Sn 3d decreased as increasing the atomic ratio of Cu. The oxidation of Cu was more sharply progressed as the RF power on Cu target increased. When fixed CT TFs, the intensities of Cu 2p were consistent but the intensities of Sn 3d_3/2 decreased as increasing contact time between CT TF and E. coli.     

UV‐laser‐induced photolysis of trimethyl(vinyloxy)silane for chemical vapour deposition of polysiloxane films

The UV‐induced photolysis of trimethyl(vinyloxy)silane (TMVSi) induced by ArF laser, affording a multitude of unsaturated hydrocarbons and a solid polydimethylsiloxane, represents a convenient process of chemical vapour deposition in which the silicon of the parent is almost completely utilized for the formation of the solid phase and in which the morphology and composition of the films is affected by the configuration of the substrate and laser beam. Copyright © 1999 John Wiley & Sons, Ltd.     

Thickness dependence of free‐standing thin films

Below a critical thickness, of about 60 nm, the glass transition temperature of polystyrene (PS) films decreases with film thickness, as demonstrated using free‐standing films. A geometrical model is developed here describing this phenomenon in the case of ideal (Gaussian) chains. This model, which can be considered as an application of the free volume model, assumes that the decrease of the glass transition temperature from thick to ultrathin films is due to the modification of the interpenetration between neighboring chains. The theoretical curve deduced from the model is in excellent agreement with the PS experimental results, without using any adjustable parameters. From these results, it can be concluded that new chain motions, usually buried in bulk samples, are expressed by the presence of the surface. © 2006 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 45: 10–17, 2007     

Inverted polymer solar cells with a solution-processed zinc oxide thin film as an electron collection layer

A solution-processed zinc oxide (ZnO) thin film as an electron collection layer for polymer solar cells (PSCs) with an inverted device structure was investigated. Power conversion efficiencies (PCEs) of PSCs made with a blend of poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl C61-butyric acid methyl ester (PCBM) are 3.50% and 1.21% for PSCs with and without the ZnO thin film, respectively. Light intensity dependence of the photocurrent and the capacitance-voltage measurement demonstrate that the increased PCEs are due to the restriction of the strong bimolecular recombination in the interface when a thin ZnO layer is inserted between the polymer active layer and the ITO electrode. These results demonstrate that the ZnO thin film plays an important role in the performance of PSCs with an inverted device structure.     

DSC of as-deposited thin films dip-coated on the substrate

The formation process of a ceramic (indium oxide) thin film (thickness: approximately 20 nm to several microns) was investigated by thermal analyses. Thermal changes of an organic precursor, indium(III) 2-ethylhexanoate, dip-coated on a glass substrate was successfully detected by DSC in air. Exothermic phenomena were observed at marked lower temperatures for the thin films than for the bulk material; thinner films had slightly lower peak temperatures. The reaction mechanism is discussed with reference to mass spectra of the evolved gases.     

Phthalonitrile‐containing aromatic polyimide thin films with nano‐actuation properties

Polymer films of some polyimides containing pendant phthalonitrile groups were prepared by casting the corresponding poly(amic acid) solutions onto glass plates, followed by thermal imidization under controlled temperature conditions. The poly(amic acid)s were synthesized by polycondensation reaction of 4,4′‐diamino‐4″‐(3,4‐dicyanophenoxy)triphenylmethane, 1, or of different amounts of 1 and 4,4′‐bis(4‐aminophenoxybiphenyl), with two aromatic dianhydrides, 4,4′‐oxydiphthalic anhydride or benzophenone‐3,3′,4,4′‐tetracarboxylic dianhydride. Most of the films were flexible and tough and exhibited high thermal stability, having the initial decomposition temperature above 400 °C. Dynamic mechanical analysis and dielectric spectroscopy revealed the influence of phthalonitrile group content on the relaxation processes of polyimides. The values of the dielectric constant at 10 kHz and 20 °C were in the range of 3.25–3.61. The films exhibited nano‐actuation in the range of 240–480 nm, depending on the phthalonitrile group content, when an electric voltage was applied on their surface. Copyright © 2012 John Wiley & Sons, Ltd.     

Structural study of lanthanum nickelate thin films deposited on different single crystal substrates

Fabrications of La₂NiO_4+δ thin film layers by liquid-injection metalorganic chemical vapor deposition were tried on different single crystals substrates: (001)Si, (001)MgO, (001)LaAlO₃ and (001)SrTiO₃. As results of structural characterizations, polycrystalline dendritic layers of La₂NiO_4+δ tetragonal (or orthorhombic) phase were observed on (001)Si substrates while layers of a perovskite-like cubic structure were observed on the other single crystal substrates. From a high-resolution TEM study of a layer deposited on (001)MgO, such a perovskite-like cubic structure exhibits many planar structural faults likely similar to planes of oxygen vacancies of the La₂NiO_4+δ orthorhombic structure. A thin intermediate epitaxial layer of NiO phase was also identified. Using a X-ray texture diffractometer, the layer structure on (001)MgO, (001)LaAlO₃ and (001)SrTiO₃ was confirmed to be of cubic structure with 〈100〉 axes parallel to those of the substrate. The T dependence of the resistivity of a layer deposited on (001)MgO substrate was found to be of a semi-conducting behavior.     

Atomic layer deposition of crystalline molybdenum oxide thin films and phase control by post-deposition annealing

Molybdenum forms a range of oxides with different stoichiometries and crystal structures, which lead to different properties and performance in diverse applications. Herein, crystalline molybdenum oxide thin films with controlled phase composition are deposited by atomic layer deposition. The MoO₂(thd)₂ and O₃ as precursors enable well-controlled growth of uniform and conformal films at 200–275 °C. The as-deposited films are rough and, in most cases, consist of a mixture of α- and β-MoO₃ as well as an unidentified suboxide MoO_x (2.75 ≤ x ≤ 2.89) phase. The phase composition can be tuned by changing deposition conditions. The film stoichiometry is close to MoO₃ and the films are relatively pure, the main impurity being hydrogen (2–7 at-%), with ≤1 at-% of carbon and nitrogen. Post-deposition annealing is studied in situ by high-temperature X-ray diffraction in air, O₂, N₂, and forming gas (10% H₂/90% N₂) atmospheres. Phase-pure films of MoO₂ and α-MoO₃ are obtained by annealing at 450 °C in forming gas and O₂, respectively. The ability to tailor the phase composition of MoO_x films deposited by scalable atomic layer deposition method represents an important step towards various applications of molybdenum oxides.     

Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β-zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S₂CNnBu₂)₂) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr₂) in P-xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.