Temperature-dependent dry etching characteristics of III–V semiconductors in HBr- and HI-based discharges

Microwave discharges of HBr/H₂/Ar and H/H₂/Ar with additional do biasing of the sample were used to etch InP, GaAs, and AlGaAs at temperatures between 50–250°C. The etch rates increase by factors of 3–50 and 5–9, respectively, for HBr-and HI-based discharges over this temperature range, but display non-Arrhenius behavior. The etched surfaces became very rough above 100°C for InP with either discharge chemistry due to preferential loss of P, while GaAs and AlGaAs are more tolerant of the elevated temperature etching. The near-surface electrical properties of InP are severely degraded by etch temperatures above 100°C, while extensive hydrogen in-diffusion occurs in GaAs and AlGaAs under these conditions, leading to dopant passivation which can be reversed by annealing at 400°C.     

Use of CF3,Br/Al,discharges for reactive ion etching of III-V semiconductors

The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF₃Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm^–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF₃Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min^–1 at 0.56 W · cm^–2, to 1550 Å · min at 1.3 W · cm^–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm^–2. These etch rates are comparable to those obtained with CCI₂F₂:O₂ mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm^–2, due to the introduction of deep level trapping centers. At 1.3 W· cm^–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl₂F₂-based mixtures. High-power etching with CF₃Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable.     

Dry etching characteristics of III–V semiconductors in microwave BCl3 discharges

Electron cyclotron resonance (ECR) BCl₃ discharges with additional rf biasing of the sample position have been used to etch a variety of III–V semiconductors. GaAs and Al_xGa_1–xAs (x = 0–1) etch at equal rates in BCl₃ or BCl₃/Ar discharges, whereas SF₆ addition produces high selectivities for etching GaAs over AlGaAs. These selectivities are in excess of 600 for dc biases of –150 V, and fall to 6 for biases of –300 V. If the dc biases are kept to – 100 V, there is no measurable degradation of the optical properties of the GaAs and AlGaAs. The AlF₃ formed on the AlGaAs surface during exposure to BCl₃/SF₆ plasmas can be removed by sequential rinsing in dilute NH₄OH and water. In-based materials (InP, InAs, InSb, InGaAs) etch at slow rates with relatively rough morphologies in BCl₃ plasmas.     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part I: GaAs and related compounds

A systematic study has been performed of the dry etching characteristics of GaAs, Al_0.3Ga_0.7As, and GaSb in chlorine-based electron cyclotron resonance (ECR) discharges. The gas mixtures investigated were CCl₂F₂/O₂, CHCl₂F/O₂, and PCl₃. The etching rates of all three materials increase rapidly with applied RF power, while the addition of the microwave power at moderate levels (150 W) increases the etch rates by 20–80%. In the microwave discharges, the etch rates decrease with increasing pressure, but at 1 m Torr it is possible to obtain usable rates for self-bias voltages 100 V. Of the Freon-based mixtures, CHCl₂F provides the least degradation of optical (photoluminescence) and electrical (diode ideality factors and Schottky barrier heights) properties of GaAs as a result of dry etching. Smooth surface morphologies are obtained on all three materials provided the microwave power is limited to 200 W. Above this power, there is surface roughening evident with all of the gas mixtures investigated.     

Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures

Vinyl iodide (C₂H₃I) microwave discharges with additions of H₂ and Ar are found to provide faster etch rates than conventional CH₄/H₂/Ar discharges for InP, InGaAs, GaAs, and AlGaAs. This is a result of the relatively high volatilities of indium, gallium, and aluminum iodide species. The etched features are smooth and anisotropic over a wide range of do self-biases (–150 to –350 V), process pressures (1–20mTorr), and microwave powers (150–500 W). The polymer that forms on the mask during the plasma exposure can be readily removed in O₂ discharges. Electron spectroscopy for chemical analysis (ESCA) showed that the etched surfaces are slightly deficient in the group V elements under most conditions, but changes to the optical properties of the semiconductors are minimal. No defects are visible by transmission electron microscopy (TEM) in GaAs or InP samples etched at dc biases –250 V.     

Solubility of nonpolar gases in tetrahydrofuran at 0 to 30°C and 101.33 kPa partial pressure of gas

Solubility measurements of several nonpolar gases (He, Ne, Ar, Kr, Xe, H₂, D₂, N₂, CH₄, C₂H₄, C₂H₆, CF₄ and SF₆) in tetrahydrofuran from 0 to 30°C and 101.33 kPa partial pressure of gas are reported. Thermodynamic functions for the solution process (Gibbs energy, enthalpy, and entropies) at 25°C are evaluated from experimental values of gas solubility as mole fractions and their variation with temperature. Lennard-Jones 6–12 pair potential parameters for tetrahydrofuran are estimated using the scale particle theory; experimental solubilities as mole fraction are compared with values calculated using this theory.     

Solubility of nonpolar gases in tetrahydropyran at 0 to 30°C and 101.33 kPa partial pressure of gas

Solubility measurements of several nonpolar gases (He, Ne, Ar, Kr, Xe, H₂, D₂, N₂, CH₄, C₂H₄, C₂H₆, CF₄, and SF₆) in tetrahydropyran at the temperature range 0 to 30°C and 101.33 kPa partial pressure of gas are reported. Thermodynamic functions for the solution process (Gibbs energy, enthalpy, and entropies) at 25°C are evaluated from the experimental values of the solubility of gases as mole fraction and their variation with the temperature. Lennard-Jones 6–12 pair potential parameters for tetrahydropyran are estimated by using the scale particle theory (SPT); and experimental solubilities are compared with the calculated values using this model. Experimental solubilities of gases in tetrahydropyran and intermolecular potential parameters are compared with those obtained for the same gases in other cycloethers.     

Hybrid electron cyclotron resonance-radio-frequency plasma etching of III–V semiconductors in Cl2-based discharges. Part II: InP and related compounds

Electron Cyclotron Resonance (ECR) discharges of CCl₂F₂ or PCl₃ have been used to etch InP, InAs, InSb, InGaAs and AlInAs. The etch rates of these materials increase linearly with additional RF power level applied to the cathode and are in the range 50–180 Å · min^–1 for 50 W (DC bias 308 V), 10 mTorr, 38 CCl₂F₂/2 O₂ plasmas. The etch rates fall rapidly with increasing pressure or increasing O₂-to-CCl₂F₂ ratio. Polymeric surface residues up to 40 Å thick are found on all of these semiconductors when using Freon-based gas mixtures. Etching at practical rates is possible with only 100 V self-bias when using PCl₃ discharges, and the addition of microwave excitation under these conditions enhances the etch rates by factors of 2–9. At higher self-biases (300 V) etch rates of 3500–8000 Å · min^–1 are possible with PCl₃ although the surface morphologies are significantly rougher and the etching less anisotropic than with CCl₂F₂-based mixtures.     

Chemically assisted ion beam etching of silicon and silicon dioxide using SF6

A chemical flux of sulfur hexafluoride (SF₆) in conjunction with low-energy Ar-ion bombardment has been used for chemically assisted ion beam etching (CAIBE) of silicon and silicon dioxide. The study has shown a large degree of independent control over the selectivity and anisotropy in dry etching. The total etch rate could be controlled by varying either the Ar-ion milling parameters or the chemical flux of SF₆. Etch rate enhancement of 7–8 for silicon and 3–4 for silicon dioxide have been obtained over pure physical etching.     

Solubility of non polar gases in formaldehyde diethyl acetal between-10 and 30°C,and 1 Atm partial pressure of gas

Solubility measurements of the gases He, Ne, Ar, Kr, Xe, H₂, D₂, N₂, CH₄, C₂H₄, C₂H₆, CF₄, SF₆, and CO₂ in formaldehyde diethyl acetal in the range of –10 to 30°C, and a gas partial pressure of 1 atmosphere (101.32 kPa) are reported. Standard changes of thermodynamic functions for the solution process are evaluated. The scaled particle theory is used to obtain the effective Lennard-Jones 6, 12 pair potential parameters for formaldehyde diethyl acetal. Experimental solubilities values are compared with those obtained from the application of the scaled particle theory to gas liquid solubility.     

Plasma etching of III–V semiconductors in BCl3 chemistries: Part I: GaAs and related compounds

BCl₃/Ar discharges provide rapid, smooth pattern transfer in GaAs, AlGaAs, GaP, and GaSb over a wide range of plasma conditions. At high BCl₃-to-Ar ratio there is significant surface roughening on GaSb, which is correlated with the presence of B- and Cl-containing residues detected by Auger electron spectroscopy. BCl₃/N₂ discharges provide similar etch rates to BCl₃/Ar, but when used with photoresist masks lead to rough morphologies on the semiconductor materials due to enhanced dissociation and redeposition of the resist. Etch rates with electron cyclotron resonance discharges are up to two orders of magnitude higher than for rf-only conditions.     

By-product formation in spark breakdown of SF6/O2 mixtures

The yields of SOF₄, SO₂F₂, SOF₂, and SO₂ have been measured as a function of O₂ content in SF₆/O₂ mixtures, following spark discharges. All experiments were made at a spark energy of 8.7 J/spark, a total pressure of 133 kPa, and for O₂ additions of 0, 1, 2, 5, 10, and 20% to SF₆. Even for the case of no added O₂, trace amounts of O₂ and H₂O result in the formation of the above by-products. However, addition of O₂ significantly increases the yields of SOF₄ and SO₂F₂, while SOF₂ is only slightly affected. The net yields for SOF₄ and SO₂F₂ formation range from 0.18×10^–9 and 0.64×10^–10 mol·J^–1, respectively, at 1% O₂ content to 10.45×10^–9 and 7.15×10^–10 mol·J^–1, respectively, at 20% O₂ content. The mechanism for SOF₄ production appears to involve SF₄, an important initial product of SF₆, as a precursor. Comparison of the SOF₄ and SO₂F₂ yield from spark discharges (arc and corona) shows that the yields from other discharges (arc and corona) shows that the yields can vary by at least three orders of magnitude, depending on the type of discharge and on other discharge parameters.     

Studies of GaAs surface roughness and organic masks resistance depending on the ion-beam energy

Summary The development of A^III–B^V semiconductor surfaces exposed to ion-beam irradiation in the ion energy range from 100 to 1000 eV and the ion current density of 1 mA/cm² (max) is investigated. The ion-beam etching with an ion energy of 1 keV results in sharp cones and needles on the semiconductor surface due to the surface contamination and unevenness. Etching with ion-beam energies in the order of 300 eV and with etch rates higher than 1000 /min produces relatively even GaAs surfaces. In case of reactive gases (i.e. CCl₂F₂ and the mixture of CCl₂F₂+Ar) ion-beam etching results in significantly higher etch rates; however, the mask residue contains Cl and F. In studies on the ion-beam resistance of organic masks selectivities as high as 13:1 for the photoresist CM-79 with an ion energy of 180 eV and an ion current density of approximately 0.3 mA/cm² were achieved.     

Sorption and Diffusion of SF6 in Silicalite Crystals

Kinetic and equilibrium data for sorption of SF₆ in silicalite have been determined by the ZLC method. The equilibrium constants and adsorption energy are comparable with the values reported previously for SF₆-NaX. Intracrystalline diffusion is relatively rapid with diffusivities of order 10_–7– 10^–8 cm²·s^–1 at temperatures in the range 30–90°C. The implications for the use of SF₆ as a probe molecule for assessing the integrity of silicalite membranes are considered.     

DC plasma etching of silicon by sulfur hexafluoride. Mass spectrometric study of the discharge products

Polycrystalline silicon wafers were etched in dc discharges of SF₆. SF_x species were extracted from the discharges and measured with a mass spectrometer. A systematic procedure was used to measure the SF _x ⁺ signals such that they are indicators of events in the discharge close to the sample undergoing etching. The picture that emerges is remarkably simple and shows the relative stability of several SF_x species including SF₆, SF₄, SF₂, and SF which are shown to be extracted from the discharge both in the presence and absence of the silicon sample. When silicon is being etched on the cathode of the discharge cell, the only significant additional products are SiF₄ and S₂F₂. A comparison of blank and sample data for opposite substrate polarities shows that there is only a small cation-assisted etching effect and suggests that ions do not play an important role in the etching of silicon by SF₆ discharges.     

Electron scattering and dissociative attachment by SF6 and its electrical-discharge by-products

Discrete electron-molecule processes relevant to SF₆ etching plasmas are examined. Absolute, total scattering cross sections for 0.2–12-eV electrons on SF₆, SO₂, SOF₂, SO₂F₂, SOF₄, and SF₄, as well as cross sections for negative-ion formation by attachment of electrons, have been measured. These are used to calculate dissociative-attachment rate coefficients as a function ofE/N for SF₆ by-products in SF₆.     

Kinetics of Sulfur Oxide, Sulfur Fluoride, and Sulfur Oxyfluoride Anions with Ozone

Rate constants and product branching ratios were measured for eleven sulfur oxide, sulfur fluoride, and sulfur oxyfluoride anions reacting with O₃. The SO^– ₂ ion reacts rapidly to form –O^– ₃, SO^– ₃, and e^–. The temperature dependence of the branching ratio shows more reactive detachment and less SO^– ₃ formation at higher temperature. SO^– ₃ reacts with O₃, forming SO^– ₄ at 1/3 to 1/4 of the collisional rate from 200 to 500 K, respectively. At 300 K, SF^– ₆ charge transfers to O₃ at 20% of the collisional rate. F₂SO^– ₂ reacts with O₃ at a few percent of the collision rate, forming both O^– ₃ and FSO^– ₃; The ion F₃SO^– reacts slowly with O₃ to form F₃SO^– ₂. The ions SO^– ₄, SF^– ₅, FSO^– ₂, FSO^– ₃, F₃SO^–, and F₅SO^– are unreactive with O₃. A trend is noted relating the ion reactivity with the coordination of the central sulfur atom, i.e., the number of S–F bonds plus two times the number of S=O bonds. Only ions with a sulfur coordination of 4 or 6 are reactive, although the reaction rate constants are generally small. The reactivity trends appear to be partially explained by spin conservation. These reactions are all sufficiently slow, so O₃ reactions should not play a major role in SF₆/O₂ discharges. All ions studied have been found to be unreactive with O₂.     

Inductively Coupled Plasma Etching in ICl- and IBr-Based Chemistries. Part I: GaAs, GaSb, and AlGaAs

High-density plasma etching of GaAs, GaSb, and AlGaAs was performed inICl/Ar and IBr/Ar chemistries using an Inductively Coupled Plasma (ICP)source. GaSb and AlGaAs showed maxima in their etch rates for both plamachemistries as a function of interhalogen percentage, while GaAs showedincreased etch rates with plasma composition in both chemistries. Etchrates of all materials increased substantially with increasing rf chuckpower, but rapidly decreased with chamber pressure. Selectivities >10 forGaAs and GaSb over AlGaAs were obtained in both chemistries. The etchedsurfaces of GaAs showed smooth morphology, which were somewhat better withICl/Ar than with IBr/Ar discharge. Auger Electron Spectroscopy analysisrevealed equirate of removal of group III and V components or thecorresponding etch products, maintaining the stoichiometry of the etchedsurface.     

Gas-phase reactions in plasmas of SF6 with O2 in He

Processes which occur in microwave discharges of dilute mixtures of SF₆ and O₂ in He have been examined using a flow reactor sampled by a mass spectrometer. Two classes of experiments were performed. In the first set of experiments, mixtures containing 6×10¹¹ cm^–3 SF₆, 6×10¹⁶ cm^–3 He, and O₂ in the range (0–3.6)×10¹³ cm^–3 were passed through a 20-W 2450-MHz microwave discharge. The gas mixtures arriving at a sample point downstream from the discharge were examined for SF₆, SF₄, SOF₂, SOF₄, SO₂F₂, SO₂, F, and O. In the second class of experiments, rate coefficients were measured for the reactions of SF₄ with O and O₂ and for the reaction of SF with O. The rate coefficient for the reaction of SF with O was found to be (4.2±1.5)×10^–11 cm^–3 s^–1. SF₄ was found to react so slowly with both oxygen atoms and oxygen molecules that only upper limits could be placed on the rate coefficients for these reactions. These values were 2×10^–14 cm³ s^–1 and 5×10^–15 cm³ s^–1 for reactions with O and O₂ respectively. The observed distribution of products from the discharged mixtures is discussed in terms of the measured rate coefficients.     

Mass spectrometer-wall probe diagnostic of Ar discharges containing SF6 and/or O2: Reactive ions in etching plasmas

Positive and negative ions of Ar/SF₆ and Ar/SF₆/O₂ plasmas (etching plasmas) and of Ar/O₂ plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF₆, oxygen was found as the only representative of wall material. At larger amounts of SF₆, silicon could be detected. In cleaning plasmas with small admixtures of O₂ applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation.