Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V₂O₅ target at the laser fluence of 2 J?cm^?2. The substrate temperature and the target-substrate distance were set to 500 ^°C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO₂ is only obtained at an oxygen pressure range of 4×10^?3–2×10^?2 mbar. A higher optical switching contrast was obtained for the VO₂ films deposited at 4×10^?3–10^?2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.     

Surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts

We present the results of a surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts. Films 0.2–0.4 μm in thickness were synthesized in vacuum by means of thermal deposition of the parent substances at a pressure of 5 × 10^?4?1 × 10^?3 Pa and a deposition rate of 3 × 10^?3 μm s^?1 (for NaNd(FOD)₄ films, the deposition rate was 8 × 10^?2 μm s^?1). The microstructure of films depends on the deposition conditions. The films of [NaNd(PTFA)₄] and [NaNd(FOD)₄] complexes and Ln(PTFA)₃ · S₁ adducts have an amorphous structure. The [NaNd(PTFA)₄(Phen)] and Nd(PTFA)₃ · S₂ films are characterized by a more ordered polycrystalline structure with the grain size ranging from 0.2 to 1.5 μm.     

Optical properties of Yb3+ ions in fluorophosphate glasses for 1.0 μm solid-state infrared lasers

Yb³⁺-doped fluorophosphate glasses were prepared by melt-quenching technique and characterized their spectroscopic properties to assess the laser performance parameters. The magnitude of absorption (emission) cross-sections at 975 nm for all the studied Yb³⁺-doped glasses is found to be in the range of 0.29–1.50 × 10^?20 (0.59–1.99 × 10^?20 cm²) which is much higher than those of commercial Kigre QX/Yb: 1.06 × 10^?20 (0.5 × 10^?20 cm²) laser glass. The luminescence lifetimes of ²F_5/2 level decrease (1.15–0.45 ms) with increase in Yb₂O₃ concentration (0.1–4.0 mol%). Effect of OH^? content on luminescence properties of Yb³⁺ ions has also been investigated. The effect of radiative trapping has been discussed by using McCumber (McC) and Fuchtbauer–Ladenburge (F–L) methods. The product of experimental lifetimes and emission cross-sections for 0.1 mol% Yb₂O₃-doped glass is found to be 2.28 × 10^?20 cm² ms which indicates that the higher energy storage and extraction capability could be possible. The detailed spectroscopic results suggest that the studied glasses can be considered for high-power and ultrashort pulse laser applications.     

Linear and nonlinear optical properties of rare earth doped of Ba0.7Sr0.3TiO3 thin films

Ba_0.7Sr_0.3TiO₃:Eu ferroelectric films were deposited on quartz substrates by pulsed laser deposition. The linear absorption coefficient and the linear refractive index calculated from the transmission spectrum at 532 nm were found to be 1.67×10⁴ cm^?1 and 1.82 respectively. The room temperature photoluminescence shows the characteristic emission of Eu³⁺ ions. The nonlinear optical properties of the film were investigated by a single beam Z-scan setup. The negative nonlinear refractive index and two photon absorption coefficient was found to be ?1.508×10^?6 m²/GW and 240 m/GW respectively. The real and imaginary part of the third order susceptibility of the thin films is 2.58×10^?17 m²/V² and 1.16×10^?16 m²/V² respectively. The BST:Eu thin films show good optical limiting property.     

Preparation and some properties of pulsed laser deposited YFeO3 films

YFeO₃ orthoferrite films have been deposited on to quartz and sapphire substrates by pulsed laser deposition. The films crystallize when annealed at temperatures in the range 750 to 900°C. The perpendicular hysteresis loops are rectangular with a maximum coercivity of 9 kOe. The Faraday rotation at 633 nm wavelength is in the range 4–5 × 10³ deg/cm.     

Structural,optical and electrical properties of tin oxide thin films by electrostatic spray deposition

Tin oxide (SnO₂) thin films were deposited by electrostatic spray deposition (ESD). The structural, optical and electrical properties of the films for different solvents were studied. The morphology of the deposited thin films was investigated by scanning electron microscopy. The optical transmission spectra of the films showed 66–75% transmittance in the visible region of spectrum. The electrical resistivity of thin films deposited using the different solvents ranged 1.08 × 10^?3–1.34 × 10^?3 Ω-cm. Overall, EG and PG were good solvents for depositing SnO₂ thin films by the ESD technique with stable cone jet.     

Modified structural,morphological and photoelectrochemical properties of 120 MeV Ag9+ ion irradiated BaTiO3 thin films

The effects of high electronic energy deposition on the structure, surface topography, optical property and photoelectrochemical behavior of barium titanate thin (BaTiO₃) films have been investigated by irradiating films with 120 MeV Ag⁹⁺ ions at different ion fluences in the range of 1 × 10¹¹–3 × 10¹² ions cm^?2. Barium titanate thin films were deposited on indium tin oxide-coated glass substrate by sol–gel spin coating method. The structure of the film was crystalline with tetragonal phase. Surface topography was studied by atomic force microscopy detailing the values of roughness of the films. Maximum photocurrent density of 1.78 mA cm^?2 at 0.4 V/SCE and applied bias photon-to-current efficiency (ABPE) of 0.91% was observed for BaTiO₃ film irradiated at 1 × 10¹¹ ions cm^?2.     

A New Candidate Laser Dye Based 1,4-Bis[β-(2-Naphthothiazolyle)Vinyl]Benzene. Spectroscopic Behavior,Laser Parameters and Excitation Energy Transfer

A new candidate laser dye based 1,4-bis[β-(2-naphthothisolyl) vinyl] benzene (BNTVB) were prepared, and characterized in various organic solvents. The center polarity is less sensitive than electronic absorption. A red shift was noticed in the fluorescence spectra (ca. 40 nm) with increment in the solvent’s polarity, this means that BNTVB’s polarity appreciates upon excitation. The dipole moment of ground state (μ_g) and the excited singlet state dipole moment (μ_e) are determined from Kawski – Chamma and Bakshiev–Viallet equations using the disparity of Stokes shift with solvent polarity function of ε (dielectric constant) and n (refractive index) of the solvent. The result was found to be 0.019D and 5.13D for ground and exited state, in succession. DFT/TD-DFT manners were used to understand the electronic structures and geometric of BNTVB in other solvents. The experimental and theoretical results showed a good agreement. The photochemical quantum yield (Ф_c) of BNTVB was calculated in variable organic reagents such as Dioxane, CHCl₃, EtOH and MeOH at room temperature. The values of φ_c were calculated as 2.3?×?10^?4, 3.3?×?10^?3, 9.7?×?10^?5 and 6.2?×?10^?5 in Dioxane, CHCl₃, EtOH and MeOH, respectively. The dye solutions (2?×?10^?4 M) in DMF, MeOH and EtOH give laser emission in the blue-green region. The green zone is excited by nitrogen pulse 337.1 nm. The tuning range, gain coefficient (α) and cross – section emission (σ_e) of laser were also estimated. Excitation energy transfer from BNTVB to rhodamine-6G (R6G) and N,N-bis(2,6-dimethyphenyl)-3,4:9,10-perylenebis-(dicarboximide) (BDP) was also studied in EtOH to increase the laser emission output from R6G and BDP when excited by nitrogen laser. The dye-transfer power laser system (ETDL) obeys the Foster Power Transmission (FERT) mechanism with a critical transmission distance, R_o of 40 and 32 ? and k_ET equals 2.6?×?10¹³ and 1.06?×?10¹³ M^?1 s^?1 for BNTVB / R6G and BNTVB / BDP pair, respectively.     

Effect of ion velocity on SHI-induced mixing in Ti/Bi system

Energetic ion beams are proving to be versatile tools for modification and depth profiling of materials. The energy and ion species are the deciding factor in the ion-beam-induced materials modification. Among the various parameters such as electronic energy loss, fluence and heat of mixing, velocity of the ions used for irradiation plays an important role in mixing at the interface. The present study is carried out to find the effect of the velocity of swift heavy ions on interface mixing of a Ti/Bi bilayer system. Ti/Bi/C was deposited on Si substrate at room temperature by an electron gun in a high-vacuum deposition system. Carbon layer is deposited on top to avoid oxidation of the samples. Eighty mega electron volts Au ions and 100?MeV Ag ions with same value of S_e for Ti are used for the irradiation of samples at the fluences 1?×?10¹³–1?×?10¹⁴ ions/cm². Different techniques like Rutherford backscattering spectroscopy, atomic force microscopy and grazing incidence X-ray diffraction were used to characterize the pristine and irradiated samples. The mixing effect is explained in the framework of the thermal spike model. It has been found that the mixing rate is higher for low-velocity Au ions in comparison to high-velocity Ag ions. The result could be explained as due to less energy deposition in thermal spike by high-velocity ions.     

Spectroscopy of YAl3(BO3)4:Cr3+ crystals following first principles and crystal field calculations

The CASTEP module of the Materials Studio package was used for calculations of the structural, electronic and optical properties of pure and Cr³⁺-doped YAl₃(BO₃)₄ (YAB). The exchange-correlation effects were treated within the generalized gradient approximation with the Perdew–Burke–Ernzerhof functional. The Monkhorst–Pack scheme k-points grid sampling was set at 3?×?3?×?4 for the Brillouin zone. The plane-wave basis set energy cutoff was set at 340?eV; ultrasoft pseudopotentials were used for all chemical elements. The convergence parameters were as follows: total energy tolerance 1?×?10^?5?eV/atom, maximum force tolerance 0.03?eV/nm, maximal stress component 0.05?GPa and maximal displacement 0.001?Å. The principal absorption peaks of the studied crystal were identified. The influence of 532?nm?cw, 300?mW laser radiation on the observed absorptions was studied.     

Tunable laser Stark-difference spectra of CD3OH

We present Doppler resolution limited spectra of the P(J) and R(J) multiplets for J ≦ 10 of the 10-μm CO stretch band of ¹²CD₃¹⁶OH using a tunable diode laser. Relative frequencies within the multiplets accurate to ±0.0002–0.0005 cm^?1 are obtained, but no absolute frequencies are given. We are able to assign most of the hindered rotation and K substructure in these multiplets. The assignments are based on analyses of Stark-difference spectra combined with the ground-state microwave data and the intensity variations which are expected theoretically. The ground and excited state A, K = 1 asymmetry splitting parameters are measured to be δ₁″ = (8.5450 ± 0.0080) × 10^?3cm^?1 and δ₁′ = (9.7706 ± 0.0080) × 10^?3cm^?1, respectively. The ground-state value agrees well with the microwave results. A rapid-scan system for recording data and a computer-aided technique for calibrating and plotting the spectra are described.     

Microstructural and optical properties of nanocrystalline undoped zirconia thin films prepared by pulsed laser deposition

The zirconium oxide (ZrO₂) thin films are deposited on Si (100) and quartz substrates at various substrate temperatures (room temperature–973 K) at an optimized oxygen partial pressure of 3×10^?2 mbar using pulsed laser deposition technique. The effect of substrate temperature on microstructural, optical and mechanical properties of the films is investigated. The X-ray diffraction studies show that the films deposited at temperatures ≤773 K are monoclinic, while the films deposited at temperatures ≥873 K show both monoclinic and tetragonal phases. Tetragonal phase content increases with the increase of substrate temperatures. The surface morphology and roughness are investigated using atomic force microscope in contact mode. The optical properties of the films show that the refractive indices (at 550 nm) are found to increase from 1.84 to 2.35 as the temperature raises from room temperature (RT) to 973 K. Nanoindentation measurements show that the hardness of the films is 11.8 and 13.7 GPa for the films deposited at 300 and 973 K, respectively.     

Studies of some physical properties of PrFe0.7Ni0.3O3 thin films after 200 MeV Ag15+ irradiation

PrFe_0.7Ni_0.3O₃ thin films (thickness ~ 200 nm) were prepared by pulsed laser ablation technique on LaAlO₃ substrate. These films were irradiated with 200?MeV Ag¹⁵⁺ ions at various fluencies, ranging from 1 × 10¹¹ to 1 × 10¹² ions/cm². These irradiated thin films were characterized by using X-ray diffraction, dc conductivity, dc magnetization and atomic force microscopy. These films exhibit orthorhombic structure and retain it even after irradiations. The crystallite size (110–137?nm), micro strain (1.48 × 10^?2–1.75 × 10^?2 line^?2?m^?4) and dislocation density (79.7 × 10¹⁴–53.2 × 10¹⁴ line/m²) vary with ion fluencies. An enhancement in resistivity at certain fluence and then a decrease in its value (0.22175–0.21813?Ω?cm) are seen. A drastic change in observed magnetism after ion irradiation is seen. With ion irradiation, an increase in surface roughness, due to the formation of hillocks and other factors, is observed. Destruction of magnetic domains after irradiation can also be visualized with magnetic force microscopy and is in close agreement with magnetization data. The impact on various physical properties in these thin films after irradiation indicates a distortion in the lattice structure and consequently on single-particle band width caused by stress-induced defects.     

Swift ion irradiation effect on high-k ZrO2- and Al2O3-based MOS devices

This paper describes the heavy ion-induced effects on the electrical characteristics of reactively sputtered ZrO₂ and Al₂O₃ high-k gate oxides deposited in argon plus nitrogen containing plasma. Radiation-induced degradation of sputtered high-k dielectric ZrO₂/Si and Al₂O₃/Si interface was studied using 45?MeV Li³⁺ ions. The devices were irradiated with Li³⁺ ions at various fluences ranging from 5?×?10⁹ to 5?×?10¹²?ions/cm². Capacitance–voltage and current–voltage characteristics were used for electrical characterization. Shift in flat band voltage towards negative value was observed in devices after exposure to ion radiation. Post-deposition annealing effect on the electrical behavior of high-k/Si interface was also investigated. The annealed devices showed better electrical and reliability characteristics. Different device parameters such as flat band voltage, leakage current, interface defect density and oxide-trapped charge have been extracted.The surface morphology and roughness values for films deposited in nitrogen containing plasma before and after ion radiation are extracted from Atomic Force Microscopy.     

Growth,spectral and laser properties of Nd3+:Na2La4(WO4)7 crystal

A Nd³⁺:Na₂La₄(WO₄)₇ crystal with dimensions of ? 17 × 30 mm³ was grown by the Czochralski method. The thermal expansion coefficients of Nd³⁺:Na₂La₄(WO₄)₇ crystal are 1.32 × 10^?5 K^?1 along c-axis and 1.23 × 10^?5 K^?1 along a-axis, respectively. The spectroscopic characteristics of Nd³⁺:Na₂La₄(WO₄)₇ crystal were investigated. The Judd–Ofelt theory was applied to calculate the spectral parameters. The absorption cross sections at 805 nm are 2.17 × 10^?20 cm² with a full width at half maximum (FWHM) of 15 nm for π-polarization, and 2.29 × 10^?20 cm² with a FWHM of 14 nm for σ-polarization. The emission cross sections are 3.19 × 10^?20 cm² for σ-polarization and 2.67 × 10^?20 cm² for π-polarization at 1,064 nm. The fluorescence quantum efficiency is 67 %. The quasi-cw laser of Nd³⁺:Na₂La₄(WO₄)₇ crystal was performed. The maximum output power is 80 mW. The slope efficiency is 7.12 %. The results suggest Nd³⁺:Na₂La₄(WO₄)₇ crystal as a promising laser crystal fit for laser diode pumping.     

Effect of deposition time on structural and physical properties of Cu<Subscript>2</Subscript>CdSnS<Subscript>4</Subscript> thin films prepared by spray pyrolysis technique: experimental and ab initio study

Cu₂CdSnS₄ (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu₂CdSnS₄ thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu₂CdSnS₄ structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm^?1. The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 10¹ cm² v^?1 s^?1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu₂CdSnS₄ were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.     

Pulsed laser deposition using diffractively shaped excimer-laser beams

Controlling laser-pulse parameters is an important issue in pulsed laser deposition (PLD). In particular, homogenization of laser beams improves the reproducibility of the PLD process by guaranteeing a uniform intensity distribution and a well-defined energy density of the laser spot on the target. We have integrated a beam-homogenization system into our PLD setup, and here we discuss the results and advantages of using such a system. The optical setup is based on diffractive beam-splitter gratings, which produce a 2×2-mm² flat-top distribution with fluences of the order of 3 J/cm² on the target. We demonstrate the applicability of this technique by depositing thin films of ferromagnetic Ni–Mn–Ga shape-memory alloys. Magnetic and structural characterization, including secondary ion mass spectrometry (SIMS), indicate that nearly stoichiometric composition and crystallization in the desired martensitic phase is obtained for films deposited on Al₂O₃ under optimal conditions. In contrast, the formation of silicide compounds at temperatures above 500 ^°C is detrimental in the deposition of Ni–Mn–Ga films directly on silicon.     

Synthesis and characterization of p-GaSe thin films and the analyses of I–V and C–V measurements of p-GaSe/p-Si heterojunction under electron irradiation

Gallium Selenide (GaSe) thin films were grown by the electrochemical deposition (ECD) technique on Indium tin oxide (ITO) and p-Si (100) substrates. The Electron paramagnetic resonance (EPR) spectrum of GaSe thin films’ growth on ITO was recorded at room temperature. According to EPR results, the g value of an EPR signal obtained for GaSe deposited on ITO is 2.0012?±?0.0005. In/GaSe/p-Si heterojunction was irradiated with high-energy (6?MeV) and low-dose (1.53?×?10¹⁰?e^??cm^?2) electrons. The ideality factor of the In/GaSe/p-Si device was calculated as 1.24 and barrier height was determined as 0.82?eV from I–V measurements before irradiation. Acceptor concentration, built-in potential and barrier height of the In/GaSe/p-Si device were also obtained as 0.72?×?10^14?cm^?3, 0.65?eV and 0.97?eV from C–V measurements, respectively. After irradiation, the ideality factor n and barrier height Φ_b values of the In/GaSe/p-Si device were calculated as 1.55 and 0.781?eV, respectively. Acceptor concentration, the built-in potential and barrier height values of the In/GaSe/p-Si device have also shown a decrease after 6?MeV electron irradiation. This change in heterojunction device parameters shows that current transport does not obey thermionic emission, and thus tunneling could be active due to the defects formed by irradiation at the In–GaSe interface.     

Parameters of the cathode spot upon field emission

This work is devoted to studying the parameters of the cathode spot of a vacuum arc. According to calculations under conditions of autoelectronic emission, the temperature of the cathode spot is T _n = (1–2.5) × 10³ K, the electric-field strength is E = (1–6) × 10⁷ V cm^?1, and the current density in the spot is j _n = (0.15–3) × 10⁷ A cm^?2. The values of the cathode-spot parameters for cathodes of different materials are obtained and the type of electron emission is determined.     

Characterization of SiON/InP MOS structure with sulfidation, fluorination, and hydrogenation

Liquid phase deposited SiON film on InP with (NH₄)₂S treatment shows superior electrical characteristics due to the reduction of native oxides and sulfur passivation. Simultaneously, HF in SiON liquid phase deposition solution can effectively reduce residual native oxides on InP and provide fluorine passivation in SiON/InP film and interface. With post-metallization annealing (PMA), hydrogen ions can further passivate defects in SiON/InP film and interface. With these treatments, the PMA-LPD-SiON/(NH₄)₂S-treated InP MOS structure shows excellent electrical characteristics. With the physical thickness of 5.4 nm, the leakage current densities can be as low as 1.25×10^?7 and 6.24×10^?7 A/cm² at ±2 V, and the interface state density is 3.25×10¹¹ cm^?2?eV^?1.