锗、硅、锑化铟和砷化镓的热膨涨——用X射线衍射法测量

本工作是用X射线衍射法测量锗、硅和合金InSb及GaAs在不同温度的点阵常数,观察它们的热膨涨,并求得它们的膨涨系数。     

硅、锗中氧的低温红外吸收

在6—300K下,利用红外傅里叶光谱仪研究了400—4000cm^-1间的硅、锗中氧的红外吸收。采用高分辨条件时,分辨率可达0.5cm^-1。研究了在低温下利用硅的1106cm^-1吸收峰和锗的855cm^-1吸收峰探测硅和锗氧含量的探测限和误差。若样品厚度为2cm,估计在20K下,硅中氧含量探测限～9.6×10¹⁴氧原子·cm^-3,锗中氧含量探测限～3.0×10¹⁴氧原子·cm^-3。同时,对不同生长条件下直拉锗单晶的氧含量进行了研究,并与用锂沉淀法所求得的锗中氧含量加以比较。对不同氧含量的硅样品的1106cm^-1吸收峰在6—300K的变化进行了观察和讨论。 关键词：     

XPS on impregnated cathodes: Surface concentrations and thermal stability

Photoelectron spectra are presented for S, M and scandate cathodes before and after the activation procedure. Using the calculatory method and the Ba deposition method the Ba coverages for the S, M and Sc cathodes have been established as 4.0×10¹⁴, 5.8×10¹⁴ and 5.8×10¹⁴ Ba atoms cm^-2 respectively. On the Os-Ru cathode an enhancement of the Ru concentration is found which may be due to segregation. Further a short investigation was made into the thermal stability of the Ba overlayer and its regeneration. It appears that after a heating cycle to 1200 °C the S and M cathodes recover very well whereas the Sc cathode suffers from the loss of Sc which is inherently connected with the fine emission properties of this cathode.     

Spectroscopic study of thulium-activated double sodium yttrium fluoride Na<Subscript>0.4</Subscript>Y<Subscript>0.6</Subscript>F<Subscript>2.2</Subscript>:Tm<Superscript>3+</Superscript> crystals: I. Intensity of spectra and luminescence kinetics

Na_0.4Y_0.6F_2.2:Tm³⁺ crystals with a thulium content from 1 to 100 at % have been grown by the Stockbarger-Bridgman method. The optical spectra of Na_0.4Y_0.6F_2.2:Tm³⁺ crystals were investigated in detail at room and low (10 K) temperatures, and the luminescence kinetics was analyzed using different excitation methods. The structure of the Stark splitting of thulium levels as “quasi-centers,” characterized by inhomogeneous broadening of the Stark components, is determined from analysis of the absorption spectrum at 10 K. The oscillator strengths of the transitions from the ground state to excited multiplets are determined from the absorption cross-section spectra at 300 K for ten transitions in the range 5000–38 500 cm^?1 and seven transitions in the range 5000–28 500 cm^?1. The transition intensity parameters Ω _t , obtained by the Judd-Ofelt method from the spectra due to the transitions to ten and seven excited levels, were found to be, respectively, (i) Ω₂ = 1.89 × 10^?20, Ω₄ = 2.16 × 10^?20, and Ω₆ = 1.40 × 10^?20 cm² and (ii) Ω₂ = 2.04 × 10^?20, Ω₄ = 2.01 × 10^?20, and Ω₆ = 1.44 × 10^?20 cm². These values of the intensity parameters were used to calculate the radiative transition probabilities and branching ratios and to estimate the multiphonon nonradiative transition probabilities for NYF:Tm. The luminescence decay kinetics from thulium radiative levels upon their selective excitation by nanosecond laser pulses has been studied and the lifetimes of thulium radiative levels in NYF crystals have been found.     

2.0-MeV Er+ implanted in silicon: depth distribution, damage profile and annealing behaviour

Si crystals were implanted with 2.0- MeV Er⁺ at the doses of 5×10¹² ions/cm², 1×10¹⁴ ions/cm², 5×10¹⁴ions/cm², 1×10¹⁵ ions/cm² and 2.5×10¹⁵ ions/cm². Conventional furnace thermal annealing was carried out in the temperature range from 600 °C to 1150 °C. The depth distribution of Er, associated damage profiles and annealing behavioar were investigated using the Rutherford backscattering spectrometry and channelling (RBS/C) technique. A proper convolution program was used to extract the distribution of Er from the experimental RBS spectrum. The obtained distribution parameters, projected range R_p, projected range straggling ΔR_p and skewness SK were compared with those of TRIM96 calculation.The experimental R_p and SK values agree well with the simulated values, while the experimental ΔR_p is larger than TRIM 96 simulated value by a factor of 18%. The damage profile of silicon crystal induced by 2.0-MeV Er⁺ at a dose of 1×10¹⁴ ions/cm² was extracted using the multiple-scattering dechannelling model based on Feldman’s method, which is in a good agreement with the TRIM96 calculation. For the samples with dose of 5×10¹⁴ ions/cm² and more, an abnormal annealing behavioar was found and a qualitative explaination has been given. Received: 11 October 1999 / Accepted: 28 March 2000 / Published online: 5 July 2000     

Thermal and optical properties of Tm<Superscript>3+</Superscript>:NaLa(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> crystal

A Tm³⁺-doped NaLa(WO₄)₂ single crystal with a dimension of Φ20 mm×40 mm was grown by the Czochralski method. Anisotropic thermal expansion coefficients of this crystal were investigated. Polarized absorption spectra, emission spectra and decay curve were recorded at room temperature. The absorption and emission cross-section were presented. Based on the Judd–Ofelt analysis, we obtained the three intensity parameters: Ω₂=10.21×10^-20, Ω₄=2.66×10^-20, and Ω₆=1.46×10^-20 cm². The radiative probabilities, radiative lifetimes, and branch ratios of Tm³⁺:NaLa(WO₄)₂ were calculated, too. Luminescence lifetime of the ³ H ₄ level was measured to be 220 μs. The stimulated emission cross-section for the ³ F ₄→³ H ₆ transition were determined using the reciprocity method, potential laser gain for this transition were also investigated, the gain curves implied that the tunable range is up to 200 nm. PACS 42.70.Hj; 78.20.-e     

Nonlinear optical parameters of colloidal silver at various stages of aggregation

The Z-scan method is used to study the variation in the nonlinear susceptibility χ⁽³⁾ (−gw; ω, ω, −ω) and nonlinear refractive index of colloidal silver with the degree of aggregation under the action of picosecond and nanosecond radiation (λ=1064 nm). The values of χ⁽³⁾ for aggregated silver that are defined by Kerr nonlinearity and thermal self-focusing are found to be −1.5×10⁻¹⁴ and −4.4×10⁻¹¹ esu, respectively. The time evolution of the picosecond pulses passing through the colloid is investigated.     

Isotope effect in the thermal conductivity of germanium single crystals

The thermal conductivity of chemically, structurally, and isotopically highly pure germanium single crystals is investigated experimentally in the temperature range from 2 to 300 K. It is found that the thermal conductivity of germanium enriched to 99.99% ⁷⁰Ge is 8 times higher at the maximum than the thermal conductivity of germanium with the natural isotopic composition. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 6, 463–467 (25 March 1996)     

Rb(62D)原子与基态Rb原子,H2分子碰撞转移截面

本文用荧光法测量Rb(6²D)原子与基态Rb原子,H₂分子碰撞转移截面。结果表明:Rb(6²D)-Rb(5²s)转移截面为σ_fs=67×10^-14cm²,σ_tr=4.3×10^-14cm²,Rb(6²D)—H₂转移截面为σ_fs 关键词：     

Absolute cross sections and kinetic energy release distributions for electron-impact ionization and dissociation of CD<Superscript>+</Superscript><Subscript>4</Subscript>

Absolute cross sections for electron-impact dissociative excitation and ionization of CD⁺ ₄ leading to formation of ionic products (CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺, C⁺, D⁺ ₃, D⁺ ₂, and D⁺) have been measured. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. Around 100 eV, the maximum cross sections are found to be (3.8±0.2) ×10^-19 cm²,  cm², (7.1±0.8) ×10^-17 cm², (9.0±0.8) × 10^-17 cm² and (3.7±0.4) ×10^-17 cm² for the heavy carbonaceous ions CD²⁺ ₄, CD⁺ ₃, CD⁺ ₂, CD⁺ and C⁺ respectively. For the light fragments, D⁺ ₃, D⁺ ₂, and D⁺, the cross sections around the maximum are found to be (5.0±0.6) ×10^-19 cm², (1.7± 0.2) ×10^-17 cm² and (10.6±1.0) ×10^-17 cm², respectively. The cross sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. The analysis of ionic product velocity distributions allows determination of the kinetic energy release distributions which are seen to extend from 0 to 9 eV for heavy fragments, and up to 14 eV for light ones. The comparison of present energy thresholds and kinetic energy release with available published data gives information about states contributing to the observed processes. Individual contributions for dissociative excitation and dissociative ionization are determined for each detected product. A complete database including cross sections and energies is compiled for use in fusion application.     

Thulium doped monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> single crystals: growth and spectroscopy

This paper presents the crystal growth and optical characterization of thulium-doped KLu(WO₄)₂ (KLuW). Thulium-doped KLuW macrodefect-free monoclinic single crystals (a^*×b×c≈10×7×15 mm³) were grown by the top seeded solution growth slow cooling method with dopant concentrations of 0.5%, 1%, 3% and 5% atomic in solution. The evolution of unit cell parameters in relation with thulium doping was studied by X-ray powder patterns. Thulium energy levels in the KLuW host were determined by 6 K polarized optical absorption. The Judd–Ofelt parameters determined were Ω₂=9.01×10^-20 cm², Ω₄=1.36×10^-20 cm² and Ω₆=1.43×10^-20 cm². The maximum emission cross section for the 1.9 μm emission, calculated by Füchtbauer–Ladenburg method, is 1.75×10^-20 cm², at 1845 nm with E//N_m. The intensity decay time from the emitting levels ¹ G ₄ and ³ H ₄ levels in relation to the concentration were studied. For the lowest thulium concentration, the measured decay times from ¹ G ₄ and ³ H ₄ emitting levels are 140 μs and 230 μs, respectively. PACS 42.55.Rz; 78.20.-e; 78.55.-m     

Measurement of the absolute Raman scattering cross sections of sulfur and the standoff Raman detection of a 6‐mm‐thick sulfur specimen at 1500 m

The absolute Raman scattering cross sections (σ_RS) for the 471, 217, and 153 cm⁻¹ modes of sulfur were measured as 6.0 ± 1.2 × 10⁻²⁷, 7.7 ± 1.6 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁶ cm² at 815, 799, and 794 nm, respectively, using a 785‐nm pump laser. The corresponding values of σ_RS at 1120, 1089, and 1081 nm were determined to be 1.5 ± 0.3 × 10⁻²⁷, 1.2 ± 0.24 × 10⁻²⁷, and 1.2 ± 0.24 × 10⁻²⁷ cm² using a 1064‐nm laser. A temperature‐controlled, small‐cavity (2.125 mm diameter) blackbody source was used to calibrate the signal output of the Raman spectrometers for these measurements. Standoff Raman detection of a 6‐mm‐thick sulfur specimen located at 1500 m from the pump laser and the Raman spectrometer was made using a 1.4‐W, CW, 785‐nm pump laser. Copyright © 2010 John Wiley & Sons, Ltd.     

Normal-metal hot-electron bolometer with Andreev reflection from superconductor boundaries

This paper describes the design and experimental testing of a high-sensitivity hot-electron bolometer based a film of normal metal, exploiting the Andreev reflection from superconductor boundaries, and cooled with the help of a superconductor-insulator-normal metal junction. At the measured thermal conductivity, G≈6×10⁻¹² W/K, and a time constant of τ=0.2 μs, and a temperature of 300 mK, the estimated noise-equivalent power NEP=5×10⁻¹⁸ W/Hz^1/2, assuming that temperature fluctuations are the major source of noise. At a temperature of 100 mK, the thermal conductivity drops to G≈7×10⁻¹⁴ W/K, which yields NEP=2×10⁻¹⁹ W/Hz^1/2 at a time constant of τ=5 μs. The microbolometer has been designed to serve as a detector of millimeter and FIR waves in space-based radio telescopes. Zh. éksp. Teor. Fiz. 115, 1085–1092 (March 1999)     

<Superscript>210</Superscript>Pb and <Superscript>210</Superscript>Po levels in sediments,water, and bioindicators in the Cananeia-Iguape estuary-Sao Paulo-Brazil

The purpose of this work was to determine levels of ²¹⁰Pb and ²¹⁰Po in seawater, sediment cores, fish and seafood as well as to estimate the concentration factors and the bioindicators for ²¹⁰Pb and ²¹⁰Po in marine organisms collected in the estuary. ²¹⁰Pb levels in seawater varied from 2.1 to 6.2 mBq.L^?1 and for ²¹⁰Po ranged from 1.6 to 4.1 mBq.L^?1. ²¹⁰Pb concentration factors in fish varied from 0.5×10² to 0.8×10³, in crustaceans from 0.5×10³ to 0.2×10⁴ and in shellfish from 0.2×10⁴ to 0.3×10⁴. ²¹⁰Po concentration factors in fish varied from 0.9×10² to 0.5×10⁴, in crustaceans from 0.5×10⁴ to 0.2×10⁵ and in shellfish from 0.3×10⁵ to 0.9×10⁵. The results obtained to the concentration factors indicated that shellfish and crustaceans are good bioindicators for the radionuclides studies. Some species of fish also accumulated significantly quantities of these radionuclides.     

Absolute cross-sections and kinetic-energy-release distributions for electron-impact ionization and dissociation of CD<Stack><Subscript>3</Subscript><Superscript>+</Superscript></Stack>

Absolute cross-sections have been measured for electron-impact dissociative excitation and ionization of CD₂⁺ leading to formation of CD₂²⁺, CD⁺, C⁺, D₂⁺ and D⁺. The animated crossed-beams method is applied in the energy range from the reaction threshold up to 2.5 keV. The maximum total cross-sections are found to be (1.2±0.1)×10^-17 cm², (6.1±0.7)×10^-17 cm², (6.4±0.7)×10^-17 cm², (26.3±3.8)×10^-19 cm² and (14.9±1.4)×10^-17 cm² for CD₂²⁺, CD⁺, C⁺, D₂⁺ and D⁺ respectively. Individual contributions for dissociative excitation and dissociative ionization are determined for each singly-charged product, which are of significant interest in fusion plasma edge modelling and diagnostics. Conforming to the scheme recently applied in the CD₄⁺ and in the CD₃⁺ articles, the cross-sections are presented in closed analytic forms convenient for implementation in plasma simulation codes. Kinetic-energy-release distributions are determined for each ionic fragment at selected electron energies.     

Study on the defect-related emissions in the light self-ion-implanted Si films by a silicon-on-insulator structure

This paper reports that the Si + self-ion-implantation are conducted on the silicon-on-insulator wafers with the 28 Si + doses of 7×10 12,1×10 13,4×10 13,and 3×10 14 cm 2,respectively.After the suitable annealing,these samples are characterized by using the photoluminescence technique at different recorded temperatures.Plentiful emission peaks are observed in these implanted silicon-on-insulator samples,including the unwonted intense P band which exhibits a great potential in the optoelectronic application.These results indicate that severe transformation of the interstitial clusters can be manipulated by the implanting dose at suitable annealing temperatures.The high critical temperatures for the photoluminescence intensity growth of the two signatures are well discussed based on the thermal ionization model of free exciton.     

The adsorption of carbon monoxide on rhenium: Basal (0001) and stepped 14 (0001) × (101̄1) planes

The influence of surface defects on the adsorption of CO by rhenium is investigated using LEED, AES and linear temperature programmed desorption. On both surfaces, thermal desorption reveals two adsorption states, the lower temperature α state being resolved into two substates, and one β state, all desorbing with first order kinetics. The α state is unaffected by the surface texture, its maximum population being the same on both surfaces, around 4 × 10¹⁴ molecules cm^?2, similar to the value found for poly crystalline rhenium. On the other hand, the β state is strongly dependent on surface structure. On Re(0001) a maximum of 4 × 10¹³ molecules cm^?2 was found, and 2 × 10¹⁴ molecules cm^?2 on the stepped surface. The adsorption is activated and can be increased, by heating to 550 K, to 2 × 10¹⁴ molecules cm^?2 on the basal plane and 3.5 × 10¹⁴ molecules cm^?2 on the stepped surface. Ordered structures are now seen in LEED. Comparison of these results with previous results from polycrystalline rhenium indicate that the dissociation of β-CO on the latter surface must occur at defects other than steps.     

Formation of ultrasmall germanium nanoislands with a high density on an atomically clean surface of silicon oxide

The experimental results of an investigation into the initial stages of growth of a germanium film on an atomically clean oxidized silicon surface are reported. It is shown that the growth of the germanium film in this system occurs through the Volmer-Weber mechanism. Elastically strained nanoislands with a lateral size of less than 10 nm and a density of 2 × 10¹² cm^?2 are formed on the oxidized silicon surface. In germanium films with a thickness greater than 5 monolayers (ML), there also arise completely relaxed germanium nanoislands with a lateral size of up to 200 nm and a density of 1.5 × 10⁹ cm^?2.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.