Effects of intersubband interaction on multisubband electron transport in single and double quantum wells

The multisubband electron transport properties are studied for doped single quantum well and gated double asymmetric quantum well structures. The effects due to intersubband interaction and screening of the ionized impurity scattering are also investigated. We show that intersubband coupling plays an essential role in describing the screening properties as well as the effect of ionized impurity scattering on the mobility in a doped single quantum well. For coupled double quantum well structures, negative transconductance is found theoretically which is due to resonant tunneling between the two quantum wells.     

Influence of the impurity scattering on the absorption of electromagnetic radiation by anisotropic quantum dots

The absorption of electromagnetic radiation by quantum dots is investigated taking into account the processes related to simultaneous scattering from ionized impurities. It is shown that even a single impurity leads to additional resonance peaks. The positions of resonance peaks are determined. The effect of magnetic field on the absorption in dots is studied. The relative intensity of the resonance peaks is analyzed.     

Hybrid impurity resonance in a three-dimensional Anisotropic quantum wire

The absorption of electromagnetic radiation of a three-dimensional quantum wire is theoretically investigated taking into account the processes associated with simultaneous scattering from ionized impurities. The absorption coefficient is studied as a function of the radiation frequency and the magnetic field strength. The shape of the absorption curve is analyzed.     

应变纤锌矿ZnO/Mg_xZn_(1-x)O柱形量子点中离子受主束缚激子的光学性质

在有效质量近似下,考虑内建电场效应,采用变分法详细研究了受限于纤锌矿Mg_xZn_(1-x)O/ZnO/Mg_xZn_(1-x)O圆柱形应变量子点中离子受主束缚激子(A~-,X)的带间光跃迁吸收系数随量子点尺寸、Mg含量和离子受主杂质中心位置的变化情况,并和离子施主束缚激子(D~+,X)及自由激子进行了比较.结果表明:随着量子点尺寸的减小,(A~-,X)的光跃迁吸收强度增强,吸收曲线向高能方向移动,出现蓝移现象.随着Mg含量增加,(A~-,X)的光跃迁吸收曲线蓝移,且吸收强度减弱.随着离子受主杂质从量子点的左界面沿材料生长方向移至量子点的右界面,光跃迁吸收曲线向低能方向移动,出现红移现象.此外,与离子施主束缚激子(D~+,X)相比,随着沿材料生长方向掺入杂质位置的变化,光跃迁吸收曲线移动的方向相反.但不管是掺入离子受主杂质还是离子施主杂质,当离子杂质从量子点的左异质界面沿材料生长方向移至右异质界面时,光跃迁吸收峰的移动量大致相同.     

Low temperature electron mobility in Ga0.5In0.5P/GaAs quantum well structures

We analyse the low temperature subband electron mobility in a Ga_0.5In_0.5P/GaAs quantum well structure where the side barriers are delta-doped with layers of Si. The electrons are transferred from both the sides into the well forming two dimensional electron gas (2DEG). We consider the interface roughness scattering in addition to ionised impurity scattering. The effect of screening of the scattering potentials by 2DEG on the electron mobility is analysed by changing well width. Although the ionized impurity scattering is a dominant mechanism, for small well width the interface roughness scattering happens to be appreciable. Our analysis can be utilized for low temperature device applications.      

In0.53Ga0.47As/In0.52Al0.48As量子阱中双子带占据的二维电子气的输运特性

研究了不同沟道厚度的In_0.53Ga_0.47As/In_0.52Al_0.48As量子阱中双子带占据的二维电子气的输运特性.在考虑了两个子带电子之间的磁致子带间散射效应后,通过分析Shubnikov-de Haas振荡一阶微分的快速傅里叶变换结果,获得了每个子带电子的浓度、输运散射时间、量子散射时间以及子带之间的散射时间.结果表明,对于所研究的样品,第一子带电子受到的小角散射更强,这与第一子带电子受到了更强的电离杂质散射有 关键词： 二维电子气 散射时间 自洽计算     

Resonant absorption of electromagnetic radiation in a quantum channel due to the scattering of electrons by impurities

We have found an analytical expression for the absorption coefficient of electromagnetic radiation in a quantum channel with a parabolic confinement potential. The calculation has been performed using the second-order perturbation theory taking into account the scattering of a quasi-one-dimensional electron gas by ionized impurities. We have analyzed the dependences of the absorption coefficient on the frequency of the electromagnetic radiation and the magnetic field. The appearance of additional resonant peaks, which are caused by scattering by impurities, has been found.     

Impurity optical absorption in parabolic quantum well

Optical absorption in GaAs parabolic quantum well in the presence of hydrogenic impurity is considered. The absorption coefficient associated with the transitions between the upper valence subband and donor ground state is calculated. The impurity ground state wave function and energy are obtained using the variational method. Dependence of the absorption spectra on impurity position in quantum well was investigated. It is shown, that along with quantum well width decrease the absorption threshold shifts to higher frequencies. Results obtained within frames of parabolic approximation are compared with results for rectangular infinite-barrier quantum well case. The acceptor state → conduction band transitions considered as well.     

Magnetoelectronic transport of the two-dimensional electron gas in CdSe single quantum wells

Hall mobility and magnetoresistance coefficient for the two-dimensional (2D) electron transport parallel to the heterojunction interfaces in a single quantum well of CdSe are calculated with a numerical iterative technique in the framework of Fermi-Dirac statistics. Lattice scatterings due to polar-mode longitudinal optic (LO) phonons, and acoustic phonons via deformation potential and piezoelectric couplings, are considered together with background and remote ionized impurity interactions. The parallel mode of piezoelectric scattering is found to contribute more than the perpendicular mode. We observe that the Hall mobility decreases with increasing temperature but increases with increasing channel width. The magnetoresistance coefficient is found to decrease with increasing temperature and increase with increasing magnetic field in the classical region.      

Impurity absorption of light in structures with quantum dots

The impurity absorption of light in a quantum dot with a parabolic potential profile is considered within the framework of the model of a zero radius potential in the effective mass approximation. The sensitivity of the effect of position disorder to the size factor at the transition from a quantum well to a quantum dot is revealed. The spectral dependence of the coefficient of impurity absorption of light is investigated with account of the spread in size of quantum dots. It is shown that the account of spread in size results in smearing of discrete absorption lines. The impurity absorption edge depends on the parameters of quantum dots and the depth of the impurity level.     

Effect of ionized impurities on electron tunneling in GaAs/AlGaAs triple quantum wells

Photoluminescence and electroreflectance measurements in Si δ-doped GaAs/Al_0.35Ga_0.65-A triple quantum wells are performed in order to study the effect of ionized impurities on electron tunneling. It is theoretically shown that a thin quantum well with a δ-doping layer inserted between narrow and wide quantum wells of asymmetric double quantum wells enhances impurity scattering rate significantly. Photoluminescence decay time is found to decrease 30% at maximum compared with a sample without a δ-doping layer.     

Reduction in relaxation time due to ionized impurities in GaAs/AlGaAs quantum well structures

Time-resolved photoluminescence measurements in δ -doped GaAs/AlGaAs on the quantum well structures are performed to study effects of ionized impurities relaxation process of photoexcited carriers. It is theoretically shown that a thin quantum well with a δ -doping layer inserted in the barrier layer of double quantum wells enhances the impurity scattering rate significantly. Photoluminescence decay time in the δ -doped samples is found to decrease compared with the undoped samples.     

Evaluation of some transport coefficients for degenerated semiconductors

In this work the evaluation of the most important transport coefficients (mobility, thermopower, Hall coefficient factor, Lorentz number, magnetoresistance, constant of transversal Nernst-Ettingshausen effect) in the case of combined scattering is presented for strongly degenerated semiconductors. Some relations also were found for the exponent of the energy dependence on relaxation time for polar scattering in case of mobility, Hall coefficient factor and thermopower. By means of Bethe-Sommerfeld series mean values for the two most frequent cases of combined scattering were determined, those for the acoustical mode and ionized impurity scattering and the longitudinal optical mode and ionized impurity scattering.We would like to thank professor E. Klier for some valuable reminders for which we are obliged to him.     

Light Absorption by Impurity Structures with Quantum Points in an External Magnetic Field

The light absorption by the quantum point - impurity center complex in an external quantizing magnetic field is studied in the effective mass approximation for the model of zero-radius potential. An expression for the absorption coefficient of light having longitudinal polarization by an impurity is derived when the influence of the magnetic field on the ground state of the impurity at the quantum point can be neglected. It is demonstrated that the edge of the absorption band of the impurity is shifted toward shorter wavelengths with increasing magnetic field strength. In this case, the absorption coefficient increases several times, which is interpreted as the effect of magnetic freezing-in of the ground state of the quantum point.     

Free carrier absorption in n-type CdTe

Experimental results for free carrier absorption at room temperature in lightly doped samples of n-type CdTe, including the λ³ dependence of the absorption coefficient on the photon wavelength, can be satisfactorily accounted for in terms of polar optical mode scattering with a very small contribution by impurity scattering. Use is made of the quantum theory of free carrier absorption initially developed for direct gap III–V semiconducting compounds, which utilizes the Kane band structure and includes nonparabolicity, arbitrary spin-orbit splitting values, overlap wave function factors, and intermediate states in other bands.     

Cyclotron resonance study of conduction electrons in n-type indium antimonide under a strong magnetic field—I: Thermal equilibrium case

The far IR cyclotron resonance of conduction electrons is investigated in n-type indium antimonide in the quantum regimes, ?ω_ck_BT and ?ω_c?k_BT. The resonance peak position, half width, and the degree asymmetry in the line shape are studied as a function of temperature. In analyzing the experimental data, the three band model has been employed together with modern theoretical results of electron scattering by ionized impurities in the presence of a strong magnetic field. It is found that, for example for an experiment at 84 μm, the Une width depends very little on temperature between 4.2 and 45 K where the ionized impurity scattering is dominant, and increases rapidly with temperature above 45 K where the onset of phonon scattering is expected. Further details of the ionized impurity scattering were investigated by using three different laser wavelengths 84, 119 and 172μm. The line width at the phonon-limited temperature region depends very little on magnetic field and sample. The temperature dependence of the band gap was also determined by analysis of the resonance peak shift.     

Predominant ionized impurity scattering of warm carriers in semiconductors

At large carrier concentrations and about equally large impurity concentrations in nondegenerate semiconductors, a Maxwell-Boltzmann distribution may be used for the calculation of the warm-carrier coefficient β. Acoustic and optical deformation potential scattering, piezoelectric, and polar optical mode scattering are considered as mechanisms of energy transfer from the carriers to the lattice. In all cases of predominant ionized impurity scattering β is positive, proportional to the product of mobilities with and without impurity scattering, which includes an inverse proportionality to the impurity concentration, and inversely proportional to the square of a velocity. For acoustic scattering this velocity is the sound velocity while for optical mode scattering it is essentially the constant drift velocity of carriers at high field intensities. Since the treatment is based on the simple model of band structure no anisotropy of β or carrier transfer effects are obtained.     

Features of the fine structure of the fundamental absorption edge in low-doped semiconductor quantum wells with allowance for the Coulomb gap

Influence of the Coulomb gap on the fine structure of the fundamental absorption edge in quantum wells is studied. Using the interpolation formula, which adequately describes the effect of the Coulomb gap in quantum wells under conditions of low doping regardless of the compensation degree, an explicit expression is obtained for the absorption coefficient related to transitions from the valence level of size quantization to the impurity band. The dependence of the absorption coefficient of a quantum well on the levels of doping and compensation is also studied.     

Free-carrier absorption in quantum well structures for acoustic phonon scattering

Free-carrier absorption has been studied for quantum well structures fabricated from III-V semiconducting materials where the acoustic phonon scattering is important. The energy band of carriers is assumed to be nonparabolic. We discuss the effect of acoustic phonon scattering on the free-carrier absorption for both deformation-potential coupling and piezoelectric coupling. It is found that the free-carrier absorption coefficient depends upon the polarization of the electromagnetic radiation relative to the layer plane or quantum well, the photon frequency, and the temperature. When the deformation-potential coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane or perpendicular to the layer plane. However, when the piezoelectric coupling is dominant, the free-carrier absorption coefficient increases with increasing temperature for photons polarized in the layer plane, but for photons polarized perpendicularly to the layer plane, the free-carrier absorption coefficient decreases with increasing temperature. Moreover, at high temperatures such as T = 300 K, the free-carrier absorption coefficient oscillates with the film thickness in a small quantum well region and then decreases monotonically with increasing the film thickness. This is different from the result for three-dimensional semiconducting solids.     

Hall mobility of degenerate semiconductors

The dependence ofHall mobility of carriers on impurity content has been theoretically investigated for degenerate semiconductors, taking scattering by lattice vibrations as well as ionized impurities into account. The scattering due to optical modes of lattice vibrations has been neglected, for the sake of simplicity of calculations. This omission is not serious at temperatures, when the impurity scattering is important.