首页 | 本学科首页   官方微博 | 高级检索  
相似文献
 共查询到20条相似文献,搜索用时 46 毫秒
1.
Equations for calculating track parameters have been proposed, which invariably involve the track etch rate Vt and the bulk etch rate Vb. The present study measured Vb for the LR115 solid-state nuclear track detector using atomic force microscopy (AFM). The detectors were partially masked using rubber cement and then etched in 2.5 N NaOH solution at 60°C for time periods ranging from 5 to 40 min. The rubber cement was then peeled off and cross-sectional images of the LR115 detectors were obtained by AFM. Vb has been found to have different values below and beyond the etching time of about 13.5 min, with the values of 0.0555 and 0.0875 μm min−1, respectively. The increase in Vb with the etching time can be explained by a diffusion-etch model, in which the additional damage of the detector material is due to those etchant ions diffused into the detector over time. Now that Vb has been determined, this can be combined with the track etch rate Vt to calculate track parameters.  相似文献   

2.
It is well established that the bulk etch rates for solid state nuclear track detectors are affected by the concentration and the temperature of the etchant. Recently, we found that the bulk etch rate for the LR 115 detector to be affected by stirring during etching. In the present work, the effects of stirring on the bulk etch rate of the CR-39 detector is investigated. One set of sample was etched under continuous stirring by a magnetic stirrer at 70°C in a 6.25 N NaOH solution, while the other set of samples was etched without the magnetic stirrer. After etching, the bulk etch thickness was measured using Form Talysurf PGI (Taylor Hobson, Leicester, England). It was found that magnetic stirring did not affect the bulk etch of the CR-39 detector, which was in contrast to the results for the LR 115 detector.  相似文献   

3.
The etching conditions of an indigenously prepared thin film of pentaerythritol tetrakis(allyl carbonate) (PETAC) were standardised for the use as a nuclear track detector. The optimum etching times in 6?N NaOH at 70°C for the appearance of fission and alpha tracks recorded in this detector from a 252Cf solid source were found to be 30 min and 1.50?h, respectively. The experimentally determined values for the bulk and track-etch rates for this detector in 6?N NaOH at 70°C were found to be 1.7?±?0.1 and 88.4?±?10.7?µm/h, respectively. From these results, the important track etching properties such as the critical angle of etching, the sensitivity and the fission track registration efficiency were calculated and compared with the commercially available detectors. The activation energy value for bulk etching calculated by applying Arrhenius equation to the bulk etch rates of the detector determined at different etching temperatures was found to be 0.86?±?0.02?eV. This compares very well with the value of about 1.0?eV reported for most commonly used track detectors. The effects of gamma irradiation on this new detector in the dose range of 200–1000?kGy have also been studied using bulk etch rate technique. The activation energy values for bulk etching calculated from bulk etch rates measurements at different temperatures were found to decrease with the increase in gamma dose indicating scission of the detector due to gamma irradiation. The optical band gap of this detector was also determined using UV–visible spectrometry and the value was found to be 4.37?±?0.05?eV.  相似文献   

4.
Computation of etched track profiles needs the knowledge of the variable track etch rates along the ion trajectories. Using the depth-dependent track etch rates experimentally determined for perpendicularly incident protons, deuterons and alpha particles as well as 7Li, 11B, 12C, 14N and 16O ions of different energies simulations of the track development were performed. Two models of track etching were applied for that purpose recently published in literature. Although the models are based on the same physical fundamentals the results are slightly different. The reasons of the discrepancies were found by analysing the algorithms in detail. Comparison of the calculated track profiles with those determined experimentally from longitudinal sections of the etch pits showed good agreement for non-overetched as well as overetched tracks. The consistency of the whole experimental data set was checked by analysing the correlation of the track etch rates with geometric track parameters for all kinds of ions and etching times covered by the experiments.  相似文献   

5.
To analyze the micro-track structure of heavy ions in a polymer material,parameters including bulk etch rate,track etch rate,etch rate ratio,and track core size were measured.The pieces of CR-39 were exposed to 100 MeV Si ions with normal incidence and were etched in 6.25N NaOH solution at 70 C.Bulk etch rate was read out by a profilemeter after several hours of etching.The other parameters were obtained by using an atomic force microscope(AFM)after a short time of etching.We have measured the second etch pits and minute etch pits to obtain the track growth curve and three dimension track structures to track the core size and etch rate measurements.The local dose of the track core was calculated by theδ-ray theory.In our study,we figure out that the bulk etch rate Vb=(1.58±0.022)μm/h,the track etch rate Vt=(2.90±0.529)μm/h,the etch rate ratio V=1.84±0.031,and the track core radii r≈4.65 nm.In the meantime,we find that the micro-track development violates the traditional track-growth model.For this reason,a scenario is carried out to provide an explanation.  相似文献   

6.
R K Jain  S K Bose  K K Dwivedi 《Pramana》1991,37(5):431-436
Triafol-TN plastic detector foils have been irradiated with238U ions of energy 16.34 MeV/u and the tracks produced have been observed using the chemical etching technique. The bulk etch rate and track etch rate are determined under successive chemical etching. In our case, the validity of Arrhenius’s law is confirmed by the fact that the same value ofE a obtained for these different concentrations, within experimental errors. The results show a linear correlation between the measured track etch rate along the track and the corresponding total energy loss rate and a threshold value of ~ 5.0 MeV/(mg/cm2) for track registration was obtained. The maximum etched track length of238U-ion in triafol-TN has been compared with the theoretically computed range.  相似文献   

7.
S M Farid 《Pramana》1986,26(5):419-425
The track etch rates of 10 20 Ne-ion in cellulose nitrate (LR-115) have been measured for different temperatures and the activation energy is determined. The experimental results show that both the track etch rate and the normalized track etch rate depend on the energy loss as well as on etching temperature. The maximum etched track length of 10 20 Ne-ion agrees with the theoretically computed range. The experimental results show that there is no sharp threshold, at least in CN(LR-115).  相似文献   

8.
Sample of cellulose nitrate (Russian) is exposed to 18 40 Ar ions. The bulk etch rate has been studied at different etching temperatures and the activation energy for bulk etch rate has been calculated. The etched track lengths are measured for different etching times. The energy loss rate and range of 18 40 Ar ions in CN(R) is also calculated. The critical threshold value for etchable track in CN(R) is determined by comparing the theoretical and experimental values of track length. The response curve of CN(R) is also presented.  相似文献   

9.
The bulk etch rate for two types of CR-39 detector was measured as a function of temperature and the activation energies of bulk etching was determined. Experimental values of track etch rate were derived directly from the function of the succesive measured track length vrs. etching time for 209Bi, 129Xe and 20Ne ions.

The maximum etchable length of 13 MeV/u 209Bi and 13.04 MeV/u 129Xe ions have been measured at and below these energies. A comparison of the measured and calculated track length data is presented.  相似文献   


10.
At the beginning of the etching process a constant track etch rate can be assumed. In deeper detector layers, however, the etch rate varies drastically along the particle trajectories. Consequently, the indirect determination of the track etch rate by measuring the etch pit diameters on the detector surface does not yield correct results. Therefore, a method for the direct measurement of the track etch rate as a function of the depth within the detector was developed. Applying this method, the relationship between the track etch rate and the energy loss in CR-39/PATRAS could be derived.  相似文献   

11.
The effect of the properties of PADC nuclear track detectors after exposure to high doses of gamma absorbed doses up to 5×105 Gray (50 Mrad) were studied. The gamma source was a 9.03 PBq (244 KCi), Co-60 source. Results indicate that each of the bulk etch rate (Vb), the tracks etch rate (Vt) and the sensitivity (V) of the detectors increases with the high gamma absorbed dose, but there is a drop in these parameters at the low gamma absorbed dose. Signs of surface roughness were observed by increasing the gamma absorbed doses and changes in color observed for doses larger than 2×105 Gray. The temperature of detectors during irradiation time reached 41°C. The fission fragment tracks (from Cf-252 source) disappeared quickly within the etching time (minutes) for total absorbed doses greater than 3×105 Gray due to their high bulk etch rate.  相似文献   

12.
For the last few years, the Besançon and Dresden teams have been working in a parallel way on light ion (protons and alphas) registration characteristics for the CR-39 SSNTD. Even if the two groups use different approaches, the main part of both investigations concerns the study of the track etch rate (VT) and the consequences of the obtained results, which have provided us with greater understanding of detection limits.

After recalling the methods used to determine the VT from both teams, will show how fundamental datal related to the registration properties of the CR-39 detector can be extracted. Indeed, the knowledge of an analytical relation for the VT enables the relationship between this velocity and the primary deposited energy to the examined with respect to the same spatial variable (the instantaneous depth of penetration (x) of the incoming particle). According to experimental uncertainties, the Bragg peak of the primary ionization coincides within a very close range with the maximum of the VT. Moreover, if increasing the etching parameters (C, T) increases the maximum VT value, these changes do not affect its position with respect to the instantaneous depth of penetration.

Taking into account the reduced etch rate, the Dresden team found that both protons and alphas exhibit the same behavior when this rate is plotted versus the primary energy deposition rate. As a consequence, the corresponding reduced etch rate is always identical no matter what type of particle deposits a given amount of energy (e.g. proton or alpha). The Besançon team has corroborated the results obtained by the Dresden group for alphas and have extended the study to various etching conditions. From these results, the sensitivity of the CR-39 SSNTD is obtained in terms of critical LET and leads to a very low energy threshold for alpha particles. We will see throughout this paper that the lower threshold does not seem to depend on the etching parameters.  相似文献   


13.
An extensive study of alpha particle track profile has been carried out in PADC plastic detectors. Track profile geometry and its parameters have been studied. Various values of alpha energies were used, and the etch rate ratio (V) was measured as a function of the residual range (RR) along the alpha particle track. A mathematical formula between V and RR was established. Also in this work, alpha particle ranges in plastic foils have been measured at various energies using two methods; namely the track profile technique (TPT) and the over etched track diameter method. A comparison between the measured ranges and calculated ones is presented, and a good agreement has been found.  相似文献   

14.
Solid state nuclear track detectors are commonly used for measurements of concentrations of radon gas and/or radon progeny. All these measurements depend critically on the thickness of the removed layer during etching. However, the thickness of removed layer calculated using the etching period does not necessarily provide a sufficiently accurate measure of the thickness. For example, the bulk etch rate depends on the strength of stirring during etching for the LR 115 detector. We propose here to measure the thickness of the removed layer by using energy-dispersive X-ray fluorescence spectrometry. In the present work, a reference silver nitrate pellet is placed beneath the LR 115 detector, and the fluorescence X-ray intensity for silver is then measured. We have found a linear relationship between the X-ray intensity and the thickness of the removed layer for LR 115 detector. This provides a fast method to measure the thickness of removed layer from etching of LR 115 detector. However, this method was found to be inapplicable for the CR-39 detector. Therefore, alternative methods have yet to be explored for the CR-39 detector.  相似文献   

15.
In this work, we have studied the effect of the radiation damage caused by the incident particles on the activation energy of etching for CR-39 samples. The damage produced by the incident particle is expressed in terms of the linear energy transfer (LET). CR-39 samples from American Acrylic were irradiated to three different LET particles. These are N (LET200 = 20 KeV/μm) as a light particle, Fe (LET200 = 110 KeV/μm) as a medium particle and fission fragments (ff) from a 252Cf source as heavy particles. In general the bulk etch rate was calculated using the weight difference method and the track etch rate was determined using the track geometry at various temperatures (50–90 °C) and concentrations (4–9 N) of the NaOH etchant. The average activation energy Fb related to the bulk etch rate vb was calculated from ln vb vs. l/T. The average activation energy Et related to the track etch rate vt was estimated from ln vt vs. l/T. It is shown that activation energy of etching is a constant value for CR-39 detector where Et was found to be independent on the damage produced by the incident particle.  相似文献   

16.
As a frame work of the study for the latent track size measurement using atomic force microscope, we have measured the minute etch pits and the extremely small amount of bulk etch of CR-39 at the beginning of chemical etching, and obtained its growth curves in nanometer dimensions. The pieces of CR-39 were exposed to 6 MeV/nC and Fe ions with normal incidence angle and were etched in 70°C 7 N NaOH solution for 0.5,1,2,3,5 min. The diameters of latent track were estimated to be 17 nm for Fe ions and 8 nm for C ions, respectively. These values are comparable to the experimental data on the average ‘track core diameters’ that have been obtained by various experimental techniques.  相似文献   

17.
The effects of Co-60 gamma-rays and about 25-MeV pulsed electrons have been investigated on CR-39 plastic nuclear track detector. The bulk etch rate was measured as a function of the absorbed dose under three different irradiation conditions; gamma-ray exposure in air at the dose rate of 6 kGy/h, that in vacuum and electron shower in air at 126 kGy/h on average. It was found that the bulk etch rate (V) increased nearly exponentially with the dose (D); V=V0exp(kD), and the characteristic parameter (k) was 35, 9 and 12 MGy−1, respectively. It is considered that a lack of oxygen in damage formation processes could occur momentarily during a short electron pulse, just similarly to the vacuum effect of reduction in track etch rates in outgassed CR-39 plastic.  相似文献   

18.
S M Farid 《Pramana》1984,23(2):187-198
Measurements of the dependence of track etch rate on the energy-loss of different ions have been presented. In this method, 18 40 Ar, 10 22 Ne, 8 16 O and 6 12 C-ions of different energies are used as energetic heavy ions for track formation in the detectors. The bulk etch rate and track etch rate are measured for different temperatures and hence the activation energies are determined. The variation ofV =V t /V b along the trajectory of the track has been shown for different temperatures. The maximum etched track length is compared with the theoretical range as well as with the range reported earlier. The experimental results indicate the absence of a well-defined threshold in the plastics studied.  相似文献   

19.
S M Farid 《Pramana》1985,24(3):475-484
Samples of Lexan and Makrofol-E polycarbonate plastic track detectors were exposed to 1·1 MeV/N 54 132 Xe-ions to investigate the thermal track fading properties of these plastics. The experimental results show that there is no effect of annealing on the bulk etch rate while the track etch rate decreases with annealing. The track diameter decreases with increase in annealing time and temperature. It is also observed that the track density is reduced as a result of annealing. The experiments reveal that the track lengths are, in general, decreased by the application of heat and that the oblique tracks are less stable than the vertical tracks. The decrease in diameter of 54 132 Xe-ion tracks in Makrofol-E due to heat treatment is faster than that of 54 132 Xe-ion tracks in Lexan.  相似文献   

20.
We report the chemical etching behaviour of the CR-39 polymer detector exposed to fission fragments of 252Cf describing etchability of latent tracks, which are like nanocylinders. The fission fragment exposed detectors were etched in 1-7 N NaOH water solutions at temperatures 50-80℃ for 45 min in the case of track length and 180 min in the case of track diameter measurements. The reduced etch rate S (called here etchability) is determined using experimental results for all etching conditions and the etching conditions with the highest reduced etch are obtained. Physics and energetics of bulk and track etching are discussed. Possible effects causing spurious changes in determination of activation energy of etching are investigated.  相似文献   

设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号