Impact ionization induced negative far-infrared photoconductivity inn-GaAs

Far-infrared photoconductivity ofn-GaAs epitaxial layers showing impact ionization breakdown has been investigated by molecular lasers at photon energies below the 1s-2p shallow donor transition energy. Negative photoconductivity was observed if a magnetic field was applied to the crystals and if impact ionization of donors by the electric bias field was the dominant electron excitation mechanism. The experimental results are qualitatively explained on the basis of the generation-recombination kinetics of electrons bound to donors. Negative photoconductivity is attributed to optically induced free to bound transitions of electrons from theN=0 Landau band to donor levels shifted by the magnetic field above the low energy edge of the conduction band.     

Die magnetische struktur der NiAs-phase des systems (Cr1-xFex)1+Sb im bereich positiver austauschkopplung

A linear dependence of the reciprocal susceptibility on the temperature similar to a Curie-Weiss-law with positive values of the paramagnetic Curie temperature θ_p was found for the (Cr_1-xFe_x)₁₊Sb ternary system in an intermediate range of x between the antiferromagnetic end members (x = 0 and 1). A magnetization appears below θ_p with temperature and external field dependences, for fields below a critical applied field, which are unusual for ferromagnetic substances. A remanence is found only far below θ_p. In this temperature range the magnetization depends on the time elapsed after changing the applied field and on the magnetic as well as on the thermal history. These phenomena are investigated and an interpretation of the observed behavior is discussed using the model of the magnetic structure for mictomagnets.     

Intraband transitions in magnetoexcitons in coupled double quantum wells

A theory of far-infrared (FIR) magneto-optical intraband s→p ^± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained In_xGa_1−x As/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ground s and excited p ^± states in a quantizing magnetic field B>2 T and electric field ℰ perpendicular to the quantum well plane have been studied. The regimes of direct (in a weak electric field) and indirect (in a strong electric field) transitions, and the transition between the direct and indirect regimes, have been investigated. Zh. éksp. Teor. Fiz. 113, 1446–1459 (April 1998)     

Far-infrared pump-probe measurement of the lifetime of the 2p?1 shallow donor level in n-GaAs

The low temperature lifetime of electrons excited in the 2p^–1 donor level of n-GaAs has been studied in a far-infrared pump-probe experiment. The measurement has been carried out using a pulsed far-infrared molecular gas laser working at a wavelength of 292µm, with the sample in a magnetic field of 5.1 T, resonant with the 1s_o–2p^–1 transition. Two FIR pulses are sliced from one FIR-laser pulse by means of optical switching techniques using two Q-switched Nd:YAG lasers. The first pulse is used to saturate the transition, while the second pulse probes the return of the population in the excited state towards thermal equilibrium as a function of the time delay after the excitation pulse. The value of 350±50 ns found for the lifetime falls in line with CW saturation results on materials with other doping concentrations.     

Postcollision interaction upon electron excitation of 4sns1S0, 3S1 and 4snd1D2, 3DJ levels of zinc atom

The optical excitation functions (OEFs) for four series of spectral lines of the Zn atom at the transitions 4sn ₁ s ¹ S ₀ → 4s4p ¹ P ₁^∘ (n ₁ = 6–10), 4sn ₂ s ³ S ₁ → 4s4p ³ P ₂^∘ (n ₂ = 6−8), 4sn ₃ d ¹ D ₂ → 4s4p ¹ P ₁^∘ (n ₃ = 4−6), 4sn ₄ d ³ D _{1, 2, 3} → 4s4p ³ P ₂^∘ (n ₄ = 4−7) excited by a monoenergetic (0.04–0.08 eV) electron beam with energies from the excitation threshold to 18–19 eV are measured. In the energy dependences of the excitation cross sections, the effect of post-collision interaction of slow (scattered) and fast (emitted after the autoionization state decay) electrons is observed and described. This interaction leads to the capture of a slow electron into the listed discrete levels and the appearance of maxima in the excitation functions. The energies of the maxima are used to determine the energies and widths of single autoionization states or their groups by approximate formulas of the classical approach. The autoionization levels of the zinc atom responsible for the maxima observed are determined. Possible transfer of the orbital angular momentum between electrons is analyzed.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

Phonon-assisted intersubband transitions in wurtzite GaN/InxGa1-xN quantum wells

A detailed numerical calculation on the phonon-assisted intersubband transition rates of electrons in wurtzite GaN/In_xGa_1-xN quantum wells is presented. The quantum-confined Stark effect induced by the built-in electric field and the ternary mixed crystal effect are considered. The electron states are obtained by iteratively solving the coupled Schrödinger and Poisson equations and the dispersion property of each type of phonon modes is considered in the derivation of Fermi's golden rule to evaluate the transition rates. It is indicated that the interface and half-space phonon scattering play an important role in the process of 1-2 radiative transition. The transition rate is also greatly reduced by the built-in electric field. The present work can be helpful for the structural design and simulation of new semiconductor lasers.     

Far-infrared s→p ± interexciton transitions in InGaAs/GaAs coupled double quantum wells

We consider s→p ^± interexciton far-infrared (FIR) magnetooptical transitions in coupled double quantum wells (DQWs). Spatially direct (intrawell) and indirect (interwell) excitons in strained In_xGa_1−x As/GaAs symmetric DQWs with a simple valence band are considered. The evolution of the transition energies and oscillator strengths as functions of the transverse magnetic field B in different regimes is studied: we consider the direct regime (zero and low transverse electric field ℰ), the indirect regime (high ℰ), and the indirect-direct crossover (induced by increasing B at intermediate ℰ). Pis’ma Zh. éksp. Teor. Fiz. 64, No. 3, 198–202 (10 August 1996) Published in English in the original Russian journal. Edited by Steve Torstveit.     

The polaron effect on the binding energy of a shallow donor impurity in quantum-well wires in an electric field

Using a variational technique, the effect of electron-longitudinal optical (LO) phonon interaction on the ground and the first few excited states of a hydrogenic impurity in a semiconductor quantum wire of rectangular cross section under an external electric field is studied theoretically for the impurity atom doped at various positions. The results for the binding energy as well as polaronic correction are obtained as a function of the size of the wire, the applied uniform electric field and the position of the impurity. It is found that the presence of optical phonons changes significantly the values of the impurity binding energies of the system. Taking into account the electron–LO phonon interaction the 1s→2p_y and 1s→2p_z transition energies are calculated as a function of applied electric field for different impurity positions.     

Magnetic and electric properties of layered perovskites Nd2−2xSr1+2xMn2O7 (x=0.3–0.5)

Magnetic and electric properties of layered perovskites Nd_2−2xSr_1+2xMn₂O₇ (x=0.3, 0.4 and 0.5) are sensitive to the doping content x. The sample with x=0.5 is antiferromagnetic (AFM) and insulating. On decreasing x, the AFM ordering is suppressed and a canted AFM or weak ferromagnetic (FM) ordering appears, and the resistivity decreases. The sample with x=0.4 still shows insulating behavior, but a metal–insulator transition is observed for x=0.3. By suggesting the presence of a competition between AFM super-exchange interaction and FM double-exchange interaction, the doping dependence of magnetic and electric properties can be understood.     

Relativistic calculations of 3s2 1S0-3s3p 1P1 and 3s2 1S0-3s3p 3P1,2 transition probabilities in the Mg isoelectronic sequence

Using the multi-configuration Dirac-Fock self-consistent field method and the relativistic configuration-interaction method,calculations of transition energies,oscillator strengths and rates are performed for the 3s 2 1 S 0-3s3p 1 P 1 spinallowed transition,3s 2 1 S 0-3s3p 3 P 1,2 intercombination and magnetic quadrupole transition in the Mg isoelectronic sequence(Mg I,Al II,Si III,P IV and S V).Electron correlations are treated adequately,including intravalence electron correlations.The influence of the Breit interaction on oscillator strengths and transition energies are investigated.Quantum electrodynamics corrections are added as corrections.The calculation results are found to be in good agreement with the experimental data and other theoretical calculations.     

Built-in electric field effect on cyclotron mass of magnetopolarons in a wurtzite In_xGa_（1-x）N/GaN quantum well

The cyclotron mass of magnetopolarons in wurtzite In x Ga 1 x N/GaN quantum well is studied in the presence of an external magnetic field by using the Larsen perturbation method.The effects of the built-in electric field and different phonon modes including interface,confined and half-space phonon modes are considered in our calculation.The results for a zinc-blende quantum well are also given for comparison.It is found that the main contribution to the transition energy comes from half-space and interface phonon modes when the well width is very small while the confined modes play a more important role in a wider well due to the location of the electron wave function.As the well width increases,the cyclotron mass of magnetopolarons first increases to a maximum and then decreases either with or without the built-in electric field in the wurtzite structure and the built-in electric field slightly reduces the cyclotron mass.The variation of cyclotron mass in a zinc-blende structure is similar to that in a wurtzite structure.With the increase of external magnetic field,the cyclotron mass of polarons almost linearly increases.The cyclotron frequency of magnetopolarons is also discussed.     

2p3/2−13x−1–3x−13d3/2−1 x‐ray satellites in the Lα2 region

The energies and intensities of the various transitions corresponding to the transition scheme 2p_3/2^?13x^?1–3x^?13d_3/2^?1 (i.e. L₃M_x–M_xM₄) were used to compute theoretical Lα₂ satellite spectra in 13 elements in the atomic number range of 62 ≤ Z ≤ 90. The energies were calculated using available HFS data on K–LM and L–MM transition energies. The intensities of all the possible transitions were estimated by considering cross‐sections for the Auger transitions simultaneous to a hole creation and then distributing statistically the total cross‐sections for initial two‐hole states 2p_3/2^?13x^?1 (L₃M_x) amongst various allowed transitions from these initial states to 3x^?13d_3/2^?1 (M_xM₄) final states. Each transition was assumed to give rise to a Gaussian line and the overall spectrum was computed as the sum of these Gaussian curves. The calculated spectra were compared with the available measured Lα satellite spectra. The peaks in the theoretical satellite spectra were identified as the experimentally reported satellites Lα_s, La₁₃, La₁₄ and La₁₇, which lie on the high‐energy side of the Lα₂ dipole line. Copyright © 2005 John Wiley & Sons, Ltd.     

Screening influence on the Stark effect of impurity states in strained wurtzite GaN/AlxGa1-xN heterojunctions under pressure

The screening effect of the random-phase-approximation on the states of shallow donor impurities in free strained wurtzite GaN/Al x Ga 1 x N heterojunctions under hydrostatic pressure and an external electric field is investigated by using a variational method and a simplified coherent potential approximation.The variations of Stark energy shift with electric field,impurity position,Al component and areal electron density are discussed.Our results show that the screening dramatically reduces both the blue and red shifts as well as the binding energies of impurity states.For a given impurity position,the change in binding energy is more sensitive to the increase in hydrostatic pressure in the presence of the screening effect than that in the absence of the screening effect.The weakening of the blue and red shifts,induced by the screening effect,strengthens gradually with the increase of electric field.Furthermore,the screening effect weakens the mixture crystal effect,thereby influencing the Stark effect.The screening effect strengthens the influence of energy band bending on binding energy due to the areal electron density.     

About some optical properties of AlxGa1−xN /GaN quantum wells grown by molecular beam epitaxy

Wurtzitic nitride quantum wells grown along the (0001) axis experience a large Stark effect induced by the differences of spontaneous and piezoelectric polarizations between the well and barrier materials. In Al_xGa_1−xN/GaN quantum wells, due to the adverse actions of quantum confinement, that blue-shifts transition energies, and of the Stark field, that red-shifts them, the transition energies are nearly independent of barrier compositions at a particular well thickness (L₀2.6 nm), at least for x≤0.3. The effect of alloy fluctuations is then minimal, as reflected by a minimum in the quantum well luminescence linewidth when LL₀ for wells grown by molecular beam epitaxy on silicon or sapphire substrates. We use this effect to estimate the average variances of well widths and alloy composition fluctuations. Both results are in good agreement with, respectively, a scanning tunneling microscopy study of GaN (0001) surfaces, and estimates based on the lateral extent of the quantum well excitons.We then discuss the optical properties of the Al_xGa_1−xN barrier material, with particular emphasis on the symmetry of the valence band maximum (Γ₉ or Γ₇). We show that it may play an important role in the apparent barrier luminescence efficiency. We analyse the possible consequences of the barrier Γ₉–Γ₇ crossover on the Al_xGa_1−xN/GaN quantum well properties.     

Magnetic properties and specific heat of LaMn1−xTixO3+δ (0<x0.2)

We present a magnetic study of the insulating perovskite LaMn_1−xTi_xO_3+δ (0<x0.2) including measurements of magnetization, susceptibility, and magnetic relaxation. The Curie temperature was found to decrease with increasing content of Ti. Two distinct magnetic transitions, irreversibility, non-exponential relaxation and aging effects confirm a reentrant spin–glass state for x=0.2. The time decay of the magnetization has an algebraic functional form for times up to 2 h. The specific heat also displays characteristic features of a spin–glass system by a linear low-temperature dependence and a broadened peak near the temperature of the reentrant transition.     

Hydrogen atom in strong magnetic field: a high accurate calculation in spheroidal coordinates

A B-spline-type basis set method for the calculation of hydrogen atom in strong magnetic fields in the frame of spheroidal coordinates has been introduced. High accurate energy levels of hydrogen in the magnetic field, with strength ranging from 0 to 1000 a.u., have been obtained. For the ground state, 1s₀, energies with at least 11 significant digits have been obtained. For the low-lying excited state, 2p₋₁, energies with at least 9 significant digits are obtained. The method has also been applied to the calculation of hydrogen Rydberg states in laboratory magnetic fields. Energy spectra with at least 10 significant digits are presented. A comparison with other results in the literatures has been performed. Our results are comparable to the most accurate one up to date. A possible extension to the cases of parallel and crossed electric and magnetic fields have been discussed.     

过渡族元素掺杂BaTiO3-Tb1-xDyxFe2-y层状复合材料中的磁电效应

用溶胶-凝胶法制备1.0%mol Mn,Cr,Co掺杂 BaTiO₃(BTO)粉体,在1350℃下烧结成多晶陶瓷样品.X射线衍射和差示扫描量热分析表明,室温下掺杂BaTiO₃具有四方钙钛矿结构;居里点和相变潜热随Cr,Mn,Co掺杂逐渐降低.将掺杂BaTiO₃与Tb_1-xDy_xFe_2-y(TDF)胶合制成双层磁电复合材料,并研究了Cr:BTO-TDF,Mn∶BTO-TDF,Co:BTO-TDF层状复合材料中的磁电效应.实验表明,在340×80 A·m^-1偏置磁场下, Cr:BTO-TDF的横向磁电电压系数达到最大值586 mV·cm^-1·(80 A·m^-1)^-1.在400×80 A·m^-1偏置磁场下,Mn∶BTO-TDF和Co:BTO-TDF的横向磁电电压系数的最大值分别为480 mV·cm^-1·(80 A·m^-1)^-1和445mV·cm^-1·(80 A·m^-1)^-1.研究表明掺杂BaTiO₃-TDF层状复合材料中具有较强的磁电耦合.作为无铅压电材料,掺杂BaTiO₃制备的磁电效应器件颇具应用前景. 关键词： 磁电效应 双层复合材料 3')" href="#">掺杂BaTiO₃ 1-xDy_xFe_2-y')" href="#">Tb_1-xDy_xFe_2-y     

Neutron diffraction study of the U(Pd1−xFex)2Ge2 magnetic structure

The neutron diffraction and magnetic susceptibility studies have shown that the magnetic structure of UPd₂Ge₂ changes dramatically even under very low iron doping. Though the general magnetic structure of pure UPd₂Ge₂ and of 1%Fe-doped samples is the same, the temperature intervals of existence of different magnetic phases are different. The values of transition temperatures, where (i) the ‘square’ modulated longitudinal spin-density wave (LSDW) structure with the propagation vector k=(0; 0; ) starts to transform into the sinusoidal modulated LSDW structure and (ii) the commensurate phase transforms into incommensurate one, shift under the 1%Fe doping to the higher temperatures (from 50 to 65 K and from 80 to 90 K, respectively). In the pure and 1%Fe-doped UPd₂Ge₂, the magnetic transition from the commensurate to incommensurate phase is accompanied by the drastic decrease of the propagation vector k_z. In the 2%Fe-doped sample, besides the Néel point of T_N=135 K, we have found two additional characteristic temperatures of 65 and 93 K. Below 65 K, the material has a simple antiferromagnetic (AF) structure with the propagation vector k=(0; 0; 1) and, at 65 K<T<T_N, the magnetic structure is LSDW with sinusoidal modulation. Over almost the total region 65 K<T<T_N, the LSDW magnetic structure is incommensurate. Only at about 93 K, the propagation vector passes the commensurate value of , whereas at 65<T<93 K and at 93 K<T<T_N. We have found that the magnetic susceptibility and the uranium magnetic moment are sensitive to the transition. With increasing iron concentration to x0.15, the simple AF structure with k=(0; 0; 1) develops over all temperature region up to the Néel point. Below T_N, the uranium magnetic moments are always parallel to the tetragonal c-axis.     

Higher-order nonlinear effects in a gas laser: Creation and detection of an hexadecapole moment in the neon 2p4 level

A theoretical and experimental analysis of the optical pumping of neon atoms by the 6328 Å laser line (transition 3s₂-2p₄; J = 1-J = 2) shows clear evidence for fourth-order and sixth-order nonlinear effects in gas lasers. These high-order effects involve the generation of an electric hexadecapole moment in the 2p₄ level. In a magnetic field, this moment evolves at four times the 2p₄ Larmor frequency. Due to the laser-induced coupling between 3s₂ and 2p₄, the 2p₄ hexadecapole is observed through a narrow resonance on the 3s₂ Hanle effect.