Epitaxial electrodeposition of cadmium selenide thin films on indium phosphide single crystal

Epitaxial CdSe layers were electrodeposited from a standard aqueous electrolyte onto a (111) InP single crystal. By using various characterization techniques (RHEED, XRD, HREM,...) it was demonstrated that a good epitaxy can be achieved by monitoring the experimental parameters very carefully, in particular the selenium concentration in the electrolyte and the deposition potential. For optimum conditions, the composition of the semiconducting layer is close to stoichiometry and the carrier density is around 1 × 10¹⁷ cm⁻³. Received: 23 January 1992 / Accepted: 3 March 1997     

Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β-zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S₂CNnBu₂)₂) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr₂) in P-xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.