反应离子刻蚀制备石墨烯纳米盘阵列

采用化学气相沉积法以乙醇为碳源在铜箔生长的单层高质量的石墨烯并将其转移到SiO2/Si基底上。然后在通过自组装的方法在石墨烯表面覆盖一层单层的PS微球阵列。采用反应离子刻蚀的方法在一定的刻蚀条件下对其进行刻蚀,随着刻蚀的时间增加,PS微球的会被逐渐刻蚀掉,石墨烯也会在这个过程中随着被刻蚀。将残留的PS微球杂质去掉后,会在 SiO2/Si基底上呈现出排列规整的石墨烯纳米盘阵列。通过场发射扫描电子显微镜( SEM)、拉曼光谱对石墨烯纳米盘及其形成过程进行表征和分析,为后续制备高质量石墨烯纳米带、石墨烯纳米点、石墨烯纳米盘提供参考。     

填隙法在抛光铜衬底上制备高质量石墨烯薄膜

本文对在抛光铜衬底上通过填隙法制备的高质量石墨烯薄膜进行了详细研究。在电化学机械抛光后的铜衬底上制备石墨烯晶畴,降低了晶畴的成核密度。利用光学显微镜和扫描电子显微镜对抛光铜衬底和未抛光铜衬底上制备的石墨烯晶畴进行测试,测试结果表明,铜衬底的表面形态对于降低石墨烯的成核密度,增大石墨烯晶畴的尺寸起到了至关重要的作用。利用拉曼面扫描证明了所制备的石墨烯晶畴为单层、均匀的石墨烯晶畴。然后,通过填隙法在抛光铜衬底上制备出由大尺寸单层的六边形石墨烯晶畴组成的石墨烯连续薄膜,并且通过流程示意图解释了填隙法制备高质量石墨烯薄膜的过程。本文所提出的在抛光铜衬底上通过填隙法制备石墨烯薄膜的技术,能够有效提高石墨烯薄膜的质量,进而有效改善石墨烯基电子器件的性能。     

还原氧化石墨烯/TiO2纳米线复合膜的制备及对Cu2+吸附性的影响

以石墨烯和自制TiO₂粉末为原料,通过两步水热法联合真空抽滤法制备还原氧化石墨烯/TiO₂纳米线(rGO/TiO₂ NWs)复合膜。通过扫描电子显微镜(SEM)、透射电子显微镜(TEM)、X射线衍射仪(XRD)、拉曼光谱对rGO/TiO₂ NWs复合膜的形貌、结构进行表征。研究结果表明,还原氧化石墨烯和TiO₂ NWs成功地复合在一起,复合材料中TiO₂ NWs分散性较好。Cu²⁺吸附实验结果表明,复合材料中TiO₂ NWs所占比例、pH值是影响Cu²⁺吸附效果的重要因素,研究复合材料对Cu²⁺的吸附效果应该在pH值为6.0的近中性环境。其中TiO₂ NWs含量为50%时,复合膜对Cu²⁺的吸附量最高,达到rGO薄膜的4倍。复合薄膜有较好的吸附稳定性,重复使用5次后,吸附率是原吸附量的91%。     

石墨烯上外延GaN薄膜的取向演变研究

本文研究了在石墨烯上生长GaN薄膜时晶体取向的变化。采用AlN成核层辅助生长,GaN由取向相差较大的小晶粒,逐渐合并为与石墨烯取向一致的晶粒,最终形成了约4.6μm厚的GaN薄膜。通过EBSD和XRD证实了GaN晶体取向一致性的提高,拉曼光谱也表明GaN晶体的高质量。     

Epitaxial growth of graphitic carbon on C-face SiC and Sapphire by chemical vapor deposition (CVD)

Epitaxial, graphitic carbon thin films were directly grown on C-face/(0 0 0 1¯) SiC and (0 0 0 1) sapphire by chemical vapor deposition (CVD), using propane as a carbon source and without any catalytic metal on the substrate surface. Raman spectroscopy shows the signature of multilayer graphene/graphite growth on both the SiC and sapphire. Raman 2D-peaks have Lorentzian lineshapes with FWHM of ∼60 cm⁻¹ and the ratio of the D-peak to G-peak intensity (I_D/I_G) linearly decreases (down to 0.06) as growth temperature is increased. The epitaxial relationship between film and substrates were determined by X-ray diffraction. On both substrates, graphitic layers are oriented parallel to the substrate, but exhibit significant rotational disorder about the surface normal, and predominantly rhombohedral stacking. Film thicknesses were determined to be a function of growth time, growth temperature, and propane flow rate.     

离子束溅射制备Si/Ge多层膜的结晶研究

采用离子束溅射制备Si/Ge多层膜,通过X射线小角衍射计算其周期厚度及各子层的厚度,用Raman光谱对Si/Ge多层膜的微观结构及Si子层的结构进行表征.结果表明,所制备的Si/Ge多层膜中,当Ge子层的厚度为6.2nm时,Si子层的结晶质量较好,表明适量的Ge含量有诱导Si结晶的作用.     

AlN bulk single crystal growth on 6H-SiC substrates by sublimation method

Large and thick AlN bulk single crystals up to 43 mm in diameter and 10 mm in thickness have been successfully grown on 6H-SiC (0 0 0 1) substrates by the sublimation method using a TaC crucible. Raman spectrum indicates that the polytype of the grown AlN single crystals is a Wurtzite-2H type structure, and the crystals do not include any impurity phases. The quality at the top of the crystal improves as crystal thickness increases along the 〈0 0 0 1〉 direction during growth: a low etch pit density (7×10⁴ cm⁻²) and a small full width at half maximum for a 0002 X-ray rocking curve (58 arcsec) have been achieved at a thickness of ∼8 mm. The possible mechanism behind the improvement in the AlN crystal quality is also discussed.     

Smooth diamond films grown by hot filament chemical vapor deposition on positively biased silicon substrates

Smooth diamond films have been grown by hot filament chemical vapor deposition under DC bias on mirror-polished Si(100) substrates. Films of a few micrometers thickness were obtained in 30 min. The films were found to have d-spacing at 2.06 and 2.11 Å by X-ray diffraction. Raman spectra showed very broad peaks at 1329 (1336) and 1591 cm^-1. The films have a high density of planar defects and large internal stresses.     

化学气相沉积单层VIB族过渡金属硫化物的研究进展

2004年以来,石墨烯因其优异的光学、电学性质而被广泛地研究,但由于其零带隙的特性极大地限制了它的应用前景.单层的VIB族过渡金属硫化物(TMDs)拥有类似石墨烯的晶体结构及可控的能带结构,是一类理想的二维直接带隙半导体材料,不仅可用于探索如谷极化等一些基础和前沿的物理问题,也可以广泛应用于纳米器件、光电子学和光催化的研究.近年来,化学气相沉积(CVD)技术作为一种相较于传统化学合成或物理剥离更加有效的制备方法被引入此类材料的生长,能够合成出拥有大面积连续的、厚薄均匀和较高晶体质量的单层TMDs.基于此,重点介绍了利用CVD技术生长单层TMDs所取得的进展,讨论了各工艺条件(如反应温度、载流气体、衬底、前驱物与衬底之间的距离等)对单层TMDs的生长及性质的影响.最后,探讨了利用CVD技术实现调控单层TMDs的尺寸、覆盖度和层厚均匀性的途径和方法.     

Internal stress and the deformation phase transition in nanoscale barium-strontium titanate films

It has been established by varying the thickness of Ba_0.8Sr_0.2TiO₃ heteroepitaxial films grown via the layer-by-layer mechanism on (100) MgO substrates that there is a critical film thickness (～50 nm): the internal strain field in the films with a thickness below critical is much weaker than in the films with a thickness exceeding critical. Tensile and compressive stresses occur at thicknesses, respectively, below and above critical. The existence of critical thickness is confirmed by the X-ray diffraction data and Raman spectroscopy.     

Hydrothermal synthesis of MoO3 nanobelt‐graphene composites

A composite of graphene sheets decorated with molybdenum trioxide (MoO₃) nanobelts has been fabricated via a facile and efficient hydrothermal route in the presence of NaCl. The structure, morphology of these promising composites were investigated by means of field‐emission scanning electron microscopy (FE‐SEM), transmission electron microscopy (TEM), X‐ray diffraction (XRD), Raman spectroscopy and thermogravimetric (TG) analysis. FESEM and TEM studies suggest the presence of uniform crystalline MoO₃ nanobelts and graphene sheets in as‐prepared hybrid materials. XRD and Raman results confirm the reduction of graphite oxide (GO) sheets to graphene sheets accompanying by the formation of MoO₃ nanobelts. Moreover, thermal properties of GO and MoO₃ nanobelt‐graphene composites reveal that thermal stability of the obtained MoO₃ nanobelt‐graphene composites is obviously higher than that of GO due to the transformation of GO sheets to highly stable graphene sheets in the hybrids. This work could provide new insights into the fabrication of high quality MoO₃‐graphene hybrid nanomaterials and facilitate their potential applications in different fields. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

热电池MnO2/石墨烯正极制备及电性能研究

采用水热法合成了MnO2/石墨烯复合材料,通过扫描电子显微镜( SEM)分析了材料的表面形貌,通过X射线衍射(XRD)和X射线光电子能谱(XPS)表征了材料的晶相结构和组成,采用恒流放电的方式对LiSi/LiCl-KCl/( MnO2/G)单体电池进行了电性能的测试。测试结果表明反应体系中加入GO后获得的材料由大量的纳米花球式和纳米棒式结构无规则的交织排列在一起,α-MnO2纳米簇结构依附在石墨烯纳米片上;产物在2θ为22°~27°时出现了较宽的无序堆叠的石墨烯的衍射峰;Mn元素氧化后离子状态为Mn4+;LiSi/LiCl-KCl/( MnO2/G)单体电池有两个放电平台,分别为2.58 V、1.96 V,放电电压截止到1.0 V时,对应的放电比容量达到1150.2 mAh/g。     

Fabrication of ferric oxide/reduced graphene oxide/cadmium sulfide heterostructure photoelectrode for enhanced photoelectrochemical performance

A novel high‐efficiency photoelectrode (Fe₂O₃/reduced graphene oxide/CdS) built from heterostructure and conductive scaffold has been successfully designed and synthesized. Reduced graphene oxide works as a “bridge” which benefits for electron and hole transport. The obtained heterostructure photoelectrodes were systematically characterized by X‐ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM), Raman spectroscopy, and X‐ray photoelectron spectroscopy (XPS). The photoconversion efficiency (η) and photocurrent densities vs. time (I‐t) curves responding to monochromatic lights have been further investigated in‐depth, which reveals that introduction of CdS and reduced graphene oxide played an important role in the enhancement of photoelectrochemical performance.     

高质量金刚石膜在无氧铜衬底上的MPCVD

本文采用高纯无氧铜(Cu)片作为基片,用自行设计的微波等离子体化学气相沉积系统,制备出了高质量多晶金刚石膜.用场发射扫描电子显微镜(SEM)、Raman散射谱和X射线衍射谱(XRD)对制备的金刚石膜进行了表征与分析,其结果证明金刚石膜具有较优的质量.     

Tetragonal tungsten oxide nanobelts synthesized by chemical vapor deposition

Tungsten trioxide (WO₃) nanobelts in tetragonal structure were grown on Si substrates by a hot-wall chemical vapor deposition (CVD) method without using catalysts. The products were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy, and photoluminescence (PL) spectrum. The width of the nanobelts is in the range of 50–100 nm with width-to-thickness ratios of 5–10 and lengths of up to tens of micrometers. These nanobelts grew along the [0 0 1] direction and can be identified as the tetragonal WO₃ structures. Raman and PL measurements indicate the high quality of the nanobelts. The vapor–solid growth mechanism could be applicable in our experiment.     

熔盐法和水热法KTP晶体的晶胞参数及拉曼光谱特征

利用X射线衍射和显微激光拉曼光谱研究熔盐法自发结晶的KTP晶体、顶部籽晶熔盐法KTP晶体和水热法KTP晶体的晶胞参数和拉曼光谱特征,分析和比较不同方法生长的KTP晶体的晶体结构与化学键特征峰.研究表明:KTP晶体的晶胞参数与晶体生长方法有关,熔盐法自发结晶的KTP晶体生长过程中降温速率较快,晶胞体积相对较小;熔盐法和水热法KTP晶体中部分拉曼特征峰的位置因生长方法不同呈现一定的差异,水热法KTP晶体在782 cm-1、744 cm-1和515 cm-1处出现的特征峰可视为水热法KTP晶体的标志峰,借此可将其与熔盐法晶体相区分.     

抛光铜箔衬底上石墨烯可控生长的研究

本文报导以固态聚苯乙烯为碳源,经机械抛光和电化学抛光双重处理的铜箔为衬底,用CVID法进行石墨烯可控生长的研究结果.用光学显微镜、原子力显微镜、拉曼光谱、光透射谱、扫描隧道显微镜和场发射扫描电镜对生长的石墨烯进行了表征.研究发现经过抛光处理的铜箔由于其平整的表面和很低的表面粗糙度,在其上生长的石墨烯缺陷少,结晶质量高.而未经抛光处理的铜箔在石墨烯生长过程中,铜箔不平整的表面台阶会破坏其上生长的石墨烯的微观结构,在生长的石墨烯二维结构中产生高密度晶界和缺陷.还在双重抛光处理的铜箔上实现了石墨烯的层数可控生长,结果表明固态碳源聚苯乙烯的量为15 mg时可生长出单层石墨烯,通过控制固态源重量得到了1～5层大面积石墨烯.     

Use of different rapid mixing devices for controlling the properties of magnetite nanoparticles produced by precipitation

Magnetite nanoparticles were precipitated by the classic Massart's method in a 2.5 L stirred tank reactor where the injection of reagent solutions was effectuated by different micro-mixers (T-tube and Hartridge-Roughton rapid mixing devices). The specific surface area, the average particle size and the particle size distribution were highly influenced by changing operating parameters. Laser Diffraction, BET adsorption, Energy-Dispersive X-ray Spectroscopy (EDX), Raman spectroscopy and Transmission Electron Microscopy (TEM) were used for characterizing magnetite nanoparticles. Especially, Hartridge-Roughton micromixer appears to be the most efficient mixing device for producing magnetite nanoparticles. The average particle size of magnetite nanoparticles prepared by Hartridge-Roughton rapid mixing device was less than 10 nm and the EDX and Raman spectroscopy shows that the particle purity is quite high.     

不同晶相WO3的热分解法制备及其光催化性能

以钨酸铵为钨源,硝酸为沉淀剂,首先通过沉淀法制备前驱体H2 WO4,随后采用热分解H2 WO4法合成六方及单斜晶相WO3催化剂.利用X射线衍射(XRD)、拉曼光谱、差热-热重(TG-DTA)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)及紫外-可见漫反射光谱(UV-Vis DRS)对H2 WO4向WO3转变过程中结构、形貌、组成及光学性质的变化进行研究.结果表明,热处理后前驱体发生如下相变过程:H2 WO4→六方相WO3→六方/单斜相WO3→单斜相WO3.此外,以罗丹明B为模拟污染物,考察不同晶相WO3的光催化活性,结果表明,六方相WO3具有更高的光催化性能,单斜相WO3的活性较低.     

沉积温度对热蒸发法制备SiO2一维纳米材料的影响

利用热蒸发法在N型硅片表面成功制备出大面积SiO2纳米线和SiO2纳米棒结构.采用X射线粉末衍射(XRD),扫描电子显微镜(SEM),X射线能量色散谱(EDX),拉曼光谱(RS)和光致发光(PL)对合成的产物进行了表征.结果表明,用此方法生长的SiO2纳米材料,其结构和形貌与生长参数关系密切,随着沉积温度降低纳米线长度变短,最后呈现出棒状结构.此外,还研究了SiO2纳米结构独特的光学性质.该研究对改善光电子半导体器件的性能应用具有重要意义.