Density Functional Theory Calculations Revealing Metal‐like Band Structures and Work Function Variation for Ultrathin Gallium Arsenide (111) Surface Layers

Density functional theory (DFT) calculations have been performed on tunable numbers of gallium arsenide (100), (110), and (111) planes for their electron density of states (DOS) plots and the corresponding band diagrams. The GaAs (100) and (110) planes show the same semiconducting band structure with tunable plane layers and a band gap of 1.35 eV around the Fermi level. In contrast, metal‐like band structures are obtained with a continuous band structure around the Fermi level for 1, 2, 4, 5, 7, and 8 layers of GaAs (111) planes. For 3, 6, and 9 GaAs (111) planes, the same semiconducting band structure as seen in the (100) and (110) planes returns. The results suggest the GaAs {111} face should be more electrically conductive than its {100} and {110} faces, due to the merged conduction band and valence band. GaAs (100) and (110) planes give a fixed work function, but the (111) planes have variable work function values that are smaller than that obtained for the (100) and (110) planes. Furthermore, bond length, bond geometry, and frontier orbital electron number and energy distribution show notable differences between the metal‐like and semiconducting plane cases, so the emergence of plane‐dependent electronic properties have quantum mechanical origin at the orbital level. GaAs should possess similar facet‐dependent electronic properties to those of Si and Ge.     

Silicon Wafers with Facet‐Dependent Electrical Conductivity Properties

By breaking intrinsic Si (100) and (111) wafers to expose sharp {111} and {112} facets, electrical conductivity measurements on single and different silicon crystal faces were performed through contacts with two tungsten probes. While Si {100} and {110} faces are barely conductive at low applied voltages, as expected, the Si {112} surface is highly conductive and Si {111} surface also shows good conductivity. Asymmetrical I –V curves have been recorded for the {111}/{112}, {111}/{110}, and {112}/{110} facet combinations because of different degrees of conduction band bending at these crystal surfaces presenting different barrier heights to current flow. In particular, the {111}/{110} and {112}/{110} facet combinations give I –V curves resembling those of p–n junctions, suggesting a novel field effect transistor design is possible capitalizing on the pronounced facet‐dependent electrical conductivity properties of silicon.     

Facet‐Dependent Electrical Conductivity Properties of Silver Oxide Crystals

Ag₂O cubes, truncated octahedra, rhombic dodecahedra, and rhombicuboctahedra were synthesized in aqueous solution. Two tungsten probes were brought into contact with a single particle for electrical conductivity measurements. Strongly facet‐dependent electrical conductivity behaviors have been observed. The {111} faces are most conductive. The {100} faces are moderately conductive. The {110} faces are nearly non‐conductive. When electrodes contacted two different facets of a rhombicuboctahedron, asymmetrical I–V curves were obtained. The {111} and {110} combination gives the best I–V curve expected for a p‐n junction with current flowing in one direction through the crystal but not in the opposite direction. Density of states (DOS) plots for varying number of different lattice planes of Ag₂O match with the experimental results, suggesting that the {111} faces are most electrically conductive. The thicknesses of the thin surface layer responsible for the facet‐dependent properties of Ag₂O crystals have been determined.     

Two Different Products Observed in the Reaction of a Bis(germylene) with Molybdenum Hydride [Mo(H)Cp(CO)3]

The reaction of the dimeric bis(germylene) [Ge{3,5‐(CF₃)₂pz}₂]₂ ( 2 ) with protic molybdenum hydride [Mo(H)Cp(CO)₃] yielded two different products. In diethyl ether the divalent germylene readily inserts into the Mo–H σ‐bond and the product of the oxidative addition, [Ge(H){Mo}(pz)₂] ( 4 ) (with pz = 3,5‐disubstituted pyrazole, 3,5‐(CF₃)₂pz; {Mo} = [MoCp(CO)₃]), was isolated featuring a germanium(IV) hydride moiety. In toluene an interesting “cascade” reaction takes place furnishing a bis‐metal substituted digermane [{Mo}(H)(pz)Ge–Ge(pz)₂{Mo}]. Although the detailed mechanism of the reaction remains the subject of speculation it seems likely that a germylene, [Ge^II(pz){Mo}], inserts into the germanium(IV) hydrogen bond of [Ge(H){Mo}(pz)₂] under formation of a germanium‐germanium bond, which is a rare reaction behaviour.     

Two‐, One‐, and Zero‐Dimensional Elemental Nanostructures Based on Ge9‐Clusters

We investigated the structural principles of novel germanium modifications derived by oxidative coupling of Zintl‐type [Ge₉]^4?clusters in various ways. The structures, stabilities, and electronic properties of the predicted {²_∞[Ge₉]_n} sheet, {¹_∞[Ge₉]_n} nanotubes, and fullerene‐like {Ge₉}_n cages were studied by using quantum chemical methods. The polyhedral {Ge₉}_n cages are energetically comparable with bulk‐like nanostructures of the same size, in good agreement with previous experimental findings. Three‐dimensional structures derived from the structures of lower dimensionality are expected to shed light on the structural characteristics of the existing mesoporous Ge materials that possess promising optoelectronic properties. Furthermore, 3D networks derived from the polyhedral {Ge₉}_n cages lead to structures that are closely related to the well‐known LTA zeolite framework, suggesting further possibilities for deriving novel mesoporous modifications of germanium. Raman and IR spectra and simulated X‐ray diffraction patterns of the predicted materials are given to facilitate comparisons with experimental results. The studied novel germanium modifications are semiconducting, and several structure types possess noticeably larger band gaps than bulk α‐Ge.     

On‐Surface Reactive Planarization of Pt(II) Complexes

A series of Pt(II) complexes with tetradentate luminophores has been designed, synthesized, and deposited on coinage metal surfaces with the aim to produce highly planar self‐assembled monolayers. Low‐temperature scanning tunneling microscopy (STM) and density functional theory (DFT) calculations reveal a significant initial nonplanarity for all complexes. A subsequent metal‐catalyzed separation of the nonplanar moiety at the bridging unit via the scission of a C?N bond is observed, leaving behind a largely planar core complex. The activation barrier of this bond scission process is found to depend strongly on the chemical nature of both bridging group and coordination plane, and to increase from Cu(111) through Ag(111) to Au(111).     

Efficient PAW‐based bond strength analysis for understanding the In/Si(111)(8 × 2) – (4 × 1) phase transition

A numerically efficient yet highly accurate implementation of the crystal orbital Hamilton population (COHP) scheme for plane‐wave calculations is presented. It is based on the projector‐augmented wave (PAW) formalism in combination with norm‐conserving pseudopotentials and allows to extract chemical interactions between atoms from band‐structure calculations even for large and complex systems. The potential of the present COHP implementation is demonstrated by an in‐depth analysis of the intensively investigated metal‐insulator transition in atomic‐scale indium wires self‐assembled on the Si(111) surface. Thereby bond formation between In atoms of adjacent zigzag chains is found to be instrumental for the phase change. © 2017 Wiley Periodicals, Inc.     

Saturated Heavier Group 14 Compounds as ‐Electron‐Acceptor (Z‐Type) Ligands

This review article describes the chemistry of transition‐metal complexes containing heavier group 14 elements (Si, Ge, and Sn) as the σ‐electron‐acceptor (Z‐type) ligands and discusses the characteristics of bonds between the transition metal and Z‐type ligand. Moreover, we review the iridium hydride mediated cleavage of E–X bonds (E=Si, Ge; X=F, Cl), where the key intermediates are pentacoordinate silicon or germanium compounds bearing a dative M→E bond.     

离子液体中Au(111)和Pt(111)表面Ge欠电位沉积的现场STM研究

本文研究BMIPF₆离子液体中Au(111)和Pt(111)表面Ge的电沉积行为. 循环伏安法测试结果表明,在含0.1 mol·L^-1 GeCl₄的BMIPF₆溶液Au(111)和Pt(111)表面均有两个与Ge沉积过程相关的还原峰. 第一个还原峰包含了Ge⁴⁺还原成Ge²⁺及Ge的欠电位沉积,第二个还原峰对应Ge的本体沉积. 现场扫描隧道显微镜研究结果表明,Ge在Au(111)和Pt(111)表面均有两层欠电位沉积. 第一层欠电位沉积厚度约为0.25 nm、形貌平整、带有缝隙的亚单层结构. 第二层欠电位沉积形貌相对粗糙的点状团簇结构. 该欠电位沉积过程伴随表面合金化.     

Bottom‐Up On‐Surface Synthesis of Two‐Dimensional Graphene Nanoribbon Networks and Their Thermoelectric Properties

Graphene, the one‐atom‐thick two‐dimensional (2D) carbon material, has attracted tremendous interest in both academia and industry due to its outstanding electrical, mechanical, and thermal properties. For electronic applications, the challenging task is to make it as a semiconductor. The bottom‐up synthesis of semiconducting one‐dimensional (1D) nanometer‐wide graphene strips, namely, graphene nanoribbons (GNRs), has attracted much attention owing to its promising electronic, optical, and magnetic properties. In this regard, we report the fabrication of cove‐type 2D GNR networks (GNNs) via the interconnection of 1D self‐assembled GNRs on the surface of Au(111). The cove‐type 2D GNRs networks (GNNs) were fabricated from the GNR, 5‐CGNR‐1‐1 , synthesized using the precursor of DBSP . Annealing of high‐density self‐assembled GNRs on the surface of Au(111) through two‐zone chemical vapour deposition (2Z CVD) successfully generated a 2D interconnected structure with high yield via the fusion and ladder coupling reactions of GNR chains. In order to validate the later fusion reaction, we have also synthesized the GNR, 7‐AGNR‐1‐1 , using the precursor of DBBA . The GNNs, which consist of hybridized metallic‐like and semiconducting GNRs, are a new class of carbon‐based materials. Further, we applied this material for thermoelectric (TE) applications and found a very low cross‐plane thermal conductivity of 0.11 Wm^?1 K^?1, which is one of the lowest value among the carbon‐based materials as well as inorganic semiconductors, while maintaining the cross‐plane electrical conductivity of 188 S m^?1.     

熔铁催化剂还原过程的原位XRD研究及活性相的形成机理

选择Fe1-xO基和Fe3O4基氨合成熔铁催化剂ZA-5和A110, 采用XRD原位反应器模拟真实的还原条件进行原位XRD实验. 通过对还原过程的物相跟踪分析和对前驱体、活性相的XRD微结构动态演化分析表明, ZA-5和A110的还原温度区间分别为300~362 ℃和343~450 ℃, 前者比后者具有更快的还原速度及更低的还原温度; ZA-5和A110在(211)和(110)方向的晶粒度比值(D₍₂₁₁₎/D₍₁₁₀₎)分别为0.7014和0.8631, ZA-5催化剂具有更好的高活性(211)晶面, 其活性相微观应力明显比A110大, 且随着温度升高逐渐减小; 采用Rietveld全谱拟合结构分析和Popa模拟技术对活性相晶形进行模拟, 得到A110活性相晶形为凹陷立方体, ZA-5为立方体和球形的混合晶形, ZA-5的高活性晶面(111)和(211)晶面比A110生长更好; ZA-5催化剂活性相晶形从低温的类八面体向高温球形演化, 在355 ℃时有比较完善的八面体晶形, 此温度下(111)晶面生长得最好; ZA-5催化剂活性相与前驱体的八面体晶形结构匹配性好, 比A110更容易还原.     

Surface X-ray scattering of stepped surfaces of platinum in an electrochemical environment: Pt(331) = 3(111)-(111) and Pt(511) = 3(100)-(111)

Real surface structures of the high-index planes of Pt with three atomic rows of terraces (Pt(331) = 3(111)-(111) and Pt(511) = 3(100)-(111)) have been determined in 0.1 M HClO(4) at 0.1 and 0.5 V(RHE) with the use of surface X-ray scattering (SXS). The surfaces with two atomic rows of terraces, Pt(110) = 2(111)-(111) and Pt(311) = 2(100)-(111) = 2(111)-(100), are reconstructed to a (1 × 2) structure according to previous studies. However, the surfaces with three atomic rows of terraces have pseudo-(1 × 1) structures. The interlayer spacing between the first and the second layers, d(12), is expanded 13% on Pt(331) compared to that of the bulk, whereas it is contracted 37% on Pt(511). The surface structures do not depend on the applied potential on either surface.     

Electron correlation effects at semiconductor surfaces and interfaces: Si(111)-5x5, Si(111)-7x7 and Sn/Ge(111)

Electron correlation effects associated with the dangling bond surface states of Si(111)-5×5, Si(111)-7×7 and Sn/Ge(111)-3×3 are analyzed. In all the cases, extensive LDA-calculations are performed and effective two-dimensional Hamiltonians are deduced. Our analysis of these Hamiltonians shows that: (a) the Si(111)-5×5 surface states exhibits a metal-insulator transition; (b) the Si(111)-7×7 surface shows important similarities with the Si(111)-5×5 case, but it has a dangling bond surface band having a metallic character; (c) finally, the Sn/Ge(111)-3×3 dangling bond surface bands also shows important correlation effects that are found, however, not to affect the metallic character of the surface bands.     

2,4,6-三硝基-2,4,6-三氮杂环己酮的晶体形貌预测

利用Materials Studio 5.0软件包中的Morphology模块所含的BFDH、Growth Morphology和Equilibri-um Morphology三种方法计算了2,4,6-三硝基-2,4,6-三氮杂环己酮的晶体形貌,得到了特定晶面的面积、附着能、表面能及晶面相对生长速率等参数,确定了形态学上重要的生长晶面.各晶面的表面结构分析结果表明,(101)和(111)晶面为强极性晶面,(002)、(110)和(021)晶面为极性晶面,而(020)晶面为非极性晶面.据此可以预测,在强极性的质子溶剂中,(101)和(111)晶面为形态学上重要的晶面,(002)、(110)和(021)晶面的显露面可能增加,而(020)晶面会变小或消失.在非极性溶剂中,情况则可能刚好相反.     

Ge4Br4[Mn(CO)5]4 and Ge6Br2[Mn(CO)5]6: first germanium cluster compounds containing Mn(CO)5 ligands

Cluster compounds of germanium exhibiting germanium-germanium bonds, where the germanium atoms are additionally bound to transition metal ligands, are rare. Here a synthetic pathway to such cluster compounds is described, starting from metastable Ge I halide solutions leading to the two cluster compounds Ge4Br4[Mn(CO)5]4 and Ge6Br2[Mn(CO)5]6, being the first examples of germanium cluster compounds bearing Mn(CO)5 ligands. The Ge6 compound exhibits a novel arrangement of germanium atoms that has not been previously observed in ligand stabilized cluster compounds of germanium, neither with organic nor with transition metal ligands. The bonding situation inside the cluster compounds is discussed, together with a possible reaction pathway that opens the way to metalloid cluster compounds of germanium exhibiting Mn(CO)5 ligands.     

Electrochemistry of platinum single crystal surfaces: Part II. Structural effect on formic acid oxidation and poison formation on Pt (111), (100) and (110)

The geometrical arrangement of sites favourable for formic acid oxidation and the poison formation reaction is determined using low index platinum single crystal planes. For this determination, the least number of sites required for the reactions to occur, which was obtained in the study of electrocatalysis by adatoms, was used, that is three adjacent sites are required for formic acid oxidation and four adjacent sites are required for poison formation.The triplet of sites on a unit lattice of Pt (111) and that on a unit lattice of Pt (100) plane are equally very favourable for the main oxidation reaction, but that on a unit lattice of Pt (110) is not so favourable as those on the former two planes. The oxidation rate is more than one order of magnitude lower on the latter than on the former triplets.The poison formation reaction proceeds at a very high rate on the (100) and the (110) planes. The geometrical arrangement of four sites on a square unit lattice of the (100) plane and on a rectangular unit lattice of the (110) plane are favourable for the poison formation reaction, but that on a hexagonal unit lattice of the (111) plane is not so favourable as the former two.     

Stereoelectronic structure of 3-(trichlorogermyl)propionic acid by the results of <Emphasis Type="Italic">ab initio</Emphasis> calculations

Two structures of the 3-(trichlorogermyl)propionic acid molecule and its dimer were calculated by the RHF/6-31G(d) method with the full geometry optimization. The structure with pentacoordinated germanium atom is by 4.71 kcal mol^?1 more favorable than that with tetracoordinated germanium. The strength of coordination bond in the first structure increases with the absolute values of charge on the Ge and O coordination centers. The relatively small values of these charges result in a weak coordination bond. In the first structure, this bond is weaker than in the dimer, since the Ge…O distance in it (3.016 Å) is larger than in the latter (2.898 Å). This bond is formed due to the rapproachment of the Ge and O coordination centers at their electrostatic interaction. This provides the transfer of electron density from the atoms of the donor fragment of the molecule to the atoms of the germanium coordination polyhedron. The coordination centers serve as the conductors for the electron density transfer.     

Adsorption properties and vibrational spectra of propyne adsorbed on Rh(111). Comparison with other (111) metal surfaces

We have studied the adsorption properties of propyne on the Rh(111) surface by means of the generalized gradient approach of density functional theory using periodic slab models. The simulation of the vibrational spectra has permitted us to corroborate and complete the experimental band assignment and to confirm the adsorption site preference. Propyne prefers to sit on a 3-fold hollow site, with the C[triple bond]C axis parallel to a Rh-Rh bond and the molecular plane tilted away from the surface normal. The comparison between the adsorption behaviour of propyne on Rh(111) and on other (111) metal surfaces allows one to provide an explanation for the different reactivity observed experimentally.     

A comparative study of hydroxide adsorption on the (111), (110), and (100) faces of silver with cyclic voltammetry, ex situ electron diffraction, and in situ second harmonic generation

Hydroxide adsorption on the (111), (110), and (100) faces of silver electrodes from mixed NaOH/NaF solution is studied using cyclic voltammetry and in situ second harmonic generation (SHG). Cyclic voltammograms for the three low index silver planes in alkaline electrolytes are for the first time compared. They show two pairs of anodic and cathodic peaks in the potential interval below the equilibrium Ag/Ag(2)O potential. These are attributed to the specific adsorption of hydroxide ions followed by submonolayer oxide formation. The differences in the cyclic voltammograms for the (111), (110), and (100) planes are attributed to different (i) work functions, (ii) surface atomic densities, and (iii) corrugation potentials for these surfaces. Ex situ low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED) show that disordered adlayers are formed on Ag(111) and Ag(100), in contrast to Ag(110), where ordered structures are produced in the region of the first pair of current peaks. In the region of the second pair of peaks, LEED indicates disordered oxide phases on each crystal plane and RHEED shows the presence of small islands of c(2 x 2) structure at some potentials on (110) and (100). SHG measurements were performed (i) in the potential scan mode at constant rotational angle and (ii) at constant potential as a function of the rotational angle. The isotropic (for the (111), (110), and (100) planes) and anisotropic (for the (110) and (111) planes) contributions to the SHG intensity were calculated by fitting the experimental data and are discussed in terms of their dependence on the charge density at the interface, on hydroxide adsorption, and on submonolayer oxide formation.     

Ultrathin films of Ge on the Si(100)2 × 1 surface

The Ge/Si(100)2 × 1 interface was investigated by means of Auger electron spectroscopy, low‐energy electron diffraction, thermal desorption spectroscopy, and work function measurements, in the regime of a few monolayers. The results show that growth of Ge at room temperature forms a thermally stable amorphous interface without significant intermixing and interdiffusion into the substrate, for annealing up to ~1100 K. Therefore, the Ge‐Si interaction most likely takes place at the outmost silicon atomic plane. The charge transfer between Ge and Si seems to be negligible, indicating a rather covalent bonding. Regarding the Ge overlayer morphology, the growth mode depends on the substrate temperature during deposition, in accordance with the literature. Stronger annealing of the germanium covered substrate (>1100 K) causes desorption of not only Ge adatoms, but also SiGe and Ge₂ species. This is probably due to a thermal Ge‐Si interdiffusion. In that case, deeper silicon planes participate in the Ge‐Si interaction. Above 1200 K, a new Ge superstructure (4 × 4)R45^o was observed. Based on that symmetry, an atomic model is proposed, where Ge adatom pairs interact with free silicon dangling bonds.