The unusual magnetotransport properties of La0.67Sr0.33MnO3 with Nb2O5 addition

Enhancements of the low-field (LFMR) and high-field magnetoresistance (HFMR) were observed in the manganite system prepared by doping Nb₂O₅ into La_0.67Sr_0.33MnO₃ powders. The maximum MR ratios at 77 K with H=1 T and 1 kOe are 30% and 20% for the 0.07 molar ratio doped sample, which are 1.7 times and 1.6 times as large as that for LSMO, respectively. An MR effect up to 6.5% was also found for the sample with x=0.03 at room temperature (RT). The spin-dependent tunneling and scattering at the interfaces of grain boundaries are responsible for the LFMR while the HFMR originates from a noncollinear spin structure in the surface layer. With increasing x, the Curie temperature (T_C) decreases monotonically from 364 to 154 K while the temperature T_P related to the peak resistivity decreases firstly to a minimum of 204 K (x=0.06) and then rises up to 240 K (x=0.1). There is a maximum resistivity ρ for the sample with x=0.06, which is higher than that for LSMO by five orders of magnitude. It is due to the enhancement of spin-dependent and independent scattering and tunneling effects on the interfaces of grain boundaries and inside the grains.     

High hydrostatic pressure effect on magnetic state of anion-deficient La0.70Sr0.30MnOx perovskite manganites

The magnetic state of La_0.70Sr_0.30MnO_x (x=2.85, 2.80) anion-deficient manganites is studied experimentally under hydrostatic pressure up to 5.2 GPa. These materials possessing the properties of a spin-glass state. The La_0.70Sr_0.30MnO_2.85 exhibits a coexistence of the rhombohedral (R3¯c) and tetragonal (I4/mcm) crystal structures and below T_f 50 K the spin-glass state is formed. The La_0.70Sr_0.30MnO_2.80 exhibits the tetragonal (I4/mcm) crystal structure. For this compound a phase-separated magnetic state below T_f is formed, involving coexistence of C-type antiferromagnetic (AFM) clusters within spin-glass matrix. In both compounds the crystal structure and magnetic states remain stable upon compression. Under the hydrostatic pressure up to 1 GPa, the La_0.70Sr_0.30MnO_2.85 is a spin glass with a smeared phase transition to the paramagnetic state. The freezing temperature T_f of the magnetic moments of the ferromagnetic clusters increases at a rate of 4.30 K/GPa and the magnetic ordering temperature T_MO increases at a rate of 12.90 K/GPa. The enhancement of the ferromagnetic properties of La_0.70Sr_0.30MnO_2.85 anion-deficient manganite under hydrostatic pressure is explained by the redistribution of oxygen vacancies and a decrease in the unit cell parameters.     

Effects of milling-induced disorder on the lattice parameters and magnetic properties of hematite

A ball-milling treatment in air for 30 min is enough to reduce anhydrous bulk hematite (-Fe₂O₃) grains to nanometric sizes. For milling times, t_m, of 15, 30 min, 1 and 2 h, the crystals suffer an anisotropic lattice dilation, which is more pronounced for the smaller average grain sizes attained. Mössbauer and susceptibility results show that the process alters the effective Morin temperatures, T_M. The transition occurs less sharply than for the non-milled material and spreads over a maximum extent of 50 K for t_m=30 min. The susceptibility data indicate that the T_M for the fraction of material undergoes the transition shifts toward values not lower than 235 K. For t_m=10 h the transition is suppressed down to 12 K. Our results do not allow distinguishing bulk from surface regions of the grains. In addition, the disorder brought about by the milling reduces the magnetic response in the weak ferromagnetic state of -Fe₂O₃. The modification of T_M seems to depend mainly on the anisotropic dilation of the unit cell that affects the whole grain and it is related to the nanometric grain sizes achieved.     

Annealing dependence of magnetic properties in nanostructured Sm0.5Y0.5Co5

Nanocrystalline Sm_0.5Y_0.5Co₅ powders with high coercivity H_C and enhanced remanence M_r were prepared by mechanical milling and subsequent annealing. Annealing temperatures T ranging from 973 to 1173 K, and times t ranging from 1 to 5 min were used. X-ray diffraction (XRD) and DC-magnetization measurements were carried out to study the microstructure and magnetic properties of these samples. XRD patterns demonstrate that the average grain size D of the nanocrystalline powders depends on the annealing temperature T and time t: D ranges from 11 nm (for T=973 K and t=1 min) to 93 nm (for T=1173 K and t=5 min). Magnetic measurements performed at room temperature indicate high coercivity values (H_C>955 kA/m), and enhanced remanence (M_r/M_max>0.5) for all samples. A strong annealing-induced grain size dependence of these magnetic properties was found.     

Magnetic properties of YCo5 (70%wt)+Y2Co17 (30%wt) nanocomposite powders at low temperatures

Nanostructured YCo₅ (70%wt)+Y₂Co₁₇ (30%wt) composite powders were prepared by mechanical milling and subsequent annealing at 1073 K for 1.5 min. The average grain size D of the YCo₅ and Y₂Co₁₇ phases, obtained from XRD data, was 14 and 12 nm, respectively. The temperature dependence of the magnetic properties was studied by DC magnetization measurements at temperatures T ranging from 3 to 300 K. Hysteresis loops (H_max=70 kOe) show that both the coercivity H_C and the squareness σ_r/σ_max are temperature-dependent. The coercivity increases from 12 kOe at room temperature to 18 kOe at T=3 K. The observed enhanced remanence (σ_r/σ_max>0.5) indicates that a strong exchange coupling is present at all temperatures used in this study. The maximum magnetization σ_max changes little with temperature and has a value of about 70% of the effective saturation magnetization of the title compound.     

Anomalous magnetic behavior of the Co0.53Ga0.47 spin glass above the freezing temperature

We present here the detailed analysis of the magnetic behavior of the Co_0.53Ga_0.47 alloy, especially at temperatures above the freezing temperature T_f = 10 K. Low field static magnetization measurements were performed by using the SQUID magnetometer in the temperature range 5–65 K and magnetic fields up to 100 Oe. The temperature dependence of the field cooled susceptibility π_FC(T) at T > T_f has an anomaly, which is displayed in the double change of the curvature near T_s = 24 K. The data of magnetization M_FC in an external field H lie on a universal curve M_FC(H/T) at temperatures T_f < T < T_s. The plots of π^-1_FC(T) and non-linear magnetic susceptibility π^nl_FC(T^-3) are linear lines in the temperature range T_f−T_s. The strong deviation of π^-1_FC(T) and π^nl_FC(T^-3) from straight line, taking place at T T_s, indicates that T_s is an upper temperature limit of the classical superparamagnetic behavior with the constant cluster moment. The results suggest that such phenomena may be fairly universal for spin glasses.     

Temperature dependence of the electrical resistivity of amorphous Co80−xErxB20 alloys

The temperature dependence of the electrical resistivity of amorphous Co_80−xEr_xB₂₀ alloys with x=0, 3.9, 7.5 and 8.6 prepared by melt spinning in pure argon atmosphere was studied. All amorphous alloys investigated here are found to exhibit a resistivity minimum at low temperature. The electrical resistivity exhibits logarithmic temperature dependence below the temperature of resistivity minimum T_min. In addition, the resistivity shows quadratic temperature behavior in the interval T_min<T<77 K. At high temperature, the electrical resistivity was discussed by the extended Ziman theory. For the whole series of alloys, the composition dependence of the temperature coefficient of electrical resistivity shows a change in structural short range occurring in the composition range 8–9 at%.     

Temperature dependence of thermal and electrical conductivity of Bi-based high-Tc (2 2 2 3) superconductor

Superconducting samples with nominal composition Bi_1.6Pb_0.4Sr₂Ca₂Cu₃O_δ were prepared by the conventional solid-state reaction technique. The samples have been characterized by X-ray diffraction, dc electrical resistivity, ac magnetic susceptibility and thermal conductivity. The X-ray diffraction studies were done at room temperature and the lattice constants of the material were determined by indexing all the peaks. All the above measurements show that, there exists two phases i.e. high-T_c (2 2 2 3) and low-T_c (2 2 1 2). The information obtained from dc electrical resistivity data agrees with ac magnetic susceptibility measurements. The onset temperature T_c (onset) and zero resistivity temperature T_c (R = 0) of the samples remains within the temperature 120 ± 1 K and 103 ± 1 K. Thermal conductivity has been measured with a transient plane source (TPS) technique in the temperature range 77–300 K. The estimation of the electrical resistivity change due to scattering by phonons and impurities has been discussed. An increase in thermal conductivity is observed above and below T_c (R = 0). The electron–phonon scattering time, phonon-limited mobility and the size of the electron–phonon constant are also calculated. Wiedemann–Franz law is applied to gain prediction about the magnitude of electronic and phonon contribution to the total thermal conductivity of the samples. It is observed that heat is mainly conducted by the phonons in this system.     

High-resolution electron microscopy study of Ni81Fe19 film with Co33Cr67 buffer layer

The anisotropic magnetoresistance (AMR) in permalloy Ni₈₁Fe₁₉ film deposited on a 1.2 nm Co₃₃Cr₆₇ buffer layer was significantly enhanced. The high-resolution electron microscopy was used to study the microstructure of Ni₈₁Fe₁₉ film with and without Co₃₃Cr₆₇ buffer layer. It was found that Co₃₃Cr₆₇ buffer layer can induce good (1 1 1) texture, while without Co₃₃Cr₆₇ buffer layer, Ni₈₁Fe₁₉ film show randomly oriented grain structure. The Δρ/ρ enhancement is attributed to the decrease in the resistivity ρ of the Ni₈₁Fe₁₉ film due to the formation of the large (1 1 1) textured grains in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer. However, the surface roughness of substrate may limit the (1 1 1) textured grain size and induce additional grain boundaries in Ni₈₁Fe₁₉ film with Co₃₃Cr₆₇ buffer layer, limit the enhancement of the AMR effect.     

Flux creep and flux flow for thallium ceramics in a pulsed magnetic field

The resistive properties of Tl-ceramics with T_c|=0=114 K were investigated in a pulsed magnetic field (B) up to 30 T and in the temperature range of 4.2 K<T<140 K. It was shown that the character of the field dependence of the resistance differs qualitatively in high-and low-temperature regions. At low (T80K) temperatures the dynamic magnetoresistance arising in the sample is analogous to that observed earlier in LaSrCuO [1] and YBaCuO [2] ceramics. This magnetoresistance is defined by the magnetic field variation rate and leads to the appearance of a minimum at the maximum of the magnetic field pulse, i.e. at . In the region of high temperatures (80 K T<T_c) or magnetic fields (at T60K) the sample resistance rises monotonically with B increase, and dynamic resistance is not observed. In this temperature range the existence of a scaling relation is shown (here B^* and T^* meet the condition k=(B^*, T^*)/ _n(T^*)=const) for the ceramics resistance (B,T), which can be represented as . An estimate for the upper critical field B_c2(0)B_o=1030±40 T is obtained.     

Electrical and magnetic properties of polyaniline/Fe3O4 nanostructures

We report on electrical and magnetic properties of polyaniline (PANI) nanotubes (150 nm in diameter) and PANI/Fe₃O₄ nanowires (140 nm in diameter) containing Fe₃O₄ nanoparticles with a typical size of 12 nm. These systems were prepared by a template-free method. The conductivity of the nanostructures is 10⁻¹–10⁻² S/cm; and the temperature dependent resistivity follows a ln ρT^−1/2 law. The composites (6 and 20 wt% of Fe₃O₄) show a large negative magnetoresistance compared with that of pure PANI nanotubes and a considerably lower saturated magnetization (M_s=3.45 emu/g at 300 K and 4.21 emu/g at 4 K) compared with the values measured from bulk magnetite (M_s=84 emu/g) and pure Fe₃O₄ nanoparticles (M_s=65 emu/g). AC magnetic susceptibility was also measured. It is found that the peak position of the AC susceptibility of the nanocomposites shifts to a higher temperature (>245 K) compared with that of pure Fe₃O₄ nanoparticles (190–200 K). These results suggest that interactions between the polymer matrix and nanoparticles take place in these nanocomposites.     

Silver addition in thick films of La2/3Ca1/3MnO3 perovskite

Thick films of La_2/3Ca_1/3MnO₃ with 10 wt% of silver are grown on single crystal SrTiO₃ by using the paint-on method. The electrical properties of the films are quite different compared to the pristine counterpart. The samples with silver addition exhibit a very low resistivity and the insulator to metal transition occurs at higher temperature (270 K) than the undoped samples. The resistance versus temperature dependence in these films is very sharp and the magnetoresistance ratio is restricted to a narrow temperature range, close to the electric transition for both cases. The improved properties of the thick films are associated with the improvement of the connectivity between the grains, although microstructural effects are not ruled out.     

Structure and NO reactivity of Zr-deposited Pd surfaces

The structure and NO reactivity of Zr-deposited Pd surfaces were investigated by X-ray photoelectron spectroscopy, low-energy electron diffraction, infrared reflection absorption spectroscopy, and temperature-programmed desorption. Zr on Pd(1 0 0) was oxidized to ZrO₂ by exposure to O₂ at 773 K. Heating at 823 K in a vacuum led to decomposition of ZrO₂ to Zr metal and O₂. The activation energy for ZrO₂ decomposition changed remarkably at Θ_Zr = 0.4. For Θ_Zr > 0.4, a hexagonal structure was observed for ZrO₂/Pd(1 0 0); no ordered structure was observed for Θ_Zr < 0.4. Deposited Zr had no significant effect on the adsorption and decomposition of NO on Pd(1 0 0) but resulted in a creation of new NO dissociation sites on Pd(3 1 1). Zr on Pd(3 1 1) was oxidized to ZrO_X by oxygen produced from NO dissociation. Heating at 823 K in a vacuum led to decomposition of ZrO_X to Zr metal and O₂.     

Aspects of “low field” magnetotransport in epitaxial thin films of the ferromagnetic metallic oxide SrRuO3

Epitaxial thin films of the conductive ferromagnetic oxide SrRuO₃ were grown on an (0 0 1) SrTiO₃ (STO) substrate by using DC sputtering technique. The magnetic and magnetoresistive properties of the films were measured by applying the magnetic field both perpendicular (out-of-plane) and parallel (in-plane) to the film plane and ever maintaining the direction of the applied field perpendicular to that of the transport current. The films grown on an (0 0 1) STO substrate showed identical magnetization properties in two orthogonal crystallographic directions of the substrate, [1 0 0]_S and [0 0 1]_S (in-plane and out-of-plane geometry), which suggests the presence of a multi domain structure within the plane of the film. For such samples, no anisotropic field (hard axis) along de [0 0 1]s direction, i.e., perpendicular to the film-plane could be detected. Nevertheless, a distinguishable temperature dependent out-of-plane anisotropic magnetoresistance (MR) along with strong temperature dependent low field hysteretic MR(H) behavior was detected for the studied films. A negative MR ratio MR(T)=[ρ(μ₀H=9 T; T)−ρ( μ₀H=0 T; T)]/ρ( μ₀H=0 T; T) on the order of a few percent, with maximums of 6% and 4% (right at the Curie temperature, T_C 160 K) was calculated for an in-plane and out-of plane measuring geometry, respectively. In addition there is an equally strong MR effect at low temperatures, which might be related to the temperature dependence of the magnetocrystalline anisotropy together with a magnetization rotation. Both the MR(T) behavior and the achieved values (except for T<30 K) are similar to those obtained on SrRuO₃ films grown on 2° miscut (0 0 1) STO substrates with the current parallel to the field and parallel to the direction, which was identified as the easier axis for magnetization.     

Low temperature magnetotransport properties of La0.55Ho0.15Sr0.3MnO3

Magnetotransport data measured in thin films of La_0.55Ho_0.15Sr_0.3MnO₃ down to very low temperatures (0.25 K) are reported. The samples presented colossal magnetoresistance with a T_C close to 200 K. A minimum in the resistance vs. T curve and a drop in the ZFC magnetization were also observed. It was also found a T-dependent relaxation effect after the magnetic field was either applied or removed. These results can be understood within the framework where electronic scattering occurs across magnetic domain walls in a reentrant spin-glassy-like phase.     

Magnetic and electronic phase transitions and magnetoresistance effect in the Pr0.5−xLaxSr0.5MnO3 (, 0.15) system

The electronic and magnetic phase transitions of Pr_0.5−xLa_xSr_0.5MnO₃ with x=0.10 and 0.15 were investigated. The M(T) and ρ(T) curves for these samples clearly show transitions from antiferromagnetic insulator to ferromagnetic semiconductor, ferromagnetic metal and finally to paramagnetic semiconductor as the temperature is increased from 5 to 300 K. Especially, two obvious protrudent peaks in the magnetoresistance curves MR(T) for these samples were clearly observed in the relative low magnetic field, 1 T. One peak appears at around the antiferromagnet-ferromagnet transition temperature T_N (150 K) with MR≈−23%, another occurs at around the ferromagnet-paramagnet transition temperature T_C(275 K ) with MR≈−8.2%. In addition, when the magnetic field was increased, the temperature corresponding to the MR peak at T_N shifts to lower temperature while the temperature corresponding to the MR peak at T_C is fixed.     

Spin glass behaviour and magnetic anisotropy in DyFe4Al8 single crystals

Measurements of electrical resistivity, AC and DC magnetic susceptibilities of a DyFe₄Al₈ single crystal were performed in the temperature range 4.2–300K. A thermomagnetic effect was found below 30K. The strong anisotropy of the magnetic susceptibility occurs in the whole temperature range and is very pronounced at low temperatures. A T²-dependence of the electrical resistivity in the temperature range 4.2–100K and an antiferromagnetic transition at 185K were found. A cusp in the AC susceptibility was observed below 100K with a maximum at 30K.     

Linear and nonlinear critical magnetic properties and transport in Nd0.75Ba0.25MnO3 single crystal: evidence for its anomalous critical behavior near TC

The data on the resistance and magnetoresistance (MR) as well as measurements of the linear and nonlinear susceptibilities are presented for a Nd_0.75Ba_0.25MnO₃ single crystal with the Curie temperature T_C≈129 K. Although this compound remains insulating in the ferromagnetic state, its resistance has an anomaly near T_C and it reveals the colossal magnetoresistance. The data on the magnetic response are well described by the dynamic scaling theory for 3D isotropic ferromagnets in the paramagnetic critical region at τ>τ^*≈0.11, τ=(T−T_C)/T_C. Below τ^* an anomalous critical behavior is found that suggests the coexistence of two magnetic phases. This behavior is discussed in terms of a phase separation which can occur in the moderately doped manganites exhibiting an orbital ordering.     

Adsorption and reactions of CH2I2 on Ru(001) surface

The adsorption and dissociation of CH₂I₂ were studied at 110 K with the aim of generating CH₂ species on the Ru(001) surface. The methods used included X-ray photoelectron spectroscopy (XPS), ultraviolet photoelectron spectroscopy (UPS), temperature programmed desorption (TPD), Auger electron spectroscopy (AES) and work function measurements. Adsorption of CH₂I₂ is characterized by a work function decrease (0.96 eV at monolayer), indicating that adsorbed CH₂I₂ has a positive outward dipole moment. Three adsorption states were distinguished: a multilayer (T_p=200 K), a weakly bonded state (T_p=220 K) and an irreversibly adsorbed state. A new feature is the formation of CH₃I, which desorbs with T_p=160 K. The adsorption of CH₂I₂ at 110 K is dissociative at submonolayer, but molecular at higher coverages. Dissociation of the monolayer to CH₂ and I proceeded at 198–230 K, as indicated by a shift in the I(3d_5/2) binding energy from 620.6 eV to 619.9 eV. A fraction of adsorbed CH₂ is self-hydrogenated into CH₄ (T_p=220 K), and another one is coupled to di-σ-bonded ethylene, which — instead of desorption — is converted to ethylidyne at 220–300 K. Illumination of the adsorbed CH₂I₂ initiated the dissociation of CH₂I₂ monolayer even at 110 K, and affected the reaction pathways of CH₂.