Burst and 1/f noise in light-emitting diodes with quantum dots

We study the low-frequency electric noise characteristics of light-emitting diodes with InAs quantum dots in a GaInAs layer. Burst noise having the character of random telegraph signal (RTS) is found against the 1/f noise background in the noise voltage of some specimens. A procedure based on the standard theory of signal detection against the noise background is proposed for a separate study of these noise components. It is found that Hooge’s empirical relation applied to p-n diodes for the first time by Kleinpenning is also applicable to 1/f noise in quantum-dot diodes. The current dependences of statistical characteristics of the 1/f and RTS noise components are compared to show that the physical origins of RTS noise and 1/f noise in the studied specimens are different. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 49, No. 5, pp. 437–447, May 2006.     

Equivalent circuit of silicon diodes subjected to high-fluence electron irradiation

Silicon diodes with a p ⁺-n junction made in a 48-μm-thick phosphorus-doped silicon epilayer (resistivity ρ = 30 Ω cm) grown on antimony-doped Si(111) wafers (ρ = 0.01 Ω cm) are studied. The diodes are irradiated by high-energy (3.5 MeV) electrons with fluences from 5 × 10¹⁵ to 2 × 10¹⁶ cm⁻². It is shown that the conventional equivalent circuit of the diode that consists of a parallel RC network and a series-connected resistor inadequately describes the dependence of the dielectric loss tanδ on variable current frequency f in the range 1 × 10²–3 × 10⁷ Hz. Another equivalent circuit is suggested that includes not only the capacitance and resistance of the n-base (the latter increases because radiation-induced defects are compensated for by shallow donors) but also the f dependence of the capacitance of the space-charge region, which is due to retarded charge exchange between deep-level radiation-induced defects.     

基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型,并通过实验予以验证.研究结果表明,辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落,因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱     

Hall effect noise: Fluctuations in number or mobility?

The purpose of this paper is to show that the 1/f noise in the Hall voltage as reported by Brophy and Rostoker can be interpreted in terms of fluctuations in the mobility of free-charge carriers. Brophy and Rostoker have claimed that 1/f noise in the Hall voltage is a direct proof of 1/f fluctuations in the free-carrier density. Their conclusion is shown to be wrong.     

PbS红外探测器低频噪声物理模型及缺陷表征研究

为了表征PbS薄膜光导红外探测器的材料缺陷,详细推导了1/f和产生-复合(g-r)噪声物理模型,并由实验数据验证了模型的准确性. 利用1/f噪声与表面缺陷关系,计算了不同偏压下表面陷阱密度. 得到该值随偏压升高而增加,由此得出1/f噪声与所加偏压成正比变化,与实验测试结果相一致. 在此模型基础上,研究了g-r噪声与深能级缺陷特征参量的关系,提出由低频噪声表征缺陷激活能、简并因子、俘获截面等缺陷参数的方法. 关键词： 红外探测器 1/f噪声')" href="#">1/f噪声 噪声')" href="#">g-r噪声 缺陷     

A novel technique for measuring resistance fluctuations independently of background noise

A novel method is presented for measuring the spectral density of resistance fluctuations without the explicit determination of the voltage background noise (Johnson noise, pre-amplifier noise). The output of a standard ac bridge excited by a single-frequency alternating current is demodulated by two phase-sensitive detectors which operate in quadrature. When the phase difference between excitation and detection is properly set, the real part of the cross-spectral density of the two demodulators shows only the spectral density of the resistance fluctuations and not the disturbing background noise. The feasibility of our new method is demonstrated by measurements of 1/f noise of a thin-film A1 sample.     

Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer

The effects of current distribution in LED chips on the electrical potential and optical light extraction efficiency are investigated by a numerical simulation. The results show that when the resistivity of the current-spreading layer is decreased there is current-crowding near the n-contact. On the other hand, when the resistivity in the current-spreading layer increases, there is current-crowding near the p-contact. When the current is crowded near the n-contact due to less resistivity of the current-spreading layer, the input power is lower because of the smaller series resistance in the chip, and the light extraction efficiency is higher since the shadowing effect of the p-contact can be avoided. For L _p = 50 μm in this study, the light extraction efficiency at ρ _ITO = 0.1 × 10⁻³ Ω·cm is 1.4 times better than that when L _p = 100 μm, even though the driving voltage is raised 1.02 times.     

1/f noise at a critical nonequilibrium phase transition

The generation of 1/f noise is demonstrated experimentally in a system consisting of a superconducting film carrying a transport current in contact with a boiling liquid coolant. It is found that wide-band 1/f noise with a large amplitude of the fluctuations is observed over a wide range of parameters. This noise is attributed to the fact that the sub-systems in contact have the same character of the relaxational dependences δT(t)∼ t ^−1/2. Pis’ma Zh. éksp. Teor. Fiz. 63, No. 9, 739–742 (10 May 1996)     

Mooij rule and weak localization

It has been shown that the observed correlation between the resistivity ρ of high-resistivity metallic alloys and the sign of the temperature derivative of their resistivity can be explained by taking into account the weak localization effect. This correlation is as follows: the derivative dρ/dT is negative for alloys with resistivity in the range of 150–300 μΩ cm, which corresponds to the mean free path of electrons about the interatomic distance; however, this derivative is positive for alloys with lower resistivities (Mooij rule).     

Electrical and optical properties of pulse plated CdS<Subscript><Emphasis Type="BoldItalic">x</Emphasis></Subscript>Te<Subscript>1-<Emphasis Type="BoldItalic">x</Emphasis></Subscript> films

Thin films of CdS_xTe_1-x were deposited by the pulse electrodeposition technique using cadmium sulfate, sodium thiosulfate, and tellurium dioxide on titanium and conducting glass substrates. Structural studies indicated the formation of polycrystalline films possessing hexagonal structure. The resistivity varies from 53 Ω cm to 8 Ω cm as the stochiometric coefficient “x” value decreases from 1 to 0. The carrier concentration increases with CdTe concentration. It is observed that as the post-heat treatment temperature increases, the photosensitivity also increases. It is observed that a post-heat treatment temperature of 550 °C results in high photosensitivity as well as low light resistance. The optical constants, refractive index (n) and extinction coefficient (k) were evaluated from the transmission spectra of the films of different composition.     

A wet chemical preparation of transparent conducting thin films of Al-doped ZnO nanoparticles

A wet chemical deposition method for preparing transparent conductive thin films on the base of Al-doped ZnO (AZO) nanoparticles has been demonstrated. AZO nanoparticles with a size of 7 nm have been synthesised by a simple precipitation method in refluxed conditions in ethanol using zinc acetate and Al-isopropylate. The presence of Al in ZnO was revealed by the EDX elemental analysis (1.8 at.%) and UV–Vis spectroscopy (a blue shift due to Burstein–Moss effect). The obtained colloid solution with the AZO nanoparticles was used for preparing by spin-coating thin films on glass substrates. The film demonstrated excellent homogeneity and transparency (T > 90%) in the visible spectrum after heating at 400 °C. Its resistivity turned to be excessively high (ρ = 2.6 Ω cm) that we ascribe to a poor charge percolation due to a high film porosity revealed by SEM observations. To improve the percolation via reducing the porosity, a sol–gel solution was deposited “layer-by-layer” in alternation with layers derived from the AZO colloid followed by heating. As it was shown by optical spectroscopy measurements, the density of thus prepared film was increased more than twice leading to a significant decrease in resistivity to 1.3 × 10⁻² Ω cm.     

Photoconductivity and Hall-effect of iron-diffused silicon

Silicon diffused with iron is investigated by photoconductivity and Hall-effect measurements. We used three different iron sources, namely FeCl₃, an evaporated iron film, and Fe by ion implantation. Iron exhibits inp-type, boron-doped 1 Ωcm silicon and in high-resistivity (1 kΩcm) silicon an acceptor level ofE _c -0.55 eV. No influence of the iron was observed inn-type, phosphorous-doped 0.5 Ωcm silicon. NoE _v +0.4 eV level was observed. It is pointed out that iron in silicon must be regarded in connection with at least three parameters, namely the quenching rate, the chemical identity of the shallow dopant, and the initial resistivity of the silicon samples.     

1/f Noise in a nonequilibrium phase transition: Experiment and mathematical model

The results of an experimental investigation of a high-power source of broad-band 1/f noise, which can be generated in a system of two interacting nonequilibrium phase transitions, are presented. This process takes place when a normal conductor-superconductor phase transition is superposed on the critical liquid-vapor transition in a boiling coolant. A mathematical model describing a nonequilibrium phase transition in a complicated nonlinear system with two interacting order parameters, which involves the conversion of white noise into stochastic fluctuations of the order parameters with 1/f and 1/f ² spectra, is proposed. The properties of the model fluctuations with a 1/f spectrum agree qualitatively with the experimentally observed properties. A characteristic difference between the model fluctuations with a 1/f ² spectrum and random walks is also noted. Zh. éksp. Teor. Fiz. 113, 1748–1757 (May 1998)     

基于小波变换和维纳滤波的半导体器件1/f噪声滤波

针对半导体器件中普遍存在的1/f噪声提出了一种结合了提升小波变换和维纳滤波器的处理方法.首先利用重新加权迭代最小二乘法拟合1/f噪声的功率谱曲线得到噪声参数的估计,从而选择恰当的小波.其次,对包含了1/f噪声的信号进行提升小波变换.考虑到小波变换对1/f噪声的白化作用,利用维纳滤波器对每一层小波系数进行处理.设计了最优全通滤波器以校正维纳滤波器的相频特性,使得小波系数经滤波后相位不变.最后利用提升小波逆变换获得被1/f噪声淹没的信号.利用实验检验了提出方法的有效性,实验数据采自用于微创外科手术机器人的力传感器.结果表明提出的方法能够有效抑制1/f噪声,并使传感器的分辨力提高了25%. 关键词： 半导体器件 f噪声')" href="#">1/f噪声 提升小波变换 维纳滤波     

Phase space quantization as a moment problem

We consider questions related to the following quantization scheme: a classical variable f: Ω → ℝ on a phase space Ω is associated with a unique semispectral measure E ^f , such that the kth moment operator of E ^f is required to coincide with the operator integral L(f ^k , E) of f ^k with respect to a certain fixed phase space semispectral measure E. Mainly, we take the phase space Ω to be a locally compact unimodular group. In the concrete case where Ω = ℝ² and E is a translation covariant semispectral measure, we determine explicitly the relevant operators L(f ^k , E) for certain variables f. In addition, we consider the question under what conditions a positive operator measure is projection valued. The text was submitted by the author in English.     

Persistent spin splitting of a two-dimensional electron gas in tilted magnetic fields

The effect of atomic disorder on the electron transport and the magnetoresistance (MR) of Co₂CrAl Heusler alloy (HA) films has been investigated. We show that Co₂CrAl films with L2₁ order exhibit a negative value for the temperature coefficient of resistivity (TCR) in a temperature range of 10 < T < 290 K, and the temperature dependence of electric conductivity varies as T ^3/2 similarly to that of the zero-gap semiconductors. The atomic or the site disorder on the way of L2₁ → B2 → A2 → amorphous state in Co₂CrAl HA films causes the deviation from this dependence: reduction in the absolute value of TCR as well as decrease in the resistivity down to ϱ(T = 293 K) ∼ 200 μΩ cm in comparison to ϱ(T = 293 K) ∼ 230 μΩ cm typical for the Co₂CrAl films with L2₁ order. The magnetic-field dependence of MR of the Co₂CrAl films with L2₁ order is determined by two competing contributions: a positive Lorentz scattering and a negative s-d scattering. The atomic disorder in Co₂CrAl films drastically changes MR behavior due to its strong influence on the magnetic properties.     

Extending the Redshift-Distance Relation in Cosmological General Relativity to Higher Redshifts

The redshift-distance modulus relation, the Hubble Diagram, derived from Cosmological General Relativity has been extended to arbitrarily large redshifts. Numerical methods were employed and a density function was found that results in a valid solution of the field equations at all redshifts. The extension has been compared to 302 type Ia supernova data as well as to 69 Gamma-ray burst data. The latter however do not truly represent a ‘standard candle’ as the derived distance moduli are not independent of the cosmology used. Nevertheless the analysis shows a good fit can be achieved without the need to assume the existence of dark matter. The Carmelian theory is also shown to describe a universe that is always spatially flat. This results from the underlying assumption of the energy density of a cosmological constant Ω_Λ=1, the result of vacuum energy. The curvature of the universe is described by a spacevelocity metric where the energy content of the curvature at any epoch is Ω _K =Ω_Λ−Ω=1−Ω, where Ω is the matter density of the universe. Hence the total density is always Ω _K +Ω=1.     

Power spectrum of density fluctuations in a finite reactive-diffusive system: resistance fluctuation spectroscopy

The measurement in thermal equilibrium of the vacancy contribution to the residual resistivity of metals has posed certain difficulties. The recent experiment of Celasco and co-workers represents a new, powerful approach to this problem, via the measurement of the power spectrum of the voltage noise generated by resistivity fluctuations. The latter originate in vacancy number fluctuations. We develop a theory for the power spectrum, incorporating three basic features. Vacancies can be annihilated in the material and they diffuse. Grain boundaries act as sources and sinks for vacancies. Both annihilation (a form of reaction) and diffusion are noisy processes. We therefore set up and solve a reactive-diffusive stochastic equation for the instantaneous density, with appropriatefinite boundary conditions. Assuming for simplicity that the grains are spherical, the power spectrum is evaluated exactly, in closed form. A detailed comparison with experiment is made. The physical origins of different time scales in the problem and the consequent frequency regimes in the power spectrum are analysed. Recognising the very general applicability of our theory, we also mention possible applications to other problems.     

Structure, electrical and chemical properties of zirconium nitride films deposited by dc reactive magnetron sputtering

2 and Ar ambient. X-ray diffraction indicated that growth of ZrN with a preferred (111) orientation over Si(100) was achieved. The resistivity of the films varies from 200 μΩcm to 15 μΩcm depending on the N₂ content in the working gas. The square resistance of the films deposited on 96% Al₂O₃ ceramic wafers is stable below 300 °C. Received: 17 June 1996/Accepted: 9 December 1996     

Low-frequency fluctuations in stochastic processes with a 1/<Emphasis Type="Italic">f</Emphasis><Superscript>α</Superscript> spectrum

The results of numerical analysis of the Brownian movement of a particle in the force field of the potential corresponding to interacting subcritical and supercritical phase transitions are considered. If the white noise intensity corresponds to the critical intensity of the noise-induced transition, the system of stochastic differential equations describes random steady-state processes with fluctuation power spectra inversely proportional to frequency f, S(f) ∼ 1/f ^α, where exponent α varies in the interval 0.8 ≤ α ≤ 1.8. Exponent β of distribution function P(τ) ∼ τ^−β for the duration of low-frequency extremal fluctuations, which are analogous to avalanches considered in the models of self-organized criticality in many respects, varies between the same limits. It is shown that exponents α and β are connected through the relation α + β = 2.