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1.
罗斌  吕鸿昌  陈建国 《中国激光》1997,24(7):595-599
对Kuznetsov采用的速率方程加以修正,考虑了俄歇效应的影响,载流子寿命不再作为常数处理,而写成载流子浓度的函数。由此导出了两段式半导体激光器存在双稳的必要条件,计算结果表明,吸收区偏置电流对双稳条件影响极大,对具体器件而言,若增益区和吸收区隔离电阻不够大,几个mA的偏置电流泄露到吸收区就使器件难以产生双稳。  相似文献   

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3.
晏绪光 《激光杂志》1995,16(6):251-256
报导了输出反馈泵浦型双稳半导体激光器双稳物性随器件参量变化的实验结果,双稳实验曲线和理论计算曲线的对比分析表明,双稳特性随各参量变化规律安全相同,实验和理论之间的微小差别来源于光探测器的实测饱和曲线和理论模型之间的差异,以及实际的半导体激光器存在自发辐射。  相似文献   

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5.
钟立晨  唐运新  秦鹰  郭奕理 《中国激光》1986,13(12):749-752
介绍一种紧凑的、能以较低输入光功率工作的光学双稳器件,由光电检测器、光纤定向耦合器和半导体激光二极管组合而成的。描述了工作原理,解释所观测到的一些效应,例如滞后回线、微分增益以及记忆功能。  相似文献   

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Robert N.Hall,1919年诞生在美国康涅狄格州的纽黑文,从加州理工学院毕业后进入通用电器研究发展中心工作。1962年,Hall在半导体结中实现了粒子数反转,创建了第一台半导体结激光器。这种器件,根据特殊设计的p—n结,用电流将电子直接注入结中运行,因此允许从紧凑的发射源以高效率产生相干光。当今,以Hall原始思想工作的二极管激光器,广泛地应用于如CD、DVD显示器、激光打印机和光纤通讯系统等领域。  相似文献   

8.
张靳  黄磊  王东生  殷聪  巩马理 《激光技术》2007,31(3):228-231,241
为了评价光学组合半导体激光器的输出光束性能,采用两种方法从理论上分析了光学组合半导体激光器的输出光束的光束传播因子.第1种方法与传统堆栈式半导体激光器的光束质量评价方法类似,通过几何光学得到光束束宽;第2种方法采用管芯光强分布的类高斯模型计算输出光束的二阶矩进而得到光束束宽,最后均得到输出光束的光束传播因子与激光条单元数及激光条包含管芯数的关系.进行了3个激光条组成的光学组合半导体激光器的实验,获得输出功率120W,功率密度209W/cm2,光束平均间距1.1mm,整体光束传播因子M2=197.对比了两种方法及实验结果.结果表明,这两种方法可以用来估算光学组合半导体激光器的输出光束质量.  相似文献   

9.
基于端面泵浦碱金属蒸汽激光器的速率方程模型,研究了半导体激光泵浦铯蒸汽激光器的工作特性。通过改变泵浦参数和蒸汽池参数,分析了各参数对激光器的泵浦吸收特性和激光输出特性的影响。结果表明:铯蒸汽吸收的功率和激光器的输出功率会随泵浦功率、乙烷压强的增大而出现饱和现象,随泵浦光中心波长对铯原子吸收波长的偏离而呈类高斯型的变化趋势,随氦气压强的增大而先增强后减弱。此外,还存在临界泵浦光线宽和温度范围使激光器保持正常运转。结果与已报道的实验现象有较好的符合,可为进一步的实验探索提供借鉴和参考。  相似文献   

10.
文章从两段式吸收型双稳半导体激光器(TABL)的速率方程组出发,数字模拟了在不同的吸收区偏置下,TABL的输出功率、输出波长和输出电流环宽度等重要特性的变化,并对获得的结果进行了分析。  相似文献   

11.
A circuit model for multimode bistable laser diodes (BLD) has been developed from the rate equations. The model is simulated for dc sweep and transient conditions using circuit simulation program PSPICE. The hysteresis behaviour and the dynamic properties of the longitudinal modes of the BLD are studied. The dc sweep simulation shows “S”-shaped bistability for the fundamental mode, whereas the sidemodes exhibit a “loop”-like bistability. The transient simulation also shows similar behaviour  相似文献   

12.
We have simulated the static and dynamic characteristics of voltage-controlled multiple-quantum-well (MQW) bistable laser diodes. To investigate the time response of the saturable absorber under applied electric field, we performed pump-probe measurements with picosecond resolution. The obtained differential transmission signals indicate the reduction of the carrier escape time for the saturable absorber with increasing applied electric field. The field screening effect caused by spatial change of the carrier distribution is an important factor, as is phase space filling due to the photogenerated carriers. On the basis of the time response measurements, we have designed an MQW bistable laser by solving the modified rate equation including the recovery time response of the absorption saturation, A saturable absorption region narrower than 10 μm is suitable for obtaining a low threshold device. To achieve low switching power and high switching speed, it is important to optimize the bias conditions and the MQW structures. We can expect a turn-off time of less than 10 ps, and a repetition rate of over 5 GHz from the calculations  相似文献   

13.
GaAs基半导体激光器热特性   总被引:1,自引:1,他引:1  
对GaAs基808nm半导体激光器进行恒流老化试验,并利用电学法观察退化过程中激光器有源区温度变化和热阻,发现有源区温度随老化时间明显上升,而热阻没有明显变化,同时测试了老化过程中激光器的电学和光学特性,经分析,激光器失效的主要原因是有源区载流子非辐射复合增加,引起激光器有源区温度上升,从而说明电学法热特性测试是检测激...  相似文献   

14.
The effect of undershoot switching, downward switching from the upper to the lower state by undershooting caused by the rapid diminishing of the applied optical pulse, is analyzed for bistable laser diodes with inhomogeneous current injection. The height and width of the optical input pulse superposed on the optical bias are shown to play an important role in undershoot switching as well as the level of the optical bias. It is also shown that set-reset and the generation of the optical monostable pulse can be done by using undershoot switching  相似文献   

15.
吴正茂  陈建国 《激光杂志》1996,17(4):173-176
考虑到实际的物理过程,本文在通常采用的两段式双稳半导体激光器的速率方程经且中增加了描述两区增益的线型函数,同时考虑到由于受吸收区的影响,TABL的输出波长不仅与增益区的增益有关,而且与吸收区也有关,因而应是两区共同作用的结果,因此根据物理事实我们增添了一个方程来反映这个特征,在此基础上,利用修正后的速率方程组。数据模拟了两段式双稳半导体激光器上跳时某些重要参量的变化。  相似文献   

16.
New types of bistable optical devices consisting merely of laser diodes and/or light-emitting diode and photodetectors allow one to achieve optical bistability and optical differential gain. For their novel applications, fundamental optical logic functions such as an optical AND device, inverter, and flip-flop devices are analyzed and demonstrated experimentally for the first time. The inherent simplicity of structure and operation should make it possible to establish these optical digital devices in the form of monolithic optoelectronic integration. Some schemes of their integrated logic elements are also presented and discussed for developing key elements in sophisticated optical data and image processing in the near future.  相似文献   

17.
Kawamura  Y. Wakita  K. Asahi  H. Oe  K. 《Electronics letters》1987,23(14):719-721
A new type of optically bistable operation using a resonant tunnelling effect has been achieved for InGaAs/lnAIAs MQW laser diodes for the first time. A clear optical bistability with a large on/off ratio was observed in the light output/voltage characteristics. Optical memory operation was also obtained with this MQW laser diode.  相似文献   

18.
Weak optical feedback can transform the relaxation oscillations of the solitary laser diode in self-sustained pulsations. A bistability of such limit cycles supported by the same external cavity modes is investigated. Novel analytical expressions for the pulsation amplitudes, frequencies and the range of bistability are derived. They are in excellent agreement with numerical simulations  相似文献   

19.
关联噪声和周期信号驱动的非对称双稳系统的稳态分析   总被引:2,自引:1,他引:1  
运用Liouville equation和诺维科夫原理,解出了关联噪声和周期信号共同驱动的非对称双稳系统的近似福克-普朗克方程,并求解了其稳态概率密度函数.在此基础上,分析了乘性噪声强度 、加性噪声强度 、噪声间关联系数 ,周期信号振幅 、频率 以及系统非对称参数 等对稳态概率密度分布曲线的影响.结果表明:(1)噪声强度及其关联、周期信号振幅、系统非对称参数的改变均能引起稳态概率密度分布曲线单峰结构和双峰结构之间的转换,即能够诱导非平衡相变产生;(2)周期信号频率改变时,没有非平衡相变发生;(3)当系统非对称参数为零时,稳态概率密度分布曲线具有关于 的对称结构;当系统非对称参数不等于零时,其对称结构被破坏.  相似文献   

20.
Thim  H. 《Electronics letters》1971,7(10):246-247
It has been demonstrated experimentally that high-quality Gunn diodes exhibit switching between two stable states. One of them is the ohmic state below threshold. The other one is a low-current high-voltage state and is associated with a stationary high-field layer at the anode.  相似文献   

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