27Al satellite transition spectroscopy (SATRAS) of polycrystalline aluminum borate 9Al2O3.2B2O3.

27Al NMR spectra of polycrystalline aluminum borate 9Al2O3.2B2O3 have been measured at 104, 130 and 156 MHz. The parameters of the quadrupole interaction and the isotropic chemical shifts have been obtained by fitting the CT/MAS pattern and consideration of the inner satellite transitions m = 3/2<-->1/2 and m = - 1/2<-->- 3/2. The gain in spectral resolution concerned with the observation of the MAS lines of the inner satellites leads to complete separation of the signals of AlO6, AlO5 and AlO4 polyhedra. Also signals of structural groups of one and the same coordination number can be distinguished. Experimental and theoretical lineshape calculations are compared.     

The role of Sb in the structure of Sb2O3–B2O3 binary glasses—an NMR and Mössbauer spectroscopy study

Glasses of general formula xSb₂O₃ (1−x)B₂O₃ (0x0.8) have been prepared by conventional melt- quenching. Mössbauer spectroscopy shows that a fraction of the Sb³⁺ is converted to Sb⁵⁺ and this fraction increases with x. High-field ¹¹B MAS NMR gives well-resolved resonances from boron atoms which are 3- and 4-coordinated to oxygen. The fraction of 4-coordinated boron, N₄, goes through a maximum value of 0.12±0.01 at x=0.5. The position of the maximum in N₄ is consistent with the cation potential for Sb³⁺, as observed for other systems. However, the low value of N₄ at this maximum is not so readily explained. The values are similar to those predicted if [BO₄]⁻ were stabilised by [SbO₄]⁺ but the trends with composition are different.     

Magnetic properties of xFe2O3(1−x)[B2O3 · PbO] glasses

The magnetic measurements performed on xFe₂O₃(1-x)[B₂O₃ · PbO] glasses show that for x 5 mol.% Fe₂O₃ the thermal variation of reciprocal susceptibility obeys a Curie behaviour. For higher iron content, at T 50 K, a nonlinear variation, typical for systems with random distribution of exchange interactions is observed. At greater temperatures than 50 K a Curie-Weiss behaviour is shown. The composition dependence of the Curie constants is analysed in correlation with the number of Fe³⁺ and Fe²⁺ ions as determined from Mössbauer effect measurements. A comparison with the data obtained in case of xFe₂O₃(1-x)[3B₂O₃ · PbO] glasses is made.     

Preparation and characterization of carbonate terminated polycrystalline Al2O3/Al films

X-ray photoelectron spectroscopy (XPS) was applied to investigate the surface reactivity of polycrystalline Al films in contact with a gas mixture of carbon dioxide and oxygen at room temperature. Based on the characterization of interactions between these substrates and the individual gases at selected exposures, various surface functionalities were identified. Simultaneously dosing both carbon dioxide and oxygen is shown to create surface-terminating carbonate species, which contribute to inhibiting the formation of an Al₂O₃ layer. Finally, a reaction scheme is suggested to account for the observed dependence of surface group formation on the dosing conditions.     

Electrogenerated chemiluminescence of chosen terbium complexes deposited into Al2O3 layer at the aluminium cathode

Cathodic electrogenerated luminescence of terbium(III)-(acetylacetonate)₃-1,10-phenanthroline, terbium(III)-(salicylate)₃ and terbium(III)-(salicylate)₃-1,10-phenanthroline complexes were studied. In this experiment terbium complexes were coated upon aluminium porous oxide layer by physical adsorption from methanolic or acetonate solution. The hexagonally ordered porous aluminium oxide has been prepared in a two-step anodization process in sulphuric acid solution. The primary step of cathodic ECL in this method is tunnel emission of hot electrons through barrier oxide layer. Electrochemiluminescence was achieved by recombination of the radical species, such as reduced ligand's aromatic moiety and strong oxidizing agent, i.e. sulphate radicals. This study was conducted to investigate ECL spectra, kinetic and integral ECL intensity relative to the porous aluminium oxide layer thickness.     

Sol-gel derived 6SrO·6BaO·7Al2O3 thin films using metal alkoxides

A novel 6SrO·6BaO·7Al₂O₃ (S6B6A7) thin film has been deposited onto soda lime float glass via sol-gel dip coating technique. The optical and electrical properties of S6B6A7 films annealed in air and H₂ atmosphere have been investigated. The structural and compositional properties of the S6B6A7 thin films have been investigated using Fourier transferred infrared spectroscopy (FT-IR) and X-ray photoelectron spectroscopy (XPS). The S6B6A7 films prepared using 5 (wt.%) sol and annealed at 450 °C in air and H₂ atmosphere exhibit an average transmittance of over ∼91% in wide visible range. The electrical properties of the S6B6A7 films affect film thickness as revealed by sheet resistance measurements. The sheet resistance of the 150 nm S6B6A7 films was 67.85 and 6.06 kilo ohms per square for air and H₂ annealed, respectively.     

关于MgB2/Al2O3超导薄膜电阻转变和各向异性的研究

利用电子束蒸发方法将MgB₂超导薄膜沉积到Al₂O₃(001)衬底上.采用标准的四引线法研究了磁场平行和垂直超导薄膜ab平面下的电阻转变.一个激活能模型 U(T,H)=U₀(1-T/(T_c+δ))ⁿ(1-H/H 关键词： 2/Al₂O₃')" href="#">MgB₂/Al₂O₃ 超导体 电阻转变 各向异性     

Morphological and optical properties of sol-gel derived 6SrO·6BaO·7Al2O3 thin films

A novel 6SrO·6BaO·7Al₂O₃ (S6B6A7) thin film deposited onto soda lime float glass via sol-gel dip coating technique is reported. The morphological and compositional properties of the S6B6A7 thin films have been investigated using scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS) revealing that the films were composed of S6B6A7 nanoparticles. The optical properties of the S6B6A7 films are affected by sol concentration, film thickness and annealing temperature as revealed by UV-vis transmittance. The transparency of S6B6A7 films improved on increasing annealing temperature up to 450 °C in air. The S6B6A7 films prepared using 2, 5, and 8 (wt.%) sols and annealed at 450 °C exhibit an average transmittance of over ∼91% in wide visible range.     

Phase transition in multiferroic YMnO3 and its solid solution YMn(0.93)Fe(0.07)O3

Ceramics of YMnO₃ and its Fe substituted YMn_(0.93)Fe_(0.07)O₃ solid solution were synthesized by solid state reaction of the oxides at 1200 °C. Hexagonal phase was identified in both cases by X-ray powder diffraction. Rietveld refinement of cell parameters showed an increase of the parameter values for the solid solution. Dielectric permittivity measurements versus temperature showed a phase transition at 655 °C for yttrium manganite, however, for the solid solution no phase transition was detected on heating up to 700 °C. Dielectric loss measurements showed higher slope changes and better defined local maxima for the solid solution than for the pure phase.     

Mg，Ti共掺Al2O3透明多晶陶瓷光谱性能研究

采用传统无压烧结工艺制备Mg，Ti共掺透明氧化铝陶瓷，测定了其吸收光谱、荧光光谱和激发光谱，结果表明，由于Mg²⁺的电荷补偿，当Ti掺入量较小时，Ti主要以Ti⁴⁺形式存在，(Mg，Ti):Al₂O₃透明陶瓷只在250nm的紫外波段有吸收峰，为O^2-→Ti⁴⁺的电荷转移跃迁产生的吸收，并产生Ti⁴⁺离子在280—290nm和410—420nm的荧光发射峰     

The mechanism of conversion of Al2O3 to AlN via carbothermal synthesis

Aluminium nitride (AlN) powder has been produced through carbothermal synthesis of alumina (Al₂O₃) powder and carbon. TEM is used to identify the nano-sized AlN grains that initiate on the surface of the Al₂O₃ grains during the first stage of the carbothermal synthesis cycle and to characterize the final product. Magic Angle Spinning NMR is coupled with TEM to identify the reaction sequence for the formation of the AlN.     

Electronic properties of thin films of laser-ablated Al2O3

Laser ablation coupled to mass quadrupole spectrometry (LAMQS) has been used to prepare thin films of aluminum oxide deposited on Si substrates starting from commercial Al₂O₃ polycrystalline targets. X-ray photoemission (XPS) and reflection electron energy loss spectroscopy (REELS) have allowed the investigation of the electronic properties of the produced films. In particular, it was found that the Al/O atomic ratio assumes a value very near to 0.7 (stoichiometric ratio) only for films deposited normally with respect to the target surface, while films grown at larger deposition angles are more rich in oxygen content.The composition, the mass density, the optical energy gap, the complex dielectric function and refraction index of the films have been calculated and compared with the results obtained from our starting target material and with the literature. The morphology of the deposited samples has been analyzed by the AFM technique.     

Enhanced fibroblast cell adhesion on Al/Al2O3 nanowires

Biological cells stick together via transmembrane proteins, which are linked to receptor molecules of the extracellular matrix (ECM). This specific biochemical adhesion plays a leading role in many cellular processes, among them cell differentiation, morphogenesis, and wound healing. Various medical applications require endogen cells to bind to an exogene substrate as in the case of an implant. Coatings with proteins that naturally belong to the ECM are known to enhance the cell adhesion. However, the choice of inorganic materials, which promote cell adhesion, is limited. Here, we report on a new engineered surface composed of Al/Al₂O₃ bi-phasic nanowires (NWs), which promotes the adhesion of fibroblast cells. Fibroblasts grow well on this inorganic layer and keep proliferating. Using the cell monolayer rheology (CMR) technique, we show that the adhesion of fibroblasts on Al/Al₂O₃ NWs is comparable to fibronectin coated surfaces. To our knowledge, this is one of the strongest cell adhesions on an inorganic surface, which has been reported on so far, since it compares to bio-organic layers such as fibronectin.     

Interfacial reactions and oxidation behavior of Al2O3 and Al2O3/Al coatings on an orthorhombic Ti2AlNb alloy

The uniform and dense Al₂O₃ and Al₂O₃/Al coatings were deposited on an orthorhombic Ti₂AlNb alloy by filtered arc ion plating. The interfacial reactions of the Al₂O₃/Ti₂AlNb and Al₂O₃/Al/Ti₂AlNb specimens after vacuum annealing at 750 °C were studied. In the Al₂O₃/Ti₂AlNb specimens, the Al₂O₃ coating decomposed significantly due to reaction between the Al₂O₃ coating and the O-Ti₂AlNb substrate. In the Al₂O₃/Al/Ti₂AlNb specimens, a γ-TiAl layer and an Nb-rich zone came into being by interdiffusion between the Al layer and the O-Ti₂AlNb substrate. The γ-TiAl layer is chemically compatible with Al₂O₃, with no decomposition of Al₂O₃ being detected. No internal oxidation or oxygen and nitrogen dissolution zone was observed in the O-Ti₂AlNb alloy. The Al₂O₃/Al/Ti₂AlNb specimens exhibited excellent oxidation resistance at 750 °C.     

Electronic structure of Al2O3 from electron energy loss spectroscopy

The electronic structure of Al₂O₃ has been studied by electron energy loss spectroscopy (ELS), and an energy level model of both filled and empty states has been constructed from the ELS and available optical data. For the high temperature pyrolytic α-polycrystalline Al₂O₃ films, the transitions are assumed to originate at the two principal peaks in the valence band density of states and the O(2s) core state, and to terminate on two peaks within the conduction band density of states. We also report energy loss spectra due to excitations out of the deeper Al(2p), Al(2s), Al(1s), and O(1s) core levels. The excitations originating at the Al(2p), Al(2s), and Al(1s) core levels terminate on levels in the conduction band and on an exciton lying about 1 eV below the conduction-band edge.     

Influence of the transparency of tunnel barriers in Nb/Al2O3/Al/Al2O3/Nb junctions on transport properties

The transparency of the tunnel barriers in double-barrier junctions influences the critical current density and the form of the current–voltage characteristics (IVC). Moreover, the barrier asymmetry is an important parameter, which has to be controlled in the technological process. We have performed a systematic study of the influence of the barrier transparency on critical current, I_C, and normal resistance, R_N, by preparing SIS and SINIS junctions under identical technological conditions and comparing their transport properties. We have fabricated Nb/Al₂O₃/Nb and Nb/Al₂O₃/Al/Al₂O₃/Nb devices with different current densities using a conventional fabrication process, varying pressure and oxidation time. The thickness of the Al middle electrode in all Nb/Al₂O₃/Al/Al₂O₃/Nb junctions was 6 nm. Patterning of the multilayers was done using conventional photolithography and the selective niobium etching process. The current density of SIS junctions was changed in the range from 0.5 to 10 kA/cm². At the same conditions the current density of SINIS devices revealed 1–100 A/cm² with non-hysteretic IVC and characteristic voltages, I_CR_N, of up to 200 μV. By comparing the experimental and theoretical temperature dependence of the I_CR_N product we estimated the barrier transparency and its asymmetry. The comparison shows a good agreement of experimental data with the theoretical model of tunneling through double-barrier structures in the dirty limit and provides the effective barrier transparency parameter γ_eff≈300. A theoretical framework is developed to study the influence of the barrier asymmetry on the current–phase relationship and it is proposed to determine the asymmetry parameter by measuring the critical current suppression as function of applied microwave power. The theoretical approach to determine the non-stationary properties of double-barrier junctions in the adiabatic regime is formulated and the results of calculations of the I–V characteristics are given in relevant limits. The existence and the magnitude of a current deficit are predicted as function of the barrier asymmetry.     

A study of GaN MOSFETs with atomic-layer-deposited Al2O3 as the gate dielectric

Accumulation-type GaN metal-oxide-semiconductor field-effect transistors (MOSFETs) with atomic-layer-deposited Al₂O₃ gate dielectrics are fabricated. The device, with atomic-layer-deposited Al₂O₃ as the gate dielectric, presents a drain current of 260 mA/mm and a broad maximum transconductance of 34 mS/mm, which are better than those reported previously with Al₂O₃ as the gate dielectric. Furthermore, the device shows negligible current collapse in a wide range of bias voltages, owing to the effective passivation of the GaN surface by the Al₂O₃ film. The gate drain breakdown voltage is found to be about 59.5 V, and in addition the channel mobility of the n-GaN layer is about 380 cm²/Vs, which is consistent with the Hall result, and it is not degraded by atomic-layer-deposition Al₂O₃ growth and device fabrication.     

Cr4+在Al2O3多晶体中的光谱性能研究

采用传统无压烧结工艺制备Cr:Al₂O₃透明多晶陶瓷.测定了其退火前后的吸收光谱和荧光光谱，发现在Al₂O₃六配位的八面体结构中，Cr⁴⁺的荧光发射也处在1100—1600nm波段的红外区间，荧光发射峰位于1223nm附近，类似Cr⁴⁺在四面体中的发光行为.同时由于氧化铝晶格常数较小，晶体场强较强，使Cr⁴⁺:Al₂O_{3< 关键词： 4+')" href="#">Cr⁴⁺ 2}O₃透明陶瓷')" href="#">Cr:Al₂O₃透明陶瓷 光谱性质 八面体     

Al2O3增强的Co2-C98/Al2O3/Si异质结的光伏效应

随着能源危机的加剧,太阳能电池作为开发和利用太阳能的一种普遍形式, 日益受到世界各国的重视.随着太阳能电池向着高效率、薄膜化、无毒性和原材料丰富的方向发展, 单纯的硅系太阳能电池已经无法达到这样的要求,因此新的材料和工艺的开发利用迫在眉睫. 本文研究了碳材料在硅异质节上实现光伏效应的改善及其可能在太阳能电池上的应用. 采用脉冲激光沉积方法制备的Co₂-C₉₈/Al₂O₃/Si异质结构在标准日光照射 (AM1.5, 100 mW/cm²)条件下,可获得0.447 V的开路电压和18.75 mA/cm²的电流密度, 转换效率可达3.27%.通过电容电压特性和暗条件下的电输运性能测量, 证明了氧化铝层的引入不但对单晶硅的表面起到了物理钝化作用,减小了反向漏电流, 使异质结界面缺陷、界面能级和复合中心减少,还起到了场效应钝化作用, 增加了异质结界面的势垒高度,增加了开路电压,使异质结的光伏效应显著增强.     

石墨烯在Al_2O_3(0001)表面生长的模拟研究

基于密度泛函理论的广义梯度近似法,对用化学气相沉积法在蓝宝石(α-Al_2O_3)(0001)表面上生长石墨烯进行理论研究.研究结果表明:CH_4在α-Al_2O_3(0001)表面上的分解是吸热过程,由CH_4完全分解出C需要较高能量及反应能垒,这些因素不利于C在衬底表面的存在.在α-Al_2O_3(0001)表面,石墨烯形核的活跃因子并不是通常认为的C原子,而是CH基团.通过CH基团在α-Al_2O_3(0001)表面上的迁移聚集首先形成能量较低的(CH)_x结构.模拟研究(CH)_x对揭示后续石墨烯的形核生长机理具有重要意义.