Adsorption and surface diffusion of silicon growth species in silicon carbide chemical vapour deposition processes studied by quantum-chemical computations

The effect chlorine addition to the gas mixture has on the surface chemistry in the chemical vapour deposition (CVD) process for silicon carbide (SiC) epitaxial layers is studied by quantum-chemical calculations of the adsorption and diffusion of SiH₂ and SiCl₂ on the (000-1) 4H–SiC surface. SiH₂ was found to bind more strongly to the surface than SiCl₂ by approximately 100 kJ mol^?1 and to have a 50 kJ mol^?1 lower energy barrier for diffusion on the fully hydrogen-terminated surface. On a bare SiC surface, without hydrogen termination, the SiCl₂ molecule has a somewhat lower energy barrier for diffusion. SiCl₂ is found to require a higher activation energy for desorption once chemisorbed, compared to the SiH₂ molecule. Gibbs free energy calculations also indicate that the SiC surface may not be fully hydrogen terminated at CVD conditions since missing neighbouring pair of surface hydrogens is found to be a likely type of defect on a hydrogen-terminated SiC surface.     

Oxygen behavior on the platinum surface: A quantum-chemical modeling

The dissociation of molecular oxygen and the migration of O atoms over the (100) and (111) platinum crystal surfaces have been modeled by the density functional theory method within the generalized gradient approximation (GGA). It has been demonstrated that the barrier to dissociation of the dioxygen molecule on the (100) surface is lower than that on the (111) surface. Oxygen atoms migrate over the (100) surface more readily than over the (111) surface. On the basis of these data, it is suggested that the Pt(100) surface is most efficient for dioxygen activation.     

Formation of carbon nanotubes from a silicon carbide/carbon composite

The reaction of a SiC/C composite powder in an arcing plasma forms carbon nanotubes in good yield. Besides carbon nanotubes, a Si/C composite composed of β SiC covered with a shell of graphite is formed. The graphitic carbon surface layers of the carbon shell of this composite reacts further to form carbon nanotubes when heated to 600 °C. This process seems highly effective since only a small overall low weight loss, indicative for a complete carbon shell oxidation is observed by thermal analysis. The formation of the carbon nanotubes from SiC is unlikely since no SiO₂ has been found when heating the SiC/C core shell composite to its reaction temperature of 600 °C under O₂. The CNTs formed are of good quality with 3 to 6 concentric walls and high aspect ratio. Occasionally even single walled carbon naotubes have been observed.     

Interaction of oxygen with the platinum surface: A quantum-chemical modeling

The interaction of oxygen with the (111), (110), and (100) platinum crystal surfaces has been modeled by the density functional theory method within the generalized gradient approximation (GGA). It has been demonstrated that the dissociative adsorption of a dioxygen molecule to all three types of surfaces is energetically favorable. The peroxide species are less stable than the dissociated ones, but they are also energetically favorable. There have been considered the relative stability of different structures involving one and several oxygen atoms, the mutual influence of the atoms on the surface, the adsorption energy as a function of the surface coverage, and adsorption onto the intrinsic surface defects.     

Quantum chemical modeling of the interaction of hydrogen atoms with the (111) surface of silicon

The interaction of a hydrogen atom with the (111) face of silicon was studied by the MNDO method in a cluster approximation. The energy of adsorption of a hydrogen atom as well as the values of the barriers for its incorporation and desorption from the surface layer of silicon were calculated taking into account its structure relaxation. It was found that the hydrogen atom can penetrate into the crystal through its surface cavities.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 28, No. 3, pp. 253–257, May–June, 1992.The authors wish to express their gratitude to P. A. Aleksandrova for fostering interest in the investigation and for her helpful suggestions.     

Quantum-chemical cluster modeling of the interaction of fluorine atoms with the (111) surface of silicon

The interaction of atomic fluorine with the Si(111) face was studied by the MNDO method. The energies of adsorption of the fluorine atoms on the surface as well as the values of the barriers to its incorporation and desorption from the subsurface layer of silicon were calculated taking into account the surface structure relaxation. It was found that a chemical bond is formed between the fluorine atom incorporated into the silicon and the adjoining surface silicon atom.Translated from Teoreticheskaya i Éksperimental'naya Khimiya, Vol. 28, No. 3, pp. 247–252, May–June, 1992.The authors wish to express their gratitude to P. A. Aleksandrova for fostering interest in the investigation and for her helpful suggestions.     

Semiempirical quantum-chemical calculations on the conformations of methyl formate and methyl thiolformate

The cis, trans, and gauche conformations of the methyl esters of formic and thiolformic acids have been investigated by different semiempirical methods. Total geometry optimization (CNDO/2, MINDO/3) and bond angle optimization (PCILO, NDDO) have been performed for the O-alkyl ester. The S-alkyl ester has been studied by the MINDO/3 method at the total geometry optimization level and by CNDO/2 and PCILO methods at the bond angle optimization level. The influence of sulphur d orbitals on the optimized molecular geometry as well as on the magnitude and direction of the dipole moment vector has been investigated in the CNDO/2 framework. The total energy differences of the conformers are compared to the experimental and ab initio results. CNDO/2 and NDDO energy partitioning have been performed to obtain information on the origin of the cis—trans energy difference and of the rotation barrier. The extent of the lone-pair delocalization has been studied in the different conformations using localized molecular orbitals. Calculations have been performed on the staggered and eclipsed positions of the methyl group in the planar conformations of both esters.     

Semiempirical and nonempirical quantum-chemical methods applied to the structure of P-substitute phosphaalkenes

Quantum-chemical studies have been performed on the structures of the phosphaalkenes RP = CH₂, in which the substituent R may have various electronic parameters; the nonempirical MO LCAO SCF method has been used with the OST-3G, OST-3G, 4-31G, 4-31G, 4-31G, and 4-31G(d) bases, as well as in the semiempirical MINDO approximation. The calculations with the 4-31G and 4-31G(d) bases give satsifactory values for the geometrical parameters and energies of the boundary MO. OST-3G is unsuitable for describing the energies of the MO, but MINDO can be used. The HOMO are of type, below which lie n-type MO. The gap between them for any R other than an alkyl group is increased by comparison with HP + CH₂. The P=C bond is appreciably polarized by R, particularly if it is capable of conjugation; the length varies little in this series because the resonance and polarization effects balance. The relative reactivities of the P-substituted phosphaalkenes in 1,2-addition reactions are discussed.Translated from Teoreticheskaya i Éksperimental'naya Khimiya Khimiya, Vol. 26, No. 5, pp. 547–555, September–October 1990.     

Thermodynamic and experimental study of the interaction of silicon and carbon monoxide: Synthesis of silicon carbide nanofibers

The reaction of crystalline silicon with carbon monoxide to produce silicon carbide was studied. Thermodynamic simulation of the equilibrium phase composition of the nSi-mCO system was carried out in the range 300–2000 K (27–1727°C). Conditions required for silicon carbide was carried out applying various experimental modes (n, m, and T) and possible pathways of the reactions were determined. Interaction between crystalline silicon and carbon monoxide formation in a temperature range of 1000–1450°C. The order of the reaction in CO was found to be close to unity. Silicon carbide nanofibers with thicknesses of from 5 to 100 nm were synthesized and characterized by powder X-ray diffraction, mass-spectral elemental analysis, and scanning electron microscopy. A possibility of synthesizing high-purity silicon carbide fibers were experimentally evaluated.     

Improved interfacial properties of PI composites through graphene oxide and carbon nanotubes on carbon fiber surface

Carbon nanotubes (CNTs) have been identified as excellent nanoreinforcements for carbon fiber (CF)–reinforced polymers regarding a wide range of engineering applications. The outstanding properties of CNTs, such as their large surface area, high mechanical strength, and low manufacturing cost bring them to be distinguished nanoreinforcements for carbon fiber–reinforced polymers to form multifunctional and multiscale composites. Electrophoretic deposition of graphene oxide for CNTs onto the CF surface was conducted. The presence of graphene oxide–CNTs may effectively increase both the roughness and wettability of the CF surface, resulting in an improvement to the interfacial bonding strength between the CF and the polyimide (PI).     

Platinum nanoparticles on different types of titanium dioxide surface: A quantum-chemical modeling

The interaction of a Pt₂₉ nanoparticle with pristine and reduced TiO₂ (110), (100), (101), and (100) surfaces in the rutile and anatase modifications has been modeled by the density functional theory method within the generalized gradient approximation (GGA). It has been demonstrated that the interaction energy of platinum particles with stoichiometric surfaces of titanium dioxide crystals is noticeably lower than for tin dioxide crystals. Like for SnO₂, the reduction of the surface leads in some cases to a significant increase in the energy of interaction with platinum. The reoxidation of such structures should result in platinum fixation on the surface.     

High surface area silicon carbide from rice husk: A support material for catalysts

Ultrafine -SiC with high surface area (150 m² g^–1) has been synthesized by inflight processing of charred rice husk in a r.f. plasma reactor operating at atmospheric pressure. The plasma-synthesized particles were doped with platinum (1%) and tested as a catalytic support material. The catalyst (1% Pt doped -SiC) showed 100% conversion of CO to CO₂ at a temperature as low as 175°C.     

Formation of silicon carbide nanotubes and nanowires via reaction of silicon (from disproportionation of silicon monoxide) with carbon nanotubes

One-dimensional silicon-carbon nanotubes and nanowires of various shapes and structures were synthesized via the reaction of silicon (produced by disproportionation reaction of SiO) with multiwalled carbon nanotubes (as templates) at different temperatures. A new type of multiwalled silicon carbide nanotube (SiCNT), with 3.5-4.5 A interlayer spacings, was observed in addition to the previously known beta-SiC (cubic zinc blende structure) nanowires and the biaxial SiC-SiO(x) nanowires. The SiCNT was identified by high-resolution transmission microscopy (HRTEM), elemental mapping, and electron energy loss spectroscopy (EELS). The multiwalled SiCNT was found to transform to a beta-SiC crystalline structure by electron beam annealing under TEM.     

Direct synthesis of aligned silicon carbide nanowires from the silicon substrates

Aligned silicon carbide nanowires were synthesized directly from the silicon substrates via a novel catalytic reaction with a methane-hydrogen mixture at 1,100 degrees C, with a mean diameter of 40 nm and length of 500 microm; they consist of a single-crystalline zinc blende structure crystal in the [111] growth direction; X-ray diffraction, Raman, and infrared spectroscopy confirm the synthesis of high-purity silicon carbide nanowires.     

Initial stage of the epitaxial assembly of graphene from silicon carbide and its simulation by semiemprical quantum chemical methods: Carbon face

The epitaxial growth of graphene on a singular carbon face of silicon carbide is simulated by semiempirical quantum chemical methods. It is shown that the main regularities of the growth of graphene on such a face, i.e., the sequence of surface reconstructions with a short spatial period (2 × 2) → (3 × 3) → graphene, are exhibited naturally during the analysis of various paths of graphene assembly and seeking the most probable path.     

Gravimetric determination of free carbon and silicon carbide in silica fume

Silica fume is formed as a by-product in the manufacture of silicon from quartzite. This paper describes an analytical method for the determination of free carbon and silicon carbide in silica fume. The silicon carbide was determined after removal of free carbon, amorphous silica, crystalline silica, graphite and silicon from the fume. The free carbon content was found to vary from 2 to 8% while the silicon carbide content ranged from 1 to 5%. X-ray diffraction, thermal analysis, scanning electron microscopy and Fourier Transform infrared spectroscopy were used to validate the steps used in the analytical procedure. The purpose of determining the free carbon and silicon carbide content of the fume is to help understand the efficiency of the reduction process and mechanism of the reaction.     

Semiempirical studies of inner-core energy levels: IX. Esca shifts of silicon atoms in various chemical environments by the scc-mo method

The semiempirical self-consistent charge molecular orbital (SCC-MO) method has been applied to a number of representative molecules involving Si atoms in various chemical environments. The calculated point charges were correlated with Si(2p) inner-core energy level shifts by using ground state potential, relaxation potential and transition potential models (GPM, RPM and TPM). The results are in good agreement with experimental data. Various contributions to the relaxation energy are briefly discussed.     

High-performance silicon nanowire array photoelectrochemical solar cells through surface passivation and modification

Nanowire solar cells: Pt nanoparticle (PtNP) decorated C/Si core/shell nanowire photoelectrochemical solar cells show high conversion efficiency of 10.86 % and excellent stability in aggressive electrolytes under 1-sun AM 1.5 G illumination. Superior device performance is achieved by improved surface passivation of the nanowires by carbon coating and enhanced interfacial charge transfer by PtNPs.