Nonlinear response and optical limiting in SrBi(2)Ta(2)O(9) thin films

SrBi(2)Ta(2)O(9) (SBT) thin films on quartz substrates were prepared by use of the pulsed-laser deposition technique. The nonlinear refractive indices, n(2) , of the SBT films were measured by use of z-scan techniques with picosecond pulses. Large negative nonlinear refractive indices of 3.84 and 3.58cm(2)/GW were obtained for the wavelengths 532 nm and 1.064mum , respectively. The two-photon absorption coefficient was determined to be 7.3 cm/GW for 532 nm. The limiting behavior of SBT thin film on a quartz substrate was investigated in an f/5 defocusing geometry by use of 38-ps-duration, 532-nm, 1.064mum laser excitation.     

Giant nonlinear optical properties of bismuth thin films grown by pulsed laser deposition

Thin films of Bi were grown by pulsed laser deposition on glass substrates at room temperature. The thickness and roughness of the films were characterized by grazing-incidence x-ray reflectivity, and the complex refractive indices were measured in the range from 1.5 to 4 eV by spectroscopic ellipsometry. We performed Z-scan measurements to study the third-order optical nonlinearity of the films. It was found that the Bi films exhibited an unusually large nonlinear refractive coefficient, n(I)~1.24x10(-1) cm(2)/kW and nonlinear absorption coefficient, alpha(I)~-3.97 cm/W , at low laser intensity, ~60 kW/cm(2) . This anomaly is believed to have an origin related to melting of the Bi films at the focus spot by the laser beam.     

Multilayer Au/TiO2Composite Films with Ultrafast Third-Order Nonlinear Optical Properties

We report on the ultrafast third-order optical nonlinearity in multilayer Au/TiO2 composite films fabricated on quartz substrates by pulsed laser deposition technique. The linear optical properties of the films are determined and optical absorption peaks due to surface plasmon resonance of Au particles are observed at about 590hm. The third-order optical nonlinearities of the films are investigated by z-scan method using a femtosecond laser （50 fs） at the wavelength of 800 nm. The sample showed fast nonlinear optical responses with nonlinear absorption coefficient and nonlinear refractive index being -3.66 × 10^-10 m/W and -2.95 × 10^-17 m^2/W, respectively. The results also show that the nonlinear optical effects increase with the increasing Au concentration in the composite films.     

Structural and optical properties of Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> ferroelectric thin films prepared by chemical solution methods

Ferroelectric Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films have been grown on Pt/Ti/SiO₂/Si substrates by chemical solution methods. X-ray diffraction analysis shows that BLT thin films are polycrystalline with (171)-preferential orientation. Atomic force microscopy investigation shows that they have large grains about 120 nm in size. A Pt/BLT/Pt capacitor has been fabricated and showed excellent ferroelectricity, with a remnant polarization and coercive field of 24 μC/cm² and 116 kV/cm, respectively. The capacitor shows no polarization fatigue up to 10⁹ switching cycles. The optical constants (n,k) of the BLT thin films in the wavelength range 0.35–1.7 μm were obtained by spectroscopic ellipsometry measurements, and the band-gap energy was found to be about 3.25 eV. Received: 16 October 2001 / Accepted: 6 January 2002 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-21/65830-734, E-mail: gswang@mail.sitp.ac.cn     

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00–2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10⁰–10^-3 Ω cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver–indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13–1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). PACS 73.30.+y; 81.15.Cd; 78.20.Ci; 73.61.Le     

脉冲激光沉积法制备钛酸锶钡薄膜及其光电性质

用脉冲激光沉积技术制备了钛酸锶钡(Ba0.5Sr0.6TiO3薄膜.用X射线光电子能谱和原子力显微镜分别分析了薄膜的化学组分和表面形貌.在交流信号为50 mV和100 kHz时测量了薄膜的介电系数和介电损耗随外加电场的变化关系,得出最高的介电可调率达到45%.利用单光束纵向Z扫描的方法研究了薄膜的非线性光学性质,得到非线性折射率为5.04×10-6cm2/kW,非线性吸收系数为3.59×10-6m/W,测量所用光源的波长为532 nm,脉宽为55 ps,表明Ba0.5Sr0.5TiO3薄膜有较快的非线性光学响应.     

CuO薄膜的三阶非线性光学特性研究

采用脉冲激光沉积技术在Si(100)和熔石英基片上制备了单相的CuO薄膜.通过X射线衍射仪,拉曼光谱仪,场发射扫描电镜和紫外可见光光度计对薄膜的结构,表面形貌和光学性质进行了表征. 场发射扫描电镜结果表明CuO薄膜中晶粒排列致密且分布均匀,其尺寸约为45nm.结合飞秒激光(800nm,50fs)和Z扫描方法测量了薄膜的三阶非线性光学特性,结果表明CuO薄膜具有超快的非线性光学响应且非线性折射率和非线性吸收系数均为负值,其大小分别为-3.96×10^-17 m^{2< 关键词： CuO薄膜 Z-扫描')" href="#">Z-扫描 三阶光学非线性}     

金属Fe薄膜的PLD制备及其非线性光学性质研究

采用脉冲激光沉积（PLD）技术在MgO基片上制备了金属Fe薄膜.利用原子力显微镜研究了不同制备温度对薄膜表面形貌的影响.x射线衍射分析表明沉积温度大于500℃时，Fe薄膜在MgO基片上有很好的结晶性，并有单一取向.通过z扫描方法测量了超薄Fe膜的光学非线性，得到了Fe薄膜的非线性折射率n₂＝709×10^-5cm²/ kW，非线性吸收系数 β＝-552×10^-3cm/W. 关键词： Fe薄膜 非线性 脉冲激光沉积     

Nonlinear two-photon absorption properties induced by femtosecond laser with the films of two novel anthracene derivatives

Two novel anthracene derivatives containing 4-vinylpyridine (FPEA) and 2-vinylpyridine (TPEA) poly(methyl methacrylate) films are prepared on quartz glass substrates. Their nonlinear absorption properties are investigated by using a 120-fs, 800-nm Ti:sapphire femtosecond pulsed laser operating at a 1-kHz repetition rate. The unique nonlinear absorption properties of these new compounds are observed by utilizing a Z-scan system. These two-photon absorption (TPA) properties are proven by the two-photon fluorescence excited at 800 nm. The FPEA and TPEA films have nonlinear TPA coefficients of 0.164 and 0.148 cm/GW and the TPA cross sections of 3.345 × 10-48 and 3.081 × 10-48 cm4 ·s/photon, respectively. The influence of the chemical structures on the nonlinear TPA properties of the compounds is also discussed. The highly nonlinear TPA activities of the films implied that the new anthracene derivatives are suitable materials with promising applications in super-high-density three-dimensional data storage and nano- or microstructure fabrication.     

Group-velocity-matched cascaded quadratic nonlinearities of femtosecond pulses in periodically poled MgO:LiNbO3

Large nonlinear phase shifts were generated with femtosecond pulses at 1560 nm through cascaded quadratic interactions in periodically poled MgO-doped LiNbO3. The off-diagonal component of the nonlinear coefficient was utilized for simultaneous quasi phase matching and group-velocity matching. The effective nonlinear refractive index was varied from -2.9 x 10(-14) to +3.3 x 10(-14) cm2/W by tuning the phase-mismatch conditions.     

Nonlinear optical characterization of LaEr(MoO<Subscript>4</Subscript>)<Subscript>3</Subscript> thin films using the <Emphasis Type="BoldItalic">Z</Emphasis> -scan technique

The nonlinear optical properties of thin films of LaEr(MoO₄)₃ were studied using a ∼30 ps Nd:YAG laser at 532 nm with a repetition rate of 250 Hz. Closed aperture Z-scan measurement revealed a negative nonlinearity in the LaEr(MoO₄)₃. The nonlinear refractive index γ=1.38×10^-10 cm²/W and nonlinear absorption coefficient β=16.8×10^-6 cm/W were calculated from the Z-scan data. The fluorescent upconversion spectra were recorded with 980 nm excitation. An optical switching mechanism based on nonlinear absorption is also presented experimentally. PACS 81.15.Fg; 77.84.Bw; 33.50.Dq; 42.70.Mp     

烘烤温度对溶胶-凝胶法制备镧掺杂钛酸铋薄膜结构与铁电性质的影响

采用溶胶-凝胶法，在保持薄膜结晶温度和有机物分解温度相同情况下，发现烘烤温度（即溶剂的挥发温度）对镧掺杂钛酸铋薄膜的晶体结构、表面形貌和铁电性质均产生重要影响.在较低烘烤温度下得到的薄膜（117）择优取向明显.但随着烘烤温度增加，薄膜的（117）择优取向逐渐减弱.薄膜的表面晶粒形貌则从棒状逐渐转变为盘状.还测量了薄膜的铁电性质，发现在250℃烘烤温度下得到的薄膜具有最大的剩余极化强度，2Pr为28.4μC/cm2.对实验现象进行了定性解释. 关键词： 溶胶-凝胶法 烘烤温度 铁电薄膜     

CdSyTe1-y多晶薄膜的制备及光谱表征

采用真空共蒸发法制备了CdSyTe1-y(0≤y≤1)多晶薄膜,并用X射线衍射谱(XRD)、能量色散谱(EDS)研究了CdSyTe1-y多晶薄膜的结构、组分。实验结果表明:石英振荡法监控的组分与EDS谱结果较为一致;当y<0·3时,CdSyTe1-y多晶薄膜为立方结构,当y≥0·3时,CdSyTe1-y多晶薄膜为六方结构。采用XRD线形分析法可计算出CdSyTe1-y多晶薄膜晶粒大小约20～50nm。最后,用紫外-可见-近红外谱(UV-Vis-NIR),测得300～2500nmCdSyTe1-y多晶薄膜的透过率曲线,并结合一阶Sellmeier模型的折射率色散关系,表征了CdSyTe1-y多晶薄膜的光学性质,获得了CdS0·22Te0·78多晶薄膜的光学厚度d～535nm,光能隙Eg～1·41eV,以及吸收系数α(λ)、折射率n(λ)等光学量。结果也表明,采用真空共蒸发法可以制备需要组分的CdSyTe1-y多晶薄膜,对CdSyTe1-y多晶薄膜光学性质的表征方法可推广到其他的半导体薄膜材料。     

Nonlinear optical absorption and refraction of epitaxial Ba0.6Sr0.4TiO3 thin films on (001) MgO substrates

Highly epitaxial Ba_0.6Sr_0.4TiO₃ (BST) ferroelectric thin films were fabricated on (001) MgOsubstrates by pulsed laser deposition. The nonlinear optical absorption coefficients (β) and refraction indices (γ) of the BST thin films on (001) MgO substrates were investigated using the single beam Z-scan technique with femtosecond laser pulses at the wavelengths of 790 nm and 395 nm, respectively, at room temperature. The nonlinear absorption coefficients of BST thin films were measured to be ∼0.087 cm/GW and ∼0.77 cm/GW at 790 nm and 395 nm, respectively. The nonlinear refraction indices of BST thin films exhibit a strong dispersion from a positive value of 6.1×10^-5 cm²/GW at 790 nm to a negative value of -4.0×10^-5 cm²/GW at 395 nm near band gap. The dispersion of γ is roughly consistent with Sheik-Bahae’s theory for the bound electronic nonlinear refraction resulting from the two-photon resonance. These results show that the BST film is a promising material as a candidate for nonlinear optical applications. PACS 42.70.Mp; 78.20.-e; 81.05.-t     

BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文)

我们利用激光分子束外延设备(L MBE)在MgO上外延生长了一系列BaNbxTi1-xO3(0 相似文献   

The effect of microwave annealing on the electrical characteristics of lanthanum doped bismuth titanate films obtained by the polymeric precursor method

Lanthanum doped bismuth titanate thin films (Bi_3.25La_0.75Ti₃O₁₂ - BLT) were produced by the polymeric precursor method and crystallized in a domestic microwave oven and in conventional furnace. Using platinum coated silicon substrates configuration, ferroelectric properties of the films were determined with remanent polarization P_r and a coercive field E_c of 3.9 μC/cm² and 70 kV/cm for the film annealed in the microwave oven and 20 μC/cm² and 52 kV/cm for the film annealed in conventional furnace, respectively. The films annealed in conventional furnace exhibited excellent retention-free characteristics at low infant periods indicating that BLT thin films can be a promise material for use in non-volatile memories. On the other hand, the pinning of domains wall causes a strong decay at low infant periods for the films annealed in the microwave furnace which makes undesireable the application for future FeRAMS memories.     

基于VO_2薄膜非致冷红外探测器光电响应研究

VO2 薄膜是非致冷微测辐射热红外探测器热敏电阻材料 .研究中应用微电子工艺制备了VO2 溅射薄膜红外探测器 ,在 2 96K的环境中测试了该探测器在不同的直流偏置、光调制频率下对 873K标准黑体源 8— 12 μm红外辐射的光电响应以及器件的噪声电压 ,在 10和 30Hz的调制频率下其响应率分别大于 17kV/W和接近 10kV/W .该探测器实现了探测率D 大于 1 0× 10 8cmHz/W ,热时间常量为 0 0 11s的 8— 12 μm非致冷红外探测     

Integrated optical Mach-Zehnder modulator based on polycrystalline BaTiO3

Good-quality polycrystalline BaTiO3 thin films are deposited on MgO substrates by pulsed laserdeposition. The deposition parameters are optimized to achieve optical-quality films with an attenuation coefficient of 4 dB/cm at the 633-nm wavelength. Thin-film electro-optic Mach-Zehnder modulators are fabricated with standard lithography and ion-beam etching. The waveguides patterned by lithography are the ridge type, and they ensure single-mode propagation in the wavelength range of 633-1550 nm. An electro-optic coefficient of 22 pm/V is estimated for the polycrystalline BaTiO3 films.     

The third-order optical nonlinearity of the stainless steel doped SrTiO_3 thin film grown by L-MBE

Stainless steel-doped SrTiO3 thin films were fabricated by laser molecular beam epitaxy (L-MBE). Nonlinear optical property of the thin film was measured by the single beam Z-scan technique at the wavelength of 532 nm. Two two-phonon absorption coefficient and nonlinear refractive index were determined to be 9.37 x 10-7 m/W and 1.55 x 10-6 esu, respectively. The merit figure T was calculated to be 1.8, satisfying condition T < 1 for an optical switch. The thin film has a very promising prospect for the applications in optical device.     

基于VO2薄膜非致冷红外探测器光电响应研究

VO₂薄膜是非致冷微测辐射热红外探测器热敏电阻材料.研究中应用微电子工艺制备了VO₂溅射薄膜红外探测器,在296K的环境中测试了该探测器在不同的直流偏置、光调制频率下对873K标准黑体源8—12μm红外辐射的光电响应以及器件的噪声电压,在10和30Hz的调制频率下其响应率分别大于17kV/W和接近10kV/W.该探测器实现了探测率D大于1.0×10⁸cm (Hz)^1/2/W,热时间常量为0.011s的8—12μm非致冷 关键词： 非致冷测辐射热探测器 红外探测器 二氧化钒 薄膜