Thin La2Zr2O7 films made from a water-based solution

Thin films of La₂Zr₂O₇ (LZO) are highly regarded as possible buffer layers in the coated conductor configuration. This report describes a new synthesis for thin crystalline LZO films, based on a largely water-based solution, mainly containing metal acetates, acetic acid and an organic amine-base: triethanolamine. Initially, a thin layer of amorphous material is deposited on the textured Ni-5 at%W substrate by means of dip-coating. Only by careful control of the thermal treatment can the layer be transformed into a crystalline layer. Important parameters in this respect are the heating rate and the dwell time. The amorphous gel is analysed by HR-TGA/DTA and HR-TEM. The textured layers are analysed by XRD, pole figures, RHEED, AFM and SEM.     

Thick lanthanum zirconate buffer layers from water-based precursor solutions on Ni-5%W substrates

In this work, water-based precursor solutions suitable for dip-coating of thick La₂Zr₂O₇ (LZO) buffer layers for coated conductors on Ni-5%W substrates were developed. The solutions were prepared based on chelate chemistry using water as the main solvent. The effect of polymer addition on the maximum crack-free thickness of the deposited films was investigated. This novel solution preparation method revealed the possibility to grow single, crack-free layers with thicknesses ranging 100–280 nm with good crystallinity and an in-plane grain misalignment with average FWHM of 6.55°. TEM studies illustrated the presence of nanovoids, typical for CSD–LZO films annealed under Ar-5%H₂ gas flow. The appropriate buffer layer action of the film in preventing the Ni diffusion was studied using XPS. It was found that the Ni diffusion was restricted to the first 30 nm of a 140 nm thick film. The surface texture of the film was improved using a seed layer.     

Sensor Performance of Nanostructured TiO<Subscript>2</Subscript>–SnO<Subscript>2</Subscript> Films Prepared by an Aqueous Sol–Gel Process

Nanostructured TiO₂–SnO₂ thin films and powders were prepared by a facile aqueous particulate sol–gel route. The prepared sols showed a narrow particle size distribution with hydrodynamic diameter in the range 17.2–19.3 nm. Moreover, the sols were stable over 5 months, since the constant zeta potential was measured during this period. The effect of Sn:Ti molar ratio was studied on the crystallisation behaviour of the products. X-ray diffraction analysis revealed that the powders were crystallised at the low temperature of 400 °C containing anatase-TiO₂, rutile-TiO₂ and cassiterite-SnO₂ phases, depending on annealing temperature and Sn:Ti molar ratio. Furthermore, it was found that SnO₂ retarded the anatase to rutile transformation up to 800 °C. The activation energy of crystallite growth was calculated in the range 0.96–6.87 kJ/mol. Transmission electron microscope image showed that one of the smallest crystallite sizes was obtained for TiO₂–SnO₂ binary mixed oxide, being 3 nm at 600 °C. Field emission scanning electron microscope analysis revealed that the deposited thin films had nanostructured morphology with the average grain size in the range 20–40 nm at 600 °C. Thin films produced under optimized conditions showed excellent microstructural properties for gas sensing applications. They exhibited a remarkable response towards low concentrations of CO gas at low operating temperature of 200 °C, resulting in increased thermal stability of sensing films as well as a decrease in their power consumption.     

A nitrilo-tri-acetic-acid/acetic acid route for the deposition of epitaxial cerium oxide films as high temperature superconductor buffer layers

A water based cerium oxide precursor solution using nitrilo-tri-acetic-acid (NTA) and acetic acid as complexing agents is described in detail. This precursor solution is used for the deposition of epitaxial CeO₂ layers on Ni-5at%W substrates by dip-coating. The influence of the complexation behavior on the formation of transparent, homogeneous solutions and gels has been studied. It is found that ethylenediamine plays an important role in the gelification. The growth conditions for cerium oxide films were Ar-5% gas processing atmosphere, a solution concentration level of 0.25 M, a dwell time of 60 min at 900 °C and 5-30 min at 1050 °C. X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM), pole figures and spectroscopic ellipsometry were used to characterize the CeO₂ films with different thicknesses. Attenuated total reflection-Fourier transform infrared (ATR-FTIR) was used to determine the carbon residue level in the surface of the cerium oxide film, which was found to be lower than 0.01%. Textured films with a thickness of 50 nm were obtained.     

Electrodeposition of CuGaSe<Subscript>2</Subscript> and CuGaS<Subscript>2</Subscript> thin films for photovoltaic applications

CuGaSe₂ and CuGaS₂ polycrystalline thin film absorbers were prepared by one-step electrodeposition from an aqueous electrolyte containing CuCl₂, GaCl₃ and H₂SeO₃. The pH of the solution was adjusted to 2.3 by adding HCl and KOH. Annealing improved crystallinity of CuGaSe₂ and further annealing in sulphur atmosphere was required to obtain CuGaS₂ layers. The morphology, topography, chemical composition and crystal structure of the deposited thin films were analysed by scanning electron microscopy, atomic force microscopy, energy dispersive spectroscopy and X-ray diffraction, respectively. X-Ray diffraction showed that the as-deposited CuGaSe₂ film exhibited poor crystallinity, but which improved dramatically when the layers were annealed in forming gas atmosphere for 40 min. Subsequent sulphurization of CuGaSe₂ films was performed at 400 °C for 10 min in presence of molecular sulphur and under forming gas atmosphere. The effect of sulphurization was the conversion of CuGaSe₂ into CuGaS₂. The formation of CuGaS₂ thin films was evidenced by the shift observed in the X-ray diffraction pattern and by the blue shift of the optical bandgap. The bandgap of CuGaSe₂ was found to be 1.66 eV, while for CuGaS₂ it raised up to 2.2 eV. A broad intermediate absorption band associated to Cr and centred at 1.63 eV was observed in Cr-doped CuGaS₂ films.     

Raman spectroscopic characterization of the microstructure of V2O5 films

The vanadium pentoxide (V₂O₅) films were deposited on silicon wafer by DC magnetron sputtering. By Raman scattering measurements, the microstructure properties of the V₂O₅ films prepared with different O₂–Ar gas flow ratios and annealed at different temperatures were studied, respectively. The results revealed that the increase of O₂–Ar gas flow ratio during sputtering was of advantage to prepare the V₂O₅ film with desired layer structure. A high post-annealing temperature (below 500 °C) induced the crystallization and the formation of the integrated structure of V₂O₅ film. However, it was found that both intensities of Raman scattering peaks at 146 cm^?1 and 994 cm^?1, respectively, decreased for samples annealed at a temperature of 550 °C. The peak at 146 cm^?1 was attributed to skeleton bent vibration and that at 994 cm^?1 was due to the stretching vibration of vanadyl V=O_A bond. It showed that the high-temperature annealing was believed to have distorted the microstructure of V₂O₅ films. The oxygen vacancies were, therefore, induced, which benefited the formation of V-O_A-V bonds between layers. The result of X-ray diffraction measurements was in good agreement with that of Raman scattering spectra.     

Preparation and nonlinear optical properties of Au nanoparticles doped TiO2 thin films

Nano-sized noble metal nanoparticles doped dielectric composite films with large third-order nonlinear susceptibility due to the confinement and the enhancement of local field were considered to be applied for optical information processing devices, such as optical switch or all optical logical gates. In this paper, sol–gel titania thin films doped with gold nanoparticles (AuNPs, ~10 nm in average size) were prepared. AuNPs were firstly synthesized from HAuCl₄ in aqueous solution at ~60 °C, using trisodium citrate as the reducing agent, polyvinylpyrrolidone as the stable agent; then the particle size and optical absorption spectra of the AuNPs in aqueous solutions were characterized by transmitting electron microscopy and UV–Vis–NIR spectrometry. Sol–gel 2AuNPs–100TiO₂ (in %mol) thin films (5 layers, ~1 μm in thickness) were deposited on silica glass slides by multilayer dip-coating. After heat-treated at 300–1,000 °C in air, the AuNPs–TiO₂ thin films were investigated by X-ray diffraction, scanning electron microscopy and atomic force microscopy. The nonlinear optical properties of the AuNPs–TiO₂ thin films were measured with the Z-scan technique, using a femtosecond laser (200 fs) at the wavelength of 800 nm. The third-order nonlinear refractive index and nonlinear absorption coefficient of 2AuNPs–100TiO₂ films were at the order of 10^?12 cm²/W, and the order of 10^?6 cm/W, respectively, and the third-order optical nonlinear susceptibility χ⁽³⁾ was ~6.88 × 10^?10 esu.     

Synthesis of highly pure nanocrystalline and mesoporous CaTiO3 by a particulate sol–gel route at the low temperature

The low temperature perovskite-type calcium titanate (CaTiO₃) thin films and powders with nanocrystalline and mesoporous structure were prepared by a straightforward particulate sol–gel route. The prepared sol had a narrow particle size distribution about 17 nm. X-ray diffraction and Fourier transform infrared spectroscopy revealed that, the synthesized powders had highly pure and crystallized CaTiO₃ structure with preferable orientation growth along (1 2 1) direction at 400–800 °C. The activation energy of crystal growth was calculated 5.73 kJ/mol. Furthermore, transmission electron microscope images showed that the average crystallite size of the powders annealed at 400 °C was around 3.5 nm. Field emission scanning electron microscope analysis and atomic force microscope images revealed that, the deposited thin films had uniform, mesoporous and nanocrystalline structure with the average grain size in the range 33–39 nm depending on annealing temperature. Based on Brunauer–Emmett–Teller (BET) analysis, the synthesized powders showed mesoporous structure with BET surface area in the range 51–21 m²/g at 400–800 °C. One of the smallest crystallite size and one of the highest surface areas reported in the literature is obtained which can be used in many applications, such as photocatalysts.     

XPS depth profiling investigations on La2Zr2O7 layers prepared by chemical solution deposition

La₂Zr₂O₇ (LZO) layers have been recently investigated as potential buffer layers for superconducting YBa₂Cu₃O_7–x coated conductors deposited on Ni tapes. Chemical solution deposition was used for LZO layer preparation. X-ray photoelectron spectroscopy (XPS) depth profiling is demonstrated to be an important method for layer characterization in addition to X-ray diffraction techniques. XPS measurements revealed layers that are homogeneous in depth, very smooth, and have no significant impurities. A slight difference to the nominal La:Zr stoichimetry is discussed in combination with structural defects that are suspected from spectral changes during ion sputtering.     

Role of reaction atmosphere in preparation of potassium tantalate through sol–gel method

Potassium tantalate (KT) thin films and powders of both K₂Ta₂O₆ (KT pyrochlore) and KTaO₃ (KT perovskite) structures were prepared by means of chemical solution deposition method using Si(111) with ZnO and MgO buffer layers as a substrate. The influence of reaction atmosphere on reaction pathway and phase composition for both KT powders, and KT thin films has been studied mainly by means of powder diffraction and infrared spectroscopy. When an oxygen flow instead of static air atmosphere has been used the process of pyrolysis in oxygen runs over much narrower temperature interval (200–300 °C), relatively to air atmosphere (200–600 °C) and almost no (in case of powders), or no (in case of thin films) pyrochlore intermediate phase has been detected in comparison with treatment in air, where the pyrochlore phase is stable at temperatures 500–600 °C (powders). KT perovskite phase starts to crystallize at temperatures 50° and 150 °C lower compared to air atmosphere in case of powders and thin films, respectively. Microstructure formed by near-columnar grains and small grains of equiaxed shape was observed in films treated in oxygen and air atmosphere, respectively.     

Low temperature nanostructured lithium titanates: controlling the phase composition, crystal structure and surface area

Low temperature lithium titanate compounds (i.e., Li₄Ti₅O₁₂ and Li₂TiO₃) with nanocrystalline and mesoporous structure were prepared by a straightforward aqueous particulate sol–gel route. The effect of Li:Ti molar ratio was studied on crystallisation behaviour of lithium titanates. X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR) revealed that the powders were crystallised at the low temperature of 500 °C and the short annealing time of 1 h. Moreover, it was found that Li:Ti molar ratio and annealing temperature influence the preferable orientation growth of the lithium titanate compounds. Transmission electron microscope (TEM) images showed that the average crystallite size of the powders annealed at 400 °C was in the range 2–4 nm and a gradual increase occurred up to 10 nm by heat treatment at 800 °C. Field emission scanning electron microscope (FE-SEM) analysis revealed that the deposited thin films had mesoporous and nanocrystalline structure with the average grain size of 21–28 nm at 600 °C and 49–62 nm at 800 °C depending upon the Li:Ti molar ratio. Moreover, atomic force microscope (AFM) images confirmed that the lithium titanate films had columnar like morphology at 600 °C, whereas they showed hill-valley like morphology at 800 °C. Based on Brunauer–Emmett–Taylor (BET) analysis, the synthesized powders showed mesoporous structure containing pores with needle and plate shapes. The surface area of the powders was enhanced by increasing Li:Ti molar ratio and reached as high as 77 m²/g for the ratio of Li:Ti = 75:25 at 500 °C. This is one of the smallest crystallite size and the highest surface areas reported in the literature, and the materials could be used in many applications such as rechargeable lithium batteries and tritium breeding materials.     

Mechanical and optical properties of SiO<Subscript>2</Subscript> thin films deposited on glass

The optical and mechanical properties of amorphous SiO₂ films deposited on soda-lime silicate float glass by reactive RF magnetron sputtering at room temperature were investigated in dependence of the process pressure. The densities of the films are strongly influenced by the process pressure and vary between 2.38 and 1.91 g cm^?3 as the pressure changes from 0.27 to 1.33 Pa. The refractive indices of the films shift between 1.52 and 1.37, while the residual compressive stresses in the deposited films vary in the range from 440 to 1 MPa. Hardness and reduced elastic modulus values follow the same trend and decline with the increase of process pressure from 8.5 to 2.2 GPa and from 73.7 to 30.9 GPa, respectively. The abrasive wear resistance decreases with the density of the films.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Effect of precursor sol pH on microstructural, optical and photocatalytic properties of vacuum annealed zinc tin oxide thin films on glass

Dip coated vacuum annealed zinc tin oxide thin films on soda lime silica glass have been deposited from the precursor sols containing zinc acetate dihydrate and tin (IV) chloride pentahydrate (Zn:Sn = 67:33, atomic ratio in percentage) in 2-methoxy ethanol by varying sol pH (0.85–5.5). Crystallinity, morphology, optical and photocatalytic properties of the films strongly depend on sol pH. Measurement of grazing incidence X-ray diffraction confirms the presence of hexagonal nano ZnO in the films derived from the sols of pH < 5.5. Film crystallinity deteriorates on increasing sol pH and the film deposited from the sol of pH 5.5 shows XRD amorphous but the selected area diffraction pattern and HRTEM image evidence the presence of nano Zn₂SnO₄ (size, 5–6 nm). Direct band gap energy of films increases on increasing sol pH. To visualize the film surface microstructure, FESEM study has been done and a rod-like surface feature is revealed in the film deposited from the sol of pH 2.85. A dependence of precursor sol pH on the photocatalytic activity of films towards degradation of Rhodamine 6G dye under UV (254 nm) irradiation is found and the highest decomposition rate constant, ‘k’ value is obtained from the film prepared from the sol of pH 5.5. The presence of zinc deficient nano Zn₂SnO₄ in the film may consider for generating the highest ‘k’ value. We also measure gelling time, viscosity of sols as well as UV and FTIR studies on the films and propose chemical reactions.     

The morphological,optical and electrical properties of SnO2:F thin films prepared by spray pyrolysis

Combining the spray pyrolysis and the sol–gel techniques gives the possibility to produce Fluorine doped Tin oxide (SnO₂:F) thin films. Transparent conducting SnO₂:F thin films have been deposited on glass substrates by the spray pyrolysis technique. This technique for the fabrication of SnO₂:F filmsby combining sol–gel process and the spray pyrolysis technique ispresented in this paper. The Sol–gel precursors have been successfully prepared using SnCl₂·5H₂O and (Ac)F₃. The structural, electrical, and optical properties of these films were investigated. The high resolution transmission electron microscopy (HRTEM) and selected area diffraction (SAD) patterns of SnO₂:F films show that the gel films lead to a tetragonal structure. The X‐ray diffraction pattern of the films deposited at substrate temperature 530° , the orientation of the films was predominantly [110]. In addition, the surface chemical components were also examined by X‐ray photoelectron spectroscopy (XPS) showing the SnO₂:F deposited with the atomic concentration ratios Sn/F 1.82:1. The minimum sheet resistance was 50 Ω and average transmission in the visible wavelength range of 300 to 800 nm was 87.25%. Copyright © 2008 John Wiley & Sons, Ltd.     

Chemical-Deposited Biaxially Textured Oxides YBCO,Y2O3 and LZO as Functional Layers for 2G HTSC Tapes

Moscow University Chemistry Bulletin - Abstract—2G HTSC tapes YBCO/LZO/Ni-5W and YBCO/Y2O3/LZO/Ni-5W with the minimum number of layers are obtained. Heteroepitaxial structures (layers...     

Synthesis of Cu2ZnSnS4 thin films by dip-coating method without sulphurization

Quaternary Cu₂ZnSnS₄ (CZTS) thin films, a promising absorber material for solar cells has been successfully deposited on glass substrates by cost effective simple dip-coating method without using either polluting chemicals or expensive vacuum facilities. X-ray diffraction pattern reveals the formation of CZTS films with tetragonal type kesterite structure. The Raman spectra of the prepared films exhibited resonance peaks corresponding to the CZTS phase. The scanning electron microscopic image shows the formation of films with smooth surface. The surface topography studied using atomic force microscope gives an rms roughness of 1.6 nm. The Hall effect studies indicate that the prepared films are p-type with a carrier concentration of 4.77 × 10²⁰ cm^?3. The energy dispersive X-ray analysis result indicate the presence of Cu, Zn, Sn and S in the film. The absorption coefficient was found to be the order of 10⁴ cm^?1 and the band gap has been found to be 1.5 eV.     

Structure and magnetic properties of La0.67Sr0.33MnO3 thin films prepared by sol–gel method

La_1?xSr_xMnO₃ (x = 0.33) (LSMO) thin films have been fabricated successfully by sol–gel method on two different types of substrates, Si (111) and SrTiO₃ (STO) (001). Microstructure and magnetic properties of LSMO thin films have been investigated. The X-ray diffraction studies of the films confirm the pure phase of the LSMO thin films. In contrast with LSMO thin films on Si substrate, the performances of LSMO on STO substrate are superior both from structural and magnetic properties. For the samples deposited on STO substrate, highly preferred orientation as well as less strain and grain defects was found; in other aspect, the magnetization, the residual and saturation moment value, tended greater while a decreased coercive field required merely (saturation moment value was about five times and coercive field was only about 13 % of those on Si substrate). The Curie temperature of LSMO thin films on Si and STO substrates is estimated to be about 349.7 and 359 K, respectively.     

Influence of sputter power on structural and electrical properties of TiO2 films for Al/TiO2/Si gate capacitors

Titanium dioxide (TiO₂) thin films were deposited onto p‐Si substrates held at room temperature by reactive Direct Current (DC) magnetron sputtering at various sputter powers in the range 80–200 W. The as‐deposited TiO₂ films were annealed at a temperature of 1023 K. The post‐annealed films were characterized for crystallographic structure, chemical binding configuration, surface morphology and optical absorption. The electrical and dielectric properties of Al/TiO₂/p‐Si structure were determined from the capacitance–voltage and current–voltage characteristics. X‐ray diffraction studies confirmed that the as‐deposited films were amorphous in nature. After post‐annealing at 1023 K, the films formed at lower powers exhibited anatase phase, where as those deposited at sputter powers > 160 W showed the mixed anatase and rutile phases of TiO₂. The surface morphology of the films varied significantly with the increase of sputter power. The electrical and dielectric properties on the air‐annealed Al/TiO₂/p‐Si structures were studied. The effect of sputter power on the electrical and dielectric characteristics of the structure of Al/TiO₂/p‐Si (metal‐insulator‐semiconductor) was systematically investigated. Copyright © 2014 John Wiley & Sons, Ltd.     

Synthesis and Characterization of Nanocrystalline MoSi2 by Mechanical Alloying and Heat Treating

In order to synthesize nanocrystalline MoSi₂, pure molybdenum and silicone powders were milled using an attritor mill with the molar ratio of Mo:Si being equal to 1:2. Mechanically alloyed (MAed) powders were heated in an atmosphere controlled furnace at various temperatures and holding times. The nanopowder characteristics were evaluated by field emission scanning electron microscopy, X-ray diffraction technique, and differential thermal analysis. The obtained results were compared for all prepared samples. The results did not confirm the presence of any related intermetallics after MA. However, Mo₅Si₃ was formed during heating at 900 °C. An increase in temperature caused the enhancement of the volume fraction of Mo₅Si₃ and formation of MoSi₂. Further heating at 1,100 °C caused the enhancement of the volume fraction of MoSi₂, while that of Mo₅Si₃ was decreased, as during heating at 1,100 °C for 7 h the volume fraction of Mo₅Si₃ was negligible.