NO(X~2∏_(1/2,3/2))v=1←0塞曼跃迁谱及其特性研究

根据塞曼效应理论和激光磁共振光谱技术（LMR）的基本原理，讨论了双原子分子2∏态的塞曼效应特性并导出了解释分子塞曼跃迁的简明代数拟合方程，用这些方程对14N16O（X2∏1/2.3/2）及15N16O（X2∏3/2）（U＝1←0）的LMR谱线进行数据拟合，得到塞曼跃迁上、下子能级的gJ因子值和二级塞曼效应因子k2.将按Hund耦合情形（a）及过渡情形（ab）的理论和拟合方程计算出的磁场位置分别与实验结果相比较，结果表明对NO分子而言，过渡情形（ab）能较真实反映它的耦合情况，且在较高强度磁场下，必须计及二级塞曼修正验证了采用上述代数拟合方程实现新分子LMR谱线标识和指认的可靠性，并提供了系统的处理方法．     

非定域位势e~(-μr)/r·e~(-μr'''')/r''''·e~(-αR)/R及e~(-μr)/r·e~(-μr'''')/r''''·e~(-(β(r+r'''')~(1/2)))·R)/R的Regge渐近行为

本文证明了两个物理上有兴趣的非定域位势(e~(-μr))/r·(e~(-μr′))/r′·(e~(-αR))/R及(e~(-μr))/r·(e~(-μr′))/r′·(e-(β(r+r′))~(1/2)·R/R的分波S矩阵元对动量变数k在除沿虚轴的割线(-∞i,0),(μi,∞i)的全平面,对角动量变数λ在右半平面Reλ>-1/2的半纯性和当k,λ分别趋于无穷大时的渐近性质。最后得到了Regge渐近行为。     

1.064微米Nd:YAG激光器与C0_2谱线的频率匹配

报道1.064μm Nd:YAG激光器振动频率与C0_2分子振动转动频谱谱线之间频率匹配的测量结果。谱线出现在Nd:YAG增益分布的中心附近,根据CO_2分子结构,可以推断谱线变窄。频率匹配的意义在于把频率作为Nd:YAG激光器绝对稳频的基准。     

铁电单晶(K_xNa_(1-x))_(0.4)(Sr_yBa_(1-y))_(0.8)Nb_2O_6的光学性质和线性电光效应

本文介绍铁电单晶(K_xNa_(1-x))_(0.4)(Sr_yBa_(1-y))_(0.8)Nb_2O_6的光学性质和线性电光效应的测量。实验结果表明,这种晶体具有较大的光学双折射,透光范围由4000A到5.6μm。晶体具有低的线性电光调制的半波电压,其电光调制价值指数n_0~3·γ_c高达730×10~(-12)m/V,而激光损伤阈值为600MW/cm~2(4 pps),表明该晶体可作为较大功率激光调制使用的材料。     

高温超导材料(Bi_(0.7)Pb_(0.3))_2Sr_2Ca_2Cu_3O_y的喇曼谱

本文报道了(Bi_(0.7)Pb_(0.3))_2Sr_2Ca_2Cu_3O_y 高温超导体的变温喇曼散射实验结果,并利用自旋量子对(magnon-pair)激发理论对其高频宽化峰进行了初步解释.高频宽化峰的获得说明Cu-O 面在高温超导机制中仍起重要作用,自旋量子对激发是高温超导产生的一个可能原因.散射中心峰位为1802—2080cm^(-1)范围,其相互作用交换常数 J 在667—770cm^(-1)范围内.     

Study of the process e~+e~- →π~+π~-π~0π~0 at energies s～(1/2)<1 GeV

In an experiment with the Spherical Neutral Detector at VEPP-2M collider the cross section of the process e+e-→π+π-π0π0 was measured.At energies s～(1/2)920 MeV this cross section was measured for the first time.The energy dependence of the cross section is well discribed by the vector dominance model with contributions from ρ,ρ,ρ mesons.The decay probability ρ→π+π-π0π0 was found to be Bρ =(1.60±0.74±0.18)×10-5.The upper limit for the decay ω→π+π-π0π0 was improved by two orders of magnitude compared to the previous measurements and is Bω 2×10-4 at 90% confidence level.     

α-Sexithiophene on Cu(1 1 0) and Cu(1 1 0)-(2 × 1)O: An STM and NEXAFS study

The adsorption of α-sexithiophene (6T) on Cu(1 1 0), Cu(1 1 0)-(2 × 1)O and the mesoscopically patterned Cu-O striped surface have been studied by STM (scanning tunnelling microscopy), XPS (X-ray photoelectron spectroscopy) and NEXAFS (near edge X-ray absorption fine structure). The molecular resolution of the STM allowed to determine the orientation and local order of the molecules in the submonolayer and monolayer regime. It is shown that the 6T molecules align with their long molecular axis along the densely packed copper rows on Cu(1 1 0) and along the Cu-O rows on the Cu(1 1 0)-(2 × 1)O surface. On the striped phase with alternating copper and Cu-O regions the molecules adsorb first on the Cu regions and after complete filling of these regions, on the Cu-O. The orientation is the same on both areas as on the respective pristine surfaces with the only exception that the molecules reorient by 90° if the width of the copper regions is smaller than the molecular length. The NEXAFS measurements allowed for a determination of the adsorption geometry of the molecules: while 6T lies flat on the surface on clean copper, the molecular planes are inclined with an angle as high as 39° with respect to the substrate on (2 × 1)O. For the latter, this inclination angle is 4° higher than in the bulk crystal structure of 6T observed for thicker films to release stress and allow commensurability with the substrate lattice, while for the former it is a result of the aromatic system bonding to the Cu(1 1 0) surface, as confirmed by XPS.     

~(14)N~(16)O分子X~2Π_(3/2)R(1.5)v=0→1及~(15)N~(16)O分子X~2Π_(3/2)Q(1.5)v=0→1跃迁的FLMR光谱

本文采用法拉弟效应的激光磁共振光谱技术，研究了－氧化氮分子１４Ｎ１６ＯＸ２Π３／２Ｒ（１．５）ｖ＝０→１和同位素分子１５Ｎ１６ＯＸ２Π３／２Ｑ（１．５）ｖ＝０→１跃迁的ＦＬＭＲ光谱，实验给出了样品浓度和信号强度之间的关系及调制磁场强度与ＦＬＭＲ信号强度之间的关系。     

介子的零点波函数和π_(μ2),K_(μ2)及1~-→e~ e~-衰变过程

本文基于文献[1]中提出的介子波函数与原始的层子弱流和层子电磁流,利用Bethe-Salpeter方程(以下简称B-S方程),尝试对0~-和1~-介子的零点波函数进行了讨论。文中给出了0~-,1~-介子的零点波函数与质量的关系:x_2(0)=A(1 bm),其中A,b是与质量无关的参数,m是相应介子的物理质量。这样一种函数形式可以解释π_(μ2),K_(μ2)和1~-→e~ e~-过程的几率。     

NO(3+1)共振增强的多光子离化谱

用皮秒脉冲高功率Nd∶YAG激光器抽运的光学参量发生/放大器作激发源,获得了NO分子在420～500 nm波长范围内的多光子离化谱,光谱图呈现分离谱的特征,表明在该波长区间NO分子以多光子共振方式离化。离化信号随激光强度的近四次方变化关系表明,在420～500 nm波长范围内NO分子吸收4个光子而离化。通过对谱线的标识,首次分离出NO分子以E 2Σ激发电子态为中间共振态的(3+1)多光子离化光谱序列,由谱线序列峰值波长得到NO分子E 2Σ电子态的振动常数,从而实现了采用多光子离化技术对该态能级结构的实验研究。     

First-principles study of thiophene on β-SiC (0 0 1)-(2×1) surface

In this work, we performed density functional calculations to examine the molecular adsorption states of thiophene on β-SiC(0 0 1)-2×1 surface. A number of possible adsorption geometries are considered into two groups as the polymeric thiophene chain and the individual molecules covalently bonded onto the surface. The results show that the polymeric chain on the surface is the less stable adsorption case and individual arch like adsorption case structure is more stable than others. In all adsorption cases, the adsorbed SiC surfaces are characterized as different semiconductors.     

IClB~3∏_(0~+)-X~1∑~+系统3-2带的实验研究

本文概述了我们在与M.A.A.Clyne等人完全不同的实验条件,对单次碰撞下的新生态产物ICl进行激光诱导荧光(LIF)实验研究工作。对激发谱的分析表明,我们可能从实验上发现了ICIB~3Ⅱ_(0+)—X~1∑~+系统3—2荧光发射带。根据实验结果,我们认为,ICIB~8Ⅱ~(0+)态的予离介可能发生在V＇≥4能级。而不是Clyne小组提出的“整个V＇=3能级都是予离解的”。     

Eu(TTFA)_3掺杂SiO_2杂化胶体球的合成及特性

采用改进的碱催化法和种子法分别制得了稀土配合物Eu(TTFA)3掺杂的SiO2杂化胶体球,并用透射电子显微镜和荧光分光光度计对其显微形貌和荧光光谱特性进行了详细地研究.结果表明,两种方法都可以获得单分散性的、稀土配合物掺杂SiO2杂化胶体球,且都具有Eu3+离子典型的荧光光谱特性.Eu(TTFA)3掺杂入SiO2胶体球中后,有机配体TTFA在短波长处的吸收明显增强了,最大的吸收峰位也向短波长方向移动大约20～30nm,Eu3+离子5D0→7F2发射跃迁仍然具有良好的窄线发光特征,同时荧光峰值的形态和位置受SiO2基体的影响发生轻微的变化.     

High-Resolution Spectroscopy of Jet-Cooled (32)SO(2) and (34)SO(2): The ã(3)B(1)-;X(1)A(1), 2(1)(0) and 1(1)(0) Bands

Laser-induced excitation spectra of the two bands ?(3)B(1)-;X(1)A(1), 2(1)(0) and 1(1)(0) of (32)SO(2) and (34)SO(2) have been recorded in a supersonic jet at a resolution of 0.015 cm(-1). The rotational and electron-spin fine structure has been analyzed for both isotopic species. Analysis of the rotational and electron-spin fine structure yields precise values of the rotational constants A, B, and C and the spin constants alpha and beta for both (32)SO(2) and (34)SO(2) in the states ?(3)B(1) (010) and (100). No interaction between these two vibrational states with any nearby triplet state is observed for rotational levels with J 相似文献   

Categorization of two-loop Feynman diagrams in the O(α~2) correction to e~+e~-→ ZH

The e~+e~-→ZH process is the dominant process for the Higgs boson production at the future Higgs factory.In order to match the analysis on the Higgs properties with highly precise experiment data,it will be crucial to include the theoretical prediction to the full next-to-next-to-leading order electroweak effect in the production rateσ(e~+e~-→ZH).In this inspiring work,we categorize the two-loop Feynman diagrams of the O(α~2) correction to e~+e~-ZH into 6 categories according to relevant topological structures.Although 25377 diagrams contribute to the O(a~2) correction in total,the number of the most challenging diagrams with seven denominators is 2250,which contain only 3 12 non-planar diagrams with 155 independent types.This categorization could be a valuable reference for the complete calculation in future.     

O(α_sv~2) correction to J/ψ plus η_c production in e~+e~- annihilation at s~(1/2)=10.6 GeV

Based on the nonrelativistic QCD factorization approach, O(αsv2) corrections to J/ψ plus ηc production in e+e-annihilation at √ s=10.6 GeV are calculated in this work. The numerical results show that the correction at αsv2order is only about a few percent of the total theoretical result. This indicates that the perturbative expansions become convergent and that a higher order correction will be smaller. The uncertainties from the long-distance matrix elements, renormalization scale and the measurement in the experiment are also discussed. Our result is in agreement with the previous result by Jia.     

Pb(Sc_(1/2)Nb_(1/2))O_3中有序-无序转变和铁电相变的Raman光谱研究

采用wolframite前驱物法制备了Pb(Sc1/2Nb1/2)O3陶瓷。通过调节陶瓷烧结工艺,获得了三种具有不同B位离子有序度的PSN陶瓷。测量了三种陶瓷样品在室温至160°C范围内的Raman光谱随温度变化。结果表明,随着温度的升高,三种不同B位有序度的陶瓷样品中,Raman光谱中位于530 cm-1的F2g模的峰位和半峰宽分别在100°C,85°C和80°C发生了突变,表明陶瓷分别在100°C,85°C和80°C三个温度点发生了铁电-顺电相变。上述结论得到了介电温度谱测量数据的支持。     

Bi_2Sr_2Ca(Cu_(1-x)Zn_x)_2O_(8 δ)单晶体的扫描隧道显微谱

198 6年 ,ＩＢＭ苏黎世实验室的两位科学家因研制成功扫描隧道显微镜 (ＳＴＭ )而被授予诺贝尔奖 ;同年 ,同是这个实验室的Ｂｅｄｎｏｒｚ和Ｍ櫣ｌｌｅｒ发现了铜氧化物高温超导体 ,为此 ,他俩于次年也获得了诺贝尔奖 .最近 ,来自美国加州大学的Ｐａｎ等利用ＳＴＭ完成了一项有关高温超导机理的重要研究 .他们的研究对象是Ｚｎ掺杂Ｂｉ - 2 2 12单晶体 .通过拓扑成像和隧穿谱的测量 ,研究者们发现 :在杂质原子Ｚｎ格点的周围存在“十字样”的局域杂质态———这是该效应被预言以来首次获得的实验观察 .尽管高温超导体的组分、结构复杂多样 ,…     

转动分辨的H2+ (X2Σ+g , v+=0-18)真空紫外脉冲场电离光电子谱

测量了氢气离子转动分辨的真空紫外脉冲场电离光电子谱．涵盖了15.30?18.09 eV能量范围内的H2+(X2§+g , v+=0?18,N+=0?5)?H2(X1§+g , v00=0, J00=0?4)的电离跃迁． 通过基于Buckingham-Orr-Sichel(BOS)模型的光谱拟合和对氢气离子振动带H2+(X2§+g ,v+=0?18)的转动光谱的分析, 发现实验上只观察到对应于￠N=N+-J00=0,§2的转动跃迁． 振动量子数v+ 越高，￠N=0的转动跃迁越占主导地位， 而转动谱线强度受邻