混晶（Rb_xK_（1－x））_2SnCl_6的相变研究

用非极性喇曼散射光谱研究了混晶（Ｒｂ_ｘＫ_（１－ｘ））_２ＳｎＣｌ_６性质随组份（０＜ｘ＜１）及温度（１０Ｋ＜Ｔ＜３００Ｋ）的变化。发现在纯Ｋ_２ＳｎＣｌ_６晶体中用Ｒｂ￣＋部分替代Ｋ￣＋后，将降低原Ｋ_２ＳｎＣｌ_６的相变温度Ｔｃｌ。当混晶中Ｒｂ￣＋成份超过极限浓度（ｘ＞０．７）后，该相变就被抑制。不同组份样品的同一喇曼模频率，随Ｒｂ￣＋的增加，向低频方向移动。用平均力常数拟合给出很好的理论解释。     

自发有序Ga_（0．5）In_（0．5）P合金的喇曼光谱研究

在室温和非共振条件下测量了自发有序Ｇａ０．５Ｉｎ０．５Ｐ合金的喇曼散射谱。测得的３８０，３６０和３３０ｃｍ－１附近的三个散射峰分别归结于合金中的类ＧａＰ的ＬＯ模、类ＩｎＰ的ＬＯ模和ＴＯＭ。发现有序合金的类ＧａＰ的ＬＯ模的声子频率随着合金的带隙能量的降低而增大。认为这与在有序合金中形成沿［１１１］方向的（ＧＳＰ）１／（ＩｎＰ）１单层超晶格有一定联系。在几种偏振配置下测得的有序合金的喇曼谱的偏振特性与通常的闪锌矿结构的半导体材料的偏振特性类似。     

化合物（Et_4N）_2［Pd_2（mp）_2（μ－mpH）_2］的NMR研究

采用１Ｈ－１ＨＣＯＳＹ，ＨＭＱＣ、ＨＭＢＣ等２ＤＮＭＲ技术对化合物（Ｅｔ４Ｎ）２［Ｐｄ２（ｍｐ）２（μ－ｍｐＨ）２］进行１Ｈ、１３ＣＮＭＲ谱数据分析与归属．表明它在ＤＭＳＯ溶液中仍保持原有固体状态的分子结构．     

2，4，6－三芳基－N－取代吡啶盐的~（13）CNMR研究

用￣（１３）Ｃ－￣１ＨＣＯＳＹ、２Ｄ－Ｊ分解谱并结合选择性质子去偶以及ＤＥＰＴ技术对２５个新的２，４，６－三芳基－Ｎ－取代吡啶四氟硼酸盐的￣（１３）ＣＮＭＲ谱进行了归属，讨论了影响化学位移的因素。     

BaFCl_xBr_（1－x）：Sm的发光研究

本文报道了ＢａＦＣｌｘＢｒ１－ｘ：Ｓｍ中Ｓｍ２＋、Ｓｍ３＋的光致发光、光激励发光和热释发光特征．讨论了基质组分对发光的影响及Ｓｍ２＋、Ｓｍ３＋的相对发光效率．发现Ｓｍ２＋的复合发光能力大于Ｓｍ３＋的复合发光能力，并从复合发光的过程及途径对这一现象进行了说明．     

用￣1H NMR法研究［Co（Xacac）＿2（Me－en）］ClO＿4的重氢化

应用￣１ＨＮＭＲ技术推定了新合成的二（３－取代Ｘ基－２，４－戊二酮）．Ｎ－甲基乙二胺合钴（Ⅲ）配合物：［Ｃｏ（Ｘａｃａｃ）＿２（Ｍｅ－ｅｎ）］ＣｌＯ＿４（Ｘ＝ＣＨ＿３、Ｃｌ、ＮＯ＿２）的Δ（Ｒ）∧（Ｓ）和Δ（Ｓ）∧（Ｒ）异构体的空间构型，测定了各配合物异构体手性配位氮原子上的重氢化速率常数ｋ＿Ｄ值（３４．０℃）．结果表明，取代基Ｘ对ｋ＿Ｄ值有着显著影响。     

以(NH_4)_2Ce(NO_3)_6氧化体系合成己二酰-1′,6′-双(4-卤偶氮苯)

以自制的己二酰-1′,6′-双(4-卤苯肼)化合物为原料,在室温条件下用(NH4)2Ce(NO3)6氧化体系氧化脱氢得3种己二酰-1′,6′-双(4-卤偶氮苯)化合物。产品的结构经元素分析、IR、1H NMR确证。产率在89%—93%之间。     

Si_（1－x）Ge_x／Si脊形波导X型分支器的研制

采用分子束外延方法制作低损耗Ｓｉ１－ｘＧｅ／Ｓｉ异质结脊形光波导,在Ｘ型交叉波导上实现了Ｓｉ１－ｘＧｅｘ／Ｓｉ光分支器的功能．设计中采用了ＳｉＧｅ大截面脊形波导的单模条件和交叉波导传输特性分析的结果．Ｘ型光分支器的实现为进一步研制Ｓｉ１－ｘＧｅｘ／Ｓｉ光开关和光电调制器积累了经验．     

Ln7O6（BO3）（PO4）2：Eu（Ln=Al,Gd,Y）的UVU—UV激发和辐射发光

本文报道了Ln7O6(BO3)(PO4)2:Eu(Ln=La,Gd,Y)在UVU－UV区的激发光谱及Eu^3 在可见区的发射光谱,其激发光谱包括基质在真空紫外区的激发带和激活剂离子在紫外区的Eu^3 -O^2-电荷迁移带,随着La^3 ,Gd^3 ,Y^3 离子半径逐渐减小,Eu^3 -O^2-电荷迁移带的重心位置逐渐向高能量方向移动,Gd7O6(BO3)(PO4)2:Eu和Y7O6（BO3）（PO4）2：Eu在真空紫外区的吸收与Eu^3 -O^2-电荷迁移带位于紫外区的吸收的比值要高于在La7O6(BO3)(PO4)2:Eu中的这个比值,激发能可被基质吸收,传递给激活剂离子,得到Eu^3 的红光发射,在Gd7O6(BO3)(PO4)2:Eu中,^5D0→^7F1的发射强度较强,在Y7O6（BO3）（PO4）2：Eu中,^5D0→^7F2和^5D0→^7F3的跃迁较强。     

六氯铅铵晶体相变的拉曼散射研究

在５Ｋ～３００Ｋ温度范围内对六氯铅铵晶体进行了拉曼散射测量，该晶体在Ｔｃ＝７８Ｋ发生从立方结构（Ｏ＾５４）至三方结构（Ｃ＾２３ｉ）的二级相变，ＰｂＣｌ＾２－６八面体Ａ１ｇ模和ＮＨ＾＋４四面体Ａ１模的拉曼频移在Ｔｃ时出现极大值，八面体Ｔ２ｇ模，四面体Ｔ２模和外振动Ｔ２ｇ模在Ｔｃ以下发生连续分裂，另外在Ｔｃ以下观测到对应于高温相ＰｂＣｌ＾２－６八面体Ｔ１ｇ模的软模。     

Antiresonance of Raman Scattering in CdSxSe1-x Mixed Crystals

Abstract

Resonant enhancement of the Raman scattering cross section in II - IV semiconductors has recently received much attention both theoretically and experimentally. All existing theories anticipate a monotonic increase in the scattering intensities when the scattering radiation energy approaches the direct-energy gap. Contrary to them in an early Raman study of CdS¹ a cancellation of scattering efficiencies for the two TO modes prior to the onset of the resonance was pointed out. In a latter work on pure CdS Damen et al.² found even a more pronounced “antiresonance” behavior of the nonpolar E₂ phonon at 41 cm^?1. Thus, this striking feature seems to be rather common for the Raman active modes in CdS for which no electrooptic contribution to the scattering amplitude exists. The experimental data were qualitatively explained by assuming a destructive addition between nonresonant and the weaker resonant terms in LoudoN′s expression for the first-order Raman tensor³. Consequently the cancellation energy difference /E_G - hw_L/ depends on the ratio of the resonant term to the nonresonant terms.     

Splitting of optical mode in (NH_4)_2 PtBr_6 studied by Raman scattering

Ｓｐｌｉｔｔｉｎｇｏｆｏｐｔｉｃａｌｍｏｄｅｉｎ（ＮＨ＿４）＿２ＰｔＢｒ＿６ｓｔｕｄｉｅｄｂｙＲａｍａｎｓｃａｔｔｅｒｉｎｇＳｐｌｉｔｔｉｎｇｏｆｏｐｔｉｃａｌｍｏｄｅｉｎ（ＮＨ＿４）＿２ＰｔＢｒ＿６ｓｔｕｄｉｅｄｂｙＲａｍａｎｓｃａｔｔｅｒｉｎｇ￥...     

Raman Study of Phonon Processes in CdSx Se1-x Mixed Crystals

The lattice vibrations of mixed crystals have been intensively studied for several years. Based on the Raman and infrared experiments, two extreme types of behavior of the q=O phonons have been reported. The “one-mode type” describes the situation when a unique frequency varying continuously with concentration is observed in each composition for any allowed mode. In addition the mode strength remains practically constant. In the “two-mode type” two bands for each allowed optic mode are observed, with frequencies characteristic for the two end-member crystals. The mode strength is proportional to the fractional weight of the respective component.     

掺杂晶体(NH_4)_(1-x)K_xNO_3、(NH_4)_(1-x)Na_xNO_3振动模的临界行为

掺杂晶体（ＮＨ４）１－ｘＫｘＮＯ３、（ＮＨ４）１－ｘＮａｘＮＯ３振动模的临界行为王焕茹吴国祯（清华大学物理系北京１０００８４）ＴｈｅＣｒｉｔｉｃａｌＢｅｈａｖｉｏｕｒｓｏｆｔｈｅＶｉｂｒａｔｉｏｎａｌＭｏｄｅｓｏｆＤｏｐｅｄ（ＮＨ４）１－ｘＫｘＮＯ...     

Studies on the SFD Properties of Nd_xGd_(1-x)Ca_4O(BO_3)_3 Solid-solution Crystal

1　Ｉｎｔｒｏｄｕｃｔｉｏｎ　　Ｉｎｔｈｅｐａｓｔｆｅｗｙｅａｒｓ,ｓｍａｌｌｓｉｚｅｄＳＦＤｌａｓｅｒｈａｓａｔｔｒａｃｔｅｄｇｒｅａｔａｔｔｅｎｔｉｏｎｓ.Ｌａｓｅｒｄｉｏｄｅ(ＬＤ)ｐｕｍｐｅｄｓｏｌｉｄｓｔａｔｅｌａｓｅｒｓｈａｖｅｂｅｅｎｆｏｕｎｄｖｅｒｙｕｓｅｆｕｌｉｎｔｈｅｆｉｅｌｄｓｏｆｍｉｌｉｔａｒｙ,ｉｎｄｕｓｔｒｙ,ｍｅｄｉｃａｌｔｒｅａｔｍｅｎｔａｎｄｓｃｉｅｎｔｉｆｉｃｒｅｓｅａｒｃｈｅｓｄｕｅｔｏｔｈｅａｄｖａｎｔａｇｅｓｏｆｈｉｇｈｓｔａｂｉｌｉｔｙ,ｃｏｍｐａｃｔｎｅｓｓ…     

拉曼光谱研究n型4H-和6H-SiC晶体的载流子浓度

半导体材料的纵光学声子与等离子体激元耦合模(LOPC模)能够提供材料电学方面的相关信息。本文在室温下测得了n型4H-和6H-SiC的拉曼光谱,分析了掺入的杂质对于SiC晶体拉曼光谱的影响,通过拟合n型4H-和6H-SiC晶体的LOPC模的线型得到等离子体频率,并由此从理论上计算了载流子浓度。载流子浓度的理论计算值与霍尔测量的结果符合得很好。研究结果进一步证实了对于n型4H-和6H-SiC晶体,可以通过分析LOPC模的线形来较准确地给出相关材料的载流子浓度。     

Ca3NbGa3Si2O14(CNGS)晶体的拉曼光谱分析

为了研究CNGS晶体的结构,构造了Ca3NbGa2SiO12和Ca3NbGaSi2O12两个团簇模型,对其构型进行优化并计算了振动频率.利用Raman光谱技术测量了该晶体的Raman光谱,依据理论计算结果对测得的Raman光谱进行了指认,讨论了CNGS晶体的层状结构和压电性能.     

High-mobility germanium p-MOSFETs by using HCl and(NH_4)_2S surface passivation

To achieve a high-quality high-κ/Ge interfaces for high hole mobility Ge p-MOSFET applications,a simple chemical cleaning and surface passivation scheme is introduced,and Ge p-MOSFETs with effective channel hole mobility up to665 cm2/V·s are demonstrated on a Ge(111) substrate.Moreover,a physical model is proposed to explain the dipole layer formation at the metal–oxide–semiconductor(MOS) interface by analyzing the electrical characteristics of HCl- and(NH4)2S-passivated samples.