Epitaxial oxide thin films by pulsed laser deposition: Retrospect and prospect

Pulsed laser deposition (PLD) is a unique method to obtain epitaxial multi-component oxide films. Highly stoichiometric, nearly single crystal-like materials in the form of films can be made by PLD. Oxides which are synthesized at high oxygen pressure can be made into films at low oxygen partial pressure. Epitaxial thin films of highT _c cuprates, metallic, ferroelectric, ferromagnetic, dielectric oxides, superconductor-metal-superconductor Josephson junctions and oxide superlattices have been made by PLD. In this article, an overview of preparation, characterization and properties of epitaxial oxide films and their applications are presented. Future prospects of the method for fabricating epitaxial films of transition metal nitrides, chalcogenides, carbides and borides are discussed.     

Thermokinetic study of CODA azoic liquid crystal and thin films deposition by matrix-assisted pulsed laser evaporation

Azoic dyes are compounds of interest from the point of view of their potential applications, such as the use of liquid crystals in optoelectronic and organic electroluminescent devices, or may be employed as template matrices for producing high-aspect ratio inorganic nanomaterials. Herein, 4-[(4-chlorobenzyl)oxy]-3,4′-dichloroazobenzene azoic dye, known as CODA, is selected as a choice compound among such materials due to its liquid crystalline properties and may be further used as nanostructured material in various applications. Thermokinetic study of CODA azoic dye thermal decomposition in air flow atmosphere was performed by employing thermogravimetric data; the kinetic parameters of the two decomposition steps were obtained under non-isothermal linear regimes, by means of multi-heating rates methods. Differential and integral “model-free” kinetic methods like Friedmann, Kissinger–Akahira–Sunose and Ortega, the invariant kinetic parameters method and the Perez-Maqueda et al. criterion (by Coats–Redfern and differential equations) were used. The kinetic study reveals very different behaviour related to the two decomposition steps of CODA, with complex processes composed of more than one kinetic mechanism for each of those, as indicated also by the Gotor et al. master plot method. Modern devices incorporating such materials tend to use them as thin films due to their specific properties; the CODA thin films were deposited on silicon substrates by matrix-assisted pulsed laser evaporation technique, using a Nd:YAG laser working at the wavelength of 266 nm. The preservation of the CODA compound after the transfer on the substrates was confirmed by Fourier transform infrared spectroscopy, while the morphology and topography of the deposited materials and of the thin film surfaces were investigated by atomic force microscopy and optical microscopy.     

In situ spectroelectrochemical behaviour of nanocrystalline TiO_2 thin films electrode fabricated by pulsed laser deposition

Nanocrystalline titanium oxide thin films have been successfully deposited on ITO coated glass by pulsed laser ablation of metallic Ti target in O_3/O_2 ambient gases. The intercalation of Li ions in the anatase TiO_2 film electrode is examined by cyclic vohammetry. The electrochromic behaviour of TiO_2 electrode is investigated by in-situ visible transmittance measurement, and two absorption bands at 420 and 650 nm are observed. The absorption falling and rising in color changing with excellent revisibility is relative to the insertion and deintercalation processes of Li ion. These resuits suggest that nanocrystalline titanium oxide films fabricated by pulsed laser deposition exhibit excellent spectroelectrochemical property.     

In situ spectroelectrochemical behaviour of nanocrystalline TiO2 thin films electrode fabricated by pulsed laser deposition

Nanocrystalline titanium oxide thin films have been successfully deposited on IT0 coated glass by pulsed laser ablation of metallic Ti target in 0₃/0₂ ambient gases. The intercalation of Li ions in the anatase TiO₂ film electrode is examined by cyclic voltammetry. The electrochromic behaviour of TiO₂ electrode is investigated byin-situ visible transmittance measurement, and two absorption bands at 420 and 650 nm are observed. The absorption falling and rising in color changing with excellent revisibility is relative to the insertion and deintercalation processes of Li ion. These results suggest that nanocrystalline titanium oxide films fabricated by pulsed laser deposition exhibit excellent spectroelectrochemical property. Project supported by the National Natural Science Foundation of China (Grant No. 29783001) and State Key Laboratory for Physical Chemistry of Solid Surface of Xiamen University (1997).     

Unexpected formation by pulsed laser deposition of nanostructured Fe/olivine thin films on MgO substrates

Olivine-type LiFePO₄ thin films were grown on MgO (1 0 0) substrates by pulsed laser deposition (PLD). The formation of an original nanostructure is evidenced by transmission electron microscopy measurements. Indeed, on focused ion beam prepared cross sections of the thin film, we observe, the amazing formation of metallic iron/olivine nanostructures. The appearance of such a structure is explained owing to a topotactic relation between the two phases as well as a strong Mg diffusion from the substrate to the film surface. Magnesium migration is thus concomitant with the creation of metallic iron domains that grow from the core of the film to the surface leading to large protuberances. To the best of our knowledge, this is the first report on iron extrusion from the olivine-type LiFePO₄.     

Pulsed laser ablation and deposition of thin films

Pulsed laser ablation is a simple, but versatile, experimental method that finds use as a means of patterning a very diverse range of materials, and in wide areas of thin film deposition and multi-layer research. Superficially, at least, the technique is conceptually simple also, but this apparent simplicity hides a wealth of fascinating, and still incompletely understood, chemical physics. This overview traces our current physico-chemical understanding of the evolution of material from target ablation through to the deposited film, addressing the initial laser-target interactions by which solid material enters the gas phase, the processing and propagation of material in the plume of ejected material, and the eventual accommodation of gas phase species onto the substrate that is to be coated. It is intended that this Review be of interest both to materials scientists interested in thin film growth, and to chemical physicists whose primary interest is with more fundamental aspects of the processes of pulsed laser ablation and deposition.     

Surface analysis of films and film systems produced by pulsed laser deposition

Ceramic films and film systems (ZrO₂ films, ZrO₂/Ti multilayers, and BN films) are deposited by pulsed laser deposition (PLD) and analyzed using X-ray photoelectron (XPS), Auger electron (AES), and micro-Raman spectroscopies. The electron spectroscopies are used to determine the film stoichiometry, the nature of the bonding, and to specify contaminant species. The micro-Raman spectroscopy gives information on crystal structure, grain size, and mechanical stress within the films. In ZrO₂ films a stoichiometry is achieved with typically 5%, with only weak dependencies on processing variables. The only contaminants are a small amount of water from the ambient gas and a carbonaceous surface layer. Multilayers consisting of alternating ZrO₂ and Ti layers exhibit a TiC contamination within the Ti layers. Depending on the processing variables, BN films may be nearly stoichiometric or may have significant, even dominant contaminations throughout the film from elemental B, B₂O₃, and/or a boron-oxynitride species. The first component is due to the non-stoichiometric material removal from the target (N-depletion) at low laser fluences, as confirmed by XPS measurements on irradiated targets. The second and third arise from H₂O in the ambient, and exhibit a complex dependence on processing variables. Micro-Raman spectra show only amorphous or hexagonalphase BN. Depending on the position on the substrate relative to the laser-induced vapour/plasma plume, there may be a particle deposition or mechanical stress within the films, as evidenced from large shifts (up to 15 cm^–1) of the Raman spectral peaks.     

XANES and XPS characterization of hard amorphous CSixNy thin films grown by RF nitrogen plasma assisted pulsed laser deposition

Amorphous carbon silicon nitride thin films were grown on (100) oriented silicon substrates by pulsed laser deposition (PLD) assisted by an RF nitrogen plasma source. Up to about 30 at. % nitrogen and up to 20 at. % silicon were found in the hard amorphous thin films by XPS in dependence on the composition of the mixed graphite / Si₃N₄ PLD target. The universal nanohardness was measured to be at maximum load force of 0.1 mN up to 23 GPa for thin CSi_xN_y films with reference value of 14 GPa for single crystalline silicon. X-ray photoelectron spectroscopy (XPS) of CSi_xN_y film surfaces showed a clear correlation of binding energy and intensity of fitted features of N 1s, C 1s, and Si 2p peaks to the composition of the graphite / Si₃N₄ target and to nitrogen flow through the plasma source, indicating soft changes of binding structure of the thin films due to variation of PLD parameters. Auger electron spectroscopy (AES) of Si KL₂₃L₂₃;¹D Auger transition gave a detailed view of bonding structure of Si in the CSi_xN_y films. The intensity of π* and σ* resonances at the carbon K-edge X-ray absorption near-edge structure (XANES) of the CSi_xN_y films measured at BESSY I corresponded to the nanohardness of the CSi_xN_y films, thus giving insight into chemical binding structure of superhard amorphous materials.     

Luminescence properties of Cu‐ion‐implanted and annealed ZnO thin films deposited by chemical vapor deposition and pulsed laser deposition

Ion implantation techniques were used to study the effect of an MgO additive on the luminescence properties induced by Cu in ZnO thin films. Cu ions (accelerating voltage of 75 keV, dose of 4.5 × 10¹⁴ ions/cm²) were implanted at room temperature in nondoped and Mg‐doped ZnO thin films. After annealing, emissions in the visible region originating from Cu phosphor were observed at 510 nm in CVD‐ZnO and at 450 nm in Mg‐doped ZnO (MZO) thin films. The Cu depth profile shows distortion in the low‐concentration region of CVD‐ZnO. After the annealing, the Cu implant was homogenized in thin films, and then the Cu concentration was determined to be 1.5 × 10¹⁹ ions/cm³ in CVD‐ZnO and 5.6 × 10¹⁸ ions/cm³ in MZO thin films. Copyright © 2005 John Wiley & Sons, Ltd.     

Si-doped carbon nanostructured films by pulsed laser deposition from a liquid target

Ablation of a silicone oil, Dow Corning's DC-705 with laser pulses of sub-ps duration in high vacuum is a novel approach to fabrication of Si-doped carbon nanocomposite films. Gently focused, temporally clean 700 fs pulses @ 248 nm of a hybrid dye/excimer laser system produce power densities of the order of 10¹¹–10¹² W cm^?2 on the target surface. The evolution of the chemical structure of film material is followed by comparing Fourier Transformed Infrared and X-ray Photoelectron spectra of films deposited at temperatures between room temperature and 250 °C. Despite the low thermal budget technique, in the spectrum of films deposited at room temperature the fingerprint of the silicone oil can clearly be identified. With increasing substrate temperature the contribution of the features characteristic of the oil gradually diminishes, but does not completely disappear even at 250 °C. This result is intriguing since the chance of oil droplets to survive in their original liquid form on the hot surface should be minimal. The results of the X-ray Photoelectron Spectroscopy suggest that the chemical structure of the film material resembles that of the oil. Both reflection mode optical microscopy and low magnification Scanning Electron Microscopy reveal that the films are inhomogeneous: areas of lateral dimensions ranging from a few to tens of micrometers, characterized by different contrasts can be identified. On the other hand, surface mapping by Scanning Electron and Atomic Force Microscopy unambiguously proves that all films possess a solid surface consisting of nanoparticles of less than 100 nm dimension, without the presence of any drop of oil. Possible explanations of the puzzling results can be that the films are polymers consisting mainly of the molecules of the target material, or composites of solid C:Si nanoparticles and oil residues.     

First-principles calculations of Cd-doped ZnO thin films deposited by pulse laser deposition

Zn_1−xCd_xO thin films are deposited on quartz substrate by pulse laser deposition. Their band structure and optical properties are experimentally and theoretically investigated. By varying Cd concentration, the band gap of Zn_1−xCd_xO films can be adjusted in a wide range from 3.219 eV for ZnO to 2.197 eV for Zn_0.5Cd_0.5O, which produces different emissions from ultraviolet to Kelly light in their photoluminescence spectra. Simultaneity, the electronic structure and band gap of Zn_1−xCd_xO are investigated by the density functional theory (DFT) with a combined generalized gradient approximation (GGA) plus Hubbard U approach, which precisely predicts the band-gaps of ZnO and Zn_1−xCd_xO alloys. Both the experimental results and theoretical simulation reveal that with increasing Cd concentration in Zn_1−xCd_xO alloys, their absorption coefficients in visible light range are evidently enhanced. The adjustable photoluminescence emission and enhanced visible light absorption endow Zn_1−xCd_xO alloys potential applications in optoelectronic and photocatalytic fields.     

High-resolution transmission electron microscopy investigation of nanostructures in SnO2 thin films prepared by pulsed laser deposition

Pulsed laser deposition (PLD) was used to grow nanocrystalline SnO₂ thin films onto glass substrates. The nanocrystallites and microstructures in SnO₂ thin films grown by PLD techniques have been investigated in detail by using X-ray diffraction and high-resolution transmission electron microscopy (HRTEM). The PLD process was carried out at room temperature under a working pressure of about 2×10⁻⁶ mbar. Experimental results indicate that thin films are composed of a polycrystalline SnO₂ and an amorphous SnO phase. In particular, the presence of such an amorphous SnO phase in the thin films greatly limits their practical use as gas-sensing devices. HRTEM observations revealed that SnO₂ nanocrystallites with tetragonal rutile structure embed in an amorphous SnO matrix, which are approximatively equiaxed. These approximatively equiaxed SnO₂ nanocrystallites contain a high density of defects, such as twin boundaries and edge dislocations. The grain growth of SnO₂ thin films may be discussed in terms of the coalescent particle growth mechanism.     

Synthesis of crystallized TaON and Ta3N5 by nitridation of Ta2O5 thin films grown by pulsed laser deposition

TaON and Ta₃N₅ thin films of different thicknesses were prepared by pulsed laser deposition of tantalum oxide followed by ex situ thermal nitridation under ammonia. The nitridation was carried out in flowing gas in the 600–800 °C temperature range. The dependence of tantalum oxynitride and nitride crystalline phases formation on nitridation reaction parameters was investigated. Structural and microstructural characteristics were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM).     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Chemically alternating langmuir-blodgett thin films as a model for molecular depth profiling by mass spectrometry

Langmuir-Blodgett multilayers of alternating barium arachidate and barium dimyristoyl phosphatidate are characterized by secondary ion mass spectrometry employing a 40 keV buckminsterfullerene (C60) ion source. These films exhibit well-defined structures with minimal chemical mixing between layers, making them an intriguing platform to study fundamental issues associated with molecular depth profiling. The experiments were performed using three different substrates of 306 nm, 177 nm, and 90 nm in thickness, each containing six subunits with alternating chemistry. The molecular subunits are successfully resolved for the 306 nm and 177 nm films by cluster ion depth profiling at cryogenic temperatures. In the depth profile, very little degradation was found for the molecular ion signal of the underneath layers compared with that of the top layer, indicating that the formation of chemical damage is removed as rapidly as it is formed. The resolving power decreases as the thickness of the alternating subunits decrease, allowing a depth resolution of 20 to 25 nm to be achieved. The results show the potential of LB films as an experimental model system for studying fundamental features of molecular depth profiling.     

Matrix-assisted pulsed laser evaporation of polyimide thin films and the XPS study

Compared with the traditional thin film techniques, the matrix-assisted pulsed laser evaporation (MAPLE) technique has many advantages in the deposition of polymer and organic thin films. It has a wide range of applications in many fields, such as non-linear optics, luminescent devices, electronics, various sensors. We have successfully deposited polyimide thin films by using the MAPLE technique. These films were characterized with XPS. The XPS spectra showed that the single-photon effect is ob-vious at low laser fluence and the chemical bonds will be broken, resulting in decomposition of the films. Contrarily, the single-photon effect will decrease and the multi-photon effect and the photothermal effect will increase at high laser fluence, resulting in the protection of the structure of the polyimide thin films and the obvious decrease in decomposition. High laser fluence is more suitable for the deposition of polymer and organic thin films than low laser fluence.     

Perovskite thin films deposited by pulsed laser ablation as model systems for electrochemical applications

Thin films of a bifunctional electrocatalyst with the compositions La_0.6Ca_0.4CoO_3−δ and La_0.7Ca_0.3CoO_3−δ have been deposited by a variation of pulsed laser deposition, i.e. pulsed reactive crossed-beam laser ablation. These perovskite phases have been used as catalysts for oxygen reduction and evolution in re-chargeable Zn/air batteries. The utilization of a synchronized reactive gas pulse with N₂O or O₂ allows the preparation of perovskite films with almost ideal oxygen content without additional annealing steps and to control the oxygen content of the films. The films with higher oxygen content reveal a lower resistivity. These compositions have been selected to study the influence of the texture on the electrocatalytical activity for oxygen reduction and evolution of the films. Amorphous films, or films with mixed or single orientation can be obtained by varying the target–substrate distance and substrate temperature without changing the composition of the films. A clear influence of the crystallinity on the catalytic activity, i.e. smaller overpotential for the two oxygen reactions, is observed. The amorphous films reveal the largest overpotential, followed by the polycrystalline films with one or more orientations, and the single crystalline films with (100) orientation.     

Characterization of thin alumina films prepared by metal-organic chemical vapour deposition (MOCVD) by high resolution SEM, (AR)XPS and AES depth profiling

Thin alumina films deposited by metal-organic chemical vapour deposition (MOCVD) on AISI 304 substrate have been analyzed using the combination of Scanning Electron Microscopy (SEM), Auger Electron Spectroscopy (AES) and Angle Resolved X-ray Photoelectron Spectroscopy (ARXPS). Both the surface and the alumina/substrate interface region have been analyzed in terms of chemical composition and elemental distribution. Only OH-groups (bounded as AlO(OH):boehmite) have been found as an impurity in the surface region of the oxide film. No carbon was detected. Due to higher temperature deposition, the concentration of OH-groups decreased. After annealing, the oxide/substrate interface changes as a result of chromium penetration into the alumina matrix. Carbon impurities have been detected on both delaminated and annealed alumina film surfaces. Also small amounts of sulfate groups as well as Ca and C impurities have been found on delaminated alumina film after prolonged high-temperature annealing.