GaAs半导体中的三光子吸收

本文从直接能隙半导体中三光子吸收跃迁速率的全量子理论表达式出发,在二能带和四能带理论模型下,分别就抛物线和非抛物线型能带,计算了GaAs半导体的三光子吸收系数。其结果与实验值作了比较。同时还给出了GaAs中三光子吸收系数的色散曲线。     

Ultrasensitive and high-dynamic-range two-photon absorption in a GaAs photomultiplier tube

We demonstrate improved efficiency and dynamic range for two-photon absorption at 1.5 microm in a photoelectron-counting GaAs photomultiplier tube. cw laser measurements show pure two-photon absorption occurring in the device from average powers of 1.3 microW to nearly 1 mW. We use the detector to implement an autocorrelator with peak-power x average-power sensitivity of 1.7 x 10(-4) (mW)(2) and discuss practical ways to reduce this figure of merit to as low as 1 x 10(-5) (mW)(2).     

Ultrafast three-photon counting in a photomultiplier tube

We demonstrate experimentally ultrafast three-photon counting by three-photon absorption in a GaAsP photomultiplier tube at the wavelength range of 1800-1900?nm, and analyze its sensitivity and time response. Pulse energy of ～500?fJ is shown to be detectable for ultrafast 170?fs pulses. The presented three-photon counter may serve as a unique tool for ultrafast quantum state characterization as well as for ultrasensitive third-order temporal measurements.     

负电子亲和势GaAs光电阴极中的三光子激发和发射的理论研究

将三阶微扰理论应用于单晶GaAs半导体,结合与实际相接近的能带结构,得到了GaAs中三光子吸收系数的解析式表达式,在考虑了激发电子的逃逸过程的情况下,进而推导了负电子亲和势GaAs光电阴极中三光子光电发射的发射系数的解析表达式.两表达式得到的理论数值分别与用ns量级脉宽、2.06μm波长的激光测得的GaAs中三光子吸收系数和GaAs(Cs,O)光电阴极中三光子发射系数的实验值相比较,吻合较好.     

All-optical switching with a biexcitonic double lambda system

A double lambda four-level system could be implemented with biexcitonic transitions on GaAs quantum well. We observed that the phase dependent biexcitonic transition could be explained by interference between one-photon and three-photon transition in a double lambda four-level system. An ultralow-light switch pulse could control 80% of biexcitonic absorption, which demonstrated all-optical switching with biexcitonic double lambda system.     

Multichannel selective femtosecond coherent control based on symmetry properties

We present and implement a new scheme for extended multichannel selective femtosecond coherent control based on symmetry properties of the excitation channels. Here, an atomic nonresonant two-photon absorption channel is coherently incorporated in a resonance-mediated (2+1) three-photon absorption channel. By proper pulse shaping, utilizing the invariance of the two-photon absorption to specific phase transformations of the pulse, the three-photon absorption is tuned independently over an order-of-magnitude yield range for any possible two-photon absorption yield. Noticeable is a set of "two-photon dark pulses" inducing widely tunable three-photon absorption.     

两种三光子吸收染料光限幅性能的实验研究

研究了两种新型D-π-D结构的芴类衍生物4-{7-[4-（二甲基胺）苯基]-9,9-二（2-乙基己基）-9H-芴-2-}-N,N-二甲基苯胺[缩写为B（DMAP）F]和4-{2-[7-（4-氨基苯乙烯基）-9,9-二（2-乙基己基）-9H-芴-2-]乙烯基}苯胺（缩写为BASF）在四氢呋喃（THF）和N,N-二甲基甲酰胺（DMF）中的线性吸收和单光子荧光行为,用脉冲宽度为38ps,重复频率为10Hz的1064nmNd;YAG脉冲激光研究了两种化合物的三光子吸收性质,结果表明：受溶剂效应的影响,两种化合物在极性较大的四氢呋喃溶剂中的最大线性吸收峰和荧光发射峰都有所红移;在极性较大溶剂中三光子吸收截面的数值较大,最高达到10^ -76cm^6S^2数量级。两种新材料还表现出明显的三光子吸收光限幅效应,当入射光强为8GW／cm^2时,B（DMAP）F和BASF的非线性透过率分别达到35％和39％。     

Three-Photon Absorption in InAs

Using 125 ps laser pulses, we observe three-photon absorption in room temperature InAs at a wavelength of 9.54 µm. This effect is readily identified by temperature-tuning the semiconductor bandgap through the three-photon absorption edge. A three-photon absorption coefficient of K₃ = 1 ± 0.6 × 10^-3 cm³ MW^-2 is extracted from non-linear absorption data obtained with an open-aperture Z-scan. Time-resolved measurement at high irradiance reveals an increase of absorption due to hot carriers. We also present an autocorrelation measurement of our CO₂ laser pulse that shows two complete optical free-induction-decay cycles.     

Broadly tunable single-frequency cw mid-infrared source with milliwatt-level output based on difference-frequency generation in orientation-patterned GaAs

A narrow-linewidth mid-IR source based on difference-frequency generation of an amplified 1.5 microm diode laser and a cw Tm-doped fiber laser in orientation-patterned (OP) GaAs has been developed and evaluated for spectroscopic applications. The source can be tuned to any frequency in the 7.6-8.2 microm range with an output power of 0.5 mW. The measured characteristics of the OP-GaAs sample demonstrate a high quality of the material.     

Optical parametric oscillation in quasi-phase-matched GaAs

We demonstrate an optical parametric oscillator (OPO) based on GaAs. The OPO utilizes an all-epitaxially-grown orientation-patterned GaAs crystal that is 0.5 mm thick, 5 mm wide, and 11 mm long, with a domain reversal period of 61.2 microm. Tuning either the near-IR pump wavelength between 1.8 and 2 microm or the temperature of the GaAs crystal allows the mid-IR output to be tuned between 2.28 and 9.14 microm, which is limited only by the spectral range of the OPO mirrors. The pump threshold of the singly resonant OPO is 16 microJ for the 6-ns pump pulses, and the photon conversion slope efficiency reaches 54%. We also show experimentally the possibility of pump-polarization-independent frequency conversion in GaAs.     

一种新型芴类衍生物的光谱及光限幅性能分析

利用Heck反应合成了一种新型的共轭长链的芴类衍生物,研究了它的线性和非线性光学特性。测试了它在石油醚、二氯甲烷、乙酸乙酯和二甲基甲酰胺(DMF)四种不同极性溶剂中的紫外吸收和荧光光谱特性,结果表明溶剂极性对新物质紫外吸收光谱和荧光光谱有一定程度的影响,随着溶剂极性的增加,吸收光谱和荧光光谱均红移。在激发波长为1064nm皮秒激光器作用下,测试了新物质的光学非线性——光限幅效应,结果显示其透射率随入射光强的变化呈现非线性降低,限幅效应明显。根据分析得出,此光限幅效应是由三光子吸收引起。通过数据拟合,得出了新物质的三光子吸收系数γ为5.4×10-21 cm3/W2及相应的三光子吸收截面σ′3为7.3×10-77 cm6.s2。     

Study on the three-photon properties of a triphenylamine derivative with three conjugated branches

Three-photon pumped frequency-upconversion fluorescence and nonlinear transmission properties of tris-[4-(2-{4-[5-(4-tert-butyl-phenyl)-[1,3,4]oxadiazol-2-yl]-phenyl}-vinyl)-phenyl]-amine (TPAD3) are studied using a Ti:Sapphire oscillator–amplifier system associated with an optical-parametric amplifier, which could specifically provide ～80 fs duration and 1175–1300 nm laser pulses for three-photon excitation. The dye shows very efficient three-photon pumped frequency-upconversion fluorescence and three-photon absorption at wavelengths from 1175 nm to 1300 nm. In our study, the beam intensity distribution is also taken into account. For the first time we give the analytical solution to nonlinear transmission of a three-photon absorption process when the incident beam has a Gaussian transverse spatial profile.     

n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency

Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz (93 microm or approximately 13 meV work function) is demonstrated by using a 1 x 10(18) cm(-3) Si-doped GaAs emitter and an undoped Al(0.04)Ga(0.96)As barrier structure. The peak responsivity of 6.5 A/W, detectivity of 5.5 x 10(8) Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV/cm at 6 K, while the detector spectral response range spans from 3.2 to 30 THz.     

Strong two-photon absorption at telecommunications wavelengths in nickel bis(dithiolene) complexes

The two-photon absorption spectrum of a nickel bis(dithiolene) complex with extended conjugation and pi-donor substitution is measured by using Z-scan and pump-probe techniques with femtosecond pulses over the spectral range from 1.20 to 1.58 microm, which includes much of the telecommunications range. The peak two-photon cross section of over 5000 GM (1 GM = 10(-50) cm4 s photon(-1) molecule(-1)) occurs at approximately 1.24 microm, with significant two-photon absorption (>440 GM) throughout the spectral range examined.     

Steady-state analysis of three-photon absorption spectra via density-matrix method in a three-coupled-quantum-well nanostructure

We numerically simulate three-photon absorption spectra in a three-coupled-quantum-well nanostructure interacting with a pump field,a coherent coupling field,and a probe field.We find that the three-photon absorption spectra can be dramatically influenced due to the intensities of the coupling field and pump field changing under the three-photon resonance condition.The effect of the frequency detuning of the pump field on the three-photon absorption spectra is also discussed.The study in our case is much more practical than the study in the case of its atomic counterpart in the sense of flexible design and the wide adjustable parameters.Thus it may open up some new possibilities for technological applications in optoelectronics and solid-state quantum information science.     

一种芴衍生物的三光子吸收光稳幅效应及三光子吸收拟合方法研究

由于忽略激光能量分布的不均匀性,当前常用的非线性透过率方法得到的三光子吸收系数的拟合误差比较大.现有材料的三光子吸收截面还比较小,阻碍了人们对三光子吸收特性的应用.本文提出了一种精确的三光子吸收拟合方法,适合于各种能量分布不均匀的激光脉冲.合成了一种具有三光子吸收特性的对称型芴类衍生物2,7-二(4-甲氧基苯乙炔)-9-硫酮芴,三光子吸收截面较大,具有很好的激光脉冲光稳幅特性.     

Two- and Three-Photon Linear Circular Dichroism in Semiconductors of Cubic Symmetry

Russian Physics Journal - The linear-circular dichroism of two- and three-photon absorption of light in semiconductors of hole conductivity with cubic symmetry is theoretically investigated. The...     

On the properties of photovoltaic X-ray detectors based on GaAs epitaxial structures

Operation of a new photovoltaic detector of X-ray bremsstrahlung based on GaAs epitaxial structures at room temperature without bias is studied. The efficiency of the absorbed energy conversion into short-circuit current is calculated from the measured photoresponses for the photon energies in the range from 12 to 120 keV. In this energy range, the absorption in GaAs is governed by photoelectric effect. The efficiency of the X-ray bremsstrahlung energy conversion in GaAs peaks at 80 keV. It is suggested that the X-ray absorption of a thin 50-μm detector can be enhanced by applying an inclined irradiation scheme. The effect is most pronounced in the region of hard X-rays.     

Higher-Order Antibunching of Light in Seven-Photon Interaction Process

Journal of Russian Laser Research - We study higher-order antibunching of light and the possibility of observing it in all modes in two and three-photon absorption seven-photon interaction...