Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics

Al_2O_3 and HfO_2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al_2O_3 layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×10~6 A/cm~2 and 3.22×10~6 A/cm~2 at+1V for the Al_2O_3/InAlAs and HfO_2/InAlAs MOS capacitors respectively.Compared with the HfO_2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al_2O_3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Q_(ot)) value and the interface state density(D_(it)).     

A12o3钝化及其在晶硅太阳电池中的应用

介绍了A1203的材料性质及其原子层沉积制备方法,详细阐述了该材料的钝化机制（化学钝化和场效应钝化）,并从薄膜厚度、热稳定性及叠层钝化等角度阐释其优化方案．概述了Al203钝化在晶体硅太阳电池中的应用,主要包括钝化发射极及背面局部扩散电池和钝化发射极及背表面电池．最后,对A1203钝化工艺的未来研究方向和大规模的工业应用进行了展望．     

Performance and reliability improvement of La_2O_3/Al_2O_3 nanolaminates using ultraviolet ozone post treatment

La-based binary or ternary compounds have recently attracted a great deal of attention as a potential candidate to replace the currently used Hf-based dielectrics in future transistor and capacitor devices for sub-22 generation. However, the hygroscopic nature of La₂O₃ hampers its application as dielectrics in electron devices. To cope with this challenge, ultraviolet (UV) ozone post treatment is proposed to suppress the moisture absorption in the H₂O-based atomic layer deposition (ALD) La₂O₃/Al₂O₃ nanolaminates which is related to the residual hydroxyl/hydrogen groups after annealing. The x-ray photoelectron spectroscopy (XPS) and conductive atomic force microscopy (AFM) results indicate that the moisture absorption of the H₂O-based ALD La₂O₃/Al₂O₃ nanolaminates is efficiently suppressed after 600 ℃ annealing, and the electrical characteristics are greatly improved.     

不同散射机理对 Al2O3/InxGa1-xAs nMOSFET 反型沟道电子迁移率的影响

通过考虑体散射、界面电荷的库仑散射以及 Al₂O₃/In_xGa_1-xAs 界面粗糙散射等主要散射机理, 建立了以 Al₂O₃为栅介质In_xGa_1-xAs n 沟金属-氧化物-半导体场效应晶体管 (nMOSFETs) 反型沟道电子迁移率模型, 模拟结果与实验数据有好的符合. 利用该模型分析表明, 在低至中等有效电场下, 电子迁移率主要受界面电荷库仑散射的影响; 而在强场下, 电子迁移率则取决于界面粗糙度散射. 降低界面态密度, 减小 Al₂O₃/In_xGa_1-xAs 界面粗糙度, 适当提高In含量并控制沟道掺杂在合适值是提高 InGaAs nMOSFETs 反型沟道电子迁移率的主要途径. 关键词： InGaAs MOSFET 反型沟道电子迁移率 散射机理     

杂质S对Fe/Al_2O_3界面结合影响的第一性原理研究

采用基于密度泛函理论的第一性原理平面波赝势方法,研究了杂质S对Fe/Al_2O_3界面结合的影响.计算结果表明:S在界面上Fe3原子处的界面偏析能最小,因此S易于向Fe3原子处偏析.Fe/Al_2O_3界面的结合主要受界面两侧Fe和O原子间相互作用控制.态密度、键重叠布居数和电子密度的计算结果均表明:S在界面处的偏析减弱了界面处Fe原子和O原子之间的相互作用,而且S的存在会引起Fe和O原子之间较强的静电排斥,这些导致了界面结合力的下降.研究结果可以使我们深入理解S在Fe-Cr-Al合金界面处的偏析造成氧化膜与合金基体结合减弱及氧化膜在S偏聚处剥离的机理.     

Al_2O_3薄层修饰SiN_x绝缘层的IGZO-TFTs器件的性能研究

采用原子层沉积工艺(ALD)生长均匀致密的三氧化二铝(Al2O3)薄层对氮化硅(Si Nx)绝缘层进行修饰,研究了铟镓锌氧薄膜晶体管(IGZO-TFTs)器件的性能。当Al2O3修饰层厚度为4 nm时,绝缘层-有源层界面的最大缺陷态密度相比于未修饰器件降低了17.2%,器件性能得到显著改善。场效应迁移率由1.19 cm2/(V·s)提高到7.11 cm2/(V·s),阈值电压由39.70 V降低到25.37 V,1 h正向偏压应力下的阈值电压漂移量由2.19 V减小到1.41 V。     

Improvement in electrical properties of high-κ film on Ge substrate by an improved stress relieved pre-oxide method

High-κ /Ge gate stack has recently attracted a great deal of attention as a potential candidate to replace planar silicon transistors for sub-22 generation. However, the desorption and volatilization of GeO hamper the development of Ge-based devices. To cope with this challenge, various techniques have been proposed to improve the high-κ /Ge interface. However,these techniques have not been developed perfectly yet to control the interface. Therefore, in this paper, we propose an improved stress relieved pre-oxide(SRPO) method to improve the thermodynamic stability of the high-κ /Ge interface. The x-ray photoelectron spectroscopy(XPS) and atomic force microscopy(AFM) results indicate that the GeO volatilization of the high-κ /Ge gate stack is efficiently suppressed after 500℃ annealing, and the electrical characteristics are greatly improved.     

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Atomic-layer-deposited(ALD) aluminum oxide(Al_2O_3) has demonstrated an excellent surface passivation for crystalline silicon(c-Si) surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al_2O_3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al_2O_3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al_2O_3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiN_x cap layer is prepared on Al_2O_3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.     

A self-driven photodetector based on a SnS2/WS2 van der Waals heterojunction with an Al2O3 capping layer

Photodetectors based on two-dimensional (2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum (CBM) matched self-driven SnS₂/WS₂ van der Waals heterojunction photodetector based on a SiO₂/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser illumination. This is attributed to the built-in electric field at the interface of the SnS₂ and WS₂ layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al₂O₃ layer is covered by the surface of the SnS₂/WS₂ photodetector to further improve the performance, because the Al₂O₃ layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.     

46.2W连续输出808nm高功率无铝半导体激光线阵模块

利用InGaAs/InGaAsP应变量子阱外延材料制作出高功率半导体激光器线阵模块,前腔面镀制了单层Al₂O₃,后腔面镀制了Al₂O₃/5(HfO₂/SiO₂)/HfO₂,采用无氧铜热沉和高效率的液体冷却器散热。在室温下,驱动电流50A时输出功率高达46.2W,最高电光转换效率41.3%,斜率效率1.15W/A。器件中心激射波长810nm,波长温度系数为0.28nm/℃,光谱半峰全宽(FWHM)₃nm,寿命突破11732h。     

Growth and magnetism of Ni nanoparticles in Ni/Al2O3/Si or Si3N4 multilayers

We report on the fabrication of Ni/Al₂O₃/Si and textured Ni/Al₂O₃/Si₃N₄ multilayers containing Ni nanoparticles that exhibit significantly improved results. The secondary phases arising from thermal reaction between Ni and Si can be remarkably suppressed with increasing layers of Al₂O₃ and deposition of Ni/Al₂O₃ multilayers on Si₃N₄ substrates. Atomic force microscopy shows the formation of large as well as nanoclusters of Ni when grown on Si, whereas textured Ni nanoparticles are formed on Si₃N₄ substrates. The magnetization measurements on Ni/Al₂O₃/Si containing a single buffer layer of Al₂O₃ shows higher coercivity field with magnetic nanowire-like behavior, whereas with several Al₂O₃ alternate layers almost a superparamagnetic-like behavior is observed. However, significantly improved magnetic hysteresis was observed in textured Ni/Al₂O₃/Si₃N₄ multilayers due to preferred alignment of Ni nanocrystallites.     

12CaO·7Al2O3/5CaO·3Al2O3：Sm3+新型红色荧光粉的制备及发光性质

采用自蔓延燃烧法制备了不同Sm³⁺掺杂浓度的12CaO·7Al₂O₃（C12A7：x%Sm³⁺）荧光粉。在404 nm近紫外光激发下,观察到了位于565,599,648 nm附近的3个光发射峰,分别归属于Sm³⁺的⁴G_5/2→⁶H_J/2（J=5,7,9）能级跃迁。随着Sm³⁺掺杂浓度增加,红光发射强度呈现了先增大后减小的规律,优化的Sm³⁺掺杂摩尔分数为1.5%,发光的浓度猝灭效应可归因于Sm³⁺之间发生了交叉弛豫过程。采取混相策略,通过降低初始粉体的煅烧温度至900℃获得了12CaO·7Al₂O₃/5CaO·3Al₂O₃：1.5%Sm³⁺（C12A7/C5A3：Sm³⁺）混相荧光粉,进一步提高了红光发射强度。利用变温光致发光谱计算得到混相样品的热激活能约为200 meV,结果表明该混相荧光粉具有良好的热稳定性。     

Fixed charge and interface traps at heterovalent interfaces between Si(1 0 0) and non-crystalline Al2O3–Ta2O5 alloys

Characterization by Auger electron spectroscopy (AES) and Fourier transformation infrared spectroscopy (FTIR) confirms (Ta₂O₅)_x(Al₂O₃)_1−x alloys are homogeneous pseudo-binary alloys with increased thermal stability with respect to end member oxides, Ta₂O₅ and Al₂O₃. Capacitance–voltage (C–V) and current density–voltage (J–V) data as a function of temperate show that the Ta d-states of the alloys act as localized electron traps, and are at an energy approximately equal to the conduction band offset of Ta₂O₅ with respect to Si.     

阻变存储器复合材料界面及电极性质研究

采用基于密度泛函理论的第一性原理对比研究了Cu（111）/HfO₂（001）,Cu（111）/HfO₂（010）,Cu（111）/HfO₂（100）三种复合材料界面模型的失配率、界面束缚能、电荷密度、电子局域函数以及差分电荷密度. 计算结果表明：Cu（111）/HfO₂（010）失配率最小,界面束缚能最大,界面体系相对最稳定;对比电荷密度及电子局域函数图显示,只有HfO₂（010）方向形成的复合材料体系出现了垂直Cu电极方向完整连通的电子通道,表明电子在此方向上具有局域性、连通性,与阻变存储器（RRAM）器件导通方向一致;差分电荷密度图显示,Cu（111）/HfO₂（010）复合材料体系界面处存在电荷密度分布重叠的现象,界面处有电子的相互转移、成键的存在;进一步计算了Cu（111）/HfO₂（010）体系距离界面不同位置的间隙Cu原子形成能,表明越靠近界面Cu原子越容易进入HfO₂ 体内,在外加电压下易发生电化学反应,从而导致Cu导电细丝的形成与断裂. 研究结果可为RRAM存储器的制备及性能的提高提供理论指导和设计工具. 关键词： 阻变存储器 复合材料 界面 电子通道     

Structural evolution of FexCo1−x/NM (NM=Ag, Cu, Al2O3) discontinuous multilayers by XAS

We discuss the specific features of the K-edge X-ray absorption spectroscopy (XAS) at the Fe and Co K-edges in Fe_xCo_1−x/NM discontinuous multilayers with NM=Ag, Cu, and Al₂O₃. Thermal treatments lead to the breakup of the layers forming a heterogeneous alloy with magnetic clusters of the FeCo embedded in a nonmagnetic (NM) matrix. Stabilization of the BCC phase of the FeCo alloy is directly evidenced by XAS. Differences among Fe and Co K-edge signatures indicate a strong dependence on the chemical nature of the absorbing atom for annealed samples. The amplitude of the extended X-ray absorption fine structure signal higher at the Co K-edge than at the Fe one reflect a smaller structural disorder in the Co environment. This behavior depends neither on the composition of the alloy nor on the NM material. In the case of Al₂O₃ a higher disorder around Fe atoms is observed also in the as-deposited sample. All these results indicate that the Fe segregates at the interface of the magnetic clusters/NM matrix after thermal annealing.     

氧化铟/聚(3,4-乙烯二氧噻吩)复合材料的微结构及其热电性能研究

通过化学氧化合成的方法将纳米In_2O_3复合到聚(3,4-乙烯二氧噻吩)(PEDOT)中得到In_2O_3/PEDOT复合材料.利用X射线衍射、红外光谱、电子显微镜及正电子湮没等方法对复合材料的微观结构进行了系统研究,同时对材料的热学和电学性能进行了表征.结果表明,当In_2O_3的含量在22 wt%以下时,In_2O_3能很好地分散到PEDOT基体中.热电性能测试则显示In_2O_3/PEDOT复合材料的导电率随In_2O_3含量增加明显增大.纯PEDOT的电导率仅为7.5 S/m,而含12.3 wt%In_2O_3的复合材料的电导率达到25.75 S/m.该复合材料相应的功率因子(68.8×10~(-4)μW/m·K~2)相对于纯的PEDOT(14.5×10~(-4)μW/m·K~2)提高了近4倍.另外,复合材料的热导率相对于纯PEDOT也有所降低.最终复合材料的热电优值由0.015×10~(-4)提高到了0.073×10~(-4).结果表明,In_2O_3/PEDOT复合材料的热电性能相对于纯PEDOT的热电性能得到了比较明显的提高.     

基于Al_2O_3/MoO_3复合阳极缓冲层的倒置聚合物太阳能电池的研究

采用旋涂Al_2O_3前驱体溶液和低温退火的方法在活性层上形成Al_2O_3薄膜,并与MoO_3结合形成Al_2O_3/MoO_3复合阳极缓冲层,制备了以聚3-己基噻吩:[6.6]-苯基-C_(61)-丁酸甲酯(P3HT:PC_(61)BM)为活性层的倒置聚合物太阳能电池,并通过改变Al_2O_3前驱体溶液的浓度来分析复合阳极缓冲层对器件性能的影响.结果发现,Al_2O_3/MoO_3复合阳极缓冲层能有效调控倒置聚合物太阳能电池的光电性能及其稳定性.当Al_2O_3前驱体溶液的浓度为0.15%时,器件光伏性能达到最优值,与MoO_3单缓冲层的器件相比,光电转换效率(PCE)由3.85%提高到4.64%;经过80天老化测试后,具有复合阳极缓冲层的器件PCE保留为初始值的76%,而单缓冲层的器件PCE已经下降到50%以下.器件性能得到改善的原因是Al_2O_3/MoO_3复合阳极缓冲层增强了倒置太阳能电池器件阳极对空穴的收集能力,同时钝化了器件活性层,从而提升了太阳能电池器件的光伏性能及其稳定性.     

聚乙二醇在Al2O3/水界面吸附行为的ESR研究

采用电子自旋共振技术结合自旋标记研究了聚乙二醇在Al₂O₃/水界面的分子构型和运动行为.结果表明,聚乙二醇在Al₂O₃上的吸附等温线呈S型,吸附量随聚乙二醇分子量增加而减小,聚乙二醇在Al₂O₃表面是多点吸附,分子中的大部分链节平躺在Al₂O₃表面、少部分链节伸向溶液。     

顶栅石墨烯离子敏场效应管的表征及其初步应用

传统的液栅型石墨烯场效应管虽然灵敏度高, 但是石墨烯沟道极易被污染, 致使器件的稳定性减小, 不能被重复利用. 为此, 我们设计制造了一种顶栅石墨烯离子敏场效应管, 以化学气相沉积生长的石墨烯为沟道, 通过原子层沉积在石墨烯表面沉积绝缘层HfO₂/Al₂O₃, 其中Al₂O₃作为敏感膜, HfO₂/Al₂O₃作为石墨烯及电极的保护膜. 经过一系列的电学表征和测试发现, 相较于液栅型石墨烯场效应管, 顶栅石墨烯场效应管具有更高的信噪比、更好的稳定性. 为了利用顶栅石墨烯进行生物分子的检测, 我们将单链DNA修饰在Al₂O₃表面, 成功检测到了修饰DNA前后的信号差异, 并结合荧光修饰的表征验证了顶栅石墨烯场效应管用于生物传感器的可行性.     

Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al2O3 gate dielectric

Monolayer-isolated silver (Ag) nanodots with the average diameter down to 7 nm are synthesized on Al₂O₃/Si substrate by vacuum electron-beam evaporation followed by annealing at 400 °C in N₂ ambient. Metal–insulator-silicon (MIS) structures with Ag nanodots embedded in Al₂O₃ gate dielectric are fabricated. Clear electron storage effect with the flatband voltage shift of 1.3 eV is observed through capacitance–conductance and conductance–voltage measurements. Our results demonstrate the feasibility of applying Ag nanodots for nanocrystal floating-gate memory devices.