高电荷密度聚苯乙烯微球的制备及胶体晶体组装

以甲基丙烯酸(MAA)为共聚单体,采用无皂乳液聚合法制备了单分散聚(苯乙烯-甲基丙烯酸)共聚微球,再在恒温恒湿条件下采用限制注射法制备出胶体晶体,最后对微球的组成、粒径大小及形态、表面电学性质、胶体晶体的显微形貌进行了测试分析。结果表明:制得的微球粒径均匀,球形度良好且呈单分散性,Zeta电势为–37.2mV;微球组装的胶体晶体排列有序,呈密堆积结构。     

Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 × 10⁴ s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms.     

Synthesis,characterization and conducting properties of novel poly (vinyl cinnamate)/zinc oxide nanocomposites via in situ polymerization

New polymer nanocomposite based on poly (vinyl cinnamate) (PVCin) with zinc oxide (ZnO) was synthesized by in situ polymerization of vinyl cinnamate with different concentrations of ZnO nanoparticles. The composite was characterized through FT-IR, FT-Raman, UV spectroscopy, XRD, HRTEM, FE-SEM, DSC, TGA and electrical conductivity studies. The IR, Raman and UV spectra ascertained the structural variation of PVCin network by the insertion of nanoparticles within the polymer segment. The morphological studies by TEM and FE-SEM photographs indicate that the nanopowder was uniformly dispersed in the polymer. The presence of nanoparticles in the nanocomposite was clearly observed from the XRD studies and the ordered arrangement of nanoparticles within the macromolecular chain of PVCin increased with increase in concentration of nanofillers. DSC results showed that the glass transition temperature and crystalline melting point were increased smoothly with the increase in concentration of nanoparticles. Analysis of TGA studies showed a significant increase in thermal stability with an increase in weight percentage of nanoparticles. The DC conductivity of nanocomposite was increased by ten orders of magnitude with the addition of 7 wt% of nano ZnO inclusion. AC conductivity, dielectric constant and dielectric loss tangent of nanocomposite was remarkably increased with increase in ZnO content up to 7 wt% of filler particles. Both AC and DC conductivity and dielectric properties were decreased beyond 7 wt% loading.     

Optical and electrical characterization of (Ga,Mn)N/InGaN multiquantum well light-emitting diodes

(Ga,Mn)/N/InGaN multiquantum well (MQW) diodes were grown by molecular beam epitaxy (MBE). The current-voltage characteristics of the diodes show the presence of a parasitic junction between the (Ga,Mn)N and the n-GaN in the top contact layer due to the low conductivity of the former layer. Both the (Ga,Mn)N/InGaN diodes and control samples without Mn doping show no or very low (up to 10% at the lowest temperatures) optical (spin) polarization at zero field or 5 T, respectively. The observed polarization is shown to correspond to the intrinsic optical polarization of the InGaN MQW, due to population distribution between spin sublevels at low temperature, as separately studied by resonant optical excitation with a photon energy lower than the bandgap of both the GaN and (Ga,Mn)N. This indicates efficient losses in the studied structures of any spin polarization generated by optical spin orientation or electrical spin injection. The observed vanishing spin injection efficiency of the spin light-emitting diode (LED) is tentatively attributed to spin losses during the energy relaxation process to the ground state of the excitons giving rise to the light emission.     

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (1 1 1) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

Current–voltage (I–V) characteristics of Au/PVA/n-Si (1 1 1) Schottky barrier diodes (SBDs) have been investigated in the temperature range 80–400 K. Here, polyvinyl alcohol (PVA) has been used as interfacial layer between metal and semiconductor layers. The zero-bias barrier height (Φ_B0) and ideality factor (n) determined from the forward bias I–V characteristics were found strongly dependent on temperature. The forward bias semi-logarithmic I–V curves for different temperatures have an almost common cross-point at a certain bias voltage. The values of Φ_B0 increase with the increasing temperature whereas those of n decrease. Therefore, we have attempted to draw Φ_B0 vs. q/2kT plot in order to obtain evidence of a Gaussian distribution (GD) of the barrier heights (BHs). The mean value of BH and standard deviation (σ₀) were found to be 0.974 eV and 0.101 V from this plot, respectively. Thus, the slope and intercept of modified vs. q/kT plot give the values of and Richardson constant (A^?) as 0.966 eV and 118.75 A/cm²K², respectively, without using the temperature coefficient of the BH. This value of A^* 118.75 A/cm²K² is very close to the theoretical value of 120 A/cm²K² for n-type Si. Hence, it has been concluded that the temperature dependence of the forward I–V characteristics of Au/PVA/n-Si (1 1 1) SBDs can be successfully explained on the basis of the Thermionic Emission (TE) theory with a GD of the BHs at Au/n-Si interface.     

Synthesis and characterizations of poly(3,6-thienophenanthrene) and poly(2,7-thienophenanthrene) and their applications in polymer light-emitting devices and solar cells

Here we report the synthesis of two novel phenylene-based polymers-poly(3,6-thienophenanthrene) (PTP36) and poly(2,7-thienophenanthrene) (PTP27) via base-free Suzuki–Miyaura reaction. The structure and electroluminescent properties of the meta-linked PTP36 and para-linked PTP27 are fully characterized. The obtained polymers were found to be liquid-crystalline, with broad band gap of 2.72 eV and 2.49 eV, respectively, which are much smaller than those of corresponding polyphenanthrenes. On the basis of PTP36 and PTP27, copolymers of 2,7-thienophenanthrene and 3,6-thienophenanthrene with 5,6-bis(octyloxy)-4,7-di(thiophen-2-yl)benzothiadiazole (DBT), namely PTP36-DBT and PTP27-DBT were prepared and be investigated as a potential donor material for polymer solar cells. The preliminary data show that the maximal power conversion efficiencies (PCEs) of the PTP27-DBT- and PTP36-DBT-based polymer solar cells are 3.5% and 0.9%, respectively.     

Luminescent cationic/neutral Cu(I) complexes for use in light-emitting diodes: Synthesis,structural characterization,DFT studies and properties

Cationic and neutral mononuclear Cu(I) complexes, [Cu(PPh₃)₂(PmH)]BF₄ (1a), [Cu(DPEphos) (PmH)]BF₄ (2a), [Cu(Xantphos) (PmH)]BF₄ (3a), [Cu(PPh₃)₂(Pm)] (1b), [Cu(DPEphos) (Pm)] (2b) and [Cu(Xantphos) (Pm)] (3b) (PPh₃ = triphenylphosphine, DPEphos = bis(2-diphenylphosphinophenyl)ether, Xantphos = 9, 9-dimethyl-bis(diphenylphosphino)xanthenes, PmH = 2-(pyridin-2-yl)benzimidazole, Pm=(2-(Pyridin-2-yl)benzimidazolate), have been prepared and characterized by IR, ¹H NMR, ¹³C NMR, ³¹P NMR, XRD, elemental analysis and X-ray crystal structure analysis. The structural analysis shows that each of Cu(I) complexes includes a tetrahedral [Cu(NN) (PP)]⁺ moiety, and temperature variation from 99 K to 298 K leads to the change of bonds lengths, angles and weak interactions. Meanwhile, theoretical calculations indicate that the differences between cationic and neutral Cu(I) complexes affect the composition of HOMO and LUMO orbitals, and the effect of temperature on Mülliken atomic charges is limited. Furthermore, neutral Cu(I) complexes 1b–3b show better luminescence in comparison to cationic Cu(I) complexes 1a-3a at room temperature, and temperature variations from 99 K to 298 K result in changing photoluminescence to some extent, which partly agrees with the related calculation results. In these cationic and neutral Cu(I) complexes, the maximum phosphorescent lifetime and quantum yield reach respectively 137 μs and 42% at room temperature. Moreover, cationic and neutral Cu(I) complexes are utilized to fabricate the monochromatic LEDs, showing favorable electroluminescence with the maximum EQE of 7.10%.     

The correlation of the electrical properties with electron irradiation and constant voltage stress for MIS devices based on high-k double layer (HfTiSiO:N and HfTiO:N) dielectrics

This paper describes the influence of e-beam irradiation and constant voltage stress on the electrical characteristics of metal-insulator-semiconductor structures, with double layer high-k dielectric stacks containing HfTiSiO:N and HfTiO:N ultra-thin (1 and 2 nm) films. The changes in the electrical properties were caused by charge trapping phenomena which is similar for e-beam irradiation and voltage stress cases. The current flow mechanism was analyzed on the basis of pre-breakdown, soft-breakdown and post-breakdown current-voltage (J-V) experiments. Based on α-V analysis (α=d[ln(J)]/d[ln(V)]) of the J-V characteristics, a non-ideal Schottky diode-like current mechanism with different parameters in various ranges of J-V characteristics is established, which limits the current flow in these structures independent of irradiation dose or magnitude of applied voltage during stress.     

Quantitative mobility spectrum analysis (QMSA) for hall characterization of electrons and holes in anisotropic bands

An extension of the quantitative mobility spectrum analysis (QMSA) procedure, which determines free electron and hole densities and mobilities from magnetic-field-dependent Hall and resistivity measurements, to materials exhibiting anisotropic conduction is presented. As test cases, the fully computer-automated procedure is used to analyze magnetotransport data from Bi thin films and Bi/CdTe superlattices. Using the results of the QMSA procedure, the thermoelectric properties of these films can be accurately modeled. As a second exmaple, an electron mobility anisotropy ratio of ≈4.5 is derived from the QMSA treatment of the Hall data for bulk Si samples.     

Photochemical Formation of Au/Cu Bimetallic Nanoparticles with Different Shapes and Sizes in a Poly(vinyl alcohol) Film

Metal nanoparticle (NP)–polymer nanocomposite thin films are attractive for applications in various devices. Since bimetallic NPs provide additional opportunities for tuning the physical properties of the NP components, the development of bimetallic NP nanocomposite thin films should lead to further enhancements of various applications. Au/Cu bimetallic NPs are fabricated in a poly(vinyl alcohol) (PVA) film using a photochemical process. Interestingly, different sizes and shapes of Au/Cu bimetallic NPs are formed in the PVA film, resulting in a uniquely patterned nanocomposite structure. It is determined that the different formation and growth mechanisms of NPs inside and outside the UV‐light irradiation spot leads to the differences in size and shape.