Studying the response of CR-39 and BD-100R detectors for neutron dosimetry in the light of ICRP-60 recommendations

The latest radiobiological findings show that the damage caused by the neutrons to human body is far greater than was previously thought. The International Commission on Radiological Protection, therefore, revised Q for neutrons and made recommendations in their Report No. ICRP-60 which have serious consequences for many operational neutron dosimetry services. The new recommendations include the reduction in dose limits from 50 mSv to 20 mSv per year, change in the quality factors and the dose estimation in some circumstances down to a few mSv per year. The overall effect of the ICRP-60 recommendations is to reduce the detection threshold in order to account for the reduction in the effective equivalent dose. We have studied the impact of ICRP-60 recommendations on the response of CR-39 based cubical neutron dosimeter and BD-100R bubble detector and the results obtained are presented in this article.     

Micromegas探测器计数曲线、增益以及能量分辨特性的研究

介绍了自行研制的Micromegas探测器的基本结构和工作原理. 在不同工作气体(Ar和CO₂)配比条件下,利用⁵⁵Fe放射源对该探测器的能量分辨、计数曲线和气体增益等特性进行了较为详尽的测试. 对相关结果进行了讨论. 关键词： Micromegas探测器 计数曲线 能量分辨率 增益     

Cu(100)表面c(2×2)-N原子结构与吸附行为研究

用密度泛函理论的总能计算研究了金属铜(100)面的表面原子结构以及氮原子的c(2×2)吸附状态.研究结果表明：在Cu(100) c(2×2)-N表面系统中，氮原子处于四度配位的空洞(FFH)位置，距离最表面铜原子层的垂直距离为0.20?，最短的Cu—N键长度为1.83?.结构优化的计算否定了被吸附物导致的表面再构模型，即c(2×2)元胞的两个铜原子在垂直于表面方向发生相对位移，一个铜原子运动到氮原子之上的模型.该吸附表面的功函数约为4.65eV, 氮原子的平均吸附能为4.92 eV(以孤立氮原子为能量参考点).计算结果还说明，Cu—N杂化形成的表面局域态的位置在费米面以下约1.0 eV附近出现，氮原子和第一层以及第二层铜原子均有不同程度的杂化作用.该结果为最近有关该表面的STM图像的争论提供了判据性的第一性原理计算结果. 关键词： Cu(100) c(2×2)-N 表面吸附态 密度泛函总能计算     

Cu(100) (2×22)R45°-O的表面结构与电子态的密度泛函研究

用第一性原理的总能计算研究了Cu(100))面的表面结构、弛豫以及氧原子的(2×22)吸附状 态.计算给出了Cu(100) (2×22)R45°-O吸附表面的结构参数，并得到了上述结构下氧吸附 的Cu(100)表面氧原子和各层Cu原子的电子态密度.计算得到的吸附表面功函数为4.58 eV ，与清洁Cu(100)表面功函数(～4.53 eV)几乎相同.吸附氧原子与最外层铜原子之间的垂直 距离约为0.02 nm，其能带结构体现出一定的金属性，同时由于Cu-O的杂化作用在费米能以 下约6.4 eV附近出现了局域的表面态.可以认为，在Cu(100) (2×22)R45°的氧吸附表面结 构下，吸附氧原子和衬底之间的结合主要来源于表面最外层铜原子与氧原子的相互作用. 关键词： Cu(100)(2×22)R45°-O表面 缺列再构 表面电子态     

Effect of water temperature on pulse duration and energy of stimulated Brillouin scattering

The water temperature has a strong effect on the kinematic viscosity, which is inversely proportional to the phonon lifetime and the gain coefficient. The higher the temperature is, the smaller the kinematic viscosity is, and the larger the phonon lifetime is. At a low pump power and a short focal length, we can derive a single-peak stimulated Brillouin scattering (SBS) pulse. The duration of this single-peak SBS pulse depends mainly on the phonon lifetime of water. With the increase of the water temperature, the duration of such a single-peak SBS pulse will become longer, and the SBS energy will become higher for the gain coefficient, which is related to the phonon lifetime. Therefore, varying the medium temperature can lead to the changes of SBS pulse duration and SBS energy.     

Effect of temperature on the phase behavior and microstructure of aggregates in SDS/Triton X-100/aH2O systems

The phase behavior and microstructure of a system containing polyoxyethylene tert-octylphenyl (Triton X-100), sodium dodecyl sulfate (SDS) and water were investigated using polarized optical microscopy (POM), differential scanning calorimetry (DSC) and small-angle X-ray diffraction (XRD). Phase-behavior study revealed that lamellar and hexagonal phases occurred in different compositions, and that lyotropic liquid crystal phases tended to form an H phase with increased Triton X-100 content. The effects of temperature on the phase behavior and microstructure of lyotropic liquid crystals were also studied. Heating induced a change from hexagonal to lamellar phase and from gel to hexagonal phase. POM and small-angle X-ray diffraction (SXRD) revealed that the phase-transition temperature of LLCs increased with increased Triton X-100 content, as further supported by DSC data.     

两维位置灵敏探测器的能量和动量响应函数刻度

用弹性散射对多通道(e,2e)谱仪两维位置灵敏探测器的能量和动量响应函数进行了刻度,从位置灵敏探测器输出的两维位置信息中获得了弹性散射的能谱和角度谱,估计了在当前实验条件下的能量分辨和角度分辨.同时,我们用正交多项式的最小二乘法拟合得到了谱仪单路的能量和动量响应函数.     

Molecular dynamics study on the effects of stamp shape, adhesive energy, and temperature on the nanoimprint lithography process

Molecular dynamics simulations of nanoimprint lithography (NIL) were performed to investigate the effects of three critical process parameters in NIL: stamp shape, adhesive energy between the stamp and polymer film, and imprint temperature. The proposed simulation model of the NIL process consists of an amorphous SiO₂ stamp with a line pattern, an amorphous poly(methylmethacrylate) film, and a Si substrate under the periodic boundary condition in the horizontal direction to simulate a real NIL process imprinting periodical line patterns. The behavior of polymer deformation and the effects of adhesion on pattern transfer were investigated by observing the deformation process, calculating the imprint and separation forces, and analyzing the density and stress distribution inside the polymer film. In addition, their dependency on the process parameters is also discussed with reference to the changes in pattern shape, adhesive energy between the stamp and polymer atoms, and imprint temperature of the polymer film. During the imprint process, the rectangular pattern shows inferior cavity filling and higher stress concentration compared to trapezoidal and triangular patterns because it requires much larger flow and deformation of the polymer film. Low imprint temperature also produces high stress concentration and large imprint force due to the lower fluidity of polymer film. In the separation process, the rectangular pattern generates the largest separation force and causes the most serious defects of the transferred pattern and even the polymer film, while the triangular pattern shows the most satisfactory pattern transfer. In addition, the adhesive energy between the stamp and the polymer film also strongly influences the adhesion between the stamp and the polymer film. Low adhesive energy reduces the separation force of the stamp and transferred pattern defects, and therefore enhances the quality of pattern transfer.     

Effect of surface viscosity,anchoring energy,and cell gap on the response time of nematic liquid crystals

An analytical expression for the relaxation time of a nematic liquid crystal is obtained for the first time by considering the influence of surface viscosity, anchoring energy strength and cell gap, validated numerically by using the so-called relaxation method. This general equation for the molecular response time (τ₀${\tau }_0$) was derived for a vertical aligned cell and by solving an eigenvalue equation coming from the usual balance of torque equation in the Derzhanskii and Petrov formulation, recovering the usual equations in the appropriate limit. The results show that τ∼d^b$\tau \sim d^b$, where b=2$b=2$ is observed only for strongly anchored cells, while for moderate to weak anchored cells, the exponent lies between 1 and 2, depending on both, surface viscosity and anchoring strength. We found that the surface viscosity is important when calculating the response time, specially for thin cells, critical for liquid crystal devices. The surface viscosity’s effect on the optical response time with pretilt is also explored. Our results bring new insights about the role of surface viscosity and its effects in applied physics.     

Effect of disaccharide,gamma radiation and temperature on the physico-mechanical properties of jute fabrics reinforced unsaturated polyester resin-based composite

The jute fabrics reinforced unsaturated polyester resin (jute/UPR)-based composites were prepared successfully by the hand-lay-up technique. The percentage of jute fabrics was kept constant at 40% fiber (by weight). The disaccharide percentage was also kept constant at 2% (by weight), but at this percentage the mechanical properties were lower than the untreated composites. Gamma radiation dose was varied at 0, 2.5, 5 and 7.5?kGy for jute/UPR-based composites. At 5.0?kGy gamma dose highest TS, TM and Eb were obtained. The jute/UPR-based composites were treated under 30°C, 50°C and ?18°C for the measurement of mechanical properties. At low temperature (?18°C), the highest mechanical properties were observed. The water uptake properties were measured for disaccharide-treated and disaccharide-untreated composites up to 10 days, but no water was absorbed by the composites. The soil degradation test was carried out under 12 inch soil containing at least 25% water, but no significant decrease was observed for untreated and sucrose-treated composites. For the functional group analysis, FT-IR was carried out. For the fiber matrix adhesion analysis, the scanning electron microscopic image was taken.     

Electrochemical investigation of the surface energy: Effect of the HF concentration on electroless silver deposition onto p-Si (1 1 1)

Electroless silver deposition onto p-silicon (1 1 1) from 0.005 mol l⁻¹ AgNO₃ solutions with different HF concentration was investigated by using an electrochemical direct current polarization method and open circuit potential-time (Ocp-t) technique. The fact that three-dimensional (3D) growth of silver onto silicon is favored with increasing the HF concentration was ascribed to the drop of the surface energy and approved by electrochemical direct current polarization, Ocp-t technique and atomic force microscopy (AFM). The drop slope of open-circuit potential, K_{−ΔE(OCP)/t}, was educed from the mixed-potential theory. K_{−ΔE(OCP)/t} as well as the deposition rate determined by an inductively coupled plasma atomic emission spectrometry (ICP-AES), increased with the HF concentration, yet was not a linear function. Results were explained by the stress generation and relaxation mechanisms.     

Influence of the surface-termination of hexagonal SiC(0 0 0 1) on the temperature dependences of Ge growth modes and desorption

With the aim of comparing initial Ge adsorption and desorption modes on different surface terminations of 4H-SiC(0 0 0 1) faces, 3 × 3, √3×√3R30° (R3) and 6√3×6√3R30° (6R3) reconstructions, of decreasing Si surface richness, have been prepared by standard surface preparation procedures. They are controlled by reflection high energy electron diffraction (RHEED), low energy electron diffraction and photoemission. One monolayer of Ge has been deposited similarly at room temperature on each of these three surfaces, followed by the same set of isochronal heatings at increasing temperatures up to complete Ge desorption. At each step of heating, the structural and chemical status of the Ge ad-layer has been probed. Marked differences between the Si- (3 × 3 and R3) and C-rich (6R3) terminations have been obtained. Ge wetting layers are only obtained up to 400 °C on 3 × 3 and R3 surfaces in the form of a 4 × 4 reconstruction. The wetting is more complete on the R3 surface, whose atomic structure is the closest to an ideally Si-terminated 1 × 1 SiC surface. At higher temperatures, the wetting layer stage transiets in Ge polycrystallites followed by the unexpected appearance on the 3 × 3 surface of a more ordered Si island structure. It denotes a Si clustering of the initial Si 3 × 3 excess, induced by the presence of Ge. A phase separation mechanism between Si and Ge prevails therefore over alloying by Ge supply onto a such Si-terminated 3 × 3 surface. Conversely, no wetting is obtained on the 6R3 surface and island formation of exclusively pure Ge takes place already at low temperature. These islands exhibit a better epitaxial relationship characterized by Ge(1 1 1)//SiC(0 0 0 1) and Ge〈1 1 −2〉//SiC〈1 −1 0 0〉, ascertained by a clear RHEED spot pattern. The absence of any Ge-C bond signature in the X-ray photoelectron spectroscopy Ge core lines indicates a dominant island nucleation on heterogeneous regions of the surface denuded by the 6R3 graphite pavings. Owing to the used annealing cycles, the deposited Ge amount desorbs on the three surfaces at differentiated temperatures ranging from 950 to 1200 °C. These differences probably reflect the varying morphologies formed at lower temperature on the different surfaces. Considering all these results, the use of imperfect 6R3 surfaces appears to be suited to promote the formation of pure and coherent Ge islands on SiC.     

Effect of proton donors on the intramolecular coordination C=O→Si–F in (acyloxymethyl)trifluorosilanes. Ab initio,DFT and FTIR study,QTAIM analysis

The intramolecular С=O→Si coordination in H‐complexes of (acetoxymethyl)trifluorosilane and (benzoyloxymethyl)trifluorosilane with proton donors HCl, PhOH, MeOH, and CHCl₃ was investigated by density functional theory and second‐order Møller‐Plesset perturbation theory (MP2) methods. Interrelation and mutual influence of the intramolecular coordination bond С=O→Si and intermolecular hydrogen bonds C=O···H and Si–F···H in H‐complexes was established using the AIM and NBO analyses. The С=O→Si coordination is weakened by the C=O···H hydrogen bonding but enhanced by the Si–F_ax···H hydrogen bonding. The structure of H‐complexes of (acetoxymethyl)trifluorosilane with proton donors in solution was determined by comparing the ν(C=O) and ν(Si–F) frequencies calculated using the conductor‐like polarizable continuum model and their experimental Fourier transform infrared values. Copyright © 2014 John Wiley & Sons, Ltd.     

Effect of substrate temperature on the morphology, structural and optical properties of Zn1−xCoxO thin films

Zn_1−xCo_xO thin films with c-axis preferred orientation were deposited on sapphire (0 0 0 1) by pulsed laser deposition (PLD) technique at different substrate temperatures in an oxygen-deficient ambient. The effect of substrate temperature on the microstructure, morphology and the optical properties of the Zn_1−xCo_xO thin films was studied by means of X-ray diffraction (XRD), atomic force microscopy (AFM), UV-visible-NIR spectrophotometer, fluorescence spectrophotometer. The results showed that the crystallization of the films was promoted as substrate temperature rose. The structure of the samples was not distorted by the Co incorporating into ZnO lattice. The surface roughness of all samples decreased as substrate temperature increased. The Co concentration in the film was higher than in the target. Emission peak near band edge emission of ZnO from the PL spectra of the all samples was quenched because the dopant complexes acted as non-radiative centers. While three emission bands located at 409 nm (3.03 eV), 496 nm (2.5 eV) and 513 nm (2.4 eV) were, respectively, observed from the PL spectra of the four samples. The three emission bands were in relation to Zn interstitials, Zn vacancies and the complex of V_O and Zn_i (V_OZn_i). The quantity of the Zn interstitials maintained invariable basically, while the quantity of the V_OZn_i slightly decreased as substrate temperature increased.