Light concentration effects on the performance of the p-i-n quantum dot solar cells: A simulation study

J–V characteristics and efficiency as a function of active region thickness of the p-i-n intermediate band solar cells have been calculated. We compared the maximum efficiency point of three different cells made of well-known materials. Each cell includes a different size of quantum dot in the i-region that causes different intermediate band position. Numerical optimizations have been done by adjusting parameters such as the combination of band gap, mismatch as well as the specific structure of the cell. In addition, it is illustrated that the maximum efficiency point increases with increasing the incident light concentration in the radiative limit. This article considered that using light concentrators can be useful to enhance the efficiency of the solar cell with respect to manufacturing and cost improvements.     

Accurate analysis of electron transfer from quantum dots to metal oxides in quantum dot sensitized solar cells

Electron transfer rate from quantum dot (QD) to metal oxide (MO) in quantum dot sensitized solar cells (QDSSCs) has an important role in the efficiency. In this work, we analyse the electron transfer rate from CdSe, CdS and CdTe QDs to TiO₂, ZnO and SnO₂ MOs by extending the related equations with considering various effects, based on the Marcus theory. In this regard, the effects of QD diameter, QD–MO spacing, the crystalline defects, temperature, and the reorganizational energy, on the electron transfer rate are investigated. The results show that, the maximum electron transfer rate is achieved for CdTe QD with the mentioned three MOs. Moreover, in order to direct the designer to reach the appropriate QDs–MOs combinations for obtaining the maximum electron transfer rate, the average electron transfer rate for various combinations is calculated. For the verification of simulation method, a part of work has been compared with the previous experimental and theoretical results, which indicates the correctness of our simulation algorithm.     

Type II GaSb/GaAs quantum dot/ring stacks with extended photoresponse for efficient solar cells

We report on the fabrication of GaAs based p–i–n solar cells containing 5 and 10 layers of type II GaSb quantum rings grown by molecular beam epitaxy. Solar cells containing quantum rings show improved efficiency at longer wavelengths into the near-IR extending up to 1500 nm and show enhanced short-circuit current under 1 sun illumination compared to a GaAs control cell. A reduction in the open-circuit voltage is observed due to the build-up of internal strain. The MBE growth, formation and photoluminescence of single and stacked layers of GaSb/GaAs quantum rings are also presented.     

Pressure effects on the donor binding energy in zinc-blende InGaN/GaN quantum dot

Based on the effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of the hydrogenic impurity in zinc-blende (ZB) InGaN/GaN quantum dot (QD) are investigated by means of a variational procedure. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD structure parameter. Moreover, it is found that the hydrostatic pressure has a remarkable influence on the donor binding energy of the hydrogenic impurity located at the vicinity of dot center in ZB InGaN/GaN QD.     

The hydrostatic pressure and temperature effects on Raman scattering of a hydrogenic impurity in a disc-shaped quantum dot

Using the perturbation method and the effective-mass approximation, we studied the combined effects of hydrostatic pressure and temperature on Raman scattering in a disc-shaped quantum dot with a parabolic potential in the presence of an electric field. The differential cross-section involved in this process is calculated. Numerical calculations on a typical GaAs quantum dot are performed. The results show that not only the impurity but also the temperature and the hydrostatic pressure have an influence on the differential cross-section of the system.     

Polaron effects on linear and nonlinear optical properties of a two-electron quantum dot

The linear and nonlinear optical properties of parabolic quantum dots in which two electrons interact with each other through both coulomb repulsion and longitudinal-optical phonon are studied by using the matrix diagonalization method. With typical semiconducting GaAs-based materials, the linear, third-order nonlinear, total optical absorption coefficients and the optical refractive index have been examined. The effects of different electron-phonon coupling strengths on the linear and nonlinear optical properties are also predicted.     

Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots.     

基于GaAs/InAs-GaAs/ZnSe量子点太阳电池结构的优化

基于GaAs/InAs-GaAs/ZnSe的P-i-N量子点太阳电池结构, 根据光学原理和扩散理论建立了光生电流密度与膜层厚度相关的数学模型, 定量分析了量子点层厚度等参数对太阳电池性能的影响,以期达到提高量子 点太阳电池转换效率的目的.理论模拟表明:在i层厚度取3000 nm时,优化后P(GaAs)型、N(ZnSe)型层 薄膜的最佳膜厚为1541 nm, 78 nm, 并在单一波长下太阳电池转换效率为20.1%;同时量子 点体积和温度对于量子点太阳电池I-V特性也会产生影响, 当量子点体积和温度逐渐增大时, 开路电压呈现减小趋势,使得转换效率降低.     

Combined effects of hydrostatic pressure and temperature on nonlinear properties of an exciton in a spherical quantum dot under the applied electric field

Within the framework of the effective-mass approximation, we have calculated the combined effects of hydrostatic pressure, temperature and applied electric field on an exciton confined in a typical GaAs/Ga_0.7Al_0.3As quantum dot. Several inputs of the confinement potential, hydrostatic pressure, temperature, and applied electric field have been considered. Our findings suggest that (1) the effect of the confinement strength is dominant over the electric field effect, (2) the oscillator strength is an increasing function of the hydrostatic pressure, (3) the absorption coefficients and energy difference depend strongly on the hydrostatic pressure but weakly on the temperature, (4) the absorption coefficients with considering excitonic effects are stronger than those without considering excitonic effects and the absorption peak will move to the right side induced by the electron-hole interaction, (5) the applied electric field may effect either the size or the position of absorption peaks of excitons.     

Impurity and exciton effects on the nonlinear optical properties of a disc-like quantum dot under a magnetic field

A detailed investigation of the nonlinear optical properties of the (D⁺, X) complex in a disc-like quantum dot (QD) with the parabolic confinement, under applied magnetic field, has been carried by using the perturbation method and the compact density-matrix approach. The linear and nonlinear optical absorption coefficients between the ground (L = 0) and the first excited state (L = 1) have been examined based on the computed energies and wave functions. The competition between the confinement and correlation effects on the one hand, and the magnetic field effects on the other hand, is also discussed. The results show that the confinement strength of QDs and the intensity of the illumination have drastic effects on the nonlinear optical properties. In addition, we note that the absorption coefficients of an exciton in QDs depend strongly on the impurity but weakly on the magnetic field. Furthermore, the light and heavy hole excitons should be taken into account when we study the optical properties of an exciton in a disc-like QD.     

Enhanced performance of InGaN/GaN multiple quantum well solar cells with double indium content

The performance of a multiple quantum well （MQW） InGaN solar cell with double indium content is investigated. It is found that the adoption of a double indium structure can effectively broaden the spectral response of the external quantum efficiencies and optimize the overall performance of the solar cell. Under AM1.5G illumination, the short-circuit current density （Jsc） and conversion efficiency of the solar cell are enhanced by 65% and 13% compared with those of a normal single-indium-content MQW solar cell. These improvements are mainly attributed to the expansion of the absorption spectrum and better extraction efficiency of the photon-generated carriers induced by higher polarization.     

The effects of temperature and hydrostatic pressure on the photoionization cross-section and binding energy of shallow donor impurities in quantum dots

Using a variational approach, we have calculated the hydrostatic pressure and temperature effects on the donor impurity related photoionization cross-section and impurity binding in GaAs/GaAlAs quantum dots. Our calculations have revealed the dependence of the photoionizaton cross-section and the impurity binding on temperature and hydrostatic pressure.     

Effect of the dielectric-constant mismatch and magnetic field on the binding energy of hydrogenic impurities in a spherical quantum dot

Within the effective mass approximation and variational method the effect of dielectric constant mismatch between the size-quantized semiconductor sphere, coating and surrounding environment on impurity binding energy in both the absence and presence of a magnetic field is considered. The dependences of the binding energy of a hydrogenic on-center impurity on the sphere and coating radii, alloy concentration, dielectric-constant mismatch, and magnetic field intensity are found for the GaAs–Ga_1−xAl_xAs–AlAs (or vacuum) system.     

Photoionization and binding energy of a donor impurity in a quantum dot under an electric field: Effects of the hydrostatic pressure and temperature

Using the perturbation approach, we have calculated the donor impurity related photoionization cross-section in a quantum dot under different temperature and hydrostatic pressure conditions. Our calculation have revealed the dependence of the photoionization cross-section on the confinement strength, temperature and hydrostatic pressure.     

Parameter design and performance analysis of a ultrafast all-optical XOR gate based on quantum dot semiconductor optical amplifiers in nonlinear mach-zehnder interferometer

This paper presents the parameter design and performance analysis of a 160 Gb/s all-optical XOR gate based on cross-gain modulation (XGM) in a nonlinear Mach-Zehnder interferometer (MZI) with quantum dot semiconductor optical amplifiers (QD-SOAs). Detailed numerical simulations of the QD-SOA parameters and optical signal parameters are performed to elevate the gate performance. With the optimized parameters, a Q factor over 8 dB is obtained. The possibility of operating at higher speed of the XOR gate is demonstrated as well. The results will be helpful for the design and performance analysis of practical quantum dot devices.     

Effect of a buffer layer between the shell and ligand on the optical properties of an exciton and biexciton in type-II quantum dot nanocrystals

In this study, we have investigated the effect of the buffer layers on the electronic and optical properties of an exciton (X) and a biexciton (XX) in a type-II CdTe/CdSe quantum dot nanocrystal. In an experimental study, it has been reported that when a CdTe/CdSe quantum dot nanocrystal is coated by a ZnTe material as a buffer layer, the photoluminescence quantum yield is growing from 4 to 20%. We have confirmed theoretically this improvement and extended the calculations to an XX structure. In the calculations, two different semiconductor materials, CdS and ZnTe, have been considered for the buffer layer. We have theoretically shown that the buffer layer causes an increase in the radiative oscillator strength of both X and XX. When the ZnTe is used as the buffer layer, the oscillator strength becomes stronger when compared to CdSe buffer material because of higher conduction band offset between CdSe and ZnTe.     

Simultaneous effects of hydrostatic pressure and temperature on the binding energy of hydrogenic impurity in cylindrical quantum well wires

The effect of hydrostatic pressure and temperature on the ground state binding energy of hydrogenic impurities is investigated in a GaAs/Ga_0.7Al_0.3As cylindrical quantum well wire as a function of the wire radius. The calculations are performed using a variational procedure within the effective mass approximation for a finite confinement potential for various values of the hydrostatic pressure and temperatures. The results are compared with the available data in literature and found to be in a good agreement with them.     

Low temperature measurements of the energy loss rate in quantum wires and 2DEGs in an InAlAs/InGaAs/InAlAs heterostructure

Electron heating measurements have been carried out in etched quantum wires of various widths and in two-dimensional electron gases at low temperature in InGaAs quantum wells. The value of the temperature exponent of the energy loss rate, an indicator of the type of predominant energy loss scattering, is found to be n=3, indicative of piezoelectric scattering. At a lattice temperature <1 K, our wires show an exponential behavior expected for deviations from equipartition. Further departure is found at still lower temperatures to a width-dependent loss rate, which is thought to be due to many-body effects in the one-dimensional wires.