Mechanical properties and electronic structure of TiC,Ti0.75W0.25C,Ti0.75W0.25C0.75N0.25, TiC0.75N0.25 and TiN

The first-principles calculations are performed to investigate the mechanical properties and electronic structure of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN. Density functional theory and ultrasoft pseudopotentials are used in this study. From the formation energy, it is found that nitrogen can increase the stability of TiC. The calculated elastic constants and elastic moduli of TiC compare favorably with other theoretical and experimental values. Tungsten and nitrogen are observed to significantly increase the bulk, shear and Young's modulus of TiC. Through the analysis of B/G and Cauchy pressure, tungsten can significantly improve the ductility of TiC. The electronic structure of TiC, TiN, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, and TiC_0.75N_0.25 are used to describe nonmetal–metal and metal–metal bonds. Based on the Mulliken overlap population analysis, the hardness values of TiC, Ti_0.75W_0.25C, Ti_0.75W_0.25C_0.75N_0.25, TiC_0.75N_0.25 and TiN are estimated.     

First-principles investigation on vibrational,anisotropic elastic and thermodynamic properties for L12 structure of Al3Er and Al3Yb under high pressure

To better clarify the physical properties for Al₃RE precipitates, first-principles calculations are performed to investigate the vibrational, anisotropic elastic and thermodynamic properties of Al₃Er and Al₃Yb. The calculated results agree well with available experimental and theoretical ones. The vibrational properties indicate that Al₃Er and Al₃Yb will keep their dynamical stabilities with L1₂ structure up to 100 GPa. The elastic constants are satisfied with mechanical stability criteria up to the external pressure of 100 GPa. The mechanical anisotropy is predicted by anisotropic constants A^G, A^U, A^Z and 3D curved surface of Young’s modulus. The calculated results show that both Al₃Er and Al₃Yb are isotropic at zero pressure and obviously anisotropic under high pressure. Further, we systematically investigate the thermodynamic properties and provide the relationships between thermal parameters and pressure. Finally, the pressure-dependent behaviours of density of states, Mulliken charge and bond length are discussed.     

Elastic properties of mono- and polycrystalline ( and Lu) under pressure effect

The structural and elastic properties of perovskite-type RCRh₃, with R=Sc, Y, La and Lu, under pressure effects have been investigated using the pseudo-potential plane-wave method based on the density functional theory within the generalized gradient approximation. For monocrystalline RCRh₃, the optimized lattice constants, elastic constants and directional elastic wave velocities are calculated and analyzed in comparison with the available experimental and theoretical data. An increase in the lattice constant has been found with increasing atomic size of the R element and a corresponding decrease in the hardness. The anisotropic elastic constants and directional elastic wave velocities increase linearly with increasing pressure. A set of elastic parameters and related properties, namely bulk and shear moduli, Young’s modulus, Poisson’s ratio, Lamé’s coefficients, average sound velocity and Debye temperature are predicted in the framework of the Voigt–Reuss–Hill approximation for polycrystalline RCRh₃. We have found that the toughness of RCRh₃ compounds can be improved at high pressure.     

Structural, elastic, and electronic properties of orthorhombic NH3BH3: An ab initio study

At the generalized gradient approximation (GGA), the elastic constants of the orthorhombic phase of NH₃BH₃ were calculated with plane-wave pseudo-potential method. Our calculation showed that the orthorhombic phase NH₃BH₃ is a loose and brittle material, as well as hard to be deformed, also we calculated the elastic anisotropies and the Debye temperatures from the elastic constants. And from the band structure and density of state (DOS), we concluded that NH₃BH₃ is a wide-gap semiconductor and the band gap is almost 6.0 eV. The bonds between N atoms and H atoms show a strong covalent characteristic, B atoms and H atoms form ironic bonds, and so as to the B-N bonds. Electrons from the B atoms are absorbed by the H atoms around the B atoms, and the H atoms display electronegativity.     

DFT - based study of electronic structures and mechanical properties of LiTaO3: ferroelectric and paraelectric phases

Abstract

By applying ab initio calculation within density functional theory (DFT), we study the structure parameters, electronic band structure, elastic coefficients, polycrystalline elastic properties, anisotropy factors and Debye temperature of ferroelectric and paraelectric phases of LiTaO₃ within the generalised gradient approximation at ambient pressure. The atomic structure in both phases is fully relaxed and the lattice constant, angle and atomic positions are well consistent with experimental values. The computed single-crystal elastic coefficients indicate that mechanical stability of LiTaO₃ in both phases is confirmed using the generalised Born criteria. The shear, bulk and Young’s modulus, Poisson’s ratio, and Vickers hardness were computed according to theoretical elastic constants by Voight–Reuss–Hill method. Several anisotropy factors and indexes are computed to illustrate mechanical anisotropy. Both phases are shown to be weakly anisotropic. The Debye temperature is estimated using the longitude and transverse elastic wave velocity of the ideal polycrystalline LiTaO₃ aggregates. We have found that LiTaO₃ in both phases has an indirect energy band gap. The differences in the electronic structure and density of states for both phases are quite small. Our results indicate that the mechanical and bonding properties of both phases are very similar. The obtained results were compared with the available experimental and theoretical values.     

Planar nano-block structures Tin+1Al0.5Cn and Tin+1Cn (n = 1, and 2) from MAX phases: Structural,electronic properties and relative stability from first principles calculations

Structural, electronic properties and relative stability of quasi-two-dimensional (2D) free-standing planar nano-block (NBs) structures Ti_n+1Al_0.5C_n and Ti_n+1C_n (n = 1 and 2), which can be prepared using the recently developed procedure of exfoliation of corresponding NBs from MAX phases, were examined within first principles calculations in comparison with parent MAX phases Ti₃AlC₂ and Ti₂AlC. We found that in general Ti_n+1C_n and Ti_n+1Al_0.5C_n NBs retain the atomic geometries of the corresponding blocks of the MAX phases, but some structural distortions for the NBs occur owing to the lowering of the coordination number for atoms in the external Ti sheets of the nano-block structures. Our analysis based on their cohesive and formation energies reveals that the stability of the nano-block structures increases with index n (or, in other words, with a growth of the number of Ti–C bonds), the Al-containing NBs becoming more stable than the “pure” Ti–C NBs. Our data show that the magnetization of the simulated planar nano-block structures can be expected; so, for the Ti₃C₂ nano-block the most stable will be the spin configuration, where within each external Ti sheet the spins are coupled ferromagnetically together with antiferromagnetic ordering between opposite external titanium sheets of this nano-block.     

Structural and optical properties of Ba(Ti1−x,Nix)O3 thin films prepared by sol–gel process

Ba(Ti_1−x,Ni_x)O₃ thin films were prepared on fused quartz substrates by a sol–gel process. X-ray diffraction and Raman scattering measurements showed that the films are of pseudo-cubic perovskite structure with random orientation and the change of lattice constant caused by Ni-doping with different concentrations is very small. Optical transmittance spectra indicated that Ni-doping has an obvious effect on the energy band structure. The energy gap of Ba(Ti_1−x,Ni_x)O₃ decreased linearly with the increase of Ni concentration. It indicates that the adjusting of band gap can be achieved by controlling the Ni-doping content accurately in Ba(Ti_1−x,Ni_x)O₃ thin films. This has potential application in devices based on ferroelectric thin films.     

Ab initio calculations of band structure and thermophysical properties for SnS2 and SnSe2

The electronic band structure and elastic constants of SnS₂ and SnSe₂ have been calculated by using density-functional theory (DFT). The calculated band structures show that SnS₂ and SnSe₂ are both indirect band gap semiconductors. The upper valence bands originate mainly from S_p and Sn_d electrons, while the lowest conduction bands are mainly from (S, Se) _p and Sn_s states. The calculated elastic constants indicate that the bonding strength along the [100] and [010] direction is stronger than that along the [001] direction and the shear elastic properties of the (010) plane are anisotropic for SnS₂ and SnSe₂. Both compounds exhibit brittle behavior due to their low B/G ratio. Relationships among volumes, the heat capacity, thermal expansion coefficients, entropy, vibrational energy, internal energy, Gibbs energy and temperature at various pressures are also calculated by using the Debye mode in this work.     

Electronic Structure and Elastic Properties of Ti3AlC from First-Principles Calculations

We perform a first-principles study on the electronic structure and elastic properties of TiaA1C with an antiperovskite structure. The absence of band gap at the Fermi level and the finite value of the density of states at the Fermi energy reveal the metallic behavior of this compound. The elastic constants of Ti3AlC are derived yielding c11 = 356 GPa, c12 = 55 GPa, c44 = 157 GPa. The bulk modulus B, shear modulus G and Young＇s modulus E are determined to be 156, 151 and 342 GPa, respectively. These properties are compared with those of Ti3AlC2 and Ti2AlC with a layered structure in the Ti-Al-C system and FeaAlC with the same antiperovskite structure.     

The influence of oxygen vacancies on the chemical bonding in titanium oxide

A self-consistent LAPW band structure calculation for TiO_0.75 has been performed, assuming long-range order of vacancies on the oxygen sublattice. The calculation is based on a hypothetical model structure which can be described as Ti ₃ ^[4] Ti^[6]O_3o, where _o denotes an oxygen vacancy. In the model structure two types of titanium atoms occur: Ti^[4] atoms which have two vacancies as neighbours and are quadratically surrounded by four oxygen atoms, and Ti^[6] atoms which are octahedrally surrounded by six oxygen atoms. The calculated density of states (DOS) and the local partial densities of states are compared with the respective values for stoichiometric TiO containing no vacancies. A characteristic difference is the appearance of two sharp peaks in the DOS curve below the Fermi energy which are caused by the vacancies. These vacancy states exhibit a considerable amount of charge in the vacancy muffin-tin sphere and are found to be derived from Ti 3d states extending into the vacancy sphere. The introduction of vacancies also leads to a lowering of the Fermi energy indicating a stabilizing effect. The bonding situation in TiO_0.75 as compared to TiO as well as the changes in chemical bonding in the series TiC_0.75–TiN_0.75–TiO_0.75 are discussed on the basis of electron density plots. The loss of Ti^[4]–O bonds (as compared to TiO) is compensated by the formation of Ti^[4]–_o–Ti^[4] bonds across the vacancy and by an increase of the bond strength of the Ti^[4]–O bonds. On the other hand, the Ti^[4]–Ti^[4] and particularly the Ti^[4]–Ti^[6] bonds are weakened by the introduction of vacancies.Dedicated to Professor F. Kohler on the occasion of his 65^th birthday     

Anisotropic domain-wall dynamics in proton-irradiated KH2PO4

KH₂PO₄ single crystals have been studied by employing complex impedance measurements in view of the domain freezing effect. As a result, distinct behaviors of the anisotropic domain-wall dynamics in the activation energy of domain freezing and the Vogel–Fulcher temperature before and after proton irradiation have been identified in the anisotropic crystal structure.     

First-principles calculations on elasticity of under pressure

First-principles calculations of the crystal structure and the elastic properties of OsN₂ have been carried out with the plane-wave pseudopotential density functional theory method. The calculated values are in very good agreement with experimental data as well as with some of the existing model calculations. The dependence of the elastic constants c_ij, the aggregate elastic moduli (B,G,E), Poisson’s ratio, and the elastic anisotropy on pressure has been investigated. Moreover, the variation of the Debye temperature and the compressional and shear elastic wave velocities with pressure P up to 60 GPa at 0 K have been investigated for the first time.     

Structure formation and mechanisms of DC conduction in thermally evaporated nanocrystallite structure ZnIn2Se4 thin films

ZnIn₂Se₄ is of polycrystalline structure in as synthesized condition. It transforms to nanocrystallite structure of ZnIn₂Se₄ film upon thermal evaporation. Annealing temperatures influenced crystallite size, dislocation density and internal strain. The hot probe test showed that ZnIn₂Se₄ thin films are n-type semiconductor. The dark electrical resistivity versus reciprocal temperature for planar structure of Au/ZnIn₂Se₄/Au showed existence of two operating conduction mechanisms depending on temperature. At temperatures >365 K, intrinsic conduction operates with activation energy of 0.837 eV. At temperatures <365 K, extrinsic conduction takes place with activation energy of 0.18 eV. The operating conduction mechanism in extrinsic region is variable range hopping. The parameters such as density of states at Fermi level, hopping distance and average hopping energy have been determined and it was found that they depend on film thickness. The dark current–voltage characteristics of Au/n-ZnIn₂Se₄/p-Si/Al diode at different temperatures ranging from 293–353 K have been investigated. Results showed rectification behavior. At forward bias potential <0.2 V, thermionic emission of electrons from ZnIn₂Se₄ film over a potential barrier of 0.28 V takes place. At forward bias potential >0.2 V, single trap space charge limited current is operating. The trap concentration and trap energy level have been determined as 3.12×10¹⁹ cm⁻³ and 0.24 eV, respectively.     

First-principles studies of the electronic and elastic properties of Ti2GeC

We have performed first-principles studies on electronic structure and elastic properties of Ti₂GeC. The calculated band structure shows that this compound is electrical conductor. From the pressure dependence of elastic constants, we find that Ti₂GeC is most stable in the pressure range from 0 to 100 GPa. The strong Ti 3d, Ge 4p and C 2p hybridization may stabilize the structure of Ti₂GeC. By analyzing the ratio between the bulk and shear moduli, we conclude that Ti₂GeC is brittle in nature, and the brittleness of Ti₂GeC originated from the large value of Ti atom occupying the internal parameter z.     

氮氢混合气氛退火中氢对Bi4Ti3O12铁电性能的影响

采用基于密度泛函理论的第一性原理研究了在氮氢混合气氛中退火后Bi₄Ti₃O₁₂铁电性的退化机理. 分别计算了无氢、含氢模型中Ti沿c轴位移时体系总能量的变化,电子云密度分布,以及电子结构的总能态密度的变化. 结果表明含氢Bi₄Ti₃O₁₂铁电相Ti-O,Bi-O间的电子云重叠布居分布较无氢情况下变化明显,氢氧之间较强的轨道杂化使它们趋于形成共价键;晶格中氢氧键的 关键词： 氮氢混合气氛退火 铁电性 4Ti₃O₁₂')" href="#">Bi₄Ti₃O₁₂ 第一性原理     

四方相BaTiO3缺陷性质的第一性原理计算

采用基于密度泛函理论的第一性原理方法,研究了BaTiO₃在四方相下的各种缺陷性质.计算结果表明,在富氧环境下,钛的中性氧空位、分肖特基缺陷2V^3-_Ti+3V²⁺_O形成能分别为最低;而当体系处在还原环境下时,氧空位逐渐成为主要缺陷,其形成能最低.由于四方相下存在较强的Ti—O键共价杂化,四方相下全肖特基缺陷V^2-_Ba关键词： 缺陷 第一性原理 3')" href="#">BaTiO₃     

First-principles study on electronic structure and elastic properties of Ti2SC

We have performed first-principles study on electronic structure and elastic properties of Ti₂SC. The absence of band gap at the Fermi level and the finite value of the density of states at the Fermi energy reveal the metallic behavior of this compound. The five independent elastic constants were derived and the bulk modulus, Young's modulus, shear modulus, and Poisson's ratio were determined. The high bulk modulus and hardness was found to be originated from the strong Ti 3d-S 2p hybridization. Such strong MA bonding is unusual in the MAX phases studied so far. Ti₂SC is elastically stable and exhibits highly elastic isotropy.     

Structural, elastic and electronic properties of a new ternary-layered Ti2SiN

The structural, elastic and electronic properties of Ti₂SiN were studied by first-principle calculations. The calculated bond lengths of Ti-Si and Ti-C are 2.65 and 2.09 Å, respectively. The results show Ti₂SiN is mechanically stable, and its bulk modulus B, shear modulus G, Young's modulus E, Poisson's ratio μ and anisotropy factor A are determined to be 182 GPa, 118 GPa, 291 GPa, 0.233 and 1.57, respectively. The calculated electronic structure indicates that Ti₂SiN is anisotropic and conductive.     

Structural and elastic properties of Zr<Subscript>2</Subscript>AlX and Ti<Subscript>2</Subscript>AlX (X = C and N) under pressure effect

Using first-principles density functional calculations, the effect of high pressures, up to 20 GPa, on the structural and elastic properties of Zr₂AlX and Ti₂AlX, with X = C and N, were studied by means of the pseudo-potential plane-waves method. Calculations were performed within the local density approximation to the exchange-correlation approximation energy. The lattice constants and the internal parameters are in agreement with the available results. The elastic constants and their pressure dependence are calculated using the static finite strain technique. We derived the bulk and shear moduli, Young's moduli and Poisson's ratio for ideal polycrystalline Zr₂AlX and Ti₂AlX aggregates. We estimated the Debye temperature of Zr₂AlX and Ti₂AlX from the average sound velocity. This is the first quantitative theoretical prediction of the elastic properties of Zr₂AlC, Zr₂AlN and Ti₂AlN compounds, and it still awaits experimental confirmation.     

Low temperature fired Ni-Cu-Zn ferrite with Bi4Ti3O12

The Ni-Cu-Zn ferrites with different contents of Bi₄Ti₃O₁₂ ceramics (1-8 wt%) as sintering additives were prepared by the usual ceramic technology and sintered at 900 °C to adapt to the low temperature co-fired ceramic (LTCC) technology. The magnetic and dielectric properties of the ferrite can be effectively improved with the effect of an appropriate amount of Bi₄Ti₃O₁₂. For all samples, the ferrite sintered with 2 wt% Bi₄Ti₃O₁₂ has relatively high density (98.8%) and permeability, while the ferrite with 8 wt% Bi₄Ti₃O₁₂ has relatively good dielectric properties in a wide frequency range. The influences of Bi₄Ti₃O₁₂ addition on microstructure, magnetic and dielectric properties of the ferrite have been discussed.