极端条件下6Li2O的热力学性能与电子结构

 采用密度泛函理论与准谐振德拜模型研究了面心立方相的⁶Li₂O在极端条件下的热力学性质与电子结构。结果表明: ⁶Li₂O的热膨胀系数在任何温度下都随压强增加明显降低,但仅当压强较低(低于40 GPa)时,温度对6Li2O的热膨胀系数的影响才明显;O原子半径随压强增大而迅速降低,而随温度的变化并不明显;在低压条件下(低于40 GPa),带隙随温度的升高缓慢降低;而在高压条件下(高于40 GPa),温度对带隙宽度的影响几乎可以忽略;无论在什么温度条件下,带隙宽度均随压强的增大而迅速增加。     

第一性原理模拟U在Gd2Zr2O7烧绿石中的固溶

采用第一性原理密度泛函理论模拟U在Gd₂Zr₂O₇烧绿石中的固溶,在低浓度U掺杂时,Gd₂Zr₂O₇烧绿石保持烧绿石结构;随着U掺杂浓度增加,Gd₂(Zr_{2-y}U_y)O₇和(Gd_{2-y}U_y)Zr₂O₇体系的晶格常数发生线性变化．计算结果表明,由于总能较低,U原子更偏向于替代无序换位后Gd₂Zr₂O₇晶格中B位的Gd原子．     

非线性光学晶体HgGa2S4 和 Hg0.5Cd0.5Ga2S4的能带结构、化学键及光学性质研究

用密度泛函理论和非谐振子模型计算了晶体HgGa₂S₄和Hg_0.5Cd_0.5Ga₂S₄的能带结构、态密度、化学成键及线性、非线性光学性质。结果表明：HgGa₂S₄的价带顶部主要是Ga-S成键态的贡献，导带底部主要是Ga-S反键态的贡献; Hg_0.5Cd_0.5Ga₂S₄的价带顶部主要由S-3p轨道组成，导带底部主要是Ga-S反键态的贡献。布居分析表明Ga-S键主要是共价成分，而Hg-S和Cd-S键主要是离子成分。HgGa₂S₄的折射率计算值与实验值在低能量区很好吻合。另外，HgGa₂S₄的能隙计算值比Hg_0.5Cd_0.5Ga₂S₄小，而二阶非线性极化率比Hg_0.5Cd_0.5Ga₂S₄大。     

第一性原理计算高压下金红石TiO2的结构不稳定性及热学性质

采用第一性原理计算研究了金红石TiO₂结构在高压下的不稳定性及热力学性质. 计算的高压下结构参数和零压的声子色散曲线与实验数据十分吻合. 进一步模拟了在不同压力下的声子曲线,在压力下,声子曲线不断软化,?点附近的振动频率不断减小直至虚频,意味着结构的不稳定,根据计算的不同压力下的弹性常数获得了其力学不稳定性,结果表明金红石结构TiO₂在压力高于17.7 GPa时变得不稳定. 根据准谐近似,获得了金红石TiO₂结构的热力学性质,计算结果与现有     

基于第一性原理的合金化掺杂MgH2的热力学稳定性研究

基于密度泛函的第一性原理,系统研究了合金化掺杂过渡金属（TM=Sc,Ti,Y）和IIA族元素（M=Ca,Sr,Ba）对MgH₂（金红石和萤石结构）的热力学稳定性的影响。结果表明,在低掺杂量（<20%） 时,MgH₂的萤石结构比金红石结构相对更稳定。掺杂Ti,Sr,Ba时,MgH₂的结构发生了失稳现象。MgH₂由金红石结构转变到萤石结构的掺杂TM和M的比例分别大约在20%和40%左右。Mg_0.5Ba_0.52萤石结构的形成焓比MgH₂萤石结构高约0.3 eV,表明其放氢温度在标准大气压下将远低于纯MgH₂。理论计算数据与实验数据有很好的一致性.     

SiN掺杂提高BaMgAl10O17:Eu2+荧光粉光学性能的第一性原理研究

使用基于密度泛函理论的CASTEP软件计算了BAM:Eu²⁺(BaMgAl₁₀O₁₇:Eu²⁺)荧光粉在SiN掺杂前后的能带、态密度、吸收光谱和Mulliken布居．Eu²⁺处于BR位置光吸收更强;SiN掺杂使处于BR位置的Eu²⁺的数量上升,而处于mO位置的Eu²⁺的数量下降,抵消了SiN掺杂降低Eu的态密度对光谱的影响．所以适量掺杂的SiN提高了BAM:Eu²⁺荧光粉的吸收发射光谱强度．Si-N键和Eu-N键的Mulliken布居数分别高于Al-O键和Eu-O键, 说明Si-N键和Eu-N键的共价性分别强于Al-O键和Eu-O键．发光中心Eu²⁺局域结构共价性的增强降低了BAM:Eu²⁺镜面层的活性,这是SiN掺杂提高BAM:Eu²⁺+荧光粉光学稳定性的主要原因．     

UO2的电子结构及光学性质的第一性原理研究

采用局域自旋密度近似 (LSDA)和有效库仑相关能 (U) 方法研究了UO₂的晶格参数、能带结构和光学常数. 计算得到的UO₂晶体的晶格常数为5.40 ?,带隙宽度为1.82 eV,正确预测了UO₂的反铁磁性半导体基态性质. 能带结构和介电函数的分析结果表明,铀的6d电子在晶体场中发生劈裂形成两个能级,与实验结果较为符合.     

离子注入掺杂锐钛矿TiO2薄膜的光学性能

 在玻璃基体上,采用射频磁控溅射方法在不同的基体温度下制备了TiO₂薄膜,然后在薄膜中注入注量分别为5×1016, 1×1017和5×1017/cm2的N离子以制备N掺杂的TiO₂薄膜。X射线衍射结果表明：制备出的TiO₂薄膜为锐钛矿型。X射线光电子能谱研究结果表明：注入的N离子与TiO₂晶粒相互作用,形成了含氮的TiO_xN_2-x化合物,从而改变了TiO₂薄膜的吸收边;随N离子注量增加,吸收边移动更明显;同时,由于氮离子注入产生的辐照缺陷使TiO₂薄膜在紫外和可见光区的吸收也明显增强。     

蓝宝石衬底SnO2:Sb薄膜的制备及结构和光致发光性质

用射频磁控溅射法在蓝宝石(0001)衬底上制备出锑掺杂的氧化锡(SnO₂:Sb)薄膜.对制备薄膜的结构和发光性质进行了研究.制备样品为多晶薄膜，具有纯SnO₂的四方金红石结构.室温条件下对样品进行光致发光测量，在334 nm附近观测到紫外发射峰，并对SnO₂:Sb的光致发光机制进行了研究.     

Er3+及Er3+/Yb3+掺杂ZrO2-Al2O3的制备及发光性质

采用共沉淀法制备了纳米晶ZrO₂-Al₂O₃∶Er³⁺发光粉体.所制备的粉体室温下具有Er3+离子特征荧光发射,主发射在绿光,其中位于547 nm、560 nm的绿光最强,并得出稀土离子与基质之间有能量传递.对不同煅烧温度下的样品研究表明:因不同温度下所制得的样品晶相不同.研究了纳米晶ZrO2-Al2O3∶Er3+及ZrO₂-Al₂O₃∶Er³⁺/Yb³⁺的上转换发光,并分析了上转换的跃迁机制.发现ZrO₂-Al₂O₃∶Er³⁺的绿光为双光子过程,而ZrO₂-Al₂O₃∶Er³⁺、Yb³⁺的上转换光谱中,红光和绿光也为双光子过程,而极弱的蓝光为三光子过程.讨论了Er³⁺的浓度猝灭现象.最适宜掺杂浓度的原子分数为2%（Er³⁺/Zr⁴⁺）.     

Photoluminescence characterization of polycrystalline n-type Cu2O films

Electrodeposition was used to deposit Cu₂O thin films on ITO substrates. Photoresponse of the film clearly indicated n-type behavior of Cu₂O in photoelectrochemical cells. The temperature dependence of photoluminescence (PL) revealed that the spectra consist of donor-acceptor pair emissions and the recombination between electrons bound to donors and free holes. We observed that the dominant intrinsic defect, oxygen vacancies, creates a donor energy level at 0.38 eV below the bottom of the conduction band. As a result, this donor level acts as a center for both PL emissions and to produce n-type conductivity in the electrodeposited Cu₂O films. In addition, an acceptor energy level at 0.16 eV from the top of the valence band was observed.     

Oxygen vacancy in N-doped Cu2O crystals: A density functional theory study

The N-doping effects on the electronic properties of Cu2O crystals are investigated using density functional theory. The calculated results show that N-doped Cu2O with or without oxygen vacancy exhibits different modifications of electronic band structure. In N anion-doped Cu2O, some N 2p states overlap and mix with the O 2p valence band, leading to a slight narrowing of band gap compared with the undoped Cu2O. However, it is found that the coexistence of both N impurity and oxygen vacancy contributes to band gap widening which may account for the experimentally observed optical band gap widening by N doping.     

Photoluminescence and X-ray diffraction studies on Cu2O

Cuprous oxide (Cu₂O) crystals were grown by the two-step crystallization method in air atmosphere conditions from polycrystalline thin copper foils. The method comprises two stages; in the first one the copper plates are oxidized at 1020 °C by some hours in line with its initial thickness. In the second stage, the growth of large crystalline areas is promoted by annealing the Cu₂O samples at 1100 °C for long periods. Raman scattering an X-ray measurements demonstrates the existence of the single-phase Cu₂O. The effects on the crystalline structure and photoluminescence (PL) response were studied as a function of the conditions used in the second stage of the synthesis method. PL spectra were taken from 10 to 180 K to define the main radiative recombination paths. Besides the near band excitonic transitions, two strong emission bands at 720 and 920 nm associated with relaxed excitons at oxygen and copper vacancies were detected. Both excitonic-vacancy bond transitions presented similar intensities that are related to the growth method. X-ray and Raman scattering measurements help to assess the samples crystalline quality.     

A density functional theory study on the adsorption of CO and O2 on Cu-terminated Cu2O （111） surface

The adsorptions of CO and 02 molecules individually on the stoichiometric Cu-terminatcd Cu20 （111） surface are investigated by first-principles calculations on the basis of the density functional theory. The calculated results indicate that the CO molecule preferably coordinates to the Cu2 site through its C atom with an adsorption energy of-1.69 eV, whereas the 02 molecule is most stably adsorbed in a tilt type with one O atom coordinating to the Cu2 site and the other O atom coordinating to the Cul site, and has an adsorption energy of -1.97 eV. From the analysis of density of states, it is observed that Cu 3d transfers electrons to 2π orbital of the CO molecule and the highest occupied 5σ orbital of the CO molecule transfers electrons to the substrate. The sharp band of Cu 4s is delocalized when compared to that before the CO molecule adsorption, and overlaps substantially with bands of the adsorbed CO molecule. There is a broadening of the 2π orbital of the 02 molecule because of its overlapping with the Cu 3d orbital, indicating that strong 3d-2π interactions are involved in the chemisorption of the 02 molecule on the surface.     

Investigations on co-evaporated Cu2SnSe3 and Cu2SnSe3-ZnSe thin films

Cu₂SnSe₃ is an important precursor material for the growth of Cu₂ZnSnSe₄, an emerging solar cell absorber layer via solid state reaction of Cu₂SnSe₃ and ZnSe. In this study, we have grown Cu₂SnSe₃ (CTSe) and Cu₂SnSe₃-ZnSe (20%) films onto soda-lime glass substrates held at 573 K by co-evaporation technique. The effect of annealing of these films at 723 K for an hour in selenium atmosphere is also investigated. XRD studies of as-deposited Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films indicated SnSe as secondary phase which disappeared on annealing. The direct optical band gap of annealed Cu₂SnSe₃ and Cu₂SnSe₃-ZnSe films were found to be 0.90 eV and 0.94 eV respectively. Raman spectroscopy studies were used to understand the effect of ZnSe on the properties of Cu₂SnSe₃.     

Preparation of flower-like Cu2O nanoparticles by pulse electrodeposition and their electrocatalytic application

A pulsed electrodeposition technique based on a multipulse sequence of potentials of equal amplitude, duration and polarity was employed for preparation of highly dispersed flower-like cuprous oxide (Cu₂O) nanoparticles. The morphology analysis of the particles using scanning electron microscope (SEM) reveals that the flower-like particles were from sequential growth of Cu₂O along the (1 1 1) direction on the cubic Cu₂O (1 0 0). The structure and the chemical composition of the deposits were characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). Optical property and band gap of the Cu₂O was investigated using UV/vis diffuse reflection spectra (DRS), and the measured value of energy gap is 2.18 eV. The dark and light open circuit potential-time characterization study showed that the flower-like Cu₂O nanoparticles exhibited good photoelectric response. Cyclic voltammetry carried out in the presence of p-nitrophenol (p-NP) shows that the electrocatalytic performance of the Cu₂O particles for the reduction of p-NP, which was characterized by a cathodic peak at around −0.6 V. The influence of the incidence of light on the electrocatalysis is also discussed.     

Preparing Cu2ZnSnS4 films using the co-electro-deposition method with ionic liquids

Cu2ZnSnS4（CZTS） films are successfully prepared by co-electrodeposition in aqueous ionic solution and sulfurized in elemental sulfur vapor ambient at 400 C for 30 min using nitrogen as the protective gas.It is found that the CZTS film synthesized at Cu/（Zn＋Sn）=0.71 has a kesterite structure,a bandgap of about 1.51 eV,and an absorption coefficient of the order of 10 4 cm 1.This indicates that the co-electrodeposition method with aqueous ionic solution is a viable process for the growth of CZTS films for application in photovoltaic devices.     

Fast and selective Cu2O nanorod growth into anodic alumina templates via electrodeposition

The fast and selective growth of cuprous oxide (Cu₂O) nanorods into anodic aluminum oxide (AAO) templates is achieved under optimized alkaline conditions via electrochemical deposition. The growth rate of Cu₂O nanorods at room temperature reached 360 nm/min, the fastest rate reported to date. The synthesis of Cu₂O nanorods by applying a constant current by using Cu₂O nanotubes as a transition state is extensively discussed; a Pt pottery-shaped layer played a key role as a seed layer for the fast Cu₂O growth. We report here the existence of regions of nanostructured Cu₂O based on our studies and previous relevant works, which include potential-pH curves for Cu²⁺-lactate solutions.     

Structural and thermodynamic properties of OsN2 from first-principles calculations

We investigate the structural and thermodynamic properties of OsN2 by a plane-wave pseudopotential density functional theory method. The obtained lattice constant,bulk modulus and cell volume per unit formula are consistent with the available theoretical data. Moreover,the pressure-induced phase transition of OsN2 from pyrite structure to fluorite structure has been obtained. It is found that the transition pressure of OsN2 at zero temperature is 67.2 GPa. The bulk modulus B as well as other thermodynamic quantities of fluorite OsN2 (including the Gru¨neisen constant γ and thermal expansion α) on temperatures and pressures have also been obtained.     

A novel one-step electron beam irradiation method for synthesis of Ag/Cu2O nanocomposites

In this paper, a novel method for fabrication of silver/cuprous oxide (Ag/Cu₂O) nanocomposites is reported. The method involves the reduction of Ag⁺ and Cu²⁺ in the aqueous solution to Ag/Cu₂O without adding any reducing reagent under electron beam (EB) irradiation. Dye methyl orange is used as the pollutant model to investigate the photocatalytic properties of these nanocomposites. The results reveal that they have higher photocatalytic efficiencies than that of Cu₂O under visible light. These visible light-sensitive catalysts may have potential application in the field of environmental remediation.