Electrical resistance and 1/f fluctuations in thin titanium films

The thickness of a metallic layer has been determined and the resistivity and spectral density of voltage fluctuations in thin titanium films with initial thicknesses of 5–100 nm, which were obtained by magnetron sputtering and intended for promising elements of the neutron optics, have been investigated. It has been found that a continuous metallic layer necessary for functioning is retained even in thinnest samples, and excess fluctuations of the layer resistance with the 1/f-type spectrum are observed. It has been shown that the method of measuring film resistivity can be used as effective express-method of determining the thickness of metallic nanolayers.     

成分和厚度的依赖

通过调整Mn的成分，系统地研究了Ni81Fe19/Ni100-xMnx双层膜的磁学性质，特别是交换偏置场(Hex)的变化.当Ni100-xMnx中Mn的原子百分比在534%到600%之间时，对于150nm的Ni81Fe19，得到了最大的交换偏置场175kA/m，同时由于Mn对Ni81Fe19层的扩散所造成的磁矩的降低小于20%；高角x射线衍射证明Ni100-xMnx的晶格常数随着Mn成分的改变而变化，Mn含量越多，其晶格常数越大；制备态Ni100-xMnx膜晶格常数与θ相NiMn膜晶格常数的接近程度与NiMn膜θ相形成的容易程度相对应.也研究了交换偏置场随着Ni１００-xMnx厚度的变化，第一次得到了当Ni100-xMnx中Mn的原子百分比为706%时，Ni81Fe19(150nm)/Ni100-xMnx(90nm)双层膜在经过240℃，5h退火后，可以有80kA/m的交换偏置场，此时铁磁层磁矩的大小几乎不变. 关键词： Ni81Fe19/Ni100-xMnx 交换偏置场     

Epitaxial alloyed films out of the bulk stability domain: Surface structure and composition of Ni3Al and NiAl films on a stepped Ni(1 1 1) surface

We have studied by Spot Profile Analysis Low Energy Electron Diffraction (SPA-LEED) and Auger Electron Spectroscopy (AES) Ni–Al alloyed layers formed by annealing, around 780 K, Al deposits on a stepped Ni(1 1 1) surface. The surface structure and composition of the thin epitaxial Ni₃Al and NiAl films, obtained respectively below and above a critical Al initial coverage θ_c, differ markedly from those of corresponding bulk alloys.The Ni₃Al ordered films form in a concentration range larger than the stability domain of the L1₂ Ni₃Al phase. The NiAl films present a marked distortion with respect to the lattice unit cell of the B2 NiAl phase, which slowly decreases when the film thickness increases.It also appears that the value of θ_c depends on the morphology of the Ni(1 1 1) substrate, increasing from θ_c = 4.5 ML for a flat surface to θ_c = 10 ML for a surface with a miscut of 0.4°. This could be directly related to the presence of steps, which favour Ni–Al interdiffusion.     

Surface composition and structure of palladium ultra-thin films deposited on Ni(1 1 1)

Ultra-thin palladium films deposited on the Ni(1 1 1) surface were characterized by X-ray photoelectron spectroscopy (XPS), low-energy electron diffraction (LEED) and X-ray photoelectron diffraction (XPD). For low coverage, LEED shows a (1 × 1) pattern similar to that of the substrate. For intermediate coverage, the LEED pattern displays extra spots around the main (1 × 1) spots, resembling a Moiré coincidence pattern, probably associated with the formation of Pd bi-dimensional islands oriented in different directions on the Ni(1 1 1) surface. The results obtained by XPS and XPD corroborate this finding. The LEED pattern displays this structure up to 500 °C. Annealing at 650 °C brings back the (1 × 1) pattern, which is associated with a Pd island coalescence and alloy formation by Pd diffusion in the first atomic layers of the Ni(1 1 1). In this paper we present a detailed study of this surface structure via a comparison between XPD experiment and theory.     

1/f noise generated by equilibrium temperature fluctuations in metal films

A model of flicker noise generated by quasi-equilibrium temperature fluctuations for metal films on dielectric substrates is examined. A hyperbolic thermal-conductivity equation is solved that describes temperature-fluctuation propagation at a finite velocity with allowance for energy dissipation in the specimen. A formula is derived for the energy spectrum of flicker-voltage fluctuations at frequencies of 10^–5–10⁵ Hz.Moscow Institute of Electronic Engineering. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol. 37, No. 2, pp. 161–182, February, 1994.     

Monte Carlo simulation of spin-wave excitation for the magnetic films with structure and interaction fluctuations

Monte Carlo simulation studies are performed to examine influence of structure and interaction fluctuations on magnetic properties of a ferromagnetic system modelled with a Heisenberg Hamiltonian. It is found that the spontaneous magnetization at low temperature for the multilayered films decreases with temperature in a Bloch law of spin-wave excitations. Both Bloch coefficient B and exponent b vary evidently because of a strong surface and size effect in the finite magnetic films with free boundaries. For the disordered bulk FCC magnet with periodic boundary, the Bloch T^3/2 law is followed at low temperature and B is greatly influenced by the structure and interaction fluctuations. At the same time, Bloch coefficient B of the amorphous magnet with the coordination and interaction fluctuations has been derived. The simulated results are in good agreement with the theoretical predictions of spin-wave excitation, and explain the experimental facts well.     

Algebraic structure of quantum fluctuations

On the basis of the existence of second and third moments of fluctuations, we prove a theorem about the Lie-algebraic structure of fluctuation operators. This result gives insight into the quantum character of fluctuations. We illustrate the presence of a Lie algebra of fluctuation operators in a model of the anharmonic crystal, and show the dependence of the Lie-algebra structure on the fine structure of the fluctuation operator algebra. The result is also applied to construct the normal Goldstone mode in the ideal Bose gas for Bose-Einstein condensation     

Ni,Fe离子掺杂对Ge-Sb-Se薄膜的结构与性能影响研究

采用低温烧结靶材，以电子束蒸发方法制备了掺Fe和掺Ni的Ge-Sb-Se薄膜，所制备的薄膜均为p型半导体.用AFM，UV-VIS，Hall和阻抗分析仪研究了薄膜的形貌、结构和性能.研究表明薄膜形成时的成膜离子活性大、掺杂元素与系统本征元素电负性间差值小以及一定的热处理后，薄膜的网络结构相对较完整，网络畸变较小，缺陷也较少.掺杂Fe，Ni既可参与Ge-Sb-Se薄膜成键，影响网络结构的完整性；也会在费米能级附近引入缺陷态密度，增加了对载流子跃迁的陷阱作用.与Fe掺杂相比，Ni掺杂使薄膜具有较完整的网络结构，较低的中性悬挂键浓度和在交变电场下可具有较少的极化子产生，相应粗糙度较小、光学带隙较宽、载流子迁移率较高、载流子浓度较低和薄膜介电损耗较小. 关键词： Fe Ni掺杂 低温烧结靶材 Ge-Sb-Se薄膜     

Quantum size effect driven structure modifications of Bi films on Ni(111)

The quantum-size effect (QSE) driven growth of Bi film structures on Ni(111) was studied in situ using low energy electron microscopy and selective area low energy electron diffraction (μLEED). Domains with a (3×3), [(3)(1)(-1)(2)], and (7×7) film structure are found with a height of 3, 5, and 7 atomic layers, respectively. A comparison of I/V-μLEED curves with tensor LEED calculations shows perfectly accommodated Fermi wavelengths, indicative that not only the quantized height, but also the film structure is driven by QSE.     

The critical layer number of epitaxially grown Cu and Ni films with strained structure

The thickness dependent structural transition of epitaxially grown thin films from a tetragonal structure to the corresponding bulk structure is thermodynamically considered. It is found that there exists a competition between elastic energy of the tetragonal structure and film–substrate interface energy. Equilibrium between these energies is present at a critical layer number n_c. The predictions for n_c are in agreement with the experimental results of some different metallic films deposited on fcc metallic substrates.     

Magnetic phase diagram of ordered (Fe1-xMnx)Pt alloys

The magnetic structure and magnetic phase transitions of ordered (Fe_1-xMn_x)Pt alloys were investigated by neutron diffraction in the temperature range 4.2–900 K. A complete magnetic phase diagram is drawn up, where the regions for different magnetic states and the character of transitions between them are shown. The theoretical analysis of the magnetic phase stability is given.     

Magnetic properties of the pseudo-binary Fe2(Nb1-xMnx)

The magnetic behavior of the pseudo-binary system Fe₂(Nb_1-xMn_x) is investigated by means of the experimental techniques of X-ray diffraction (XRD), Mössbauer Spectroscopy (MS) and magnetization studies. The XRD results indicate that, up to x=0.3, all samples are single phase with hcp structure. This corresponds to the solubility limit of manganese in this phase. Above x=0.3, all prepared samples present the coexistence of three phases, two with hcp structure and one fcc. The magnetization measurements at low temperatures indicate that the transition temperature increases with the addition of Mn atoms in the Fe₂Nb host (T_N=10 K) up to 58 K for x=0.1. The Mössbauer spectra were fitted with a quadrupole splitting distribution, which indicates that the average quadrupolar splitting increases slightly with the increase of the manganese concentration.     

Field emission from self-assembly structure of carbon-nanotube films

Chemical vapor deposited (CVD) carbon nanotube (CNT) arrays were immersed in ethanol to make shrunk structures with separate nanotube “walls” for better field emission properties, such structures decreased the screening effects and reduced the turn-on electric field at 10 μA/cm² from 1.68 to 1.23 V/μm. The field enhancement factor was calculated to increase by 23% according to Fowler–Nordheim (F–N) equation. The number of emission sites also increased and their distribution was more uniform.     

Magnetic properties of ultrathin Ni films

The magnetic properties of Au/Ni/Si(100) films with Ni thicknesses of 8–200 Å are studied at T=77 K using a scanning magnetic microscope with a thin-film high-temperature dc SQUID. It is found that the Ni films, with an area of 0.6×0.6 mm, which are thicker than 26 Å have a single-domain structure with the magnetic moment oriented in the plane of the film and a saturation magnetization close to 0.17 MA/m. For films less than 26 Å thick, the magnetization of the film is found to drop sharply.     

Sub-picosecond UV-laser ablation of Ni films

Laser ablation of thin Ni films on fused silica by 0.5 ps KrF-excimer-laser pulses at 248 nm is reported. The onset of material removal from different film thicknesses (0.1, 0.3, 0.6 and 1.0 m) was measured in a laser ionization time-of-flight mass spectrometer by the amount of Ni atoms vs laser fluence. Significant amounts of metal atoms are already evaporated at laser fluences around 20 mJ/cm², a threshold up to 100 times smaller compared to the one for 14 ns pulses. In contrast to ns laser pulses, the ablation threshold for 0.5 ps pulses is independent of the film thickness. These results reflect the importance of thermal diffusion in laser ablation of strongly absorbing and thermally good conducting materials and prove that for ablation with short pulses, energy loss to the bulk is minimized.