Thermal conductivity of indium at high pressures and temperatures under shock compression

The results of investigations of the electrical and thermal conductivity of indium in the pressure range up to 27 GPa and at temperatures up to 1000 K are presented. In this pressure range, the electrical resistance of indium samples is measured under multishock compression. The equation of state constructed for indium is used to calculate the evolution of the thermodynamic parameters of indium in shock wave experiments; then, the dependences of the electrical resistivity and thermal conductivity coefficient on the volume and temperature are determined. It is demonstrated that, in the pressure and temperature ranges under investigation, the thermal conductivity coefficient of indium does not depend on temperature and its threefold increase is caused only by the change in the volume under compression.     

Thermal conductivity of a moderate heavy-fermion compound YbZnCu4

The thermal conductivity κ and electrical resistivity ρ of a cast polycrystalline sample of YbZnCu₄, which belongs to the class of moderately heavy-fermion compounds, are measured and studied in the temperature range 5–300 K. It is shown that the phonon thermal conductivity of the sample follows an amorphous-like pattern throughout the temperature range under investigation, which should be assigned to the presence of Yb ions with a homogeneous mixed valence in this compound. The temperature dependence ρ(T) has two specific portions: a high-temperature portion (T > 220 K) characteristic of conventional metals and a moderate-temperature portion (14–35 K) typical of Kondo compounds.     

Magnetic and electrical properties of bismuth cobaltite Bi24(CoBi)O40 with charge ordering

The compound Bi₂₄(CoBi)O₄₀ has been synthesized using the solid-phase reaction method. The temperature and field dependences of the magnetic moment in the temperature range 4 K < T < 300 K and the temperature dependences of the EPR line width and g-factor at temperatures 80 K < T < 300 K have been investigated. The electrical resistivity and thermoelectric power have been measured in the temperature range 100 K < T < 1000 K. The activation energy has been determined and the crossover of the thermoelectric power from the phonon mechanism to the electron mechanism with variations in the temperature has been observed. The thermal expansion coefficient of the samples has been measured in the temperature range 300 K < T < 1000 K and the qualitative agreement with the temperature behavior of the electrical resistivity has been achieved. The electrical and structural properties of the compound have been explained in the framework of the model of the electronic-structure transition with inclusion of the exchange and Coulomb interactions between electrons and the electron-phonon interaction.     

Thermal conductivity of selenium doped with indium and iodine in the solid and liquid states

We have measured the thermal conductivity in both the solid and liquid states for two amorphous samples. The first was selenium doped with indium and the second was selenium doped with iodine. The concentration of In and I in both samples was 50000 ppm in weight, which is equal to 3.33% for indium and 3.02% for iodine additives in atomic percent. The measurements were taken in the temperature range from 100 to 470°C and were carried out using the concentric cylindrical wall. It was found that the thermal conductivity of both samples is of the phonon type; its temperature dependence follows the relation K _ph T ^–1, and can be explained by the influence of thermal effects on the lattice structure.     

Effect of pressure on the temperature dependence of the thermal conductivity of InSb

The dependence of the thermal conductivity of indium antimonide on temperature (in the range 300–450 K) and hydrostatic pressure (up to 0.4 GPa) has been investigated. It is shown that the phonon thermal conductivity λ_ph obeys the law T ^?n (n ≥ 1). Hydrostatic pressure affects the magnitude and temperature dependence of the thermal conductivity of InSb: with an increase in pressure, the thermal conductivity increases, while the parameter n in the dependence λ_ph ≈ T ^?n decreases.     

Thermal conductivity of the YbMgCu<Subscript>4</Subscript> “light” heavy-fermion system

The thermal conductivity and electrical resistivity of a sample of YbMgCu₄ belonging to “light” heavy-fermion compounds have been measured in the temperature range 5–300 K. The sample studied was in the region of homogeneity of this compound. It is shown that, throughout the temperature range studied, the phonon thermal conductivity of the sample has an amorphous-like character, which should be assigned to the homogeneous mixed valence of the Yb ion in YbMgCu₄.     

Electrical and optical properties of reactive dc magnetron sputtered silver-doped indium oxide thin films: role of oxygen

Silver-doped indium oxide thin films have been prepared on glass and quartz substrates at room temperature (300 K) by a reactive dc magnetron sputtering technique using an alloy target of pure indium and silver (80:20 at. %). During sputtering, the oxygen flow rates are varied in the range 0.00–2.86 sccm keeping the magnetron power constant at 40 W. The resistivity of these films is in the range 10⁰–10^-3 Ω cm and they show a negative temperature coefficient of resistivity. The films exhibit p-type conductivity at an oxygen flow rate of 1.71 sccm. The work function of these silver–indium oxide films has been measured by a Kelvin probe technique. The refractive index of the films (at 632.8 nm) varies in the range 1.13–1.20. Silver doping in indium oxide narrows the band gap of indium oxide (3.75 eV). PACS 73.30.+y; 81.15.Cd; 78.20.Ci; 73.61.Le     

Thermal conductivity and electrical resistivity of the high-Tc superconductor YBa2Cu3O9−Δ

Thermal conductivity and electrical resistivity of single-phase YBa₂Cu₂O_9−Δ compound were measured in the superconducting (T_c=89.5 K) and normal states, in the temperature range 5–320 K. The electronic component of the total thermal conductivity was estimated to be 20%. The electrical resistivity changed linearly in the normal state up to highest measured temperature.     

Electrical properties of ZnO stabilized beta″-alumina

The electrical conductivity of ZnO doped (1?5 wt%) beta″-alumina ceramic samples has been measured by the complex admittance method. The smallest value of electrical resistivity was in the case of the samples doped with 3 wt% ZnO. The bulk conductivity dependence (in lnσT?1/T coordinates) is characterized by two slopes, with a bend occuring at about 250°C. The low temperature activation energy of bulk conductivity is not influenced by the doping level. The high temperature activation energy decreases with increasing ZnO content. The change in the slope of the Arrhenius plot of the beta-alumina bulk conductivity is in agreement with what should be expected from Wang's model.     

Thermal conductivity of a moderate heavy-fermion compound YbIn0.2Ag0.8Cu4

The thermal conductivity κ and electrical resistivity ρ of a cast polycrystalline sample of YbIn_0.2Ag_0.8Cu₄, which belongs to the class of moderate heavy-fermion compounds, are measured in the temperature range 5–300 K. It is shown that the phonon thermal conductivity of the sample follows an amorphous-like pattern throughout the temperature range covered, which should be assigned to the presence of Yb ions with a homogeneous mixed valence in this compound. The temperature dependence ρ(T) is divided into three portions: a high-temperature portion characteristic of conventional metals, a medium-temperature portion typical of Kondo compounds, and a low-temperature portion corresponding to a coherent Kondo lattice (the heavy-fermion regime). The Kondo temperature is estimated.     

C-axis thermoelectric transport in low stage SbCl5 graphite intercalation compounds

c-axis thermal conductivity, electrical resistivity and thermopower measurements performed on stages-2, 3 and 4 SbCl₅-graphite intercalation compounds in the temperature range 3 < T < 300 K are reported. Contrary to the electrical resistivity and thermopower data, the temperature variation of the thermal conductivity is qualitatively different from that previously observed on other intercalation compounds.     

Thermal conductivity of high-porosity cellular-pore biocarbon prepared from sapele wood

This paper reports on measurements (in the temperature range T = 5–300 K) of the thermal conductivity κ(T) and electrical conductivity σ(T) of the high-porosity (～63 vol %) amorphous biocarbon preform with cellular pores, prepared by pyrolysis of sapele wood at the carbonization temperature 1000°C. The preform at 300 K was characterized using X-ray diffraction analysis. Nanocrystallites 11–30 Å in ize were shown to participate in the formation of the carbon network of sapele wood preforms. The dependences κ(T) and σ(T) were measured for the samples cut across and along empty cellular pore channels, which are aligned with the tree growth direction. Thermal conductivity measurements performed on the biocarbon sapele wood preform revealed a temperature dependence of the phonon thermal conductivity that is not typical of amorphous (and X-ray amorphous) materials. The electrical conductivity σ was found to increase with the temperature increasing from 5 to 300 K. The results obtained were analyzed.     

Thermal transport properties in the normal state of CaAlxSi2−x superconductors

Normal state electrical and thermal properties, including electrical resistivity (ρ), Seebeck coefficient (S), and thermal conductivity (κ) of the CaAl_xSi_2−x (x=0.9-1.2) system were investigated. It is found that the electrical resistivity and Seebeck coefficient exhibit a typical metallic character throughout the temperature range investigated, and the metallicity of this series is enhanced with increase in Al/Si ratio. On the other hand, the thermal conductivity shows a weak temperature variation at low temperatures, whereas κ follows a T²-dependence for T>150 K. Analysis of the electronic thermal resistivity based on Klemen’s model reveals that the scattering of electrons from the defects and static imperfections becomes dominant as the temperature approaches T_c. These results are discussed in the light of simultaneous existence of various crystal structures and development of ultra-soft phonon mode recently observed in the CaAlSi system.     

Thermal and electrical properties of a white-eucalyptus carbon preform for SiC/Si ecoceramics

The thermal conductivity κ and electrical resistivity ρ of a white-eucalyptus cellular carbon preform used to fabricate silicon-carbide-based (SiC/Si) biomorphic ceramics have been measured in the 5-to 300-K temperature interval. The carbon preform was obtained by pyrolysis (carbonization) of white-eucalyptus wood at 1000°C in an argon ambient. The κ(T) and ρ(T) relations were measured on samples cut along the tree growth direction. The experimental data obtained were processed.     

The effect of Fe substitution on the electrical and thermal conductivity and thermopower of Ca3(FexCo1−x)4O9 synthesised by a sol–gel process

The effect of Fe substitution for Co on direct current (DC) electrical and thermal conductivity and thermopower of Ca₃(Co_1−xFe_x)₄O₉ (x = 0, 0.05, 0.08), prepared by a sol–gel process, was investigated in the temperature range from 380 down to 5K. The results indicate that the substitution of Fe for Co results in an increase in thermopower and DC electrical resistivity and substantial (14.9–20.4% at 300K) decrease in lattice thermal conductivity. Experiments also indicated that the temperature dependence of electrical resistivity ρ for heavily substituted compounds Ca₃(Co_1−xFe_x)₄O₉ (x = 0.08) obeyed the relation lnρ ∝ T^−1/3 at low temperatures, T < ~55K, in agreement with Mott’s two-dimensional (2D) variable range hopping model. The enhancement of thermopower and electrical resistivity was mainly ascribed to a decrease in hole carrier concentration caused by Fe substitution, while the decrease of thermal conductivity can be explained as phonon scattering caused by the impurity. The thermoelectric performance of Ca₃Co₄O₉ was not improved in the temperature range investigated by Fe substitution largely due to great increase in electrical resistivity after Fe substitution.     

Features of superconducting transition in nanocomposite consisting of “insulating matrix (porous alkali-borosilicate glass)” – “granular metallic filler (indium)”

Patterns in temperature and magnetic field behavior of the electrical resistance of nanocomposite consisting of “insulating matrix (7 nm-pore alkali-borosilicate glass)” – “granular metallic filler (indium)” (PG7+In) has been found and analyzed in the vicinity of superconducting transition. Insulating behavior in the electrical resistivity has been observed in a normal state. External magnetic field shifts the transition to lower temperatures and the same time gradually strengths the insulating behavior above the superconducting transition. Hopping conductivity mechanism developed for the granular conductor systems can be responsible for the insulating behavior in normal-state electrical resistance. Electron hopping in the granular conductor system is realized as tunneling of electrons through intergranular contacts between the metallic granules. The superconducting transition has been found to be rather broad. Broadening in the superconducting transition can be attributed to fluctuation conductivity. Above the superconducting transition, the Aslamazov-Larkin contribution to the conductivity characteristic for three-dimensional systems has been found to be main correction to the conductivity.     

Effect of substrate temperature on structural, optical and electrical properties of pulsed laser ablated nanostructured indium oxide films

Nanocrystalline indium oxide (INO) films are deposited in a back ground oxygen pressure at 0.02 mbar on quartz substrates at different substrate temperatures (T_s) ranging from 300 to 573 K using pulsed laser deposition technique. The films are characterized using GIXRD, XPS, AFM and UV-visible spectroscopy to study the effect of substrate temperature on the structural and optical properties of films. The XRD patterns suggest that the films deposited at room temperature are amorphous in nature and the crystalline nature of the films increases with increase in substrate temperature. Films prepared at T_s ≥ 473 K are polycrystalline in nature (cubic phase). Crystalline grain size calculation based on Debye Scherrer formula indicates that the particle size enhances with the increase in substrate temperature. Lattice constant of the films are calculated from the XRD data. XPS studies suggest that all the INO films consist of both crystalline and amorphous phases. XPS results show an increase in oxygen content with increase in substrate temperature and reveals that the films deposited at higher substrate temperatures exhibit better stoichiometry. The thickness measurements using interferometric techniques show that the film thickness decreases with increase in substrate temperature. Analysis of the optical transmittance data of the films shows a blue shift in the values of optical band gap energy for the films compared to that of the bulk material owing to the quantum confinement effect due to the presence of quantum dots in the films. Refractive index and porosity of the films are also investigated. Room temperature DC electrical measurements shows that the INO films investigated are having relatively high electrical resistivity in the range of 0.80-1.90 Ωm. Low temperature electrical conductivity measurements in the temperature range of 50-300 K for the film deposited at 300 K give a linear Arrhenius plot suggesting thermally activated conduction. Surface morphology studies of the films using AFM reveal the formation of nanostructured indium oxide thin films.     

Low temperature specific heat and thermal conductivity of bulk metallic glass (Cu50Zr50)94Al6

The low temperature specific heat and thermal conductivity of (Cu₅₀Zr₅₀)₉₄Al₆ bulk metallic glass have been studied experimentally. A low temperature anomaly in the specific heat is observed in this alloy. It is also found that in addition to Debye oscillators, the localized vibration modes whose vibration density of state has a Gaussian distribution should be considered to explain the low temperature phonon specific heat anomaly. The phonon thermal conductivity dependence on temperature for the sample does not show apparent plateau characteristics as other glass materials do; however, the influence of the resonant scattering from the localized modes on the lattice thermal conductivity is prominent in the bulk metallic glass at low temperatures.     

Thermal conductivity of HgSe loaded in the pore lattice of a synthetic opal single crystal

Samples of the opal + HgSe nanocomposite with 100% filling of the first-order opal pores by mercury selenide were prepared. The effective thermal conductivity κ_eff and electrical resistivity ρ_eff were measured in the temperature range T=5–200 K, and the thermopower coefficient α was measured in the interval 80–300 K. The coefficient α of HgSe in opal was shown to remain the same as that in bulk mercury selenide samples with similar carrier concentrations. The mechanism of carrier scattering in the HgSe loaded in opal also did not change. The total thermal conductivity κ _tot ⁰ and electrical resistivity ρ⁰ were isolated from κ_eff and ρ_eff, and the electronic (κ _e ⁰ ) and lattice (κ _ph ⁰ ) components of thermal conductivity of HgSe in opal were determined. The magnitude of κ _ph ⁰ was found to be considerably smaller than κ_ph of bulk HgSe with the same carrier concentration throughout the temperature interval studied (5–200 K). For T>20 K, this behavior of κ _ph ⁰ (T) is accounted for by the presence of specific impurities and defects forming in HgSe, and for T<20 K, by the onset of boundary scattering of phonons in the bottlenecks of the horn-shaped channels connecting first-order octahedral and tetrahedral opal pores loaded by mercury selenide.     

Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5–300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ～30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.