有限尺寸石墨烯的电子态

根据π电子的紧束缚模型, 通过有限系统的Bloch定理方法, 解析计算了有限尺寸石墨烯的电子态和能带. 研究发现, 其电子态有且只有两类, 分别是驻波态和边缘态.驻波态时, 波函数形式是两个方向都是正弦函数; 边缘态时, 波函数形式是Armchair边界的方向是双曲正弦函数, Zigzag边界的方向是正弦函数. 其能带由总碳原子数N个离散的本征值组成, 推导了定量计算边缘态的本征值个数的表达式, 并通过态密度来分析边缘态的存在和与无限大情况的一致性. 所有的分析中数值结果与解析理论都完全一致, 当两个受限方向都变成无限长时, 可以得到与无限大石墨烯相同的结果. 关键词： 紧束缚模型 石墨烯 边缘态 态密度     

锯齿型石墨烯纳米带的能带研究

运用π电子紧束缚模型,具体研究了锯齿型石墨烯纳米带(ZGNRs)的边界结构对能带,特别是费米面附近的导带和价带电子的影响.计算了七种不同边界结构的ZGNRs的能带色散关系及费米面附近价带电子在原胞中各原子上的分布情况.计算结果表明:两边界都无悬挂原子的NN-ZGNRs,只有一边界有悬挂原子的DN-ZGNRs,两边界都有五边形环的SPP-ZGNRs和ASPP-ZGNRs为金属性.两边界都有悬挂原子的DD-ZGNRs,一边界为五边形环另一边界无悬挂原子的PN-ZGNRs和一边界为五边形环另一边界有悬挂原子的P 关键词： 锯齿型石墨烯纳米带 紧束缚模型 电子密度分布 缺陷结构     

石墨烯纳米带电子结构的紧束缚法研究

在推导出的一般复式格子的π电子紧束缚能量色散关系的基础上,通过假定石墨烯纳米带的电子横向限制势为无穷大硬壁势,导出石墨烯纳米带的能量色散关系及石墨烯纳米带或为金属或为半导体的条件.结果表明：石墨烯纳米带的电子结构与其几何构型（对称性及宽度）密切相关,所以通过控制几何构型,可将其调制成金属或不同带隙的半导体.这意味着石墨烯纳米带对于发展新型纳米器件具有重要意义. 关键词： 石墨烯纳米带 复式格子 紧束缚模型 电子结构     

多孔石墨烯纳米片电学性质的研究

采用紧束缚近似方法,研究了三角形锯齿型石墨烯纳米片(Triangular zigzag graphene nanosheets, TZGN)的电子结构.研究表明单孔TZGN结构的零能级都是外边缘态,跟孔的大小没有关系.多孔TZGN结构受孔间结构的影响,零能级会随着孔数目的增加逐渐出现内外边缘耦合态,导带和价带能级个数也会随着孔的大小和孔的数量的增加而减少.研究结果拓宽了石墨烯纳米结构在纳机电器件方面的应用.     

周期性纳米洞内边缘氧饱和石墨烯纳米带的电子特性

利用基于密度泛函理论的第一性原理方法,研究了内边缘氧饱和的周期性凿洞石墨烯纳米带（G NR）的电子特性. 研究结果表明：对于凿洞锯齿形石墨烯纳米带（ZGNRs）,在非磁性态时不仅始终为金属,且金属性明显增强;反铁磁态（AFM）时为半导体的ZGNR,凿洞后可能成为金属;但铁磁态（FM）为金属的ZGNR,凿洞后一般变为半导体或半金属. 而对于凿洞的扶手椅形石墨烯（AGNRs）,其带隙会明显增加. 深入分析发现：这是由于氧原子对石墨烯纳米带边的电子特性有重要的影响,以及颈次级纳米带（NSNR）及边缘次级纳米带（ESNR）的不同宽度及边缘形状（锯齿或扶手椅形）能呈现出不同的量子限域效应. 这些研究对于发展纳米电子器件有重要的意义. 关键词： 石墨烯纳米带 纳米洞 内边缘氧饱和 电子特性     

金掺杂锯齿型石墨烯纳米带的电磁学特性研究

本文采用基于密度泛函理论的第一性原理计算了金原子填充锯齿型石墨烯纳米带 (ZGNRs)中双空位结构的电磁学特性. 计算结果表明: 边缘位置是金原子的最稳定掺杂位置, 杂质原子的引入导致掺杂边缘的磁性被抑制, 不过掺杂率足够大时, 掺杂边缘的磁性反而恢复了. 金掺杂纳米带的能带结构对掺杂率敏感: 随着掺杂率的增大, 掺杂纳米带分别表现半导体特性、半金属特性以及金属特性. 本文的计算表明金原子掺杂可以调制ZGNR的磁性以及能带特性, 为后续实验起指导作用, 有利于推动石墨烯材料在自旋电子学方面的应用.     

铂掺杂扶手椅型石墨烯纳米带的电学特性研究

本文采用基于密度泛函理论(DFT)的第一性原理计算了铂原子填充扶手椅型石墨烯纳米带(AGNR)中双空位结构的电学性能.计算结果表明: 通过控制铂原子的掺杂位置, 可以实现纳米带循环经历小带隙半导体—金属—大带隙半导体的相变过程; 纳米带边缘位置是铂原子掺杂的最稳定位置, 边缘掺杂纳米带的带隙值随宽度的变化与本征AGNR一样可用三簇曲线表示, 但在较大宽度时简并成两条曲线, 一定程度上抑制了带隙值的振荡; 并且铂原子边缘掺杂导致宽度系数N_a = 3p和3p + 1(p是一个整数)的几个较窄纳米带的带隙中出现杂质能级, 有效地降低了其过大的带隙值. 此外, 铂掺杂AGNR的能带结构对掺杂浓度不是很敏感, 从而降低了对实验精度的挑战. 本文的计算有利于推动石墨烯纳米带在纳米电子学方面的应用.     

羟基饱和锯齿型石墨烯纳米带的电子结构

利用密度泛函理论,计算了羟基饱和锯齿型石墨烯纳米带(OH-ZGNRs)的相对稳定性和外加横向电场对其电子结构的影响.计算结果表明:OH-ZGNRs比氢饱和ZGNRs(H-ZGNRs)更为稳定,具有窄带隙自旋极化基态.此外,在外加横向电场作用下,OH-ZGNRs可实现半导体到半金属相转变. 关键词： 石墨烯纳米带 密度泛函理论 电场     

单空位缺陷诱导的扶手椅型石墨烯纳米带电学性能的转变

本文基于密度泛函理论的第一性原理计算了单空位缺陷对 扶手椅型石墨烯纳米带电学特性的影响. 计算结果表明: 当单空位位于纳米带边缘位置时, 系统结构最稳定. 不同位置上单空位缺陷的引入都会使得原本为半导体的本征 扶手椅型石墨烯纳米带变成金属性; 随着单空位浓度的减小, 其对纳米带能带结构的影响逐渐减弱; 随着纳米带宽度的增大, 表征其金属性的特征值表现出震荡性的减弱. 单空位缺陷诱导的扶手椅型纳米带的半导体特性到金属特性的转变为石墨烯在 电子器件中的应用提供了理论指导. 关键词： 扶手椅型石墨烯纳米带 单空位缺陷 电学性能     

Band structure and edge states of star-like zigzag graphene nanoribbons

Connecting three zigzag graphene nanoribbons(ZGNRs) together through the sp~3 hybrid bonds forms a star-like ZGNR(S-ZGNR). Its band structure shows that there are four edge states at k = 0.5, in which the three electrons distribute at three outside edge sites, and the last electron is shared equally(50%) by two sites near the central site. The lowest conductance step in the valley is 2, two times higher than that of monolayer ZGNR(M-ZGNR). Furthermore, in one quasithree-dimensional hexagonal lattice built, both of the Dirac points and the zero-energy states appear in the band structure along the z-axis for the fixed zero k-point in the x-y plane. In addition, it is an insulator in the x-y plane due to band gap 4 eV, however, for any k-point in the x-y plane the zero-energy states always exist at k_z = 0.5.     

锯齿型石墨纳米带叠层复合结的电子输运

基于紧束缚格林函数方法,研究了两半无限长锯齿型石墨纳米带叠层复合结的电子输运性质.结果表明,层间次近邻相互作用、叠层区长度及门电压对复合结的电子透射谱有重要调制作用.层间次近邻相互作用导致复合结的透射谱关于费米能呈现非对称性,与实验结果很好相符.低于费米能第一子能区内周期性出现透射系数为0和1的台阶,呈现全反射与透射现象.随散射结长度增加,透射系数在1内周期性振荡,呈现明显的量子干涉效应.在门电压调控下,低于费米能的透射系数出现了从1到0的转变,类似于开关效应.相关结果对基于石墨烯器件的设计与应用有指导意义.     

Edge magnetization in Bernal-stacked trilayer zigzag graphene nanoribbons

We have used a tight-binding Hamiltonian of an ABA-stacked trilayer zigzag graphene nanoribbon with β-alignment edges to study the edge magnetizations. Our model includes the effect of the intralayer next-nearest-neighbor hopping, the interlayer hopping responsible for the trigonal warping and the interaction between electrons, which is considered by a single band Hubbard model in the mean field approximation. Firstly, in the neutral system we analyzed the two magnetic states in which both edge magnetizations reach their maximum value; the first one is characterized by an intralayer ferromagnetic coupling between the magnetizations at opposite edges, whereas in the second state that coupling is antiferromagnetic. The band structure, the location of the edge-state bands and the local density of states resolved in spin are calculated in order to understand the origins of the edge magnetizations. We have also introduced an electron doping so that the number of electrons in the ribbon unit cell is higher than in neutral case. As a consequence, we have obtained magnetization steps and charge accumulation at the edges of the sample, which are caused by the edge-state flat bands.     

Modulating magnetism of nitrogen-doped zigzag graphene nanoribbons

We present a study of electronic properties of zigzag graphene nanoribbons （ZGNRs） substitutionally doped with nitrogen atoms at a single edge by first principle calculations. We find that the two edge states near the Fermi level sepa- rate due to the asymmetric nitrogen-doping. The ground states of these systems become ferromagnetic because the local magnetic moments along the undoped edges remain and those along the doped edges are suppressed. By controlling the charge-doping level, the magnetic moments of the whole ribbons are modulated. Proper charge doping leads to interest- ing half-metallic and single-edge conducting ribbons which would be helpful for designing graphene-nanoribbon-based spintronic devices in the future.     

First principle study of edge topological defect-modulated electronic and magnetic properties in zigzag graphene nanoribbons

Zigzag graphene nanoribbon(ZGNR) is a promising candidate for next-generation spintronic devices. Development of the field requires potential systems with variable and adjustable electromagnetic properties. Here we show a detailed investigation of ZGNR decorated with edge topological defects(ED-ZGNR) synthesized in laboratory by Ruffieux in 2015[Pascal Ruffieux, Shiyong Wang, Bo Yang, et al. 2015 Nature 531 489]. The pristine ED-ZGNR in the ground state is an antiferromagnetic semiconductor, and the acquired band structure is significantly changed compared with that of perfect ZGNR. After doping heteroatoms on the edge, the breaking of degeneration of band structure makes the doped ribbon a half-semi-metal, and nonzero magnetic moments are induced. Our results indicate the tunable electronic and magnetic properties of ZGNR by deriving unique edge state from topological defect, which opens a new route to practical nano devices based on ZGNR.     

Electronic and transport properties of V-shaped defect zigzag MoS_2 nanoribbons

Based on the nonequilibrium Green＇s function （NEGF） in combination with density functional theory （DFT） calcu- lations, we study the electronic structures and transport properties of zigzag MoS2 nanoribbons （ZMNRs） with V-shaped vacancy defects on the edge. The vacancy formation energy results show that the zigzag vacancy is easier to create on the edge of ZMNR than the armchair vacancy. Both of the defects can make the electronic band structures of ZMNRs change from metal to semiconductor. The calculations of electronic transport properties depict that the currents drop off clearly and rectification ratios increase in the defected systems. These effects would open up possibilities for their applications in novel nanoelectronic devices.     

Electronic transport properties on V-shaped-notched zigzag graphene nanoribbons junctions

Using nonequilibrium Green?s functions in combination with the density functional theory, the spin-dependent electronic transport properties on V-shaped notched zigzag-edged graphene nanoribbons junctions have been calculated. The results show that the electronic transport properties are strongly depending on the type of notch and the symmetry of ribbon. The spin-filter phenomenon and negative differential resistance behaviors can be observed. A physical analysis of these results is given.