N2O Plasma表面处理对SiNx基IGZO-TFT性能的影响

采用N₂O plasma处理SiN_x薄膜作为绝缘层,以室温下沉积的铟镓锌氧化物(IGZO)作为有源层制备了 IGZO薄膜晶体管。与常规的IGZO-TFT相比,N₂O plasma处理过的IGZO-TFT的迁移率由原来的4.5 cm²·V^-1·s^-1增 加至8.1 cm²·V^-1·s^-1,阈值电压由原来的11.5 V减小至3.2 V,亚阈值摆由原来的1.25 V/decade减小至0.9 V/decade。采用C-V方法计算了两种器件的陷阱态,结果发现N₂O plasma处理过的IGZO-TFT的陷阱态明显小于普通的IGZO-TFT的陷阱态,表明N₂O plasma处理SiN_x绝缘层是一种改善IGZO-TFT器件性能的有效方法。     

溶胶凝胶法制备透明IZO薄膜晶体管

采用溶胶凝胶法制备了非晶铟锌氧化物(a-IZO)薄膜,并作为薄膜晶体管(TFT)的有源层制备了a-IZO TFT。研究了IZO薄膜中铟锌比对薄膜性质及a-IZO TFT器件性能的影响。结果表明:溶胶凝胶法制备的IZO薄膜经低温(300℃)退火后为非晶结构,薄膜表面均匀平整、致密,颗粒大小为20 nm左右,并具有高透过率(>85%)。IZO薄膜中的铟锌比对薄膜的电学性能和TFT器件特性影响显著,增加In含量有利于提高薄膜和器件的迁移率。当铟锌比为3∶2时,所获得的薄膜适合于作为薄膜晶体管的有源层,制备的IZO-TFT经过相对低温(300℃)退火处理具有较好的器件性能,阈值电压为1.3 V,载流子饱和迁移率为0.24 cm2·V-1·s-1,开关比(Ion∶Ioff)为105。     

IGZO薄膜溅射功率对IGZOTFT栅电压不稳定性的影响

采用不同溅射功率制备的铟镓氧化锌(IGZO)薄膜作为薄膜晶体管(TFT)的有源层,通过扫描电镜、霍尔效应测试仪,分析了溅射功率对IGZO薄膜形貌及电特性的影响,研究了不同IGZO溅射功率对IGZO-TFT栅偏压不稳定性的影响。结果表明,在一定范围内,低溅射功率使得IGZO薄膜的表面粗糙,缺陷较多,载流子浓度较低;在正栅极偏压作用下,低IGZO薄膜溅射功率导致较大的IGZO-TFT阈值电压漂移;在负偏压作用下不产生阈值电压漂移。     

射频磁控溅射低温制备非晶铟镓锌氧薄膜晶体管

利用射频磁控溅射技术室温制备了铟镓锌氧(IGZO)薄膜,采用X射线衍射(XRD)表征薄膜的晶体结构,原子力显微镜(AFM)观察其表面形貌,分光光度计测量其透光率。结果表明:室温制备的IGZO薄膜为非晶态且薄膜表面均匀平整,可见光透射率大于80%。将室温制备的IGZO薄膜作为有源层,在低温(<200℃)条件下成功地制备了铟镓锌氧薄膜晶体管(a-IGZO TFT),获得的a-IGZO-TFT器件的场效应迁移率大于6.0 cm2.V-1.s-1,开关比约为107,阈值电压为1.2 V,亚阈值摆幅(S)约为0.9 V/dec,偏压应力测试a-IGZO TFT阈值电压随时间向右漂移。     

铜-钼源漏电极对非晶氧化铟镓锌薄膜晶体管性能的改善

在铜(Cu)和非晶铟镓锌氧化物(a-IGZO)之间插入30 nm厚的钼(Mo)接触层, 制备了具有Cu-Mo源漏电极的a-IGZO薄膜晶体管(TFT). Mo接触层不仅能够抑制Cu与a-IGZO有源层之间的扩散, 而且提高了Cu电极与玻璃基底以及栅极绝缘层的结合强度. 制备的Cu-Mo结构TFT与纯Cu 结构TFT相比, 具有较高的迁移率(～9.26 cm²·V^-1·s^-1)、更短的电流传输长度(～0.2 μm)、更低的接触电阻(～1072 Ω)和有效接触电阻率(～1×10^-4Ω·cm²), 能够满足TFT 阵列高导互联的要求.     

溶胶凝胶法制备以HfO2为绝缘层和ZITO为有源层的高迁移率薄膜晶体管

采用溶胶凝胶法制备了h-k氧化铪HfO₂薄膜, 经500℃退火后, 获得了高透过率、表面光滑、低漏电流和相对高介电常数的HfO₂薄膜. 并采用氧化铪作为绝缘层和锌铟锡氧化物作为有源层成功地制备了底栅顶接触结构薄膜晶体管器件. 获得的薄膜晶体管器件的饱和迁移率大于100 cm²·V^-1·s^-1, 阈值电压为-0.5 V, 开关比为5×10⁶, 亚阈值摆幅为105 mV/decade. 表明采用溶胶凝胶制备的薄膜晶体管具备高的迁移率, 其迁移率接近低温多晶硅薄膜晶体管的迁移率.     

旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用

采用旋涂法制备了氧化锆介质层薄膜,重点讨论了退火温度以及旋涂转速对薄膜性能的影响及作用机制。研究发现高温后退火一方面使得氧化锆水合物脱水形成氧化锆,另一方面促使氧化锆薄膜结晶。此外,转速较高时,其变化对薄膜厚度及粗糙度无显著影响。当转速为5 000 r/min、退火温度为300℃时,制备的绝缘层厚度具有良好的厚度均匀性,粗糙度为0.7 nm,漏电流为3.13×10^-5 A/cm²（电场强度1 MV/cm）。最终,利用ZrO₂薄膜作为栅极绝缘层,在玻璃基板上制备了铟镓锌氧化物-薄膜晶体管（IGZO-TFT）,其迁移率为6.5 cm²/（V·s）,开关比为2×10⁴。     

氧化锌锡薄膜晶体管的研究

在ITO玻璃基底上用射频磁控溅射技术生长氧化锌锡(ZnSnO)沟道有源层、用PECVD生长SiO₂薄膜作为薄膜晶体管的栅绝缘层研制了薄膜晶体管(TFT), 器件的场效应迁移率最高达到μ_n=9.1 cm²/(V ·s),阈值电压-2 V,电流开关比为10⁴. 关键词： 氧化锌锡 薄膜晶体管 场效应迁移率     

低温透明非晶IGZO薄膜晶体管的光照稳定性

采用室温射频磁控溅射非晶铟镓锌氧化合物(a-IGZO), 在相对低的温度(<200 ℃)下成功制备底栅a-IGZO 薄膜晶体管器件, 其场效应迁移率10 cm^-2·V^-1·s^-1, 开关比大于10⁷, 亚阈值摆幅 SS为0.4 V/dec, 阈值电压为3.6 V. 栅电压正向和负向扫描未发现电滞现象. 白光发光二极管光照对器件的输出特性基本没有影响, 表明制备的器件可用于透明显示器件. 研究了器件的光照稳定性, 光照10000 s后器件阈值电压负向偏移约0.8 V, 这种漂移是由于界面电荷束缚所致. 关键词： 非晶铟镓锌氧化合物 薄膜晶体管 光照稳定性 电滞现象     

钝化层对背沟道刻蚀型IGZO薄膜晶体管的影响

本文制备了氧化硅、聚酰亚胺以及氧化硅-聚酰亚胺堆叠结构钝化层的非晶铟镓锌氧背沟道刻蚀型薄膜晶体管.与传统氧化硅钝化层薄膜晶体管相比,聚酰亚胺钝化层薄膜晶体管的电学特性大幅提高,场效应迁移率从4.7提升至22.4 cm²/(V·s),亚阈值摆幅从1.6降低至0.28 V/decade,电流开关比从1.1×10⁷提升至1.5×10¹⁰,负偏压光照稳定性下的阈值电压偏移从–4.8 V下降至–0.7 V.电学特性的改善可能是由于氢向聚酰亚胺钝化层扩散减少了背沟道的浅能级缺陷.     

SiOx interlayer to enhance the performance of InGaZnO-TFT with AlOx gate insulator

We have fabricated indium–gallium–zinc (IGZO) thin film transistor (TFT) using SiO_x interlayer modified aluminum oxide (AlO_x) film as the gate insulator and investigated their electrical characteristics and bias voltage stress. Compared with IGZO-TFT with AlO_x insulator, IGZO-TFT with AlO_x/SiO_x insulator shows superior performance and better bias stability. The saturation mobility increases from 5.6 cm²/V s to 7.8 cm²/V s, the threshold voltage downshifts from 9.5 V to 3.3 V, and the contact resistance reduces from 132 Ωcm to 91 Ωcm. The performance improvement is attributed to the following reasons: (1) the introduction of SiO_x interlayer improves the insulator surface properties and leads to the high quality IGZO film and low trap density of IGZO/insulator interface. (2) The better interface between the channel and S/D electrodes is favorable to reduce the contact resistance of IGZO-TFT.     

Solution processed amorphous InGaZnO semiconductor thin films and transistors

Amorphous indium gallium zinc oxide (a-IGZO) semiconductor thin films and transistors were deposited on alkali-free glasses by the sol–gel route. The atomic ratio of In:Ga:Zn in the solution was 0.7:0.3:1. In this study, the effects of annealing temperature on the structural, surface condition, optical transmittance, and electrical resistivity of a-IGZO semiconductor thin films were investigated. GIXRD measurements and TEM-NBD analysis indicated that all annealed IGZO thin films had an amorphous phase structure. The dried IGZO sol–gel films annealed at a temperature higher than 425 °C had a flat surface and exhibited high transparency (>89%) in the visible region. According to results from TGA, FT-IR and XPS, the residual organic compounds in the dried IGZO sol–gel films were completely removed at the annealing temperatures higher than 450 °C. Therefore, we chose the 450 °C annealed thin film as the active channel layer in the bottom-gate, bottom-contact (BGBC) thin-film transistor (TFT) in the present study. Current–voltage (I–V) characteristics of the 450 °C annealed a-IGZO TFT revealed that it operated in n-type behavior with a positive threshold voltage (enhancement mode).     

Extraction of density-of-states in amorphous InGaZnO thin-film transistors from temperature stress studies

The instability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with different active layer thicknesses under temperature stress has been investigated through using the density-of-states (DOS). Interestingly, the a-IGZO TFT with 22 nm active layer thickness showed a better stability than the others, which was observed from the decrease of interfacial and semiconductor bulk trap densities. The DOS was calculated based on the experimentally-obtained activation energy (E_A), which can explain the experimental observations. We developed the high-performance Al₂O₃ TFT with 22 nm IGZO channel layer (a high mobility of 7.4 cm²/V, a small threshold voltage of 2.8 V, a high I_on/I_off 1.8 × 10⁷, and a small SS of 0.16 V/dec), which can be used as driving devices in the next-generation flat panel displays.     

Reversible multi polyelectrolyte layers on gold nanoparticles

The fabrication of semiconducting functional layers using low-temperature processes is of high interest for flexible printable electronics applications. Here, the one-step deposition of semiconducting nanoparticles from the gas phase for an active layer within a thin-film transistor is described. Layers of semiconducting nanoparticles with a particle size between 10 and 25?nm were prepared by the use of a simple aerosol deposition system, excluding potentially unwanted technological procedures like substrate heating or the use of solvents. The nanoparticles were deposited directly onto standard thin-film transistor test devices, using thermally grown silicon oxide as gate dielectric. Proof-of-principle experiments were done deploying two different wide-band gap semiconducting oxides, tin oxide, SnO _x , and indium oxide, In₂O₃. The tin oxide spots prepared from the gas phase were too conducting to be used as channel material in thin-film transistors, most probably due to a high concentration of oxygen defects. Using indium oxide nanoparticles, thin-film transistor devices with significant field effect were obtained. Even though the electron mobility of the investigated devices was only in the range of 10^?6?cm^2?V^?1?s^?1, the operability of this method for the fabrication of transistors was demonstrated. With respect to the possibilities to control the particle size and layer morphology in situ during deposition, improvements are expected.     

同步对称双栅InGaZnO薄膜晶体管电势模型研究

研究了同步对称双栅氧化铟镓锌薄膜晶体管(InGaZnO thin film transistors,IGZO TFTs)的沟道电势,利用表面电势边界方程联合Lambert函数推导得到了器件沟道电势的解析模型.该模型考虑了IGZO薄膜中存在深能态及带尾态等缺陷态密度,能够同时精确地描述器件在亚阈区(sub-threshold)与开启区(above threshold)的电势分布.基于所提出的双栅IGZO TFT模型,讨论了不同厚度的栅介质层和有源层时,栅-源电压对双栅IGZO TFT的表面势以及中心势的调制效应.对比分析了该模型的计算值与数值模拟值,结果表明二者具有较高的符合程度.     

用反应溅射法沉积SiO_x绝缘层的InGaZnO-TFT的光照稳定性(英文)

制备了基于反应溅射SiOx绝缘层的InGaZnO-TFT,并系统地研究了InGaZnO-TFT在白光照射下的稳定性,主要涉及到光照、负偏压、正偏压、光照负偏压和光照正偏压5种情况。结果表明,器件在光照和负偏压光照下的阈值偏移较大,而在正偏压光照情况下的阈值偏移几乎可以忽略。采用C-V方法证明阈值电压漂移是源于绝缘层/有源层附近及界面处的缺陷。另外,采用指数模式计算了缺陷态的弛豫时间。本研究的目的就是揭示InGaZnO-TFT在白光照射和偏压下的不稳定的原因。     

面向IGZO-TFT-AMOLED像素电路设计的V_(TH)检测方法研究

由于迁移率高、均匀性好、制备成本低等优势,铟镓锌氧化物薄膜晶体管(IGZO TFT)有望促成有源矩阵有机发光显示器件(AMOLED)的大规模量产。但是IGZO TFT存在阈值电压(VTH)漂移的问题,实用的AMOLED像素电路必须对VTH漂移进行补偿以实现较好的显示效果,而VTH的检测是AMOLED像素电路设计中的关键环节。本文系统研究了VTH检测方法,比较了放电法、充电法、偏置电流法补偿VTH的效果,研究了VTH检测时间和TFT寄生电容等参数的影响。研究结果表明:放电法不能精确地补偿负VTH漂移,充电法需要的VTH检测时间最长,偏置电流法能够达到的补偿精度最高。