第一性原理研究硫化镉高压相变及其电子结构与弹性性质

采用第一性原理研究了CdS的六方纤锌矿(WZ), 立方闪锌矿(ZB) 和岩盐矿(RS)相在高压条件下的相稳定性、 相变点、电子结构以及弹性性能.WZ相与RS 相可以在相应的压强范围内稳定存在, 而ZB相不能稳定存在.压强大于2.18 GPa时, WZ相向RS相发生金属化相变.WZ相中S原子电负性大于Cd, 且电负性差值小于1.7, CdS的WZ相为共价晶体.高压作用下, S原子半径被强烈压缩, 有效核电荷增加, 对层外电子吸引能力提高, 电负性急剧增大, 导致S与Cd的电负性差值大于1.7, CdS的RS相以离子晶体存在. WZ相的C₄₄随压强增加呈下降趋势, 导致WZ相力学不稳定, 并向RS相转变.当压强大于2.18 GPa时, RS相C₁₁, C₁₂随压强增加而增大, 并且C₄₄保持稳定, 说明RS相具有良好的高压稳定性与力学性能. 关键词： 第一性原理 相变 电子结构 弹性性质     

ZnSe相变、电子结构的第一性原理计算

基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对闪锌矿结构(ZB)和岩盐结构(RS)的ZnSe在0—20GPa高压下的几何结构、态密度、能带结构进行了计算研究,分析了闪锌矿结构ZnSe和岩盐结构ZnSe的几何结构.在此基础上,研究了ZnSe的结构相变、弹性常数、成键情况以及相变压强下电子结构的变化机理.结果发现:通过焓相等原理得到的ZB相到RS相的相变压强为15.3GPa,而由弹性常数判据得到的相变压强为11.52GPa,但在9.5GPa左右并没有发现简单立方相的出现;在结构相变过程中,sp3轨道杂化现象并未消除,Zn原子的4s电子在RS相ZnSe的导电性中起主要贡献.     

GaN结构相变、电子结构和光学性质

运用第一性原理平面波赝势和广义梯度近似方法,对纤锌矿结构和氯化钠结构GaN的状态方程及其在高压下的相变进行计算研究,分析相变点附近的电子态密度、能带结构和光学性质的变化机制.通过状态方程和焓相等原理得到GaN从纤锌矿到氯化钠结构的相变压强分别为43.9 Gpa和46.0 Gpa;在相变的过程中,GaN由典型的直接带隙半导体转变为间接带隙半导体材料;氯化钠结构GaN相比于纤锌矿结构,介电函数主峰值增强,本征吸收边明显往高能方向移动,氯化钠结构GaN在低能区域的光学性质差于纤锌矿结构.     

ZnTe结构相变、电子结构和光学性质的研究

运用密度泛函理论体系下的投影缀加波方法, 对闪锌矿和朱砂相结构的ZnTe在高压下的状态方程和结构相变进行了研究, 并分析了相变前后的原胞体积、电子结构和光学性质. 结果表明: 闪锌矿结构转变为朱砂相结构的相变压力为8.6 GPa, 并没有出现类似材料高压导致的金属化现象, 而是表现出间接带隙半导体特性. 相变后, 朱砂相结构Zn和Te原子态密度分布均向低能级方向移动, 带隙变小; 轨道杂化增强, 更有利于Te 5p与Zn 3d间的电子跃迁, 介电常数虚部主峰明显增强, 但宏观介电常数不受压力的影响.     

ZnSe高压相变和声子谱的第一性原理研究

采用基于第一性原理的平面波赝势和广义梯度近似方法,对闪锌矿(ZB)、纤锌矿(WZ)和岩盐(RS)结构的ZnSe在0~40GPa压力下的热力学性质及相变特性进行了研究。通过数值计算得出3种结构ZnSe的能量随体积变化的曲线,在此基础上,研究了不同结构ZnSe的晶格常数、高温高压物态方程、结构相变及弹性性质,解释了高压下结构相变的机理,并通过焓相等原理得到ZB结构到RS结构的相变压力为14.95GPa。最后,利用VASP软件结合Phonopy计算了ZB结构和RS结构ZnSe的声子谱,并将温度效应引入,得到亥姆霍兹自由能、熵和等容热容随温度的变化关系。     

Ga掺杂ZnS的电子结构和光学性质简

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对ZnS闪锌矿结构掺入杂质Ga体系进行结构优化处理.计算了该体系下ZnS材料的电子结构和光学性质.详细分析了其平衡晶格常数、能带结构、电子态密度分布和光学性质.结果表明:由于杂质Ga的引入,ZnS体系体积略有膨胀,并在费米面附近出现了深施主能级,单纯的通过Ga掺杂来实现低阻n型ZnS材料较为困难;由于杂质能级的引入,整个介电峰向低能方向偏移,电子在可见光区的跃迁显著增强.     

Ga掺杂ZnS的电子结构和光学性质

本文基于第一性原理平面波赝势（PWP）和广义梯度近似（GGA）方法,对ZnS闪锌矿结构掺入杂质Ga体系进行结构优化处理. 计算了该体系下ZnS材料的电子结构和光学性质. 详细分析了其平衡晶格常数、能带结构、电子态密度分布和光学性质．结果表明：由于杂质Ga的引入,ZnS体系体积略有膨胀,并在在费米面附近出现了深施主能级,单纯的通过Ga掺杂来实现低阻ｎ型ZnS材料较为困难;由于杂质能级的引入,整个介电峰向低能方向偏移,电子在可见光区的跃迁显著增强．     

压力对有机半导体均苯四甲酸晶体结构转变和电子性质的影响

研究高压条件下均苯四甲酸(C₁₀H₆O₈)材料的结构和性质对探索有机半导体材料的应用有积极意义.基于密度泛函理论的第一性原理赝势平面波方法,开展了0-300 GPa压强下C₁₀H₆O₈晶体的结构、电子和光学性质的研究.晶格常数在压强20 GPa和150 GPa下出现了明显跳变,且原子之间随着压强变化反复地出现成键/断键现象,表明压强可诱导晶体结构变化.电子结构的性质表明,0 GPa的C₁₀H₆O₈晶体是带隙为3.1 eV的直接带隙半导体,而压强增加到150 GPa时,带隙突变为0 eV,表明了晶体由半导体转变为导体.当压强为160 GPa时,晶体又变成了能隙约为1eV的间接带隙半导体,这可能是费米能级附近仅受O-2p轨道电子影响所导致.通过对C₁₀H₆O₈晶体介电函数的分析,再次验证了晶体在150 GPa时发生了结构相变.同时...     

ZnS掺Ag与Zn空位缺陷的电子结构和光学性质

本文基于第一性原理平面波赝势(PWP)和广义梯度近似(GGA)方法,对ZnS闪锌矿结构本体、掺入p型杂质Ag和Zn空位超晶胞进行结构优化处理. 计算了三种体系下ZnS材料的电子结构和光学性质,并从理论上给出了p型ZnS难以形成的原因. 详细分析了其平衡晶格常数、能带结构、电子态密度分布和光学性质.结果表明:在Ag掺杂与Zn空位ZnS体系中,由于缺陷能级的引入,禁带宽度有所减小,在可见光区电子跃迁明显增强. 关键词： 硫化锌 缺陷 电子结构 光学性质     

Heusler合金Mn2 NiAl的电子结构和磁性对四方畸变的响应及其压力响应

运用基于密度泛函理论的第一性原理的投影缀加波方法,对Hg₂CuTi型Mn₂NiAl在由立方结构至四方结构的畸变过程中电子结构和磁性的变化规律及其对压力响应的规律进行了研究.研究发现:在由奥氏体相到马氏体相的相变中,由于Ni-Mn(A)原子间距的减小而使得杂化程度增强,导致占据态的态密度向低能区域移动,体系的能量降低,致使在马氏体相中的稳定性增大;在从奥氏体相到马氏体相的相变中,能带变宽,成键作用加强,从而在马氏体相中的稳定性增大;在四方畸变过程中,总磁矩的变化主要来源于Ni原子磁矩的变化;计算得到Mn₂NiAl的零压体积弹性模量为125.69 GPa,其抗压缩性比其他常见的Heusler型合金弱. 关键词： 第一性原理 电子结构 磁性 四方畸变     

Electronic and optical properties of BAs under pressure

The electronic and optical properties of boron arsenide (BAs) in the zinc-blende (ZB) and rock-salt (RS) phases have been studied by the density functional theory (DFT) method based on the generalized gradient approximation (GGA). Using the enthalpy-pressure data, the structural phase transition from ZB to RS is observed at 141 GPa. Our calculated electronic properties show that ZB-BAs is a semiconductor, whereas RS-BAs is a semi-metal. Calculations of the dielectric function and absorption coefficient have been performed for the energy range 0-30 eV. The dependence of pressure on band structure and optical spectra is also investigated. The results are compared with available theoretical and experimental data.     

Pressure induced phase transition in ZnS

The phase transition of ZnS from the zincblende (ZB) structure to the rocksalt (RS) structure is investigated by the ab initio plane-wave pseudopotential density functional theory method. It is found that the pressures for transition from the ZB structure to the RS structure are 17.5 GPa from total energy-volume data and 15.4 GPa from equal enthalpies, consistent with the experimental data. From the high pressure elastic constants obtained, we find that the ZB structure ZnS is unstable when the applied pressure is larger than 17 GPa. Moreover, the dependence of the normalized primitive cell volume V/V₀ on pressure P can also be successfully obtained.     

Pressure-induced phase transition in wurtzite ZnS: An ab initio constant pressure study

We study the pressure-induced phase transition of wurtzite ZnS using a constant pressure ab initio technique. A first-order phase transition into a rocksalt state at 30–35 GPa is observed in the constant pressure simulation. We also investigate the stability of wurtzite (WZ) and zinc-blende (ZB) phases from energy–volume calculations and Gibbs free energies at zero temperature and find that both structures show nearly similar equations of state and transform into a rocksalt structure around 14 GPa, in agreement with experiments. Additionally, we examine the influence of pressure on the electronic structure of the wurtzite and zinc-blende ZnS crystals and find that their band gap energies exhibit similar tendency and increase with increasing pressure. The calculated pressure coefficients and deformation potential are found to be comparable with experiments.     

Structural transition behavior of ZnS nanotetrapods under high pressure

ZnS nanotetrapods synthesized via a solvothermal route have a octahedral core with a zincblende (ZB) structure and four hexprism-shaped arms consisting of alternately stacking ZB and wurtzite (WZ) phases, where the WZ phase has a higher volume percentage. In situ angular-dispersive X-ray diffraction (ADXRD) measurements were carried out to study the structural behavior of ZnS nanotetrapods under high pressure up to 41.3?GPa. The initial WZ structure exhibits a very high mechanical stability to ～11.3?GPa. Both the WZ and ZB structures transform to the rocksalt (RS) structure at ～15.4?GPa. The bulk moduli of the WZ (148.2?±?8.9?GPa) and RS (165.6?±?9.9?GPa) phases are both larger than the previously reported values. These phenomena are discussed based on the alternating epitaxial growth of the WZ and ZB phases in the arms of nanotetrapods. Our study suggests that the internal structure of nanomaterials could also greatly affect their stability and transition behavior.     

First-principles study of zinc-blende to rocksalt phase transition in BN

The structural, electronic and elastic properties of the cubic boron nitride (BN) compound are investigated by a first-principle pseudopotential method. The calculations show that the structural phase transition from the zinc-blende(ZB) structure to the rocksalt (RS) structure occurs at a transition pressure of 1088 GPa and with a volume reduction of 3.1%. Both the ZB and RS structures of BN have indirect gaps, with energy gaps of 4.80 eV and 2.11 eV, respectively. The positive pressure derivative of the indirect band gap (Γ-X) energy for the the ZB phase and the predicted ultrahigh metallization pressure are attributed to the absence of d occupations in the valence bands. The increase of the shear modulus with increasing pressure implies that the lattice stability becomes higher when BN is compressed.     

Structural, thermodynamic and electronic properties of zinc-blende AlN from first-principles calculations

Structural, thermodynamic and electronic properties of zinc-blende AlN under pressure are investigated by first-principles calculations based on the plane-wave basis set. Through the analysis of enthalpy variation of AlN in the zinc-blende (ZB) and the rock-salt (RS) structures with pressure, we find the phase transition of AlN from ZB to RS structure occurs at 6.7 GPa. By using the quasi-harmonic Debye model, we obtain the heat capacity C_V, Debye temperature Θ_D, Grüneisen parameter γ and thermal expansion coefficient α. The electronic properties including fundamental energy gaps and hydrostatic deformation potentials are investigated and the dependence of energy gaps on pressure is analysed.     

Structural phase transformation in ZnS nanocrystalline thin films by swift heavy ion irradiation

Zinc sulfide (ZnS) thin films in zinc-blende (ZB) and wurtzite (W) phases have been fabricated by pulsed laser deposition. 150 MeV Ni ion beam irradiation has been carried out at different fluences ranging from 10¹¹ to 10¹³ ions/cm² at room temperature for ion induced modifications. Structural phase transformation in ZnS from W to ZB phase is observed after high energy ion irradiation which leads to the decrease in bandgap. Generation of high pressure and temperature by thermal spike during MeV ion irradiation along the ion trajectory in the films is responsible for the structural phase transformation.     

First-principles predictions on transition from tetrahedron to octahedron,electronic structures and elastic properties of InAs

In this work, the pressure induced phase transition of InAs is investigated by density functional theory. The first-order phase transition of InAs from zinc-blende (ZB) to the rocksalt (RS) structure occurs at 4.9 GPa accompanies by a 26% volume collapse. It is found that the nearest In and As atoms bonded as covalent bond, but there is no strong interaction between the nearest In–In or As–As atoms. Crystal space of ZB structure is occupied by tetrahedrons (4 In–As covalent bonds) partly with many interstice, and crystal space of RS is fulfilled by close-packed octahedrons (6 In–As covalent bonds). With increasing pressure, rebuild of covalent bond due to variations of electronic structure causes phase transition from ZB to RS structure. Furthermore, directional changes of covalent bond along [100] and [110] bring evident variation of shear on the {100} and {110} planes.