Current fluctuations in polystyrene nano-compounds

The current fluctuations in a polystyrene matrix (PS) doped by gold nanoparticles (Au-NPs) and small conjugated molecules of 8-hydroxyquinoline (8HQ) have been characterized. The electrical properties of the PS composite allow using it as a responsive layer in non-volatile memory devices due to its switching capability between two well separated conducting states. The analysis of current fluctuations at fixed bias voltages showed the presence of two states in charge carrier transport regardless of the operating conducting state of the device. Moreover, noise spectra have been investigated in the low frequency region, allowing the estimation of charge relaxation times between current levels in the two memory states. The presence of these slow and large fluctuations can seriously affect the final electrical performances of this class of nanostructured memories.     

Lifetime of the superconductive state in short and long Josephson junctions

We study the transient statistical properties of short and long Josephson junctions under the influence of thermal and correlated fluctuations. In particular, we investigate the lifetime of the superconductive metastable state finding the presence of noise induced phenomena. For short Josephson junctions we investigate the lifetime as a function both of the frequency of the current driving signal and the noise intensity and we find how these noise-induced effects are modified by the presence of a correlated noise source. For long Josephson junctions we integrate numerically the sine-Gordon equation calculating the lifetime as a function of the length of the junction both for inhomogeneous and homogeneous bias current distributions. We obtain a non-monotonic behavior of the lifetime as a function of the frequency of the current driving signal and the correlation time of the noise. Moreover we find two maxima in the non-monotonic behaviour of the mean escape time as a function of the correlated noise intensity.     

Velocity distributions and density fluctuations in a granular gas

Velocity distributions in a vibrated granular monolayer are investigated experimentally. Non-Gaussian velocity distributions are observed at low vibration amplitudes but cross over smoothly to Gaussian distributions as the amplitude is increased. Cross-correlations between fluctuations in density and temperature are present only when the velocity distributions are strongly non-Gaussian. Confining the expansion of the granular layer results in non-Gaussian velocity distributions that persist to high vibration amplitudes.     

Gain and transient photoresponse of quantum well infrared photodetectors: a detailed ensemble Monte Carlo study

We investigate different gain characteristics observed on quantum well infrared photodetectors (QWIPs) fabricated with various material systems, and the effects of barrier material properties on the device characteristics through detailed ensemble Monte Carlo simulations. When the energy spacing between the central and satellite valleys is increased, the improvement in the excited electron lifetime is found to be much stronger than that in the average electron velocity in the device. According to our results, relatively high gain observed in InP/In_0.53Ga_0.47As QWIPs under large bias is not due to the higher mobility in InP as suggested earlier; it can mainly be attributed to higher excited electron lifetime as a result of relatively large Γ–L energy spacing. We discuss the details of the fast part of the Al_0.3Ga_0.7As/GaAs QWIP transient photoresponse, which exhibits three regions with different decay characteristics under a short pulse of radiation. The duration of the final region, during which the electrons excited near the emitter are extracted from the collector, is observed to be considerably long due to the dispersion of the photoelectrons. The photoresponse time rapidly decreases with increasing bias under low bias, and nearly saturates at 10 ps under large bias being 40% larger than the average transit time estimated by dividing the device length to the average steady-state electron velocity in device. We also investigate the effects of the interface reflections on the photoresponse time.     

Full current statistics in diffusive normal-superconductor structures

We study the current statistics in normal diffusive conductors in contact with a superconductor. Using an extension of the Keldysh Green's function method we are able to find the full distribution of charge transfers for all temperatures and voltages. For the non-Gaussian regime, we show that the equilibrium current fluctuations are enhanced by the presence of the superconductor. We predict an enhancement of the nonequilibrium current noise for temperatures below and voltages of the order of the Thouless energy E(Th) = D/L(2). Our calculation fully accounts for the proximity effect in the normal metal and agrees with experimental data.     

Effects of non-Gaussian noise on a calcium oscillation system

We investigate the effects of the non-Gaussian colored noise on a calcium oscillation system using stochastic simulation methods. It is found that the reciprocal coefficient of variance R has a maximum (R max ) with increasing noise intensity Q. The non-Gaussian noise parameter q has an important effect on the system. For some values of q (e.g., q = 0.9, q = 1.0), R has a maximum with increasing correlation time τ. Non-Gaussian noise induced spikes are more regular than Gaussian noise induced spikes when q is small and Q has large values. The R has a maximum with increasing q. Therefore, non-Gaussian noise could play more effective roles in the calcium oscillation system.     

Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration

The main problems of conventional multi-quantum well infrared photodetectors (QWIPs) were discussed. In order to overcome the limitations of the conventional QWIPs, such as small photocurrent, high dark current and low response speed, novel QWIPs in which photocurrent increases with the number of well were proposed. The novel structure with several wells were calculated and analyzed in detail, and successfully fabricated. The dark current lower than conventional QWIPs by about one order of magnitude was obtained, well in agreement with theoretical value. I–V characteristics of the novel QWIPs with six wells has been presented, and six related negative differential resistance regions were observed at positive bias. The absorption photocurrents of the novel QWIPs at 77 K were found to increase with well numbers, confirming the mechanism of the new structure. Furthermore, the transportation of the optoelectronic and some other problems of the QWIPs were discussed.     

Influence of non-Gaussian noise on a tumor growth system under immune surveillance

In this paper, the stationary probability distribution (SPD) function and the mean first passage time (MFPT) are investigated in a tumor growth model driven by non-Gaussian noise which is introduced to mimic random fluctuations in the levels of the immune system. Results demonstrate the different transitions induced by the strength of non-Gaussian noise under different immune coefficients and the dual roles of non-Gaussian noise in promoting host protection against cancer and in facilitating tumor escape from immune destruction. Additionally, it can be discovered that increases in noise strength, the degree of departure from Gaussian noise, and the immune coefficient can accelerate the extinction of tumor cells. Numerical simulations are performed, and their results present good agreement with the theoretical results.     

Arguments for p-type Si 1 − xGe x/Si quantum well photodetectors for the far- and very-far (terahertz)-infrared

An analysis, by a carrier scattering approach, of the thermionic emission contribution to the dark current is carried out in conventional bound-to-continuum quantum well infrared photodetectors (QWIPs). It is found that the thermionic emission increases with increasing temperature or when extending the detection wavelength from mid- to far-infrared. Considering p-type instead of n-type material, however, the increased effective mass decreases the thermionic emission. Designs for mid- and far-infrared p-type QWIPs based on the Si _1 − xGe _x/Si system are discussed for both normal and non-normal incident geometries.     

QWIP detectors and thermal imagers

Standard GaAs/AlGaAs QWIPs (Quantum Well Infrared Photodetector) are now well established for long wave infrared (LWIR) detection. The main advantage of this technology is the duality with the technology of commercial GaAs devices. The realization of large FPAs (up to 640×480) drawing on the standard III–V technological process has already been demonstrated. The second advantage widely claimed for QWIPs is the so-called band-gap engineering, allowing the custom design of the quantum structure to fulfill the requirements of specific applications such as multispectral detection. QWIP technology has been growing up over the last ten years and now reaches an undeniable level of maturity. As with all quantum detectors, the thermal current, particularly in the LWIR range, limits the operating temperature of QWIPs. It is very crucial to achieve an operating temperature as high as possible and at least above 77 K in order to reduce volume and power consumption and to improve the reliability of the detection module. This thermal current offset has three detrimental effects: noise increase, storage capacitor saturation and high sensitivity of FPAs to fluctuations in operating temperature. For LWIR FPAs, large cryocoolers are required, which means volume and power consumption unsuitable for handheld systems. The understanding of detection mechanisms has led us to design and realize high performance ‘standard’ QWIPs working near 77 K. Furthermore, a new in situ skimmed architecture accommodating this offset has already been demonstrated. In this paper we summarize the contribution of THALES Research & Technology to this progress. We present the current status of QWIPs in France, including the latest performances achieved with both standard and skimmed architectures. We illustrate the potential of our QWIPs through features of Thales Optronique's products for third thermal imager generation. To cite this article: E. Costard et al., C. R. Physique 4 (2003).     

Experimental test of the fluctuation theorem for a driven two-level system with time-dependent rates

A single defect center in diamond periodically excited by a laser is shown to provide a simple realization for a system obeying a fluctuation theorem for nonthermal noise. The distribution of these fluctuations is distinctly non-Gaussian, which has also been verified by numerical calculation. For driving protocols symmetric under time reversal a more restricted form of the theorem holds, which is also known from entropy fluctuations caused by thermal noise.     

Electric field redistribution under IR radiation in quantum well infrared photodetectors as deduced from current noise measurements at low temperature and bias

Current noise has been investigated in AlGaAs/GaAs quantum well infrared photodetectors (QWIPs), having nominally the same design except the number of wells N. The experiments have been carried out in the dark and under infrared (IR) radiation in a wide range of currents and temperatures. We have found that the current noise scales as the inverse of the number of wells N in the dark condition. In the presence of IR radiation, the noise exhibits strong deviations from the simple 1/N behavior. These effects are still more evident when the photocurrent noise is measured at low biases and temperatures. Nonlinear effects in the QWIPs operation at high IR power, related to the potential redistribution in the interelectrodic region, are probably responsible for such anomalies. This conclusion is consistent with results of the steady-state responsivity obtained in the QWIPs in the same experimental conditions.     

Sound source localization in real sound fields based on empirical statistics of interaural parameters

The role of temporal fluctuations and systematic variations of interaural parameters in localization of sound sources in spatially distributed, nonstationary noise conditions was investigated. For this, Bayesian estimation was applied to interaural parameters calculated with physiologically plausible time and frequency resolution. Probability density functions (PDFs) of the interaural level differences (ILDs) and phase differences (IPDs) were estimated by measuring histograms for a directional sound source perturbed by several types of interfering noise at signal-to-noise ratios (SNRs) between -5 and +30 dB. A moment analysis of the PDFs reveals that the expected values shift and the standard deviations increase considerably with decreasing SNR, and that the PDFs have non-Gaussian shape at medium SNRs. A d' analysis of the PDFs indicates that elevation discrimination is possible even at low SNRs in the median plane by integrating information across frequency. Absolute sound localization was simulated by a Bayesian maximum a posteriori (MAP) procedure. The simulation is based on frequency integration of broadly tuned "detectors." Confusion patterns of real and estimated sound source directions are similar to those of human listeners. The results indicate that robust processing strategies are needed to exploit interaural parameters successfully in noise conditions due to their strong temporal fluctuations.     

An improved method and experimental results of noise used as reliability estimation for semiconductor lasers

The low-frequency noise is a sensitive non-destructive indicator of semiconductor devices reliability. In this paper, the noises in InGaAsP/InGaAs/GaAlAs double quantum well semiconductor laser diodes (LDs) are measured, and the correlation between the noise and device reliability is studied. The insults indicate that the noise level in the LDs operating in low bias current is very important for estimating device reliability. So when noise is used as reliability indicator, the noise levels in LDs operating in both low and higher bias current should be considered, which improves the validity of reliability estimation.     

Current-influenced voltage noise in bulk polycrystalline high-Tc superconductors

The 1/f voltage noise in bulk polycrystalline high-temperature superconductors (HTSC) under bias current and magnetic field has its origin in the noise current-dependence of the grain boundary junctions (GBJs), due in turn to the correlated effects of junction critical current and normal resistance fluctuations. The analogy between the results obtained by varying the bias current through the specimen and those performed with temperature as variable is evidenced. The noise maxima obtained in both sets of measurements turn out to be caused by the junction critical current fluctuations, which dominate when the currents flowing through the GBJs are close to the Josephson critical current. The anti-phase correlation between the normal resistance and the critical current fluctuations is responsible for the monotonical decrease of the noise at constant bias current, with the temperature exceeding the value corresponding to the noise maximum. In contrast, varying the bias current at fixed temperature, the voltage noise exhibits a local minimum followed by an increasing tendency after passing through the maximum.     

Fractionalization noise in edge channels of integer quantum Hall states

A theoretical calculation is presented of current noise which is due charge fractionalization, in two interacting edge channels in the integer quantum Hall state at filling factor ν=2. Because of the capacitive coupling between the channels, a tunneling event, in which an electron is transferred from a biased source lead to one of the two channels, generates propagating plasma mode excitations which carry fractional charges on the other edge channel. When these excitations impinge on a quantum point contact, they induce low-frequency current fluctuations with no net average current. A perturbative treatment in the weak tunneling regime yields analytical integral expressions for the noise as a function of the bias on the source. Asymptotic expressions of the noise in the limits of high and low bias are found.     

两端叠层结构的中长波量子阱红外探测器

采用分子束外延技术生长了两个叠层结构的双色量子阱红外探测器结构,并经过光刻和湿法刻蚀制作成两端结构的量子阱红外探测器单元器件. 通过改变量子阱势垒高度,势阱宽度,掺杂浓度,重复周期数等器件参数,可以使总电压在两个叠层之间产生适当的分布,从而使器件表现出不同的电压响应特点. 光电流谱测量显示,器件1随着外加偏置电压可实现对于中波大气红外窗口(3—5 μm)和长波大气红外窗口(8—12 μm)红外响应的切换,器件2在不同的偏置电压下可以对这两个波段同时做出响应. 本文探讨了两端叠层结构量子阱红外探测器的工作原 关键词： 电压调制 同时响应 量子阱红外探测器 双波段     

Intermittent Structures in the High Field Side Boundary of the HYBTOK-II Tokamak

The spatial and temporal characteristics of the turbulence in the inboard and outboard scrape-off layer (SOL) of tokamak HYBTOK-II have been studied using poloidal probe array. Bursty behaviour with intermittent bursts was observed for both outboard and inboard SOL. In the inboard (high field side), high level of density fluctuations has been observed. The fluctuations in the high field side and low field side are identical in statistics that is non-Gaussian one.     

Brownian motors: Joint effect of non-Gaussian noise and time asymmetric forcing

Previous works have shown that time asymmetric forcing on the one hand, as well as non-Gaussian noises on the other, can separately enhance the efficiency and current of a Brownian motor. Here, we study the result of subjecting a Brownian motor to both effects simultaneously. Our results have been compared with those obtained for the Gaussian white noise regime in the adiabatic limit. We find that, although the inclusion of the time asymmetry parameter increases the efficiency value up to a certain extent, for the present case this increase is much less appreciable than in the white noise case. We also present a comparative study of the transport coherence in the context of colored noise. Though the efficiency in some cases becomes higher for the non-Gaussian case, the Péclet number is always higher in the Gaussian colored noise case than in the white noise as well as non-Gaussian colored noise cases.     

Characteristics of p-ZnO/n-GaN heterojunction photodetector

Thin film heterojuction of the type p-ZnO/n-GaN was prepared by spray pyrolysis and electron beam evaporation technique, respectively. Hall measurements demonstrate the firm p-type conductivity of the p-doped ZnO film. The structural and electrical properties of the p-ZnO/n-GaN heterojunction are investigated by X-ray diffraction (XRD) and current-voltage (I-V) measurements. The XRD shows that the p-ZnO/n-GaN heterojunction is highly crystalline in nature with preferred orientation along the [0001] direction. The current-voltage curve of the heterojunction demonstrates obvious rectifying diode behavior in the dark and under illumination conditions. The ideality factor of the detector was determined in case of forward bias at low voltages and it was found to be 13.35. The turn-on voltage appears at about 1V under forward-biased voltage, and the reverse breakdown voltage is about 4V. It was found that the current of the illumination increases with the increase of bias voltages.