A sharp thermally reversing window in As45Te55−xIx chalcohalide glasses revealed by alternating differential scanning calorimetry and photo thermal deflection studies

The composition dependence of different thermal parameters such as glass transition temperature, non-reversing enthalpy, thermal diffusivity etc., of bulk As₄₅Te_55−xI_x chalcohalide glasses (3 ? x ? 10), has been evaluated using the temperature modulated Alternating Differential Scanning Calorimetry (ADSC) and Photo Thermal Deflection (PTD) studies. It is found that there is not much variation in the glass transition temperature of As₄₅Te_55−xI_x glasses, even though there is a wide variation in the average coordination number . This observation has been understood on the basis that the variation in glass transition temperature of network glasses is dictated by the variation in average bond energy rather than . Further, it is found that both the non-reversing enthalpy (ΔH_nr) and the thermal diffusivity (α) exhibit a sharp minimum at a composition x = 6. A broad hump is also seen in glass transition and crystallization temperatures in the composition range 5 ? x ? 7. The results obtained clearly indicate a sharp thermally reversing window in As₄₅Te_55−xI_x chalcohalide glasses around the composition x = 6.     

Signatures of an extended rigidity percolation in the photo-degradation behavior and the composition dependence of photo-response of Ge-Te-In glasses

Time dependent photocurrent measurements have been undertaken on bulk Ge₁₅Te_85−xIn_x (1 ? x ? 11) series of glasses. It is found that samples with x < 3 do not exhibit any photo-degradation whereas a decrease in photo-conductivity under illumination is observed in samples with x ? 3. Further, the photosensitivity of Ge₁₅Te_85−xIn_x glasses is found to reveal specific signatures at compositions x = 3 and 7. The observed composition dependent photo-degradation behavior and photo-response of these glasses have been understood on the basis of an extended rigidity percolation and its influence on network related properties.     

High field electrical switching behavior of Ge10Se90−xTlx glasses

Electrical switching studies on bulk Ge₁₀Se_90−xTl_x (15 ? x ? 34) glasses have been undertaken to examine the type of switching, composition and thickness dependence of switching voltages. Unlike Ge-Se-Tl thin films which exhibit memory switching, the bulk Ge₁₀Se_90−xTl_x glasses are found to exhibit threshold type switching with fluctuations seen in their current-voltage (I-V) characteristics. Further, it is observed that the switching voltages (V_T) of Ge₁₀Se_90−xTl_x glasses decrease with the increase in the Tl concentration. An effort has been made to understand the observed composition dependence on the basis of nature of bonding of Tl atoms and a decrease in the chemical disorder with composition. In addition, the network connectivity and metallicity factors also contribute for the observed decrease in the switching voltages of Ge₁₀Se_90−xTl_x glasses with Tl addition. It is also interesting to note that the composition dependence of switching voltages of Ge₁₀Se_90−xTl_x glasses exhibit a small cusp around the composition x = 22, which is understood on the basis of a thermally reversing window in this system in the composition range 22 ? x ? 30. The thickness dependence of switching voltages has been found to provide an insight about the type of switching mechanism involved in these samples.     

Thermal diffusivity measurements on As-Te-Ga glasses by photo-thermal deflection technique: Composition dependence and topological thresholds

The thermal diffusivity (α) of As₂₀Te_80−xGa_x glasses (7.5 ? x ? 18.5) has been measured using photo-thermal deflection (PTD) technique. It is found that the thermal diffusivity is comparatively lower for As₂₀Te_80−xGa_x glasses, which is consistent with the memory type of electrical switching exhibited by these samples. Further, the thermal diffusivity of As₂₀Te_80−xGa_x glasses is found to increase with the incorporation of gallium initially (for x ? 9), which is consistent with the metallicity of the additive. This increase in α results in a maximum at the composition x = 9; beyond x = 9, a decrease is seen in α leading to a minimum at the composition x = 15. The observed composition dependence of thermal diffusivity of As₂₀Te_80−xGa_x glasses has been found to be similar to that of Al₂₀As_xTe_100−x glasses, based on which it is proposed that As₂₀Te_80−xGa_x glasses exhibit an extended stiffness transition with compositions x = 9 and x = 15 being its onset and completion, respectively. Also, the composition x = 17.5 at which a second maximum is seen in the thermal diffusivity has been identified to be the chemical threshold (CT) of the As₂₀Te_80−xGa_x glassy system, as at CT, the glass is configurationally closest to the crystalline state and the scattering of the diffusing thermal waves is minimal for the chemically ordered phase.     

The presence of a thermally reversing window in Al-Te-Si glasses revealed by alternating differential scanning calorimetry and electrical switching studies

Alternating differential scanning calorimetric (ADSC) studies and electrical switching experiments have been undertaken on Al₁₅Te_85−xSi_x (2 ? x ? 12) system of glasses. These glasses are found to exhibit two crystallization reactions (T_c1 and T_c2), for compositions with x < 8. Above x = 8, a single-stage crystallization is seen. Further, a trough is seen in the composition dependence of non-reversing enthalpy (ΔH^NR), based on which it is proposed that there is a thermally reversing window in Al₁₅Te_85−xSi_x glasses, in the composition range 4 ? x ? 8. Electrical switching studies indicate that Al₁₅Te_85−xSi_x glasses exhibit a threshold type electrical switching at ON state currents less than 2 mA. Further, the switching voltages are found to increase with the increase in silicon content. It is interesting to note that the start (x = 4) and the end (x = 8) of the thermally reversing window are exemplified by a kink and a saturation in the composition dependence of switching voltages, respectively.     

Electrical switching studies on Ge-Te-Tl chalcogenide glasses: Effect of thallium on the composition dependence of switching voltages

Bulk Ge₁₇Te_83−xTl_x glasses (0 ≤ x ≤ 13), have been found to exhibit memory type electrical switching. The switching voltages (also known as threshold voltage — V_th) of Ge₁₇Te_83−xTl_x glasses are found to decrease with increasing thallium content. The rate of decrease of V_th is greater at lower concentrations and V_th falls at a slower rate for higher thallium concentrations (x ≥ 6).The addition of thallium to the Ge-Te network fragments the covalent network and introduces ionic nature to it; the reduction in network connectivity leads to the decrease in switching voltages with thallium content. The decrease in the glass transition temperatures of Ge₁₇Te_83−xTl_x glasses with increasing thallium concentration supports the idea of decrease in network connectivity with Tl addition. The more metallic nature of Tl also contributes to the observed reduction in the switching voltages of Ge₁₇Te_83−xTl_x glasses with Tl content.Further, there is an interesting correlation seen between the threshold voltage V_th and the average bond energy, as a function of Tl content. In addition, the switching voltages of Ge₁₇Te_83−xTl_x glasses have been found to decrease with sample thickness almost linearly. The set-reset studies indicate that the Ge₁₇Te₈₁Tl₂ sample can be switched for more than 10 cycles, whereas other glasses could not be reset beyond two switching cycles.     

Electronegativity difference, atomic size parameter and widths of supercooled liquid regions of Sb2S3-As2S3-Sb2Te3 glasses

Electronegativity difference Δ_x, atomic size parameter δ and width of supercooled liquid region (ΔT_x = T_x − T_g, where T_x is the onset crystallization temperature and T_g the glass transition temperature) are analysed for glasses of the ternary system Sb₂S₃-As₂S₃-Sb₂Te₃ as a function of arsenic atomic percentage.Correlation is investigated between the two bonds parameters (Δ_x and δ) and the width of supercooled liquid region ΔT_x (which is generally reliable in estimating the stability against the crystallization of the glasses). It is found that this width of supercooled liquid region of the glasses in Sb₂S₃-As₂S₃-Sb₂Te₃ system depends on electronegativity difference and atomic size parameter.     

Far-infrared transmission and bonding arrangement in Ge10Se90−xTex semiconducting glassy alloys

The far-infrared spectra of Ge₁₀Se_90−xTe_x where x = 0, 10, 20, 30, 40, 50 glassy alloys were measured in the wavenumber region 50-650 cm⁻¹ at room temperature. The results were explained in terms of the vibrations of the isolated molecular units. The addition of Te in Ge₁₀Se₉₀ has shown the appearance of GeTe₂ and GeTe₄ molecular units and vibrations of Se-Te bond as Se_8−xTe_x mixed rings. The assignment of various absorption bands has been made on the basis of absorption spectra of pure Se, binary Ge-Se, Ge-Te, Se-Te and ternary Ge-Se-Te glassy alloys. The far-infrared transmission spectrum has been found to shift a little towards lower wavenumber side with the addition of Te content to Ge₁₀Se₉₀. The addition of Te to Ge-Se system replacing Se has found to reduce the Se-Se bonds and Ge-Se bonds and leads to the formation of Se-Te, Ge-Te and Te-Te bonds.     

The composition dependence of electrical switching behavior of Ge7Se93−xSbx glasses

Bulk Ge₇Se_93?xSb_x (21 ? x ? 32) glasses are prepared by melt quenching method and electrical switching studies have been undertaken on these samples to elucidate the type of switching and the composition and thickness dependence of switching voltages. On the basis of the compressibility and atomic radii, it has been previously observed that Se-based glasses exhibit memory switching behavior. However, the present results indicate that Ge₇Se_93?xSb_x glasses exhibit threshold type electrical switching with high switching voltages. Further, these samples are found to show fluctuations in the current–voltage (I–V) characteristics. The observed threshold behavior of Ge₇Se_93?xSb_x glasses has been understood on the basis of larger atomic radii and lesser compressibilities of Sb and Ge. Further, the high switching voltages and fluctuations in the I–V characteristics of Ge–Se–Sb samples can be attributed to the high resistance of the samples and the difference in thermal conductivities of different structural units constituting the local structure of these glasses. The switching voltages of Ge₇Se_93?xSb_x glasses have been found to decrease with the increase in the Sb concentration. The observed composition dependence of switching voltages has been understood on the basis of higher metallicity of the Sb additive and also in the light of the Chemically Ordered Network (CON) model. Further, the thickness dependence of switching voltages has been studied to reassert the mechanism of switching.     

A new criterion for the glass-forming ability of liquids

Based on theoretical calculations using the fragility concept and the nucleation theory for a model glass-forming system, we propose a dimensionless criterion, ?, expressed by T_rg(ΔT_x/T_g)^a, with T_rg, the reduced glass-transition temperature, ΔT_x, the width of the supercooled liquid region when heating a glass, T_g, the glass transition temperature, and a, the exponent. The application of this simple criterion to various glasses, including network, metallic, and molecular glasses (except pure water), indicates an excellent correlation between the critical cooling rate R_c and ? in a Log R_c-? single master plot with a = 0.143.     

Thermal conductivity and specific heat of bulk amorphous chalcogenides Ge20Te80−xSex (x = 0,1,2,8)

Bulk amorphous chalcogenide samples of Ge₂₀Te_80−xSe_x (x = 0, 1, 2, 8) have been prepared using a melting-quench method, and characterized by the differential scanning calorimetry, X-ray powder diffraction, high-resolution transmission electron microscopy, specific heat and thermal conductivity measurements. The low temperature specific heat measurements identified some localized low-frequency oscillation modes (Einstein modes) in conjunction with a Debye-like behavior. It was found that with increasing Se concentration the characteristic Debye temperature did not change whereas the Einstein temperature slightly decreased. The lattice thermal conductivity of all Ge₂₀Te_80−xSe_x samples exhibited typical amorphous heat conduction behavior, which has been discussed in connection with the phonon mean free path and in the context of a phenomenological model of heat conduction for highly disordered system.     

Electrical conductivity studies on families of glasses of the GeSbSe system

Conductivity studies on two families of glasses of the GeSbSe system with the general formulas Ge_xSb₁₅Se₈₅?x and Ge_xSb₅Se₉₅?_x are reported. These results along with our earlier data on the Ge_xSb₁₀Se_90?x family of glasses confirm that the observed dependence of T_g, σ and ΔE on composition for each of the families can be qualitatively explained on the basis of a chemically ordered network arrangement wherein structural units of GeSe₂ and Sb₂Se₃ are dispersed among excess Ge or Se. At any temperature, the conductivity of compositions (GeSe₂)_1?C(Sb₂Se₃)_C, for C > 0.12, can be expressed as σ_s = σ₁ exp[?m(1?C)] where σ₁ is the conductivity of Sb₂Se₃ at that temperature, m is a temperature dependent parameter and C is the fractional content of Sb₂Se₃ in the glasses. A reversal in the general trend, which shows an increase of σ and decrease of ΔE with increasing antimony content for (GeSe₂)_1?C^?(Sb₂Se₃)_C compositions, has been observed for glasses with antimony content lower than about 8 at.%.     

A composition dependent thermal behavior of GexSe35−xTe65 glasses

Alternating differential scanning calorimetric (ADSC) studies have been performed to understand the thermal behavior of bulk Ge_xSe_35?xTe₆₅ glasses (17 ? x ? 25); it is found that the glasses with x ? 20 exhibit two crystallization exotherms (T_c1 & T_c2). On the other hand, those with x ? 20.5, show a single crystallization reaction upon heating. The exothermic reaction at T_c1 has been found to correspond to the partial crystallization of the glass into hexagonal Te and the reaction at T_c2 is associated with the additional crystallization of rhombohedral GeTe phase. The glass transition temperature of Ge_xSe_35?xTe₆₅ glasses is found to show a linear but not-steep increase, indicating a progressive, but a gradual increase in network connectivity with Ge addition. It is also found that T_c1 of Ge_xSe_35?xTe₆₅ glasses with x ? 20, increases progressively with Ge content and eventually merges with T_c2 at x ≈ 20.5 (〈r〉 = 2.41); this behavior has been understood on the basis of the reduction in TeTe bonds of lower energy and increase in GeTe bonds of higher energy, with increasing Ge content. Apart from the interesting composition dependent crystallization, an anomalous melting behavior is also exhibited by the Ge_xSe_35?xTe₆₅ glasses.     

Photoelectrical properties of (Sb15As30Se55)100−xTex (0 ⩽ x ⩽ 12.5 at.%) thin films

This paper reports photoelectrical properties of (As₃₀Sb₁₅Se₅₅)_100?xTe_x amorphous chalcogenide films (0 ? x ? 12.5 at.%) through measurements of ‘steady state’ and ‘transient’ photocurrents. The composition dependence of the steady state photocurrent at room temperature shows that the photoconductivity increases while the photosensitivity decreases with increasing Te content. A study of photoconductivity of (As₃₀Sb₁₅Se₅₅)_100?xTe_x at different levels of light intensity reveals that, the photoconductivity increases exponentially with increase in light intensity. The Photocurrent (I_ph) when plotted against light intensity (G) follows a power law (I_ph = G^γ) the exponent γ for (As₃₀Sb₁₅Se₅₅)_100?xTe_x films has been found nearly 0.5 suggesting bimolecular recombination. The transient photoconductivity shows that the lifetime of the carrier decreases with increasing the light intensity. This decrease suggests that the photoconductivity mechanism in our samples was controlled by the transition trapping processes. The increase of Te content results in a monotonic decrease in the band gap and the free carrier life time of (As₃₀Sb₁₅Se₅₅)_100?xTe_x thin films. These results were interpreted on the basis of the chemical-bond approach.     

Studies on the AsSbSe glass system

Results are reported of measurements of the glass transition temperature (T_g), conductivity and density (d) for glasses of the AsSbSe system, with compositions (As, Sb)₄₀Se₆₀ and As_xSb₁₅Se_85?x. The results are compared with glasses of similar compositions of the As_xSe_100?x about compositions in the Ge_xSb₁₅Se_85?x and As_xSe_100?x glasses, in the case of As_xSb₁₅Se_85?x glasses, the As-rich compositions exhibit higher values of T_g and d compared to the stoichiometric composition As₂₅Sb₁₅Se₆₀. These results are discussed in the light of a chemically ordered structural arrangement in these glasses.     

The structure and optical properties of GeO2-GeS2 glasses

Oxy-chalcogenide glasses with compositions of xGeO₂-(100 − x)GeS₂, where 0 ? x ? 100 mol%, have been prepared and studied in terms of their structures and optical properties. X-ray fluorescence spectroscopy shows that Ge:S ratio can deviate from GeS₂ by ∼10 at.%, depending critically upon the preparation conditions. Raman scattering spectroscopy suggests that stoichiometric GeO₂-GeS₂ glasses have a heterogeneous structure in the scale of 1-100 nm. The optical gaps are nearly constant at 3.0-3.5 eV for glasses with 0 ? x ? 80 mol% and abruptly increase to ∼6 eV in GeO₂. This dependence suggests that the optical gap is governed by GeS₂ clusters, which are isolated and/or percolated. Composition-deviated glasses appear as orange and brown, and these glasses seem to have more inhomogeneous structures.     

Non-isothermal crystallization kinetics study on new amorphous Ga20Sb5S75 and Ga20Sb40S40 chalcogenide glasses

Bulk glasses of the system Ga₂₀Sb_xS_80−x (x = 5 and 40) were prepared for the first time by the known melt quenching technique. Non-isothermal differential scanning calorimetric (DSC) measurements of as-quenched Ga₂₀Sb_xS_80−x (x = 5 and 40) chalcogenide glasses reveal that the characteristic temperatures e.g. the glass transition temperature (T_g), the temperature corresponding to the maximum crystallization rate (T_p) recorded in the temperature range 400-650 K for x = 5 and 480-660 K for x = 40 are strongly dependent on heating rate and Sb content. Upon heating, these glasses show a single glass transition temperature (T_g) and double crystallization temperatures (T_p1 and T_p2) for x = 5 which overlapped and appear as a single crystallization peak (T_p) for x = 40. The activation energies of crystallization E_c were evaluated by three different methods. The crystallization data were examined in terms of recent analysis developed for non-isothermal conditions. The crystalline phases resulting from (DSC) have been identified using X-ray diffraction.     

Fabrication and properties of novel low-melting glasses in the ternary system ZnO-Sb2O3-P2O5

Glasses in the ternary system ZnO-Sb₂O₃-P₂O₅ were investigated as potential alternatives to lead based glasses for low temperature applications. The glass-forming region of ZnO-Sb₂O₃-P₂O₅ system has been determined. Structure and properties of the glasses with the composition (60 − x)ZnO-xSb₂O₃-40P₂O₅ were characterized by infrared spectra (IR), differential thermal analysis (DTA) and X-ray diffraction (XRD). The results of IR indicated the role of Sb³⁺ as participant in glass network structure, which was supported by the monotonic and remarkable increase of density (ρ) and molar volume (V_M) with increasing Sb₂O₃ content. Glass transition temperature (T_g) and thermal stability decreased, and coefficient of thermal expansion (α) increased with the substitution of Sb₂O₃ for ZnO in the range of 0-50 mol%. XRD pattern of the heat treated glass containing 30 mol% Sb₂O₃ indicated that the structure of antimony-phosphate becomes dominant. The improved water durability of these glasses is consistent with the replacement of easily hydrated phosphate chains by corrosion resistant P-O-Sb bonds. The glasses containing ?30 mol% Sb₂O₃ possess lower T_g (<400 °C) and better water durability, which could be alternatives to lead based glasses for practical applications with further composition improvement.     

Experimental characterization of amorphous As–Se–Sb alloys

Thin films were thermally evaporated from ingot pieces of the As₃₀Se_70−xSb_x (with 2.5 ⩽ x ⩽ 17.5 at.%) glasses under vacuum of ∼10⁻⁵ Torr. Increasing Sb content was found to affect the thermal and optical properties of these films. Non-direct electronic transition was found to be responsible for the photon absorption inside the investigated films. The chemical bond approach has been applied successfully to interpret the decrease of the glass optical gap with increasing Sb content. Decreasing the thermal stability of the As₃₀Se_70−xSb_x specimen by increasing Sb content is responsible for occurring the amorphous–crystalline process at lower temperatures. Binary As₂Se₃ and Sb₂Se₃ phases are the main components of the stoichiometric As₃₀Se₆₀Sb₁₀ composition.     

Crystallization of monoclinic WO3 in tungstate fluorophosphate glasses

Tungstate fluorophosphate glass compositions with high WO₃ concentration were prepared in the ternary system (80−0.8x)NaPO₃-(20−0.2x)BaF₂-xWO₃ with x = 40,50 and 60 mol%. Transparency decreases as WO₃ concentration increases but can be improved by addition of oxidizing systems such as CeO₂ or Sb₂O₃/NaNO₃. Characterizations by thermal analysis (DSC) point out that an increase in the amount of WO₃ results in a higher glass transition temperature. In addition, such compositions are very stable against devitrification since samples containing 40% and 50% of WO₃ donot even exhibit the expected crystallization event. In these samples, the stability against crystallization decreases with the WO₃ content and vitreous sample containing 60% of WO₃ exhibits an endothermic event around 620 °C due to crystallization of monoclinic WO₃ phase. In these glasses, it was shown that the nucleation stage can be induced by thermal-treatment when external nucleating agents such as Ti or Sb are used. Finally, gold-doped samples exhibit a higher crystallization tendency and monoclinic WO₃ phase can be grown in such glasses.