A low silica, barium borate glass-ceramic for use as seals in planar SOFCs

A low silica, barium borate glass-ceramic for use as seals in planar SOFCs containing 64 mol%BaO, 3 mol%Al₂O₃ and 3 mol%SiO₂ was studied. Coefficient of thermal expansion (CTE) between 275-550 °C, glass transition temperature (T_g), and dilatometric softening point (T_s) of the parent glass were 11.9 × 10⁻⁶ °C⁻¹, 552 °C, and 558 °C, respectively. Glass-ceramic was produced by devitrification heat treatment at 800 °C for 100 h. It was found that nucleation heat treatment, seeding by 3 wt%ZrO₂ as glass-composite and pulverization affected the amount, size and distribution of crystalline phases. SEM-EDS and XRD results revealed that crystalline phases presented in the devitrified glass-ceramic were barium aluminate (BaAl₂O₄), barium aluminosilicate (BaAl₂Si₂O₈) possibly with boron associated in its crystal structure, and barium zirconate (BaZrO₃). CTE of the devitrified glass-ceramic was in the range of (10.1-13.0) × 10⁻⁶ °C⁻¹. Good adhesion was obtained both in the cases of glass and devitrified glass-ceramic with YSZ and AISI430 stainless steel. Interfacial phenomena between these components were discussed.     

Synthesis of Nb2O5·nH2O nanoparticles by water-in-oil microemulsion

Hydrous niobium oxide (Nb₂O₅·nH₂O) nanoparticles had been successfully prepared by water-in-oil microemulsion. They were characterized by X-ray diffraction (XRD), thermal analysis (TG/DTG), Fourier transform infrared spectroscopy (FTIR), BET surface area measurement, transmission electron microscopy (TEM), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS). The results showed that the nanoparticle was exactly Nb₂O₅·nH₂O with spherical shape. Their BET surface area was 60 m² g⁻¹. XRD results showed that Nb₂O₅·nH₂O nanoparticles with crystallite size in nanometer scale were formed. The crystallinity and crystallity size increased with increasing annealing temperature. TT-phase of Nb₂O₅ was obtained when the sample is annealed at 550 °C.     

Thermo-optic properties of B2O3 doped Li2O-Al2O3-SiO2 glass-ceramics

Reduction in the temperature coefficient of the optical path length, dS/dT of Li₂O-Al₂O₃-SiO₂ glass-ceramics with near-zero thermal expansion coefficient was attempted using control of the temperature coefficient of electronic polarizability, ?, and the thermal expansion coefficient, α. The dS/dT value of 2.6 mol% B₂O₃-doped glass-ceramic was 12.5  × 10⁻⁶/°C, which was 0.9 ×  10⁻⁶/°C smaller than that of B₂O₃-free glass-ceramic. On the other hand, reduction in dS/dT through B₂O₃ doping was not confirmed in precursor glasses. Results showed that reduction in dS/dT of the glass-ceramic through B₂O₃ doping is caused by the reduction in ?. The reduction in ? from B₂O₃ doping was probably attributable to numerical reduction in non-bridging oxide ions with larger ? value by the concentration of boron ions in the residual glass phase. In addition, application of hydrostatic pressure during crystallization was effective to inhibit precipitation of β-spodumene solid solution, which thereby decreases dS/dT. The dS/dT value of B₂O₃-doped glass-ceramic crystallized under 196 MPa was 11.7 ×  10⁻⁶/°C. That value was slightly larger than that of silica glass. The α value of this glass-ceramic was smaller than that of silica glass.     

Development and characterizations of BaO-CaO-Al2O3-SiO2 glass-ceramic sealants for intermediate temperature solid oxide fuel cell application

Several compositions based on BaO-CaO-Al₂O₃-SiO₂ (BCAS) glass system have been studied in this investigation to see their applicability as sealant for solid oxide fuel cell (SOFC). The glasses as well as the corresponding glass-ceramics have been systematically characterized by differential thermal analysis, dilatometry, X-ray diffractometry, electron microscopy and impedance analysis to examine their suitability as sealant. While the glass transition temperature (T_g) determined from DTA are within 600-665 °C, the coefficient of thermal expansion (CTE) can be tailored between 9.5 and 13.0 × 10⁻⁶ K⁻¹. These glasses are found to be well adhered with metallic interconnects, such as commercial ferritic steel (Crofer22APU), at an optimum sealing temperature of 850 °C. The shrinkage behavior of the developed glasses in their pellet form has also been investigated. The resistivities of the glass-ceramics, as obtained from impedance analysis, are found to be within 10⁴-10⁶ Ω cm at 800 °C. Under sandwiched condition between two metals, some of the developed compositions are found to maintain this high resistivity even after 100 h of operation. One of the glass compositions has shown a low leak-rate of the order of ∼10⁻⁷ Pa m² s⁻¹.     

Thermodynamics of the Cu/Cu-redox equilibrium in soda-silicate and soda-lime-silicate melts

The thermodynamics of the redox equilibrium of Cu⁺/Cu²⁺ were determined by square-wave voltammetry in glass melts with the base mol% compositions x Na₂O · (100 − x) SiO₂ (x = 15, 20, 26 and 33) and (26 − x) Na₂O · x CaO · 74 SiO₂ (x = 0, 5, 10 and 15) doped with 1 mol% CuO in the temperature range from 850 to 1150 °C. All recorded voltammograms showed two maxima attributed to the reductions of Cu²⁺ to Cu⁺ and Cu⁺ to metallic copper. Both peaks are shifted to smaller potentials with decreasing temperature. With increasing melt basicity, the [Cu⁺]/[Cu²⁺]-ratio first increases, and remains constant for optical basicities >0.56. The effect of composition on the redox equilibrium is explained by the incorporation of both Cu⁺ and Cu²⁺ in octahedral coordination into the melt structure.     

Investigation of structural and compositional changes in silver-doped GeO2 thin films

The processes going on in silver-doped GeO₂ films during air-heating were investigated by XPS, TEM, IR and UV-visible spectroscopy methods. Silver was shown to interact with the GeO₂ matrix at 500-600 °C to give silver germanate which was decomposed on further heating to form GeO₂ and silver nanoparticles, 10-35 nm in size, absorbing in the plasmon resonance region (λ_max = 415 nm). The silver nanoparticles are located deep in the films and encapsulated by oxide particles.     

Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al₂O₃ (1 1 2¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 60 °C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (ω-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.50° for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a=0.3250 nm and c=0.5207 nm) were very close to those of the wurtzite-type ZnO. The ZnO film on the ZnO-buffered Al₂O₃ (1 1 2¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9×10¹⁹ cm⁻³ and high carrier mobility of 22.6 cm² V⁻¹ s⁻¹.     

Influence of hydrogen on structural and optical properties of low temperature polycrystalline Ge films deposited by RF magnetron sputtering

To improve the properties of polycrystalline Ge thin films, which are a candidate material for the bottom cells of low cost monolithic tandem solar cells, ∼300 nm in situ hydrogenated Ge (Ge:H) thin films were deposited on silicon nitride coated glass by radio-frequency magnetron sputtering. The films were sputtered in a mixture of 15 sccm argon and 10 sccm hydrogen at a variety of low substrate temperatures (T_s)≤450 °C. Structural and optical properties of the Ge:H thin films were measured and compared to those of non-hydrogenated Ge thin films deduced in our previous work. Raman and X-ray diffraction spectra revealed a structural evolution from amorphous to crystalline phase with increase in T_s. It is found that the introduction of hydrogen gas benefits the structural properties of the polycrystalline Ge film, sputtered at 450 °C, although the onset crystallization temperature is ∼90 °C higher than in those sputtered without hydrogen. Compared with non-hydrogenated Ge thin films, hydrogen incorporated in the films leads to broadened band gaps of the films sputtered at different T_s.     

Low-temperature deposition of crystalline silicon nitride nanoparticles by hot-wire chemical vapor deposition

The nanocrystalline alpha silicon nitride (α-Si₃N₄) was deposited on a silicon substrate by hot-wire chemical vapor deposition at the substrate temperature of 700 °C under 4 and 40 Torr at the wire temperatures of 1430 and 1730 °C, with a gas mixture of SiH₄ and NH₃. The size and density of crystalline nanoparticles on the substrate increased with increasing wire temperature. With increasing reactor pressure, the crystallinity of α-Si₃N₄ nanoparticles increased, but the deposition rate decreased.     

Thermal properties and crystallization of iron phosphate glasses containing up to 25 wt% additions of Si-, Al-, Na- and U-oxides

The thermal properties (expansion, T_g and T_SOFT.) of glasses, having 56-66% P₂O₅, 14.8-34.2% Fe₂O₃ and 2-25 wt% additions of SiO₂, Al₂O₃, Na₂O and UO₂, were comparatively estimated from dilatometric measurements in similar conditions. The T_g reversibility was clearly verified by varying the heating rates between 1 and 5 °C min⁻¹. From linear equations fits of the various glass properties as functions of the six components it is suggested the iron, sodium and uranium oxides decrease the thermal expansion (for 50 < T ? 300 °C), T_g and T_SOFT. From DTA/XRD analysis of three glasses it was confirmed the crystallization tendency decreased with increasing the UO₂ level in the glasses. Leaching test data for two compositions containing Na₂O suggest addition of UO₂ increases the chemical durability of the related glass. The roles of UO₂, Na₂O and Fe-oxide species as structural components of the glass network are discussed.     

Thermogravimetric analysis and microstructural observations on the formation of GaN from the reaction between Ga2O3 and NH3

Thermogravimetric analysis (TGA) and microstructural observations were carried to investigate the nitridation mechanism of β-Ga₂O₃ powder to GaN under an NH₃/Ar atmosphere. Non-isothermal TGA showed that nitridation of β-Ga₂O₃ starts at ∼650 °C, followed by decomposition of GaN at ∼1100 °C. Isothermal TGA showed that nitridation follows linear kinetics in the temperature range 800–1000 °C. At an early stage of nitridation, small GaN particles (∼5 nm) are deposited on the β-Ga₂O₃ crystal surface and they increase with time. We proposed a mechanism for the nitridation of Ga₂O₃ by NH₃ whereby nitridation of β-Ga₂O₃ proceeds via the intermediate vapor species Ga₂O(g).     

Hydrothermal synthesis of organic hybrid BaTiO3 nanoparticles using a supercritical continuous flow reaction system

Barium titanate (BaTiO₃: BT) nanoparticles were synthesized by the hydrothermal method in the presence of dispersants using a continuous supercritical flow reaction system. The reactants of TiO₂ sol/Ba(NO₃)₂ mixed solution and KOH solution were used as starting materials and that was heated quickly up to 400 °C under the pressure of 30 MPa for 8 ms as reaction time. The dispersant solution such as polyacrylic acid (PAA) and polyoxyethylene(20) sorbitan monooleate (Tween 80) was injected in the cooling process after the reaction. The crystal phase of the obtained particles was identified as perovskite cubic BaTiO₃ by X-ray diffractometry (XRD) and Raman spectroscopy. Raman spectra and thermogravimetric data revealed that PAA and Tween 80 fabricated hybrid BT nanoparicles. Primarily particle size of the BaTiO₃ nanoparticle was determined by means of BET surface area, as small as less than 10 nm irrespective of dispersants. In contrast, dispersed particle size in solution measured by dynamic light scattering (DLS) technique decreased from 282 nm to less than 100 nm depending on the dispersant. Aggregation of BaTiO₃ nanoparticles might be depressed in the presence of dispersants, especially PAA is the most effective among the dispersants examined.     

Crystallization and dielectric properties of low temperature dielectrics containing Li2O filler

Crystallization and dielectric properties of typical low temperature co-fired ceramics (LTCC) consisting of calcium zinc aluminoborosilicate glass and Al₂O₃ filler were investigated by substituting the Al₂O₃ filler partially with Li₂O at the levels of 2-10 wt%. Depending on the content of Li₂O, densification was found significantly affected by early crystallization that resulted from the formation of unexpected crystalline phases including LiAlSiO₄, Ca₂SiO₄, LiAlO₂, and LiAlSi₃O₈. The effect of hindering sintering via earlier crystallization became enormous regardless of firing temperature when >5 wt% Li₂O substitution occurred. It was observed that the substitution of 2 wt% Li₂O for Al₂O₃ was beneficial in producing promising performance at the low temperature of 750 °C, which can be highlighted with k ∼ 8.7 and tan δ ∼ 0.009 at 1 MHz.     

Structure and growth morphology of Gd2O3-doped CeO2 thin films

Gd₂O₃-doped CeO₂ (Gd_0.1Ce_0.9O_1.95, GDC) thin films were synthesized on (1 0 0) Si single crystal substrates by a reactive radio frequency magnetron sputtering technique. Structures and surface morphologies were characterized by X-ray diffraction (XRD), Atomic Force Microscopy (AFM) and one-dimensional power spectral density (1DPSD) analysis. The XRD patterns indicated that, in the temperature range of 200–700 °C, f.c.c. structured GDC thin films were formed with growth orientations varying with temperature—random growth at 200 °C, (2 2 0) textures at 300–600 °C and (1 1 1) texture at 700 °C. GDC film synthesized at 200 °C had the smoothest surface with roughness of R_rms=0.973 nm. Its 1DPSD plot was characterized with a constant part at the low frequencies and a part at the high frequencies that could be fitted by the f^−2.4 power law decay. Such surface feature and scaling behavior were probably caused by the high deposition rate and random growth in the GDC film at this temperature. At higher temperatures (300–700 °C), however, an intermediate frequency slope (−γ₂≈−2) appeared in the 1DPSD plots between the low frequency constant part and the high frequency part fitted by f⁻⁴ power law decay, which indicated a roughing mechanism dominated by crystallographic orientation growth that caused much rougher surfaces in GDC films (R_rms>4 nm).     

Formation of gallium nitride particles during the two-stage chemical vapor process

The effects of the reaction temperature in the first stage T_I on the formation and the luminescent property of both the seed and the grown particles were investigated in the region from 1050 to 1200 °C for the two-stage vapor-phase synthesis of GaN particles. The reaction efficiency of vaporized Ga and NH₃ to form the seed particles increased with increasing T_I up to about 1150 °C, where the maximum value of about 70% was obtained. Further raising T_I caused a decrease of the efficiency. The X-ray diffraction and the photoluminescence (PL) measurements indicated both of the crystal quality and the luminescent property of the seed particle were improved with increasing T_I. On the other hand, the PL intensity of the particles grown on the seed in the second stage decreased with increasing T_I. This difference in the dependence was explained in terms of the morphology of the grown particles. The mechanism of particle formation during these processes was also discussed based on the results.     

Sodium tracer diffusion in glasses of the type (CaO·Al2O3)x(2 SiO2)1−x

Tracer diffusion coefficients of the radioactive isotope Na-22 were measured in glasses of the type (CaO·Al₂O₃)_x(2 SiO₂)_1−x to study the diffusion of sodium as a function of glass composition, x, temperature and initial water content. The diffusion of Na-22 in glasses diffusion-annealed in dry air can always be well described by a single tracer diffusion coefficient, but sometimes not in samples annealed in common air. It was found that the sodium tracer diffusion coefficient decreases by about six orders of magnitude when the glass composition x changes from 0 to 0.75 at 800 °C. The temperature dependence of the diffusion of sodium seems to decrease as the silica content increases. Variations of the initial water content in some of the glasses investigated did not very significantly influence the rate of the tracer diffusion of sodium.     

Effect of P2O5 on the early stage crystallization of K-fluorrichterite glass-ceramics

The addition of 2 mol% P₂O₅ to stoichiometric K-fluorrichterite (KNaCaMg₅Si₈O₂₂F₂, KFR) has been reported to enhance the mechanical properties and improve the in vitro biocompatibility of this glass-ceramic by promoting the formation of enstatite and fluorapatite (FA). Here, the effect of further increasing the P₂O₅ concentration on phase evolution of KFR has been investigated. XRD data showed that mica crystallized in samples with 4 and 5 mol% P₂O₅ (GP4 and GP5, respectively) at 650 °C, but no diopside was detected at higher temperatures, in contrast with the general phase evolution in KFR based glass-ceramics. More importantly, however, the addition of ?4 mol% P₂O₅ induced phase separation of the glass into a silica glass matrix and phosphate rich droplets prior to crystallization. EDS traces taken from samples heat-treated at 600 °C, revealed that the silica glass matrix was deficient in Mg and unlikely to be the host for crystallization of mica. Conversely, the P₂O₅ rich regions contained excess Mg and were considered to be the host for the formation of mica and FA.     

Coexistence properties of phase separation and CuPt-ordering in InGaAsP grown on GaAs substrates by organometallic vapor phase epitaxy

CuPt-ordering and phase separation were directly investigated in In_1-xGa_xAs_yP_1-y with a low arsenic content grown by organometallic vapor phase epitaxy on GaAs substrates. CuPt-ordering and phase separation in samples grown at the substrate temperatures of 630 and 690 °C were characterized by transmission electron diffraction and transmission electron microscopy. Although the immiscibility of InGaAsP was enhanced at the lower substrate temperature, the sample grown at 630 °C showed less phase separation than the 690 °C-grown sample. The degree of CuPt-ordering was significantly enhanced in the sample grown at 630 °C. The results demonstrated that the CuPt-ordering originating from surface reconstruction of P(2×4) suppressed the phase separation even in the miscibility gap. The detailed characterization of the phase separation clearly revealed a vertical composition modulation (VCM) in InGaAsP for the first time. The mechanism of the VCM formation is discussed based on the modulated-strain field on the surface.     

Optical properties of nanocomposites with iron core-iron oxide shell structure

Iron nanoparticles of diameter ∼5 nm were produced within a gel-derived silica glass by reducing a suitable gel composition. By heating these composites in the temperature range 573-973 K, Fe₃O₄ shells of a few nanometer thickness were grown around the iron nanoparticles. Three peaks were observed in the optical absorption spectra of the nanocomposites when they were dispersed in ethyl alcohol. The first one around 300 nm was caused by plasma resonance absorption of unoxidized iron particles; the second was shown to be due to the core-shell structure with different permittivities of the two regions and the third one was ascribed to a d-d transition. Detailed analyses of the second peak showed that the extracted values of electrical conductivity were below Mott’s minimum metallic conductivity for iron in the case of particles with diameters below ∼2.5 nm.     

Planar waveguides by ion exchange in Er-doped tellurite glass

This work reports the preparation of planar waveguides by Ag⁺ → Na⁺ ion exchange in Er³⁺-doped tellurite glass with a composition of 75TeO₂-2GeO₂-10Na₂O-12ZnO-1Er₂O₃ (mol%). The metric, of T_x − T_g, indicates that the glass has good thermal stability. Measurments of refractive index, absorption spectrum, luminescence and lifetime were made. The glass was chemically stable during the ion exchange process. Monomode and multimode planar waveguides in the tellurite glasses have been prepared. We determined the depth of the guides, effective diffusion coefficient and the activation energy. The depths of the waveguides could be controlled by varying ion exchange temperatures and times (250-280 °C, and 3-12 h were used).