Bound polaron in quantum dot quantum well structures

The problem of bound polarons in quantum dot quantum well (QDQW) structures is studied theoretically. The eigenfrequencies of bulk longitudinal optical (LO) and surface optical (SO) modes are derived in the framework of the dielectric continuum approximation. The electron--phonon interaction Hamiltonian for QDQW structures is obtained and the exchange interaction between impurity and LO-phonons is discussed. The binding energy and the trapping energy of the bound polaron in CdS/HgS QDQW structures are calculated. The numerical results reveal that there exist three branches of eigenfrequencies of surface optical vibration in the CdS/HgS QDQW structure. It is also shown that the binding energy and the trapping energy increase as the inner radius of the QDQW structure decreases, with the outer radius fixed, and the trapping energy takes a major part of the binding energy when the inner radius is very small.     

极化子效应对ZnS/CdSe柱型核壳量子点简并四波混频过程的影响

理论计算了带有极化子效应的ZnS/CdSe柱型核壳结构量子点简并四波混频的三阶极化率.在有效质量近似下,采用无限深势阱模型,导出了带有极化子效应的柱型量子点的三阶非线性光学极化率的解析表达式,解三维薛定谔方程得到电子的本征能量和波函数.分析了电子-LO声子和电子-IO声子相互作用对ZnS/CdSe核壳结构量子点简并四波混频的三阶极化率的影响.结果表明,当量子点尺寸一定时,带有极化子效应的χ(3)DFWM比没有极化子时的三阶极化率提高了近3个数量级,并且电子-LO声子的影响比电子-IO声子的影响大得多;当固定核壳量子点的阱宽而内外半径发生变化时,χ(3)DFWM的峰值随之变化,而且极化子效应影响的大小也随之发生变化.     

Parameter-dependent photon echo induced in CdSe/ZnS quantum dot quantum well

The two pulse photon echo (2PPE) phenomena induced by the 1s-1s electronic transition in CdSe/ZnS quantum dot quantum well (QDQW) has been studied by employing semiconductor Bloch equations. The energy eigenvalues and eigenfunctions of electrons and holes have been obtained by solving the stationary Schrödinger equation under effective-mass approximation. The Coulomb interaction, which changes with the size variation of QDQW, has been calculated and analyzed as a perturbation. The variations of the electric transition dipole moment and the energy interval with the changing of the size and structure of the QDQW have also been obtained. It has been shown from the numerical calculation results that the efficiency of 2PPE can be controlled by the variation of the size and structure of the QDQW and the mechanism has been explained in terms of the quantum size confined effect (QSCE) theory.     

近简并四波混频相位共轭介质中的光强分布

从求解耦合波方程出发，详细研究了非线性光学介质中由近简并四波混频所产生的相位共轭过程。以上述波方程的解为基础，给出作为混频结果的反射传播相位共轭波沿介质轴向的光强分布，得到比以往文献中所报道的更为精确的结果，从而为选择工作物质的最佳尺寸提供了理论依据。     

Fluorescence correlation spectroscopy of CdSe/ZnS quantum dot optical bioimaging probes with ultra-thin biocompatible coatings

The colloidal stabilities and emission properties of CdSe/ZnS quantum dot (QD) optical probes capped with a variety of thin, hydrophilic surface coatings were studied using confocal fluorescence correlation spectroscopy. These coatings are based on mercaptoethanol, mercaptopropionic acid (with and without conjugated aminoethoxyethanol), lipopolymers (DSPE-PEG2000), cysteine (Cys), and a variety of Xaa-Cys dipeptides. The study shows that QDs with thin hydrophilic coatings can be designed that combine good colloidal stability and excellent emission properties (brightness). Furthermore, there is a general correlation between colloidal stability and brightness. The experiments reported illustrate that QDs with multiple types of thin coatings can be created for optical imaging applications in a biological environment while also maintaining a size below 10 nm.     

球形ZnS/CdSe/ZnS核壳壳量子点的三阶极化率参量相关特征

在有效质量近似下,利用量子力学的密度矩阵理论,采用无限深势阱模型导出了三层球型量子点的三阶非线性光学极化率(自聚焦)的解析表达式.通过数值计算,分析了ZnS/CdSe/ZnS球型核壳结构量子点的三阶极化率(自聚焦)与量子点尺寸和入射光频率之间的关系.结果显示,量子点尺寸增大时,自聚焦效应三阶极化率(自聚焦)的峰值高度增大,峰值位置红移.本文的讨论为实验研究和实际应用提供了理论依据,对于光电器件的研究和改进有参考价值.     

基于氧化镁晶体中级联四波混频过程的紫外飞秒光脉冲产生

紫外波段飞秒激光脉冲是研究超快化学和超快物理相关过程的重要工具,实现波长可调谐的宽带紫外飞秒光脉冲将有助于推动超快动力学及相关领域的研究.本文报道了以两束400 nm的飞秒光脉冲作为级联四波混频的抽运源,在氧化镁晶体中产生9阶频率上转换和5阶频率下转换边带信号的实验结果.边带波长范围从350 nm到450 nm连续可调谐,这些边带信号的发散角和波长与级联四波混频理论预测结果吻合.紫外边带相对于入射光的整体转化效率约为1.2%.同时,高阶边带的光谱形状呈现高斯型,其谱宽理论上支持傅里叶转换极限脉宽为20—50 fs.本文展示了一种高效产生波长可连续调谐的紫外飞秒光脉冲的便捷方法,为基于紫外超短脉冲的相关研究提供了有效工具.     

Characteristics of wavelength conversion of short optical pulses in quantum dot semiconductor optical amplifiers

The characteristics of short optical pulse four-wave mixing (FWM) and amplification in quantum dot semiconductor optical amplifiers (QD-SOAs) are investigated taken into account the effect of the multi-discrete QD energy levels. Different saturation and recovery response for the electron and hole states are observed, which is attributed to different energy spacing between the energy states. We found that the 3 dB saturation energy of QD-SOA depends on the pulse width for short input pulses. Also, the optimum time delay between the probe and pump pulses in QD-SOAs, which provides maximum FWM efficiency in QD-SOAs, is smaller than the optimum delay in quantum well SOA.     

Band structure and impurity effects on optical properties of quantum well and quantum dot infrared photodetectors

We examined theoretically band structure and discrete dopant effects in the quantum well infrared photodetector (QWIP) and the quantum dot infrared photodetector (QDIP). We find that in QWIPs discrete dopant effects can induce long wavelength infrared absorption through impurity assisted intra-subband optical transitions. In QDIPs, we find that a strategically placed dopant atom in a quantum dot can easily destroy the symmetry and modify the selection rule. This mechanism could be partially responsible for normal incidence absorption observed in low-aspect-ratio quantum dots.     

Theory of pulse propagation and four-wave mixing in a quantum dot semiconductor optical amplifier

A theory, combining the relations of pulse traveling into quantum dot (QD) semiconductor optical amplifier (SOA) with the four-wave mixing (FWM) theory in these SOAs, is developed. Carrier density pulsation (CDP), carrier heating (CH), and spectral hole burning (SHB) contributions on FWM efficiency are discussed. Effect of QD ground state and wetting layer are included. An additional parameter appears in the gain integral relation of QD SOAs. An equation formulating pulses in the QD SOAs is introduced. We have found that FWM in QD SOAs is detuning and is pulse width dependent. For short pulses, CH is dominant at high detunings (10–100 GHz) while at higher detunings (>100 GHz) the SHB is the dominant one. Undesired paunch behavior is shown in QD SOAs then, CDP must be reduced.     

镶嵌于玻璃中的CdSe1-xSx量子点的电调制光谱测量

采用直流偏置的交流调制电场测量了玻璃中各向同性的CdSe1 xSx 量子点的电调制光谱 ,介绍了各向同性材料电调制光谱的测量方法 ,分析了与一般电调制光谱测量方法不同的原因。采用偏置后的交流调制电场 ,可以检测到与电场同频率 ( 1f)而位相差 90°的CdSe1 xSx 量子点的电吸收信号 ,该信号比采用二倍频检测 ( 2 f)的信号大一个数量级 ,比通常采用正弦波调制电场的信号大 3个数量级。采用直流偏置调制电场有利于各向同性材料的电光性能的测量     

Generation of photon pairs in dispersion shift fibers through spontaneous four wave mixing: Influence of self-phase modulation

Correlated signal and idler photon pairs with small detuning in the telecom band can be generated through spontaneous four-wave mixing in dispersion shift fibers. However, photons originated from other nonlinear processes in optical fibers, such as Raman scattering and self-phase modulation, may contaminate the photon pairs. It has been proved that photons produced by Raman scattering are the background noise of photon pairs. Here we show that photons induced by self-phase modulation of pump pulses are another origin of background noise. After studying the dependence of self-phase modulation induced photons in signal and idler bands, we demonstrate that the quantum correlation of photon pairs can be degraded by the self-phase modulation effect. The investigations are useful for characterizing and optimizing an all fiber source of photon pairs.     

Investigation of tunable trap filter utilizing intense signal four wave mixing model in highly non-linear fiber

Tunable trap filter based on highly non-linear fiber (HNLF) utilizing degenerate four wave mixing (FWM) model has been proposed and investigated. The output powers in a FWM configuration are calculated as a function of the input signal power, with the result that new-wavelength is efficiently generated, leading to about −26 dB signal depletion. The signal loss spectra are also simulated under the condition of different initial signal powers, injected wavelengths, and fiber lengths.     

Parameter-dependent third-order optical nonlinearity in a CdSe/ZnS quantum dot quantum well in the vicinity of a gold nanoparticle

The nonlinear optical properties of the CdSe/ZnS quantum dot quantum well (QDQW) in the vicinity of a spherical metal nano-particle (MNP) have been described. The third-order nonlinear optical susceptibility induced by the transition between E₁ (inside the well) and E₂ (outside the well) has been calculated for the third-harmonic generation (THG) under the effective mass approximation and modified by the local field theory. The parameters-dependent third-order nonlinear optical susceptibility for the THG has been specifically explored and the influence of the distance between the QDQW and the MNP on the third-order susceptibility for the THG in the system has been shown and analyzed.     

Photoionization of a charged exciton in a GaAs/GaAlAs corrugated quantum well

Binding energies of a charged exciton as a function of well width of a GaAs/GaAlAs corrugated quantum well are investigated. The calculations have been performed by the variational method based on a two parametric trial wave function within a single band effective mass approximation. We have also included the effect of nonparabolicity of the conduction band of GaAs. We study the spectral dependence of the charged exciton in a GaAs/GaAlAs corrugated quantum well as a function of well width. The photoionization cross section for the charged exciton placed at the center of the quantum well is computed as a function of normalized photon energy. The cross-section behavior as a function of incident energy is entirely different in the two cases of radiation being x-direction (along the growth direction) or z-direction. The interband emission energy as a function of well width is calculated and the dependence of the photoionization cross section on photon energy is carried out for the charged excitons. The resulting spectra are brought out for light polarized along and perpendicular to the growth direction. The results show that the charged exciton binding energy, interband emission energy and the photoionization cross section depend strongly on the well width. Our results are compared with the other existing literature available.     

On the polarisation sensitivity and performance optimisation of a dual pump four wave mixing based wavelength converter

This paper presents a detailed investigation of the performance of a wavelength conversion scheme. The converter is based on four wave mixing in semiconductor optical amplifiers using two parallel polarised pumps. Measurements of the conversion efficiency and the signal to background noise ratio of the two replicas of the signal, for the cases of the signal polarisation being either parallel or orthogonal relative to the pump waves have been carried out. These measurements will reveal the polarisation sensitivity of this scheme which appears to be less than 1 dB when the wavelength spacing between the signal and its closest spaced pump is larger than 12 nm. The experimental results are supported in a satisfactory way by theoretical considerations. A simple theoretical expression describing the polarisation sensitivity have been derived and the theoretical results are in good agreement with those experimentally obtained. A performance comparison of the conversion scheme using semiconductor optical amplifiers with different lengths but the same structure is also performed. Through the following study the optimum operational conditions for this wavelength conversion scheme will be determined.     

Control of unpolarized emission in closely stacked InAs quantum dot structure

In this work, we studied the effect of some growth parameters on the polarization behavior of InAs/GaAs closely stacked quantum dot (CSQDs). In particular, we focused on the surface reconstruction time of GaAs spacer, its thickness and the number of QD layers. We found that the most effective parameter to enhance the TM/TE intensity ratio is the surface reconstruction time of the GaAs spacer before the subsequent QD deposition. By varying this parameter between 20 s and 120 s, a TM/TE ratio as high as 0.86 has been achieved. A further fine tuning of GaAs spacer thickness and QD layer number increased this ratio up to a value of 0.92 in structures containing only 3 QD layers.     

Radiative quantum efficiency of CdSe/ZnS quantum dots suspended in different solvents

The radiative quantum efficiencies η of the CdSe/ZnS core-shell nanoparticles embedded into polymethyl methacrylate (PMMA) and suspended in three different solvents: chloroform (CHCl₃), toluene (C₆H₅CH₃) and tetrahydrofuran (C₄H₈O) were measured using thermal lens (TL) technique. The mode-mismatched pump-probe TL measurements were accomplished in function of the CdSe/ZnS quantum-dot concentration (12-60 mg/ml) at λ_e = 594 nm (pump) and λ_p = 632.8 nm (probe). The values obtained for η were higher for CdSe/ZnS nanoparticles suspended in tetrahydrofuran and chloroform, as compared to the values for toluene. Thermal diffusivity (D) and the absolute nonradiative quantum efficiency (φ) were determined.     

Enhancement of four-wave mixing process in a four-level double semiconductor quantum well

The time-dependent four-wave mixing（FWM） is analyzed in a four-level double semiconductor quantum well. The results show that both the amplitude and the conversion efficiency of the FWM field are enhanced with increasing the strength of two-photon Rabi frequency. Interestingly, when the one-photon detuning becomes stronger the control field corresponding to the maximum efficiency increases. Such a controlled enhanced FWM may be used to generate coherent short-wave length radiation, and it can have potential applications in quantum control and communications.