Femtosecond pulse squeezing limited by stimulated Raman process in optical fibers

Optical fiber-based squeezing with transmission characteristics in the positive, zero, and negative group-velocity dispersion regions was studied, using a femtosecond Cr⁴⁺:YAG laser and reflection-type interferometers. The squeezing was limited by a stimulated Raman process-related phenomenon in all the dispersion regions. The primary limiting factor was a phase variation between a Raman soliton and other spectral components that were taken in the soliton through the stimulated Raman process. The maximum squeezing was −3.3 dB, which was obtained within a positive group-velocity dispersion region. Although a polarization-maintaining fiber is generally required as a squeezer, polarization non-maintaining fibers with a small amount of polarization-maintaining fiber are also utilizable.     

A novel demonstration of photoacoustic Raman spectroscopy with combined stimulated Raman pumping in H2 molecule

We present the experimental demonstration of a novel, efficient, and vibrational selective technique to prepare population in vibrational level v″ = 1 using the stimulated Raman pumping. Photoacoustic Raman signal has been studied in non-radiative transitions in the molecule H₂ (v″ = 0) and (v″ = 1). The population fraction in the v″ = 1 level can be estimated by using combined photoacoustic Raman spectroscopy with stimulated Raman pumping for the first time.     

A multichannel Raman spectrometry study of polyacetylene isomerization induced by laser irradiation

The multichannel Raman spectrometry has been used in the study of the isomerization reaction of an 80% cis PA film into a trans PA, using a laser beam for a double purpose. It is employed simultaneously as an activation agent inducing the isomerization reaction and the Raman diffusion. In each experience, the power of the laser beam Pⁱ(λ) was equivalent to the temperature. Twelve spectra have been recorded at different time periods tj = j·dt. The integrations of the Raman intensities related to two selected bands were numerically calculated.We also proposed an original method for the determination of the isomeric composition. A quantitative relationship between the equilibrium temperature and the laser beam power (in the range of laser power: 30 < Pⁱ(λ) < 300 mW) has been found. An estimate number of isomerized molecules N₀ and then a correction factors f_cis and f_trans were also obtained.     

The size and strain effects on the Raman spectra of Ce1−xNdxO2−δ (0≤x≤0.25) nanopowders

Ultrafine Ce_1−xNd_xO_2−δ (x=0-0.25) powders were synthesized by self-propagating room temperature synthesis. Raman spectra were measured at room temperature in the 300-700 cm⁻¹ spectral range. The shift and asymmetric broadening of the Raman F_2g mode at about 454 cm⁻¹ in pure and doped ceria samples could be explained with combined size and inhomogenous strain effects. Increased concentration of O²⁻ vacancies with doping is followed by an appearance of new Raman feature at about 545 cm⁻¹.     

A novel dispersion-shifted single mode optical fiber design with ultra-high-bit-rate and very low loss for long-haul communications

In this paper, a novel dispersion-shifted multi-clad optical fiber with very small bending loss and ultra-high bit-rate applicable for large capacity information transmission systems is presented. To decrease dispersion and higher-order dispersion effects at λ = 1.55 μm, a weighted pulse broadening factor and genetic algorithm (GA) optimization technique is used. Compared to the works reported previously, this method can precisely set the zero-dispersion wavelength. This kind of dispersion-shifted fibers has dispersion, dispersion slope, mode field diameter (MFD), effective area and quality factor within −1.40 × 10⁻⁴ to −8.44 × 10⁻² ps/km nm, 3.06 × 10⁻² to −4.07 × 10⁻² ps/km nm², 5.56−5.85 μm, 119.25−176.42 μm² and 3.49-5.27 at λ = 1.55 μm, respectively. Besides, by applying dispersion at λ = 1.55 μm as the cost function, dispersion of about 1.31 × 10⁻⁸ ps/km nm is obtained. Thus, this novel optical fiber can be used in long-haul high information-transmission capacity communication systems.     

Raman spectroscopic and photoluminescence study of single-crystalline SnO2 nanowires

Single-crystalline SnO₂ nanowires with sizes of 4-14 nm in diameter and 100-500 nm in length were produced in a molten salt approach by using hydrothermal synthesized precursor. Structural characters of the nanowires were examined by X-ray diffraction and high-resolution electron transmission microscopy. Raman, photoluminescence and X-ray photoelectron spectra of the samples were examined under heat treatments. Three new Raman modes at 691, 514 and 358 cm⁻¹ were recorded and assigned. The former two are attributed to activation of original Raman-forbidden A_2uLO mode and the third is attributed to defects in small-sized nanowires. A strong photoluminescence is observed at about 600 nm, the temperature effects is examined and the origin of the PL process is discussed via X-ray photoelectron spectra.     

The application of Raman and anti-stokes Raman spectroscopy for in situ monitoring of structural changes in laser irradiated titanium dioxide materials

The use of Raman and anti-stokes Raman spectroscopy to investigate the effect of exposure to high power laser radiation on the crystalline phases of TiO₂ has been investigated. Measurement of the changes, over several time integrals, in the Raman and anti-stokes Raman of TiO₂ spectra with exposure to laser radiation is reported. Raman and anti-stokes Raman provide detail on both the structure and the kinetic process of changes in crystalline phases in the titania material. The effect of laser exposure resulted in the generation of increasing amounts of the rutile crystalline phase from the anatase crystalline phase during exposure. The Raman spectra displayed bands at 144 cm⁻¹ (A1g), 197 cm⁻¹ (Eg), 398 cm⁻¹ (B1g), 515 cm⁻¹ (A1g), and 640 cm⁻¹ (Eg) assigned to anatase which were replaced by bands at 143 cm⁻¹ (B1g), 235 cm⁻¹ (2 phonon process), 448 cm⁻¹ (Eg) and 612 cm⁻¹ (A1g) which were assigned to rutile. This indicated that laser irradiation of TiO₂ changes the crystalline phase from anatase to rutile. Raman and anti-stokes Raman are highly sensitive to the crystalline forms of TiO₂ and allow characterisation of the effect of laser irradiation upon TiO₂. This technique would also be applicable as an in situ method for monitoring changes during the laser irradiation process.     

Raman spectroscopy of a-C:H:N films deposited using ECR-CVD with mixed gas

Ultraviolet (UV) and visible Raman spectroscopy were used to study a-C:H:N films deposited using ECR-CVD with a mixed gas of CH₄ and N₂. Small percentage of nitrogen from 0 to 15% is selected. Raman spectra show that CN bonds can be directly observed at 2220 cm⁻¹ from the spectra of visible and UV Raman. UV Raman enhances the sp¹ CN peak than visible Raman. In addition, the UV Raman spectra can reveal the presence of the sp³ sites. For a direct correlation of the Raman parameter with the N content, we introduced the G peak dispersion by combining the visible and UV Raman. The G peak dispersion is directly relative to the disorder of the sp² sites. It shows the a-C:H:N films with higher N content will induce more ordered sp² sites. In addition, upper shift of T position at 244 nm excitation with the high N content shows the increment of sp² fraction of films. That means the films with high N content will become soft and contain less internal stress. Hardness test of films also confirmed that more N content is with less hardness.     

The analysis of the error statistics in a 5 × 40 Gbit/s fibre link with hybrid amplification

We quantify the error statistics and patterning effects in a 5 × 40 Gbit/s WDM RZ-OOK SMF/DCF fibre link using hybrid Raman/EDFA amplification. By extensive use of a numerical model, we determine how the error statistics change with the transmission distance. This knowledge is used as a basis for a constrained coding technique in order to improve the transmission error rate. We propose an adaptive constrained code for mitigation of the patterning effects and demonstrate that this approach can substantially reduce the bit error rate (BER) even for very large values of the channel BER (BER > 10^− 1). The proposed technique can be used in combination with forward error correction schemes (FEC) to extend the range of channel BERs that an FEC scheme is effective over.     

Raman active modes of NiSi crystal

Raman scattering intensities of the NiSi Raman-active modes have been calculated with three Raman measurement configurations, which can be used for the symmetry assignment of the NiSi Raman peaks. Raman-active vibrations of the NiSi crystal have also been theoretically studied. Results show that the lattices with A_g and B_2g modes vibrate only in the plane normal to the NiSi[0 1 0] direction while the lattices with B_1g and B_3g modes vibrate only along the NiSi[0 1 0] axis. Based on such study, the relationship between the anisotropic strain distribution in the NiSi thin film and the Raman peak shifts has been briefly discussed.     

Influence of vapor transport equilibration on Raman spectra of Er:LiNbO3 crystals

Raman spectra of as-grown and vapor transport equilibration (VTE) treated Er:LiNbO₃ crystals, which have different cut orientations (X-cut and Z-cut), different Er-doping levels (Er:(0.2, 0.4 and 2.0 mol%)LiNbO₃) and different VTE durations (80, 120, 150 and 180 h), were recorded at room temperature in the wavenumber range 50-1000 cm⁻¹ by using backward scattering geometry. The spectra were attributed on the basis of their spectral features and the previous experimental work and the most recent theoretical progress in lattice dynamics on pure LiNbO₃. In comparison with the pure crystal the most remarkable effect of Er-doping on the Raman spectrum is observed for the E(TO₉) mode. It does not appear at 610 cm⁻¹ as the pure crystal, but locates at 633 cm⁻¹. In addition, the doping also results in the lowering of the Raman phonon frequency, the broadening of the Raman linewidth and the changes of the relative Raman intensity of some peaks. The VTE treatment results in the narrowing of the linewidth, the recovery of the lowered phonon frequency and the further changes of relative Raman intensity. The narrowing of Raman linewidth indicates that the VTE processing has brought these crystals closer to stoichiometric composition. The VTE treatment has induced the formation of a precipitate ErNbO₄ in the high-doped Er(2.0%):LiNbO₃ crystals whether X- or Z-cut. For these precipitated crystals, besides above linewidth and phonon frequency features, they also display more significant Raman intensity changes compared with those not precipitated crystals. In addition, a slight mixing between A₁(TO) and E(TO) spectra is also observed for these precipitated crystals. Above doping and VTE effects on Raman spectra were quantitatively or qualitatively correlated with the characteristics of the crystal structure and phonon vibrational system.     

Simulative analysis of pre- and post-compensation using CRZ format in WDM optical transmission link

This paper reports the effects of pre- and post-compensation using CRZ modulation format in long-haul WDM optical transmission link using wavelengths in three bandwidths viz. 1537.4; 1550; 1562.6 nm at per channel bit rates of 10 Gbit/s. It has been investigated here that optimization of dispersion map results in improved management of nonlinear effects in long-haul light wave systems operating in the quasi-linear regime. In addition, pre- and post-dispersion compensation was applied at the transmitter and receiver depending on the signal wavelength, which resulted in improvement of performance metrics viz. Q² (dB), BER and OSNR over longer transmission distances. It is reported here that optimum values of Q² dB of 17.1 dB, BER of 8.4933e⁻⁰¹⁵ and OSNR of 30.1 dB are obtained at 1550 nm at a transmission distance of 7360 km with pre- and post-compensation using CRZ modulation format.     

Raman study of BiFeO3 with different excitation wavelengths

Raman spectra of bismuth ferrite (BiFeO₃) over the frequency range of 100-1500 cm⁻¹ have been systematically investigated with different excitation wavelengths. The intensities of the two-phonon modes are enhanced obviously under the excitation of 532 nm wavelength. This is attributed to the resonant behavior when incident laser energy closes to the intrinsic bandgap of BiFeO₃. The Raman spectra of BiFeO₃ excited at 532 nm were measured over the temperature range from 77 to 678 K. Besides the abnormal changes of the peak position and the linewidth of the A₁ mode at 139 cm⁻¹, the prominent frequency shift, the line broadening and the decrease of the intensity for the two-phonon mode at 1250 cm⁻¹ were observed as the temperature increased to Néel temperature (T_N). All these results indicate the existence of strong spin-phonon coupling in BiFeO₃.     

Characterization of diamond-like carbon films by SEM, XRD and Raman spectroscopy

Diamond-like carbon films were deposited by electrolysis of a water-ethanol solution on Cu at low voltages (60-100 V) at 2 mm interelectrode separation. The films were characterized by scanning electron microscopy (SEM), X-ray diffractometer (XRD) and Raman spectroscopy. The films were found to be continuous and compact with uniform grain distribution. Raman spectroscopy analysis revealed two broad bands at ∼1350 and ∼1580 cm⁻¹. The downshift of the G band of graphite is indicative of the presence of DLC. For XRD analysis, the three strong peaks located at 2θ values of 43.2°, 74.06° and 89.9° can be identified with reflections form (1 1 1), (2 2 0) and (3 1 1) plane of diamond.     

Multi parameter optimization of Raman Fiber Amplifier using genetic algorithm for S band dense wavelength division multiplexed system

A simple genetic algorithm is implemented to perform multi parameter optimization of Raman Fiber Amplifier for 100 channel S band dense wavelength division multiplexed system at 25 GHz interval. A cost effective system using single Raman pump is investigated aiming at maximum average gain. The single counter propagating pump is optimized to frequency of 211.528 THz and 652.93 mW power level with optimum Raman fiber length of 44.064 Km. There is evidence to show that the optimum solution presents a small gain variation (less than 3 dB) over an effective bandwidth covering 197–199.475 THz. The optimized configuration enabled an adequate system performance in terms of acceptable Q-factor (19.52 dB) and BER (1.46 × 10⁻²¹).     

Analysis of Raman scattering of Ga1−xMnxAs dilute magnetic semiconductor

Ferromagnetic Ga_1−xMn_xAs layers (where x=1.4-3.0%) grown on (1 0 0) GaAs substrates by molecular beam epitaxy were characterized using Raman spectroscopy. As Mn is introduced into GaAs, a marked increase in disorder in the material occurs, as indicated by the growth of the disorder-allowed transverse-optical Raman line. Another important result is that as the Mn concentration in Ga_1−xMn_xAs increases further beyond ca. 2%, Raman-active coupled-plasmon-longitudinal-optical phonon modes arise, which signals the increasing presence of holes, and thus provides a useful tool for determining their concentration. Using the depletion-layer approach from the Raman spectroscopy data, we determined the carrier concentration for samples with x=2.2% and 3.0% was to be 7.2×10¹⁹ and 8.3×10²⁰ cm⁻³, respectively.     

Optimization of a Raman/EDFA hybrid amplifier based on dual-order stimulated Raman scattering using a single-pump

Based on dual-order stimulated Raman scattering (SRS) of a single 1395 nm Raman fiber laser in 75 km single mode fiber and its corresponding dispersion compensation module, a hybrid Raman/Erbium doped fiber amplifier (EDFA) for long wavelength band (L-band) amplification is realized by inserting a segment of EDF within the span. By comparing the performance of gain and noise in four hybrid amplifiers with different span configurations, we find that the distribution of the secondary L-band amplification obtained from the EDF along the link has a great influence on the performance of the hybrid amplifier. Both gain and noise performance of hybrid amplifier can be improved significantly by optimizing the location of the EDF. Moreover, we can extend the flat gain bandwidth from L-band to central wavelength band (C-band) plus L-band by recycling the residual first-order SRS to pump a segment of EDF with proper length.     

Modeling and experimental investigation of short pulse Raman microchip laser

The results of experimental and theoretical investigations of passive Q-switch Raman microchip lasers based on Nd³⁺:LSB active medium and Ba(NO₃)₂ Raman crystal are presented. It has been demonstrated that intracavity Raman conversion in the microchip lasers is a simple and efficient method, capable of delivering high power pulses with sub-100 ps duration. Intracavity generation of the 1st Stokes pulses with duration from 180 down to 48 ps and a peak power of 48 kW has been performed and studied. High peak power and short duration of the 1st Stokes pulses in microchip laser with Ba(NO₃)₂ Raman crystal allows to easily perform extracavity harmonic generation and frequency sum mixing in LBO, BBO, and KTP crystals with discrete-tunable wavelength from ∼1200 down to ∼240 nm. We have developed a generalized model of Q-switched Raman microchip lasers, that takes into account spatial inhomogeneity of pump, laser, and Stokes beams, thermalization within the upper and lower multiplets of activator ions in laser medium, and saturable absorber bleaching and recovery. For the microchip lasers with different saturable absorbers, the model achieves very good agreement with the presented experimental results in a wide range of pump powers.     

Simulation analysis of crosstalk among channels with fiber Raman amplifiers at 10 Gb/s

We have investigated the effects of crosstalk in fiber Raman amplifiers (FRAs) by propagating signals through the Raman fiber. We have observed that quality factor reduces for lesser channel spacing. We have able to propagate the signals in two channels with spacing of 20 GHz and quality factor above 25 dB was obtained. The effect of signal input power and injected pump power on crosstalk and signal interference ratio (SIR) has analyzed. It is observed that the signal gain and the injected pump power should be limited to the value well below the threshold of Raman amplification to ensure small crosstalk and high SIR. The effect of Raman fiber length on crosstalk is also studied and it is observed that for high values of Raman fiber length, SIR reduces considerably.