聚合物和小分子叠层结构有机太阳电池研究

旋涂法和真空蒸发结合制备了MEH-PPV:PCBM体异质结和CuPc/C60有机小分子叠层有机太阳电池. 测试结果表明:MEH-PPV:PCBM有源层和Ag中间层分别为50 nm和0.5 nm时,与同等厚度有源层的MEH-PPV:PCBM体异质结器件和CuPc/C60小分子器件相比,叠层器件太阳能转换效率大大提高,达到了1.86%. 关键词： 聚(2-甲氧基,5-(2-乙基-乙氧基)-对苯乙炔) 铜酞菁 叠层结构 太阳电池     

Micromorph tandem solar cells: optimization of the microcrystalline silicon bottom cell in a single chamber system

We report on the development of single chamber deposition of microcrystalline and micromorph tandem solar cells directly onto low-cost glass substrates. The cells have pin single-junction or pin/pin double-junction structures on glass substrates coated with a transparent conductive oxide layer such as SnO₂ or ZnO. By controlling boron and phosphorus contaminations, a single-junction microcrystalline silicon cell with a conversion efficiency of 7.47% is achieved with an i-layer thickness of 1.2 μm. In tandem devices, by thickness optimization of the microcrystalline silicon bottom solar cell, we obtained an initial conversion efficiency of 9.91% with an aluminum (Al) back reflector without a dielectric layer. In order to enhance the performance of the tandem solar cells, an improved light trapping structure with a ZnO/Al back reflector is used. As a result, a tandem solar cell with 11.04% of initial conversion efficiency has been obtained.     

Studies on the polycrystalline silicon/SiO_2 stack as front surface field for IBC solar cells by two-dimensional simulations

Interdigitated back contact(IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.     

小分子叠层有机太阳能电池的界面层优化

为了提高双结叠层有机太阳能电池(OSCs)的性能,我们对有机小分子叠层OSCs的中间层(IL)、阴极界面层(CL)和活性层进行了优化。首先,研究不同低功函数的金属纳米粒子(Mg、Ag、Al和Ca)作为IL对叠层OSCs性能的影响,得到了最优的IL材料为0.1 nm厚的金属Al,使得叠层OSCs的PCE提升了50.9%。其次,研究了不同低功函数金属(Mg、Al和Ca)作为CL对叠层OSCs性能的影响,并得到了最优的CL金属材料为Mg,与Al作为CL的叠层OSCs对比,采用Mg作为CL的器件PCE提升了20.7%。最后采用窄带隙材料DTDCTB取代中带隙材料boron subphthalocyanine chloride(SubPc)作为后子电池的活性层,与仅采用SubPc的叠层OSCs相比,PCE提升了30.2%。当前后子电池均采用体异质结结构后,最终叠层OSCs的PCE达到了4.04%,与最初未优化前OSCs的PCE(2.1%)相比,最优OSCs的PCE提升了92.4%。     

Investigations of aluminum films with synchrotron radiation of wavelengths 500 to 1000 Å

Measurements of the photocurrent from thin Al cathodes in a windowless electron multiplier as a function of wavelength, polarization, angle of incidence, and film thickness have been carried out in the extreme vacuum ultraviolet. A normal incidence monochromator utilizing synchrotron radiation provided highly polarized light. A marked difference is found between the photocurrent measured during irradiation of thin films with “s” and “p” polarized light at wavelengths near the Al plasma wavelength (835 Å). For films thicker than about 500 Å pronounced interference effects are found in both “p” and “s” light at wavelengths less than the plasma wavelength. The observations can be explained by assuming the photocurrent is related to the photon density (electromagnetic energy density) in the photocathode. Calculations of the energy density in films irradiated with light give the structure found in the measured photocurrent. The measurements indicate our monochromator yields light with a degree of polarization consistent with the calculated polarization of the synchrotron radiation incident upon our grating (about 85%).     

肖特基钙钛矿太阳电池结构设计与优化

有机-无机杂化钙钛矿材料有高吸收系数、低廉的制作成本以及较为简单的制备工艺,在近年来表现出良好的发展前景.本文采用wx-AMPS模拟软件对平面结构钙钛矿太阳电池和肖特基钙钛矿太阳电池进行建模仿真对比,从理论上分析无载流子传输层的肖特基钙钛矿太阳电池的优势.结果显示,器件两侧电极功函数和吸收层的能带分布是提高太阳电池效率的关键.在对电极使用Au(功函数为5.1 eV)的前提下,透明导电电极功函数为3.8 eV,可以得到肖特基钙钛矿太阳电池转换效率为17.93%.对器件模型吸收层进行优化,通过寻找合适的掺杂浓度,抑制缺陷密度,确定合适的厚度,可以获得理想的转换效率(20.01%),是平面异质结结构(理论转换效率31%)的63.84%.肖特基钙钛矿太阳电池在简单的器件结构下可以获得优异的光电性能,具有较好的应用潜力.     

前后光栅周期对于双光栅结构薄膜太阳能电池光俘获效应的影响

本文用时域有限差分法对硅层等效厚度为100 nm的具有不同前后光栅周期的介质/金属双光栅结构薄膜太阳能电池进行了模拟分析,比较了三角形最佳相同与不同周期光栅结构的吸收光谱特性,分析了光栅高度、填充比、硅吸收层厚度对最佳相同和不同周期光栅结构光吸收特性的影响,以及相应结构中导致光吸收增强的共振模式.结果表明前后光栅周期为1:1的共形双光栅结构中存在光泄漏现象,偏离1:1后的光栅结构可有效地抑制低级次衍射光的泄漏,前光栅周期小于后光栅周期的结构光吸收性能的提高来自于平面波导模式在吸收层中的有效激发和传播,而前光栅周期大于后光栅周期的结构光吸收性能的提高则来自于后光栅界面上所激发的等离子体极化模式.在较厚的硅吸收层厚度,前后光栅周期比为1:2和1:3的电池结构也会出现光泄漏现象,从而使具有最大光吸收效率的结构偏离这些周期比结构的位置.     

Performance assessment of Cu2SnS3 (CTS) based thin film solar cells by AMPS-1D

A relative performance assessment of copper tin sulfide (CTS) thin film solar cells with different phases such as, cubic, tetragonal, and orthorhombic as an absorber layer has been carried out by AMPS-1D simulation software. Based on the proposed device architecture, the effects of thickness and carrier concentration for the absorber layer as well as the back metal contact with various work function are studied in order to improve the performance of CTS solar cell. It is found that 10¹⁸ cm⁻³ and 2500–3000 nm are optimum values for carrier concentration and thickness for all the investigated CTS absorber layer phases, respectively. On the other hand, back contact metal work function of 5.28 eV, 5.67 eV and 5.71 eV are identified to be the optimal values for cubic, tetragonal, and orthorhombic phases, respectively. We have analyzed in detail the output performance of CTS thin film solar cell with respect to its fabrication, which can serve a constructive research pathway for the thin film photovoltaic industry.     

Analysis (Simulation) of Ni-63 beta-voltaic cells based on silicon solar cells

Beta-voltaic cells based on standard silicon solar cells with bilateral coating with beta-radiation sources in the form of ⁶³Ni isotope have been studied experimentally and by numerical simulation. The optimal parameters of the cell, including its thickness, the doping level of the substrate, the depth of the p–n junction on its front side, and the p⁺ layer on the back side, as well as the activity of the source material, have been calculated. The limiting theoretical values of the open-circuit voltage (0.26 V), short-circuiting current (2.1 μA), the output power of the cell (0.39 μW), and the efficiency of the conversion of the radioactive energy onto the electric energy (4.8%) have been determined for a beta-source activity of 40 mCi. The results of numerical analysis have been compared with the experimental data.     

Two-color cross-correlation of fs-laser pulses by two-photon induced photoconductivity for near and far field optical measurements

Two-color two-photon induced photoconductivity in a GaAsP diffusion type photodiode is demonstrated by measuring femtosecond cross-correlation functions for widely separated wavelength pairs of 775 and 1300 nm. Results are obtained for a range of tunable wavelengths and average powers of the incident lasers by measuring the two-photon induced photocurrent as a function of the optical delay between the pulses. The temporal autocorrelation of femtosecond laser pulses in the near-field of a small diameter aluminum coated optical fiber tip is also obtained with the same photodiode method for single colors.     

Intensity-dependent photocurrent generation at the anode in bulk-heterojunction solar cells

The efficiency that a solar cell can reach is ultimately limited by the number of photons absorbed in its active layer and the efficiency with which these photons are converted into electrical current. In this study we seek to quantify and separate the optical and electrical efficiencies in photovoltaic devices based on mixtures of [6,6]-phenyl C61-butyric acid methyl ester (PCBM) and regio-regular poly(3-hexylthiophene) (P3HT). The optical efficiency is determined by comparing the measured external quantum efficiency (EQE) and the maximum possible EQE (EQEmax) as determined by modeling the fractional dissipation of light in the active layer at a given wavelength and layer thickness (d_active). We determine, by examining the difference between EQE and EQEmax, that a significant contribution (up to 35%) of the total losses are electrical in nature. Comparison of the internal quantum efficiency (IQE) and the optical intensity distribution as a function of d_active shows photocurrent generation is anti-correlated to light intensity in the vicinity of the PEDOT:PSS/active layer interface. The magnitude of this effect is modeled using standard optical tools and a half Gaussian shaped reduced generation zone (RGZ) centered at this interface. Illumination-intensity (I₀) dependent measurements of the short-circuit-current density allows us to exclude vertical segregation and bi-molecular recombination as potential explanations for the RGZ. Examination of the work functions of P3HT and PEDOT:PSS gives evidence that in the devices positive charges build up at the interface due to permanent redox chemistry, leading to the formation of a dipolar layer with holes on the P3HT. The dependence of EQE on I₀ at low illumination intensities gives evidence for correlation of the charge build up and the size change of the reduced generation zone. We argue that the only physical phenomenon that explains a region-specific reduction in photocurrent generation and is consistent with a build up of positive charge at the interface is a reduced probability of exciton separation or quenching. In support of our findings, we show that reduction of the light intensity yields increased quantum efficiency consistent with our model. PACS  42.25.bs; 72.40.tw; 72.80.le     

Optimization of a distributed feedback dye laser system to generate single tunable picosecond pulses from UV to IR

We report a new configuration of a picosecond distributed feedback dye laser system, which can be pumped by various wavelengths. The optical characteristics of the system are presented. By using a triangle mirror functioned beam splitter and a right-angle prism attached to the front face of the cell in the pumping geometry, continuously and widely tunable laser wavelengths have been obtained for a range of more than 100 nm. A quenching mirror adhered to a face on the side of the cell, functioning as a high-Q cavity shared common gain medium, has been employed to observe single short laser pulses with transform-limited bandwidth.     

Infrared and millimeter wave absorber structures for thermal detectors

In a classical (i.e. Type I) pyroelectric detector, a crystal plate is coated with two metal electrodes. In order to achieve an absorbing power as close as possible to 100%, different structures have been used in the past: (i) a metal-black coating on the front electrode and (ii) a very thin front electrode having a square resistance matching the impedance of vacuum, with the back electrode making a quarter wavelength structure. However, the quarter wavelength structure becomes inefficient when the absorption length becomes smaller than the plate thickness.The simpler solution is to use a transparent antireflective layer, so that the whole radiant energy would enter the pyroelectric plate and be absorbed. This can be a perfect solution when the double path through the layer matches the phase shift on reflection at the pyroelectric material, and a nearly perfect one for a broad band centered at that wavelength. Transformation of radiant power into heat occurs directly within the pyroelectric. It is shown that a number of semiconductors can be used to make such antireflective layers, and practical solutions are feasible for many pyroelectrics. The advantages of this simple solution over λ/4 structures stuck to the pyroelectric plate, as proposed by Parsons et al., are a negligible added heat capacity as the antireflective coating can generally have enough electrical conductivity to be used as an electrode, and a negligible lateral heat conductivity.When such a solution is not feasible (i.e. reflectivity cannot be cancelled completely), we can still use a very thin metal electrode. It is shown that the electrical conductivity may be 2 orders of magnitude smaller than for the bulk. This leads to small indexes in the IR (e.g. n₃≅k₃≅ 6), very convenient to give the structure a null reflectivity, when the granular metal layer is covered by a suitable, experimentally available coating (index of refraction n₂ = √2n₃.Additionally, the determination of the wavelengths and values of the absorption maxima give useful information on the complex refractive index of the coated crystal at wavelengths where reflectivity and transmission measurements are often inaccurate or impossible (T0̃).     

Bias sensitive spectral sensitivity in double -SiC:H pin structures

In this work we discuss the use of multilayer stacked structures (p(SiC:H)/i(SiC:H)/n(SiC:H)/p(SiC:H)/i(Si:H)/n(Si:H)) sandwiched between two transparent conductive contacts as colour sensing devices. The thickness and the absorption coefficient of both front and back p–i–n cells were specifically designed in order to achieve simultaneously high blue collection and red transmittance in the front cell and full green absorption and high red collection in the back cell. Electric and optical sensing methods were used for measuring the current–voltage characteristics and the spectral sensitivity, under different experimental conditions. Results show that the spectral sensitivity of the device is strongly modulated by the applied voltage, which allows colour selectivity. The results were supported by a physical model.     

多色分图层激光扫描自聚焦投影技术

为了突破常规激光投影仪由于单一波长的局限性造成应用场景的限制,同时实现对不同零件、不同材料、不同装配工艺的分图层投影,设计并搭建了多色分图层激光扫描自聚焦投影系统。系统采用2种波长的激光作为光源,根据二向色镜的位置不同,提出了多色共光轴和分光路2种激光扫描自聚焦投影方案,并推导了相应的光学系统数学模型。通过系统的自聚焦功能调节镜组间距,均可以实现在不同距离的投影面上聚焦出不同颜色的最小光斑。利用ZEMAX光学设计软件对2种投影光学系统进行仿真,并从系统可靠性和投影效果上对2种系统进行比较分析。实验结果表明：在3 m处的投影面上,共光轴系统各种波长的光斑直径均在0.8 mm以内,且光斑大小均匀,可以实现多色分图层的扫描自聚焦投影功能。     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

Current-voltage characteristics simulation and analysis of 4H-SiC metal-semiconductor-metal ultraviolet photodetectors

The current-voltage (I-V) characteristics of 4H-SiC metal-semiconductor-metal (MSM) ultraviolet pho-todetector with different finger widths and spacings, different carrier concentrations and thicknesses of n-type epitaxial layer are simulated. The simulation results indicate that the dark current and the pho-tocurrent both increase when the finger width increases. But the effect of finger width on the dark current is more significant. On the other hand, the effect of finger spacing on the photocurrent is more significant. When the finger spacing increases, the photocurrent decreases and the dark current is almost changeless. In addition, it is found that the smaller the carrier concentration of n-type epitaxial layer is, the smaller the dark current and the larger the photocurrent wiU be. It is also found that I-V characteristics of MSM detector also depend on the epitaxial layer thickness. The dark current of detector is smaller and the photocurrent is larger when the epitaxial layer thickness is about 3 μm.     

Computational analysis of the effect of the surface defect layer (SDL) properties on Cu(In,Ga)Se2-based solar cell performances

In this article, the performances of Cu(In,Ga)Se₂ (CIGS) solar cells have been modelled and numerically simulated using the one-dimensional simulation program Solar Cell Capacitance Simulator in 1 Dimension (SCAPS-1D), and a detailed analysis of the effect of surface defect layer (SDL) thickness, band gap and carrier mobility with Fermi level pinning is presented. Furthermore, donor-type defect state density in the SDL has been investigated, and their effect on device performances has been presented. Based on the simulation results, optimal properties of the SDL for the CIGS solar cell are proposed. The simulated results show that the optimal thickness of the SDL to optimise the solar cells is in the range of 100–200 nm. The increase in the band gap of the SDL >1.3 eV improves the device performance by enhancing the open-circuit voltage (V_oc), fill factor (FF) and conversion efficiency due to the larger quasi-Fermi energy-level splitting, and optimal band offset between the SDL and the buffer layer (CdS). The simulation results suggest that the SDL defect density as well as carrier mobilities are the critical parameters for the limitation of the performances for the CIGS solar cells. All these results show that the SDL plays an important role in designing high-efficiency and high-performance CIGS-based solar cells.     

Observation of the surface circular photogalvanic effect in InN films

A sizable spin-dependent photocurrent related to the interband transition in InN films is observed. The surface charge accumulation layer is suggested to be the origin of the circular photogalvanic current, which is consistent with the result of uniaxial strain experiments and the comparison of front and back incidence. The homogeneous photocurrent demonstrates the existence of spin splitting in the InN surface layer, and the structure inversion asymmetry (SIA)-dominant mechanism indicates a great possibility for the manipulation of spin splitting, which would undoubtedly benefit further research and applications of spintronics.     

Influence of oxidation time on semiconductive behaviour of thermally grown oxide films on AISI 304L

The oxide films formed on AISI 304L stainless steel at 300 °C in the oxidation time range between 2 and 4 h have been studied by photoelectrochemistry. Photocurrents were investigated as a function of the wavelength of the incident light and the electrode potential. The investigation allowed the determination of the semiconductive properties of the oxides. The oxide films showed n-type behaviour. A duplex structure of the oxide films has been suggested on the basis of the photocurrent spectra, with an internal oxide layer having an optical gap (E_g2 = 2.16-2.3 eV) depending on the applied potential and oxidation time, higher to that of the external oxide layer (E_g1 ≈ 1.9 eV). Significant variations in the amplitude of the photocurrent were detected as a function of the applied potential and the oxidation time.