Co基磁性隧道结势垒结构的电子全息研究

利用高分辨电子显微术和电子全息方法研究了Co基磁性隧道结退火热处理前后的微观结构及相应势垒层结构的变化. 研究结果表明，退火处理可以明显地改善势垒层和顶电极、底电极之间的界面质量，改进势垒层本身的结构. 这与该磁性隧道结经过280℃退火处理后，隧道磁电阻值大大增加是一致的. 关键词： 磁性隧道结 隧道磁电阻 高分辨电子显微学 电子全息     

利用金属掩模法制备钉扎型磁性隧道结

利用金属掩模法和Ir22Mn78合金反铁磁钉扎层，制备了四种钉扎型的Py/Al2O3/Py，Py/Al2O3/Co，Co/Al2O3/Py和Co/Al2O3/Co磁性隧道结，坡莫合金的成分为Py＝Ni79Fe21.例如：利用狭缝宽度为100?μm的金属掩模，直接制备出室温隧穿磁电阻比值为17.2%的磁性隧道结Co/Al2O3/Co，其结电阻为76Ω,结电阻和结面积的积矢为76×10_{4Ωμm2，自由层的偏转场为1114?A/m，并且在外加磁场0.1114A·m-1之间时室温磁电阻比值 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 金属掩模}     

Structural and magnetic properties of ion-beam deposited NiFe/Co-oxide bilayers

The structural and magnetic properties of NiFe/Co-oxide bilayers were studied. XRD investigation indicates the NiFe (Permalloy) layers (a= 3.53 Å) grow with a (111) preferred orientation. The Co-oxide layers were fabricated with oxygen content in the deposition assist beam ranging from 8% (rock-salt CoO, a= 4.27 Å) to 34% (spinel Co3O4, a= 8.21 Å). Both the coercivity Hc and exchange bias field Hex closely follow an inverse NiFe thickness relationship. A strong temperature dependence of Hc and Hex is found in these NiFe/Co-oxide bilayers. At T= 289 K, the NiFe/CoO film exhibits an enhanced Hc relative to pure NiFe/Co or NiFe/Co3O4 bilayers, an indication of exchange coupling between the NiFe and CoO phases. At T= 10 K, the NiFe/Co3O4 film exhibits an exchange-bias loop shift of Hex∼- 200 Oe that persists to temperatures greater than 30 K (the Néel temperature of bulk Co3O4). The transition temperature of the Co3O4 film component has increased above the bulk value via exchange coupling with the permalloy. Results indicate that the exchange coupling interaction between FM and AFM layers are responsible for both enhanced coercivity and cross-tie domains.     

Influence of layer thickness on the structure and the magnetic properties of Co/Pd epitaxial multilayer films

Co/Pd epitaxial multilayer films were prepared on Pd(111)_fcc underlayers hetero-epitaxially grown on MgO(111)_B1 single-crystal substrates at room temperature by ultra-high vacuum RF magnetron sputtering. In-situ reflection high energy electron diffraction shows that the in-plane lattice spacing of Co on Pd layer gradually decreases with increasing the Co layer thickness, whereas that of Pd on Co layer remains unchanged during the Pd layer formation. The CoPd alloy phase formation is observed around the Co/Pd interface. The atomic mixing is enhanced for thinner Co and Pd layers in multilayer structure. With decreasing the Co and the Pd layer thicknesses and increasing the repetition number of Co/Pd multilayer film, stronger perpendicular magnetic anisotropy is observed. The relationships between the film structure and the magnetic properties are discussed.     

Enhancement of magnetic properties of Co/Pd multilayered perpendicular magnetic recording media by using Pd/Si dual seedlayer

Effects of the introduction of a Pd/Si dual seedlayer on the microcrystalline structure and magnetic properties of [Co/Pd]_n multilayered perpendicular magnetic recording media were investigated. The Pd/Si dual seedlayer was composed of a Pd upper seedlayer and a Si under seedlayer. The Pd upper seedlayer with a thickness of up to 10 nm markedly increased the coercivity of [Co/Pd]_n multilayered media in the direction perpendicular to the film surface. The highest coercivity of 7.8 kOe was obtained for the [Co/Pd]₁₀ medium with a Pd (10 nm)/Si (100 nm) dual seedlayer. The Pd upper seedlayer not only facilitated the formation of regular interfaces between the Co and Pd layers, but also reduced the thickness of the deteriorated initial layer in the [Co/Pd]_n multilayer, resulting in enhancement of the magnetic anisotropy field. The [Co/Pd]_n multilayered medium with the Pd/Si dual seedlayer exhibited weak intergranular exchange coupling between [Co/Pd]_n grains, which led to excellent read–write characteristics.     

Geometric and magnetic properties of Co/Pd system

We measured geometric and magnetic properties of Co films on the Pd(1 1 1) surface by X-ray photoelectron diffraction (XPD), X-ray magnetic circular dichroism (MCD) at the Co L_2,3 edge, and the surface magneto-optical Kerr effect (SMOKE) measurements. Co thin films are found to grow incoherently with fcc island structure on the smooth Pd(1 1 1) substrate. Comparison of MCD and SMOKE measurements of Co thin films grown on rough and smooth Pd(1 1 1) surfaces suggests that perpendicular remnant magnetization and Co orbital moment are enhanced by the rough interface. Pd capping layer also induces perpendicular orbital moment enhancement. These observations indicate the influence of hybridization between Co 3d and Pd 4d at the interface on the magnetic anisotropy.     

在Pd/Cu(100)表面上外延的超薄Co膜的结构和磁性

利用脉冲激光溅射(PLD)和分子束外延(MBE)方法制备了超薄膜系统 Co/Pd/Cu(100).脉冲激 光溅射生长的单原子Pd层呈现了很好的二维生长模式.在这个Pd表面上，分子束外延生长的C o层直至12个原子层都表现了层-层生长模式.利用俄歇电子谱(AES)和低能电子衍射(LEED)研 究了该系统的表面结构.利用低温磁光克效应(MOKE)研究了系统的磁学性质.结构研究表明， Co层由于面内晶格失配应力而具有一个四方正交结构；与对比样品Co/Cu(100)的比较研究说 明Pd层的存在强烈地改善了Co膜的起始生长模式和结构.磁光克效应测量表明，Pd层的存在 改变了Co层的磁学性质. 关键词： 薄膜的磁性质 组织与形貌 界面磁性     

Non-equilibrium Green's function approach to the quasiparticle transport and magnetoresistance in hybrid magnetic tunnel junctions

A generalized approach to study quasiparticle transport across hybrid magnetic tunnel junctions (MTJs) is formulated using the non-equilibrium Green's function technique. This formalism allows for arbitrary thicknesses of the electrodes and the central scattering region comprising of materials with multiple electronic bands, and incorporates the many body interactions present in the electrode regions. While the method can be used to study the transport characteristics of various types of MTJs, we have used it to study the tunneling characteristics and magnetoresistance (MR) of MTJs in which s-f interaction is present at the electrode layers. It is also used to study the transport characteristics of MTJs with hybrid electrodes and double barrier. The magnetic correlation present in the electrodes is found to strongly influence the TMR. Eventhough the magnetic correlation in general suppress the TMR, the TMR is found to be enhanced strongly for certain band occupations of the electrodes. We observe a fall of TMR with increase in the number of layers in the insulating region. Band occupation of the metallic layer present at the middle of the insulating layers in the double barrier MTJ is found to be important in deciding its tunnel characteristics. Origin of the different types of behavior of TMR is analyzed in terms of the spin-dependent tunnel currents.     

Structural,magnetic, and electrical properties of thin film Pd/Co layered structures

We report on properties of layered coherent structures of Pd and Co, prepared by RF sputtering. X-ray diffraction analysis characterizes these films as having a well-ordered periodic structure (periods λ in the range 10A < λ < 80A) of stacked (111) planes of fcc Co and Pd. Room temperature magnetic properties were measured with a vibrating sample magnetometer. All films are ferromagnetic, with a magnetic moment in excess of that attributable to Co. This excess, which increases as λ decreases, is interpreted as induced ferromagnetism in the Pd layers. The in-plane magnetization is harder for smaller values of λ and appears to depend mainly on the thickness of the Co layers. The in-plane electrical resistivity was measured in the range 2K–300K by a four-electrode method. Below 40K, the resistivity is dominated by residual resistivity; above this temperature, its rise is attributed mainly to the resistivities of bulk Pd and Co. The λ-dependence of the resistivity is described by a model of interfacial scattering of electrons. Evidence for the presence of coherency strains at small λ is present in the x-ray data, the magnetization behavior, as well as in the interfacial scattering mechanism deduced from the analysis of the resistivity.     

MgO单晶势垒磁性隧道结的第一性原理计算和实验研究

在MgO单晶势垒磁性隧道结中发现的室温高隧穿磁电阻现象,是近些年自旋电子学以及磁性隧道结磁电阻材料研究中的又一重大突破.本文主要评述和介绍2001年以来MgO单晶势垒磁性隧道结第一性原理计算和实验上的重要进展,以及介绍利用Layer-KKR第一性原理计算方法研究的Fe(001)/MgO/Fe、Fe(001)/FeO/MgO/Fe、Fe(001)/Mg/MgO/Fe、Fe(001)/Co/MgO/Co/Fe和Fe(001)[MgO/Fe/MgO/Fe等基于单晶MgO(001)单势垒及双势垒磁性隧道结材料的电子结构和自旋相关输运性质研究的最新进展.这些第一性原理定量计算的结果,不仅从物理上增强了对MgO单晶势垒磁性隧道结的电子结构和自旋相关输运特性的了解,而且对于研究新型室温磁电阻隧道结材料及其在自旋电子学器件中的广泛应用,具有一定的参考价值.     

Oxidation process of Mg films by using high-concentration ozone for magnetic tunnel junctions

Ozone oxidization process of metal Mg film for the barrier formation in magnetic tunnel junctions (MTJs) is investigated. Ozone exposure method is expected to oxidize ultra-thin metal films more mildly than with the plasma oxidization method, since the energy level of atomic oxygen is ∼2 eV lower in the ozone method than in the plasma method. The main results were as follows: (1) In the case of ozone oxidation, the diffusion coefficient of oxygen in the insulator is much smaller than that in plasma oxidation. (2) Mg–O film thickness, which is formed by reaction immediately on the metal Mg surface, is thicker as compared with the Al case. (3) In the ozone oxidation method of metal films with the thickness of more than the film thickness formed by reaction, the oxidation is spontaneously stopped at the interface to the bottom Co–Fe. As a result, we succeeded in inducing a TMR ratio of 25% at room temperature in MTJs with Mg(1.3 nm)–O barrier with wider exposure range than in the plasma case.     

Field-and Current-Driven Magnetization Reversal and Dynamic Properties of CoFeB-MgO-Based Perpendicular Magnetic Tunnel Junctions

We report a perpendicular magnetic tunnel junction(p MTJ) cell with a tunnel magnetoresistance(TMR) ratio of nearly 200% at room temperature based on Co Fe B/Ta/Co Fe B as the free layer(FL) and a synthetic antiferromagnetic(SAF) multilayer [Pt/Co]/Ru/[Pt/Co]/Ta/Co Fe B as the reference layer(RL). The field-driven magnetization switching measurements show that the p MTJs exhibit an anomalous TMR hysteresis loop. The spin-polarized layer Co Fe B of SAF-RL has a lower critical switching field than that of FL. The reason is related to the interlayer exchange coupling(IEC) through a moderately thick Ta spacer layer among SAF-RLs, which generates a moderate and negative bias magnetic field on Co Fe B of RL. However, the IEC among RLs has a negligible influence on the current-driven magnetization switching of FL and its magnetization dynamics.     

Microscopic properties of Co/Pd multilayers studied by ferromagnetic and nuclear magnetic resonance

The microscopic properties of Co/Pd multilayers were studied by ferromagnetic and nuclear magnetic resonance. The anisotropy of the layer is found to decrease for decreasing Co sublayer thickness and a switching of the magnetic preferential direction occurs below 8Å. The anisotropy is also a function of the Pd layer thickness: below 20Å it increases with decreasing thickness. This is attributed to a decrease in the Pd/Co interface contribution to the anisotropy. Hyperfine field spectra show the layers with [111] texture to be mainly polycrystalline fcc. The spectra shift to lower hyperfine fields upon decreasing Co sublayer thickness. This is attributed to a decrease in the magnetic moment caused by stretching of the Co lattice due to neighbouring Pd atoms. The results were checked by experiments on almost single phased [100] fcc Co/Pd multilayers. The similarity with the results on the [111] layers suggests that the expansion of the Co lattice is nearly isotropic.     

Effect of Co layer thickness on structural and magnetic properties of C/Co/C films

Granular C/Co/C films have been prepared by magnetron sputtering from C and Co onto glass substrates at room temperature and subsequent in situ annealing. It has been found that the structure and magnetic properties of the C/Co/C films depend strongly on the Co layer thickness. Vibrating sample magnetometer measurements indicate that the in-plane coercivities reach maximum in 20 nm Co thickness of both as-deposited and annealed films. The squareness ratio of annealed films was more than 0.8. X-ray diffraction shows that majority Co nanograins are formed as the hexagonal-close-packed (HCP) structure in 20 nm Co thickness with annealing at 400 °C. Scanning probe microscope was used to scan surface morphology and magnetic domain structures. The values of the surface roughness were lower than 0.6 nm in all annealed samples. The average magnetic cluster size was estimated to be about 10 nm in annealed 20 nm Co thickness films.     

Strain induced epitaxial relationships of Cr on Co/Pd(111)

The growth and structure of Co ultra-thin films on Pd(111) and Cr on Co/Pd(111) have been analyzed by grazing incidence X-ray diffraction and low energy electron diffraction. It is shown that the in-plane lattice constant of the epitaxial Co film depends on the growth temperature. Although the strain decreases as a function of the Co film thickness, it persists for 20 monolayer (ML) films or even thicker. When Cr is deposited at room temperature on a strained Co film (10 to 20 ML thick) a Kurdjumov–Sachs epitaxial relationship is observed, whereas when Cr is deposited on a Co(0001) single-crystal or on a very thick Co film on Pd(111), a Nishyama–Wassermann orientation is obtained.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

A comparison of the magnetic anisotropy of [001] and [111] oriented Co/Pd Multilayers

Superlattices of [001]_fcc Co/Pd with varying Co thicknesses from one to eight atomic layers per modulation period were epitaxially grown on NaCl by vapour deposition in UHV. Transmission electron diffraction indicates lattice coherence between the Co and the Pd layers for Co thicknesses up to six atomic layers. If deposited at a substrate temperatureT _s=50°C, only the superlattices containing Ci-monolayers show perpendicular magnetization. By raisingT _s to 200°C, the perpendicular anisotropy for Co monolayers is increased, and is also observed for Co bilayers. We suggest that this is due tolayer smoothening, which increases Néel's interface anisotropy. For more than 6 atomic layers of Co a loss of coherence is observed atT _s=50°C, accompanied by a structure transformation to hcp Co with a (0001)_Co(111)_Pd orientation.Non-epitaxial polycrystalline [111]-multilayers have a different anisotropy versus thickness behaviour. For such multilayers the range of Co thicknesses giving perpendicular magnetization is extended from 8 Å up to 12 Å atT _s=200°C. The different behaviour of the single crystal [001] films is caused by a strong volume contribution to the anisotropy, which favours in-plane magnetization, opposing the perpendicular interface anisotropy. This easy-plane term is attributed to magneto-elastic anisotropy due to stretching of the Co layers, via a positive magnetostriction.     

Metal-Oxide Interfaces in Magnetic Tunnel Junctions

Metal-oxide interfaces play an important role in spintronics—a new area of microelectronics that exploits spin of electrons in addition to the traditional charge degree of freedom to enhance the performance of existing semiconductor devices. Magnetic tunnel junctions (MTJs) consisting of spin-polarized ferromagnetic electrodes sandwiching an insulating barrier are such promising candidates of spintronic devices. The paper reviews recent results of first-principle density-functional studies of the atomic and electronic structure of metal-oxide interfaces in Co/Al₂O₃/Co and Co/SrTiO₃/Co MTJs. The most stable interface structures, O-terminated for fcc Co (111)/-alumina(0001) and TiO₂-terminated with oxygens on top of Co atoms for fcc Co (001)/SrTiO₃(001) were identified based on energetics of metal-oxide cohesion at the interface. The covalent character of bonding for both the Co/alumina and Co/SrTiO₃ interface structures has been determined based on the pattern of electron distribution across the interface. The Al-terminated Co/alumina interface that corresponds to an under-oxidized MTJ exhibits a metallic character of bonding. The unusual charge transfer process coupled with exchange interactions of electrons in Co results in quenching of surface magnetism at the interface and substantial reduction of work of separation. The electronic structure of the O-terminated Co/Al₂O₃/Co MTJ exhibits negative spin polarization at the Fermi energy within the first few monolayers of alumina but it eventually becomes positive for distances beyond 10 Å. The Co/SrTiO₃/Co MTJ shows an exchange coupling between the interface Co and Ti atoms mediated by oxygen, which results in an antiparallely aligned induced magnetic moment on Ti atoms. This may lead to a negative spin polarization of tunneling across the SrTiO₃ barrier from the Co electrode. The results illustrate the important fact that spin-polarized tunneling in magnetic tunnel junctions is not determined entirely by bulk density of states of ferromagnet electrodes, but is also very sensitive to the nature of the insulating tunneling barrier, as well as the atomic structure and bonding at the ferromagnet/insulator interface.     

In situ resistivity and magnetoresistance studies of Co/Au(111) single layers and bilayers

We report here on resistance and magnetoresistance (MR) studies of ultrathin Co/Au(111) single sandwiches and bilayers with perpendicular magnetization. Resistance of the films was measured in situ in ultrahigh vacuum, during depositions and as a function of a perpendicular applied magnetic field. A large MR variation with the thickness of Au coverage was observed and compared to calculations. The coercive field of the Co films shows a drastic variation with the Au coverage thickness, which reflects the theoretical anisotropy variation. It was measured as a function of temperature. For the first time, the effect of interlayer interaction on the resistivity of a Co bilayer during the growth of Co top layer, is evidenced and compared to calculations. Finally, hysteresis loops of strongly antiferromagnetically coupled bilayers are investigated. Received 3 November 1998 and Received in final form 18 January 1999     

Pole density distributions in Co/Cr bilayers and magnetic properties

With regard to sputtered Co (50 nm)/Cr (thickness: T_Cr = 0–600 nm) bilayers on glass substrates, the (110) pole density distributions (PDD) of the bcc Cr layer and the (00·2) PDD of the post-deposited hcp Co layer were quantitatively measured by X-ray diffraction. It was found that with increasing T_Cr, a transition of preferred orientation (PO) occured in the Cr layer, affecting the PO of the Co layer and its magnetic properties.