大面积薄层二硫化铌的可控生长

大面积薄层二维材料的可控制备是材料物理研究领域的热点和难点之一. 本工作采用助熔盐辅助的化学气相沉积方法在云母衬底上可控制备了大面积二硫化铌薄层, 最大尺寸达到115 微米. 通过拉曼光谱、 电子显微表征技术进一步确认了化学气相沉积法制备出的二硫化铌为3R 相, 具有很好的单晶性. 本工作基于化学气相沉积方法为可控制备二维过渡金属硫化物提供了参考.     

1.3 GHz超导腔的电化学青铜法铌三锡镀膜技术

由于射频超导腔具有高品质因数Q₀,大束流孔径等诸多优势,已被加速器行业广泛应用。目前纯铌腔的性能已经接近理论极限,使用Nb₃Sn薄膜腔代替纯铌腔是突破这一限制的有效手段。铌三锡具有较高的超导转变温度和过热磁场,理论预期可以大幅度提高SRF腔体工作温度和加速梯度。目前,Nb₃Sn薄膜制备技术蓬勃发展,其中锡蒸汽扩散法已经比较成熟,已制备出初步满足工程需求的铌基铌三锡薄膜射频超导腔。但是由于反应温度在1100℃以上,锡蒸汽扩散法无法摆脱纯铌基底,因此不可避免地在机械稳定性、导热性等方面有缺陷,难以满足未来高可靠性加速器的应用。青铜法广泛应用于铌三锡线缆的制备,热处理温度不高于700℃,具有制备铜基铌三锡镀膜腔的潜力。此外,电化学镀膜与其他方式相比,具有成本低、反应过程容易控制、常温常压等明显优势。本工作将上述两种工艺结合起来,研究了电化学方式在1.3 GHz铌基超导腔上镀青铜前驱体,之后热处理合成铌三锡薄膜腔。垂测结果表明,4.2 K下的薄膜腔本征Q₀为6×10⁸左右且仍具很大提升...     

Nb_3Sn/Cu复合导体分流温度的定量计算

铌三锡是高磁场下实用的一种低温超导材料,分流温度是超导磁体的关键设计参数。文中采用超导体幂指数模型,定量计算了绝热条件下柱状铌三锡复合导体的分流温度,计算结果与现有的分流温度估算公式结果相符;另外还分别讨论了幂指数模型的中的指数n以及磁场对铌三锡复合导体分流温度的影响。结果可以为无液氦直接冷却系统中超导磁体的相关低温技术研究提供一定的数据参考。     

超导离子源铌三锡六极线圈镜像磁场约束结构的优化设计

中国科学院近代物理研究所正在进行国际首台45 GHz全铌三锡超导离子源FECR(Fourth Electron Cyclotron Resonance)磁体的研制,该离子源磁体线圈由六个铌三锡超导六极线圈和四个铌三锡超导螺线管线圈组成。由于单根超导线绕制异形六极线圈(非标准鞍型)技术难度大,且铌三锡超导性能对应力敏感,为了测试单个铌三锡六极线圈性能能否达到设计指标,基于铝合金壳层结构和Bladder-Key精确预紧技术,设计了镜像磁场约束结构。本工作主要阐述了运用ANSYS参数化设计编程对镜像磁场结构进行优化设计的过程和优化后的镜像磁场结构,确定了室温预应力大小,并给出了线圈经过室温预紧、冷却降温和加电励磁后的最大等效应力。进一步结合实际六极线圈制作公差(±0.1 mm),分析和评估了公差对镜像磁场结构中六极线圈预应力施加的影响。     

铌酸锂集成光子器件的发展与机遇

铌酸锂,作为应用最广泛的非线性光学晶体之一,近十年来由于薄膜铌酸锂晶圆的出现而再次获得了学术界与产业界的关注.基于薄膜铌酸锂的集成光电子器件的优越性能已在诸多应用中得到演示,例如光信息处理、激光雷达、光学频率梳、微波光子学和量子光学等. 2020年,薄膜铌酸锂器件通过光刻技术在6 in(1 in=2.54 cm)晶圆上的成功制备,推动了铌酸锂加工从实验室逐步走向工业化.薄膜铌酸锂光子器件的研究主要聚焦于利用电光、声光和二阶/三阶非线性效应进行光调制或频率转换;最近三年,掺杂稀土离子还成功赋予铌酸锂增益特性,实现了片上铌酸锂放大器和激光器.本文将简略回顾薄膜铌酸锂的发展过程,着眼于集成光子器件,介绍国内外研究组取得的进展、意义以及面临的挑战.     

纯铌酸锂晶体红外光谱的低温研究

测量了同成分纯铌酸锂的低温红外光谱,发现低温下铌酸锂晶体将会出现位于3200 cm^-1左右的新红外吸收峰.研究发现该峰与晶体中的氢离子无关,并且其峰强和峰形都随温度的升高发生复杂的变化.基于上述实验结果,认为该峰应该起源于电子在相邻的小极化子（Nb⁴⁺_Li）和自由极化子（Nb⁴⁺_Nb）之间的跃迁.另外,通过拟合发现新红外吸收峰可分解成三个高斯峰,这三峰应归因于能量有细微差别的三种跃迁. 关键词： 铌酸锂 红外吸收光谱 杂质缺陷     

基于单块周期极化铌酸锂晶体级联三倍频的440 nm蓝光固体激光器

阐述了一种基于单块周期极化铌酸锂晶体级联三倍频实现440 nm蓝光输出的实验方案。根据周期极化铌酸锂晶体的Sellmeier方程以及倍频与和频的相位匹配条件,在一块周期极化铌酸锂晶体上设计了两段不同的极化周期,使其在同一工作温度下能分别实现倍频与和频,在先后经过倍频与和频后,实现级联三倍频输出。实验采用Nd: YAG产生的1319 nm光作为基频光,重频400 Hz,脉宽110 ns,横向和纵向光束质量因子分别为1.81和2.65。耦合进周期极化铌酸锂晶体后,出射光中检测到660 nm的红光和440 nm的蓝光。通过调整工作温度和入射基频光功率,得到2.4 mW的最大蓝光输出,此时工作温度55.5 ℃,基频光功率530 mW。实验结果验证了单块晶体实现级联三倍频440 nm蓝光输出的可行性。     

1．5GHz锯材超导腔的研制

介绍铌材超导腔的研制进展，重点讨论了国产铌腔的材料改性，以及相应的超导腔性能的改进．叙述了１．５ＧＨｚ铌腔的腔形设计，分析了铌材的射频性能和机械性能，制定了铌腔制作与后处理的特定工艺．最后给出了１．５ＧＨｚ铌材超导腔的低温实验结果．     

1．5GHz锯材超导腔的研制

介绍铌材超导腔的研制进展，重点讨论了国产铌腔的材料改性，以及相应的超导腔性能的改进．叙述了１．５ＧＨｚ铌腔的腔形设计，分析了铌材的射频性能和机械性能，制定了铌腔制作与后处理的特定工艺．最后给出了１．５ＧＨｚ铌材超导腔的低温实验结果．     

三铌酸锂空间群的会聚束电子衍射测定

用会聚束电子衍射图中显现的动力学消光线,测定了三铌酸锂的空间群。结果表明,三铌酸锂有一2次螺旋轴和一垂直它的滑移面,从而空间群是P2₁/a。同时得出点阵参数a=1.545nm,b=0.503nm,c=0.753nm,β=107°。 关键词：     

Covalent-to-ionic transition in liquid zinc dichloride

We report molecular-dynamics simulations of self-diffusion and structure in a pseudoclassical model of liquid and crystalline ZnCl₂ over a wide region of the pressure-temperature plane. The model parameters are adjusted to reproduce a liquid structure of corner-sharing ZnCl₄ tetrahedra at the standard freezing point and the measured diffusion coefficients as functions of temperature on the sfp isobar. We find that compression first weakens the intermediate-range order of the melt near freezing into a fourfold-coordinated crystal structure, and then drives at higher temperatures a novel liquid-liquid transition consisting of two broad steps: (i) a transition in which the Zn atoms start to leave their tetrahedral cages, followed by (ii) a structural transition from a covalent network of Cl atoms to a dissociated ionic liquid which then freezes into a sixfold-coordinated crystal. Good agreement is found with data from X-ray diffraction experiments under pressure.     

Concerning the first-order phase transition in the low-dimensional organic superconductor (BEDO—TTF)2ReO4 · H2O. Crystal and electronic band structures below the phase transition (T = 170 K)

The effect of the first-order phase transition occurring around 220 K on the crystal and electronic structure of the molecular superconductor (BEDO-TTF) has been studied. The crystal structure at 170 K has been determined and it is found that the main structural change resulting from the phase transition is connected with a rotation of the anions. This rotation leads to changes in the SS and SO intermolecular contacts within the BEDO-TTF donor layers. How these structural changes affect the electronic structure of the salt is studied by comparing the transfer integrals for the different donordonor intermolecular interactions calculated for the room temperature and 170 K crystal structures. It is shown that Fermi surfaces for the 170 K and room temperature structures are very similar, do not exhibit nesting properties, and can be described as resulting from the hybridization of superposing ellipses. Received: 4 September 1997 / Received in final form: 2 December 1997 / Accepted: 3 December 1997     

High-Pressure Phase Transition in CTAB-Micellar Solutions： A Raman Spectroscopic Study

We use a diamond anvil cell for the first time to investigate the Raman spectra of an aqueous micellar solution of hexadecyltrimethylammonium bromide （CTAB） at pressures up to 3.85 GPa. The pressure-induced phase transition between the micellar and coagel phases is found to occur at 0.64 GPa and 60℃. This phase transition has a pressure hysteresis, and thus exhibits the first-order phase transition properties. Further experimental results show that although the structure of the coagel phase is similar to that of the CTAB crystal, the interchain distance is slightly larger in the coagel phase than that in the CTAB crystal.     

Induction of an atomically thin ferromagnetic semiconductor in 1T′ phase ReS2 by doping with transition metals

Two-dimensional 1T′ phase ReS₂, a transition metal dichalcogenide, has a unique structure and electronic properties that are independent of thickness. The pure phase is a nonmagnetic semiconductor. Using density functional theory calculations, we show that ReS₂ can be tuned to a magnetic semiconductor by doping with transition metal atoms. The magnetism mainly comes from the dopant transition metal and neighboring Re and S atoms as a result of competition between exchange splitting and crystal field splitting. ReS₂ doped with Co can be considered as a promising diluted magnetic semiconductor owing to its strong ferromagnetism with long-range ferromagnetic interaction, high Curie temperature (above room temperature) and good stability. These findings may stimulate experimental validation and facilitate the development of new atomically thin diluted magnetic semiconductors based on transition metal dichalcogenides.     

Laser induced single-crystal transition in polycrystalline silicon

Transition to single crystal of polycrystalline Si material underlying a Si crystal substrate of 〈100〉 orientation was obtained via laser irradiation. The changes in the structure were analyzed by reflection high energy electron diffraction and by channeling effect technique using 2.0 MeV He Rutherford scattering. The power density required to induce the transition in a 4500 ? thick polycrystalline layer is about 70 MW/cm² (50ns). The corresponding amorphous to single transition has a threshold of about 45 MW/cm².     

Superconductivity at 55K in Iron-Based F-Doped Layered Quaternary Compound Sm[O1-xFx]FeAs

We report the superconductivity in iron-based oxyarsenide Sm[O_1-xF_x]FeAs, with the onset resistivity transition temperature at 55.0K and Meissner transition at 54.6K. This compound has the same crystal structure as LaOFeAs with shrunk crystal lattices, and becomes the superconductor with the highest critical temperature among all materials besides copper oxides up to now.     

Dielectric and electro-optical properties of dye doped ferroelectric liquid crystal

Addition of dye in ferroelectric liquid crystal (FLC) results in change in many properties of FLCs which depend upon some basic properties of pure FLCs, dye molecular structure and its concentration in pure FLC. Present Letter reports dielectric and electro-optical studies of pure and dyed FLCs for this aspect.     

Theoretical studies on the high pressure phases of Lanthanum monochalcogenides

We report total energy and electronic structure calculations for lanthanum monochalcogenides in B1 (NaCl) and B2 (CsCl) crystal structures over a range of unit cell volumes. We employed the tight binding linear muffin-tin orbital approach to density functional theory within the local density approximation to expand the crystal orbitals and periodic electron density. In agreement with the experiment we find that B1 phase is lower in energy than B2 phase, and that the compounds transforms to B2 structure under applied pressure. This is the first qualitative prediction of the transition in La monochalcogenides and should be testable with diamond-anvil technique.     

Thermo‐tunable defect mode in one dimensional photonic structure based on grooved silicon and liquid crystal

A composite 1D photonic structure with defect was designed, fabricated by wet anisotropic etching of (110)‐oriented silicon and filled with liquid crystal. The polarized reflection spectra of the second‐order stop band with defect mode have been registered by means of FTIR microscopy. The thermo‐optical effect in the photonic structure due to phase transition in liquid crystal has been demonstrated in the spectral region of 8.5 µm. The relative shift of the defect mode peak was found experimentally to be 2.0% compared to 3.1% as predicted by calculation. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature dependence of aluminum nitride reflectance spectra in vacuum ultraviolet region

Temperature dependence of optical reflectance spectra in vacuum ultraviolet region for aluminum nitride has been measured on high-quality single crystal with synchrotron radiation. The dominant structure due to the interband transition is observed at photon energy around 7.7 eV. With decreasing temperature, the energy position of the dominant structure in the reflectance spectra shifts towards higher energy. The experimental data has been fitted to the Bose-Einstein expression and the obtained parameter related to the strength of the electron-phonon interactions is much smaller than that for the peak at 6.2 eV, suggesting that the higher-lying interband transition energy decreases more slowly with increasing temperature in aluminum nitride (AlN).