硅薄膜材料的光电导谱分析

利用甚高频等离子体增强化学气相沉积法（VHF-PECVD）,通过改变氢稀释比制备出一系列硅薄膜样品。由弱光条件下光电导谱分析了材料的吸收系数及缺陷态密度,结果表明随着氢稀释比的增加,材料的长波响应增大,缺陷态密度（NS）逐渐减小,当大于16.7时,NS开始增加,这是杂质与晶粒间界相互作用的结果。     

Approximation in Thin Film Brick-Wall Model

The thin film brick-wall model is an important method on calculating the entropy of the non-static black hole. But we can see in this paper that the approximation used in the thin film brick-wall model is a rate of two infinitesimal parameters in fact. in this paper, we make an exact calculation of the approximation term and give the solution in the Schwarzschild black hole space-time.     

BaTiO_3晶体薄膜PLD法生长工艺参量研究

采用脉冲激光沉积方法在单晶MgO基片上外延生长了BaTiO3晶体薄膜.为改善薄膜的结晶质量和表面粗糙度,研究并优化了生长工艺中生长温度和激光能量两个参量,并对薄膜样片实行原位退火.找到了BaTiO3薄膜在优先方向上的结晶效果,分析了结晶质量对生长温度的依赖关系和不同激光能量对结晶薄膜的表面粗糙度的影响.利用X射线衍射仪测定结晶效果与特性,原子力显微镜表征BaTiO3薄膜的结晶表面形貌与粗糙度.测试结果表明,在c轴取向生长BaTiO3薄膜,在(001)和(002)方向上都出现强度很高的尖锐衍射峰,具有较好的结晶质量和较小的表面粗糙度,原子力显微镜测定出薄膜的表面粗糙度为0.563nm.     

Compound Phase Formation in Thin Film Structures

Thin film compound formation during solid phase reaction, reactive deposition, ion-beam synthesis, and ion beam mixing is discussed in terms of the Effective Heat of Formation (EHF) model. This model defines an effective heat of formation ΔH′, which is concentration dependent. By choosing the effective concentration of the interacting species at the growth interface during solid phase reaction, to be that of the liquidus minimum, the model correctly predicts first phase formation during formation of silicides, germanides, aluminides, and other metal-metal binary systems. The ability to predict phase formation sequence and phase decomposition is also illustrated. The EHF model is also used to describe amorphous and metastable phase formation as well as the effect of impurities and diffusion barriers on phase formation. In the case of reactive deposition, the effective concentration is controlled by the rate at which thin film deposition is carried out and the temperature of the substrate. In this way epitaxial phases such as CoSi₂ and NiSi₂ can be formed directly at temperatures much lower than normally needed during solid phase reaction. During ion-beam synthesis silicon-rich compounds are expected to form during metal implantation into silicon- and metal-rich compounds for silicon implantation into a metal substrate. For ion-beam mixing, the effective concentration is not controlled by the mixing process at low temperatures, but by the liquidus minimum of the system at higher temperatures. For both ion-beam mixing and ion-beam synthesis, however, much work still needs to be done to correlate effective concentration with the various experimental parameters. The general trends of compound formation in these systems do, however, also correlate well with the predictions of the EHF model.     

Plasma Processes in Activated Thin Film Deposition

This paper deals with plasma aspects in physical and chemical vapour deposition processes. A systematic representation of deposition methods is given and possibilities of plasma diagnostic are summerized. Characteristic parameters of electron kinetics (mean free paths, collision frequencies, energy distribution functions) and rate equations for calculation of particle densities are discussed for a plasma in plasma activated physical vapour deposition device. Theoretical results are compared with measurements (T_e, N_e, E_z) in the plasma of a TiN_x-deposition device with hollow cathode arc evaporator. Mechanism of plasma polymerisation is discussed. Results of experimental investigations of the plasma in an Ar-hexamethyldisiloxane D.C. low pressure glow discharge are presented and compared with results of modelling of this plasma taking into account direct-, stepwise- and Penning-ionization. The necessivity of knowledge of reactive cross sections for understanding of plasma assisted thin film formation processes is accentuated.     

发光薄膜沉积技术中薄膜晶体管的优化设计

为了能制备高均匀性、大尺寸高清RGB-OLED显示终端,发展了一种全新的、无掩膜低成本的彩色薄膜沉积技术——薄膜晶体管导向的薄膜沉积技术,并研究了薄膜晶体管的宽长比及栅压对电聚合发光薄膜性能的影响,寻找最佳的制备条件。实验中采用像素尺寸大小为200μm×200μm的AMOLED基板,通过TFT来控制发光薄膜在ITO像素上的电化学聚合过程。首先对不同宽长比的TFT性能进行表征,再对不同宽长比的TFT在不同栅压条件下制备的电化学聚合薄膜进行表征和分析。实验结果表明,在同一宽长比的TFT控制下,施加栅压越大,制备的薄膜越厚,发光效果越好;在不同宽长比的TFT控制下,宽长比越大,聚合薄膜越厚,发光效果越好。在较大栅压下,选择宽长比为50μm/10μm的TFT最为适宜。研究结果为电化学聚合技术在AMOLED显示中的应用奠定了良好基础。     

Switching Effects in Plasmonic Circuits Based on Thin Metal Films and Nanostructures with High Photoconductivity

Optics and Spectroscopy - Specific features of optical control of propagation of surface plasmon polaritons in plasmonic circuits based on thin metal waveguides and semiconductor nanostructures are...     

红光激发下掺Ho3+氟化物薄膜的上转换发光

利用激光脉冲沉淀法制备了稀土Ho~(3 )掺杂的氟化物薄膜。观测到处于薄膜中的Ho~(3 )离子在632.8nm红光激发下的上转换发射。这些上转换发射包括:~5S_2→~5I_7,~5F_4→~5I_7和~5S_2→~5I_8。     

Photoconductivity and light-induced absorption in KNbO3:Fe

Measurements of photoconductivity and light-induced absorption in KNbO₃: Fe are performed at different light intensities and crystal temperatures. The results are interpreted in terms of a two-center charge transport model. Different model parameters may be evaluated from the experimental data. A complete set of parameters is suggested explaining the dependences of photoconductivity and light-induced absorption on light intensity and temperature for the KNbO₃: Fe crystal investigated.     

用作电致变色器件的LiNbO_3离子导体薄膜的研究

采用射频溅射方法制备用作电致变色器件的ＬｉＮｂＯ３薄膜，利用频率外推法和Ｗａｎｇｎｅｒ极化法对所沉积的ＬｉＮｂＯ３离子导体薄膜的离子电导率进行了测试和计算，给出了薄膜的光谱特性，分析和讨论了薄膜制备工艺对薄膜结构和离子电导率的影响和作用。     

Photoconductivity and dember effect in Zn3P21

The photovoltaic properties of Zn₂P₂ monocrystals in photoconductivity (PC) and Dember photovoltaic (D-PV) modes have been investigated in the 0.5–1.2 μm wavelength range. The analysis of long-wave edge and a possible application as a high-sensitivity detector are presented.     

纳米硅结构薄膜光致发光的温度依赖特性

综合考虑纳米硅结构薄膜的特殊性质,如量子限制效应、光学带隙和光跃迁振子强度对纳米硅粒径的依赖特性以及光学带隙和光辐射的温度依赖特性等,给出了一个解析表达式来分析具有一定粒径分布的纳米硅结构薄膜的光致发光(PL)强度分布,其中选取了两种纳米硅的粒径分布,即高斯分布和对数正态分布。结果表明,随着平均粒径和粒径分布偏差的减小,纳米硅薄膜的PL谱峰蓝移。随着环境温度的升高,纳米硅结构薄膜的PL谱峰红移且相对发光强度减弱。纳米硅结构薄膜光辐射拟合的结果与实验数据的比较分析表明,该模型能够很好地解释纳米硅结构薄膜在不同温度下的PL特性。     

多层有机薄膜电致发光器件

制备了以苯乙烯锘三苯胺衍生物为空穴传输层Ａｌｑ３为发光层的双层有机薄膜电致姨光器件。还把不同厚度的恶二唑衍生物加在ＳＡ和Ａｌｑ３之间制备了两种三层结构的有机薄膜电致发光器件，实现了ＳＡ的蓝色发光。进行了器件存放实验，发现了器件在大气中有较好的稳定性。     

白色有机薄膜电致发光

198 7年柯达公司 C.W.Tang发表的有机薄膜电致发光[1] 因其在平板显示技术中的巨大应用前景而成为当前研究的热点。白色发光因是实现全彩色平板显示的重要方案之一 ,而倍受人们的关注。目前已有一些有关白光的报道 ,J.Kido[2 ,3]利用多层结构及三种染料掺杂的polymer实现白光 ,S.R.Forrest[4 ] 利用叠层实现白光 ,Y.Sato[5] 用了一种新的掺杂剂得到白光 ,M.Granstrom[6 ]和 Y.Yang[7]报道了polymer的白色发射。在这篇文章中 ,将报道一种利用锁定层中掺杂染料来实现白色有机电致发光的器件 ,其最高亮度达 863 5 cd/ m2 ,最大效率为1 .3…     

Cs3Cu2I5晶体薄膜吸收谱的研究

本文测定了Ｃｓ３Ｃｕ２ Ｉ５ 晶体薄膜在室温及液氮温度下的吸收谱,并依此计算出该材料的激子参数,即激子束缚能ΔＥ（１）ｅｘ ＝ （０．５３±０．０７）ｅＶ,激子半径ａｅｘ ＝ ０．３２６ ｎｍ ,禁带宽度Ｅｇ ＝ （５．００±０．０７）ｅＶ。在谱分析的基础上,论证了Ｃｓ３Ｃｕ２Ｉ５ 的电子和激子激发定域在该晶体的ＣｕＩ亚晶格之中,同时,揭示了在低温下Ｃｓｘ Ｃｕ１－ ｘ Ｉ系列化合物的第一激子峰位置随其摩尔组分变化的规律。     

Photoconductivity in polyacetylene

The results of steady state photoconductivity experiments on cis- and trans-(CH)_x are interpreted in terms of charged solitons, photogenerated either directly (threshold hv = 4Δ/π) or indirectly through coupling of the lattice to electron-hole pair excitations (hv ? 2Δ). The transient photocurrent, after laser pulse excitation, decays as a power law, I(t) ? t^?0.6, suggesting dispersive transport of the photogenerated carriers.     

NH3等离子体后处理Co掺杂ZnO的薄膜结构及磁学性能

通过电化学沉积方法成功生长了Co掺杂ZnO的薄膜,但并没有实现室温下的铁磁性.通过NH3等离子体的后处理,导致有一部分N原子进入了ZnO晶格替代了一部分O格位,从而在ZnO中产生空穴.在空穴间接交换作用下,ZnCoO薄膜中产生了被束缚的磁极子,产生了室温下的铁磁性.     

Low-Temperature Baking Effect of the Radio-Frequency Nb_3Sn Thin Film Superconducting Cavity

The Nb_3Sn thin film cavity,having the potential to be operated at a higher temperature and higher gradient compared to the cavity made from bulk niobium,is one of the most promising key technologies for the nextgeneration radio-frequency superconducting accelerators.In our work,several 1.3 GHz single-cell TESLA-shaped Nb_3Sn thin film cavities,coated by the vapor diffusion method,were tested at Peking University and Institute of Modern Physics,Chinese Academy of Sciences.It was observed that the performance of the Nb_3Sn thin film cavities in the tests without the slow cooling down procedure and the effective magnetic field shielding was significantly improved by using a low temperature baking at 100℃ for 48 hours.Although the peak electric field of the cavity remained unchanged,the rapid drop of the unloaded Q value(Q_0) with the increasing accelerating field(Q-slope) was effectively eliminated,resulting in an improvement of the Q_0 in the intermediate field region by ～8 times.Furthermore,under better test conditions with the shielded magnetic field less than 5 mG and the slow cooling down procedure in the temperature range of 25-15 K,the Q_0 was still improved by about 20%.Our study shows that the low temperature baking can be an effective supplement to the effective post-treatment for the Nb_3Sn thin film cavity.     

Impurity Effects at Surfaces of a Photon-Dressed Bi_2Se_3 Thin Film

We investigate the impurity effects on surfaces of a thin film topological insulator, applied by an off-resonant circular polarized light. It is found that the off-resonant driving induces a quantized total Hall conductivity, when the driving strength is larger than a critical value and the Fermi level lies in the band gap, indicating that our system is converted into the topological phase. We also find that with the increasing disorder strength, the Dirac masses of top and bottom surfaces are renormalized and then fixed to half of their initial values, respectively,which will shrink the widths of the half-integer plateau of anomalous Hall conductivities.     

ITO材料在减反射膜设计中的应用

改变ITO材料通常作为透明导电膜单独使用的状况,将其作为减反射膜系中的一层,能够在很大程度上增加ITO透明导电膜在可见光部分的透过率.通过使用将ITO材料置于膜系的内层和最外层两类不同的设计思想,可以使ITO透明导电膜达到相当优良的应用效果.使用低压反应离子镀方法制备了设计的两类减反射膜系,实验证明,膜层在可见光部分的透过率显著提高,剩余反射率明显下降,并得到了平均透过率为95.83%,最高透过率达到97.26%,方块电阻为13.2～24.6Ω/□的试验结果.