Reduction of Electron Leakage of AlGaN-Based Deep Ultraviolet Laser Diodes Using an Inverse-Trapezoidal Electron Blocking Layer

To improve the optical and electrical properties of AlGaN-based deep ultraviolet lasers,an inverse-trapezoidal electron blocking layer is designed.Lasers with three different structural electron blocking layers of rectangular,trapezoidal and inverse-trapezoidal structures are established.The energy band,electron concentration,electron current density,P-I and V-I characteristics,and the photoelectric conversion efficiency of different structural devices are investigated by simulation.The results ...     

Optimization of AlGaN-Based Deep Ultraviolet Laser Diodes with Graded Rectangular Superlattice Electron Blocking Layer and Graded Trapezoidal Superlattice Hole Blocking Layer

Journal of Russian Laser Research - To improve the carrier confinement capability and optimize the performance of deep ultraviolet laser diodes (DUV-LDs), we propose the graded rectangular...     

电子阻挡层Al组分对GaN基蓝光激光二极管光电性能的影响

采用SiLENSe（Simulator of light emitters based on nitride semiconductors）软件仿真研究了Al_xIn_yGa_1-x-yN电子阻挡层（EBL）Al组分渐变方式对GaN基激光二极管（LD）光电性能的影响,实现了提高输出功率和电光转换效率的目的。文中提出的四种Al组分渐变方式分别是传统均匀组分、右阶梯渐变组分（0～0.07～0.16）、三角形渐变组分（0～0.16～0）、左阶梯渐变组分（0.16～0.07～0）。结果表明,与传统均匀组分EBL结构相比,Al组分阶梯渐变Al_xIn_yGa_1-x-yN EBL LD导带底的电子势垒显著提高,价带顶的空穴势垒降低。这主要是由于该结构能有效抑制电子泄漏和提高空穴注入效率,从而提高有源区载流子浓度,进而提高有源区辐射复合效率。当注入电流为0.48 A时,采用Al组分阶梯渐变Al_xIn_yGa_1-x-y...     

天然气管道泄漏可调谐二极管激光遥感探测的研究

天然气管道泄漏不仅造成经济损失而且是危险之源。传统的天然气管道泄漏检测技术效率低、速度慢,难以满足实际应用的需要。近年来以近红外二极管激光吸收光谱为基础的光学传感器由于具有灵敏度高、体积小、重量轻和无需维护等优点而得到了广泛的应用。文章以可调谐二极管激光吸收光谱和谐波探测技术为基础进行天然气管道泄漏遥感探测技术的研究,采用二次谐波与一次谐波信号的比值作为系统浓度标定,结果显示浓度与比值之间具有较好的一致性。文章还就不同地形散射体对探测结果的影响进行了测量和分析,实验结果表明二次谐波与一次谐波信号比值标定技术对便携式二极管激光光学测量能够很好的满足实际应用的需要。     

Line-Width Reduction of a Laser Diode Array Using an External Cavity with Two Feedback Mirrors

A novel Littman-Metcalf external cavity laser diode array with two feedback mirrors is introduced. The linewidth broadening effect caused by smile can be reduced by the novel external cavity. At the drive current of 16A, the line-width is narrowed to 0.1 nm from free-running width of 1.6 nm with output efficiency of 84%.     

Calculation of the Loss Coefficient of Amplified Luminescence in the Active Layer of a Laser Diode

A method to calculate the loss coefficient of amplified luminescence _loss ^lum in the active layer of a laser diode on the basis of radiation transfer equations and the balance between emission, amplification, and absorption of spontaneous radiation is suggested. The values of _loss ^lum and also of the density of fluxes of amplified luminescence have been determined in one- and two-dimensional approximations for laser diodes based on GaAs, GaN, and ZnSe compounds with different configurations of resonators.     

半导体激光微小振动实时干涉测量仪

设计了一种半导体激光干涉测量仪,可以实时测量物体的微小振动。通过信号处理电路对干涉信号进行分析,得到实际振动的振幅和频率。给出了具体的理论分析,实验结果验证了该干涉仪的实用性。     

Low-Threshold-Current and High-out-Power 660 nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R

We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80roW without kinks, and the maximum output power was 184roW at 22~C. The threshold current was 40 mA.     

Organic Light-Emitting Devices with a LiF Hole Blocking Layer

We introduce a thin LiF layer into tris-8-hydroxyquinoline aluminium （Alq3 ） based bilayer organic light-emitting devices to block hole transport. By varying the thickness and position of this LiF layer in Alq3, we obtain an electroluminescent efficiency increase by a factor of two with respect to the control devices without a LiF blocking layer. By using a 10nm dye doped Alq3 sensor layer, we prove that LiF can block holes and excitons effectively. Experimental results suggest that the thin LiF layer may be a good hole and exciton blocking layer.     

多重光反馈的激光自混合干涉

对多重光反馈的激光自混合干涉现象进行了实验观察,并基于含复合腔激光器结构,建立了系统模型,模型的仿真结果与实验结果相吻合,研究结果有助于设计高分辨的位移测量系统。     

分光技术在自由电子激光结合里德堡态氢原子飞行时间谱装置中的应用

本文描述了一种应用于自由电子激光结合高里德堡态氢原子飞行时间谱装置中的分光方法,以及该方法应用于小分子(如₂S)光解动力学研究中的必要性. 拉曼-α辐射(121.6 nm),用作H原子产物探测的激光,是在Kr/Ar气介质中利用四波混频产生的. 利用透镜对不同波长的光有不同的折射率,四波混频后的混合光在经过一片离轴的氟化锂透镜后,121.6 nm的激光将会与212.6和845 nm在空间上分开. 在激光到达反应中心前利用挡板挡住212.6和845 nm的激光,只让121.6 nm的光经过反应中心,从而消除212.6 nm激光产生的背景信号对实验的干扰. 结合自由电子激光,成功地研究了H₂S在122.95 nm波长下的光解动力学,采集到了产物时间飞行谱. 本文展示了转换得到的产物总平动能谱,解离机理与121.6 nm波长下的结果相似. 实验结果显示,该方法成功地解决了分子在VUV波段进行光解动力学研究的难题,消除了这些分子在紫外光波段因为强烈吸收而产生的背景信号.     

Effect of Mg-Preflow for p-AlGaN Electron Blocking Layer on the Electroluminescence of Green LEDs with V-Shaped Pits

In GaN-based green light-emitting diodes(LEDs) with and without Mg-preflow before the growth of p-Al GaN electron blocking layer(EBL) are investigated experimentally.A higher Mg doping concentration is achieved in the EBL after Mg-preflow treatment,effectively alleviating the commonly observed efficiency collapse and electrons overflowing at cryogenic temperatures.However,unexpected decline in quantum efficiency is observed after Mg-preflow treatment at room temperature.Our conclusions are drawn such that the efficiency decline is probably the result of different emission positions.Higher Mg doping concentration in the EBL after Mg-preflow treatment will make it easier for a hole to be injected into multiple quantum wells with emission closer to pGaN side through the(8-plane rather than the V-shape pits,which is not favorable to luminous efficiency due to the preferred occurrence of accumulated strain relaxation and structural defects in upper QWs closer to p-GaN.Within this framework,apparently disparate experimental observations regarding electroluminescence properties,in this work,are well reconciled.     

苯和苯胺在深紫外光照射下的电离和解离

本文利用自主研制的反射式飞行时间质谱仪结合177.3 nm深紫外激光研究了苯和苯胺分子的光电离与光解离过程. 质谱实验发现苯在177.3 nm皮秒激光作用下发生高效电离并观测到不对称C-C键解离形成的以C₄H₃⁺为主的较小碎片峰. 相比之下,苯胺的深紫外光电离中主要产生一个C₅H₆^+·离子自由基和一个较小丰度的C₆H₆^+·碎片,分别对应于CNH分子和NH自由基的去除. 结合第一性原理计算,诠释了苯和苯胺这两个仅有一个氨基差异的分子光解离路径,揭示苯和苯胺分子中氢原子转移对于C-C或C-N键断裂的关键重要作用.     

电子束蒸发沉积Ir膜真空紫外反射特性

Ir是一种重要的真空紫外反射材料,在太阳物理、宇宙物理、生命科学、大气物理、同步辐射等方面有着十分重要的应用.对电子束蒸发沉积Ir膜在真空紫外波段的反射特性进行了系统的理论和实验研究.根据吸收材料基底上单层金属膜数学计算模型,对不同基片上各种厚度的Ir膜真空紫外反射率进行了优化计算.根据计算和前期实验结果,采用电子束蒸发方法,在石英、K9玻璃基片上沉积了不同厚度的Ir膜,在入射波长120 nm处获得了近30%正入射反射率,对应的Ir膜厚度为12 nm.过厚或过薄均不利于Ir膜反射率的提高.经退火处理后,Ir膜中张应力有所释放但并未消除,同时晶粒平均尺寸显著增大,反射率下降.     

Development of New Nephelometer with Diode Laser

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Parameters to Define the Electron Beam Trajectory of a Double-Tapered Disc-Loaded Wideband Gyro-TWT in Profiled Magnetic Field

In the method of tapering the cross section of the interaction structure for broadbanding a gyro-TWT, the different portions of the interaction length of the tapered-cross-section waveguide become effective for different frequency ranges if the magnetic field and beam parameters are profiled to maintain the condition of electron cyclotron resonance throughout the interaction length. In the present paper, the study of profiling the magnetic field and beam parameters in steps of the stepped analytical model of a double-tapered disc-loaded circular waveguide was made throughout the steps of the model. In the observed profile, the magnetic flux density in a typical step relative to its value in first-step decreases from first-step (gun-end) to end-step (collector-end) of the model considering the up-tapering schemes, in which structure parameters increase from gun-end to collector-end. Also, the transverse beam velocity in a typical step relative to its value in first-step decreases from gun-end to collector-end. However, the Larmor radius in a typical step relative to its value in first-step as well as the hollow-beam radius in a typical step relative to its value in first-step, both increase from gun-end to collector-end in the model considering the up-tapering schemes.     

半导体激光器混合功率控制系统

依据半导体激光器输出功率的噪音特性，提出一种采用模糊控制与比例控制结合的模数混合控制方案，稳定半导体激光器的输出功率．实验结果表明，混合光功率控制器能够对频率在10^6Hz数量级内的高、低频噪音均能够有效地抑制．静态测量下，光源输出功率的短期稳定度达到±0．55‰，长期稳定度达到±0．7‰。     

激光二极管相干长度的压缩

激光二极管的相干长度在高频调制的驱动电流下可以减小，在实验中对一个９８０ｎｍ的激光二极管进行了测量，表明要干长度已减小了近２０倍。     

Design of an Optical Fiber Device for Pumping a Double-Clad Fiber Laser with a Laser Diode Bar

Pumping of a rare-earth-doped double-clad fiber laser with a GaAIAs laser diode bar requires imaging the near field output of a 1 cm long one-dimensional linear array of tens of multi-mode laser diode sources onto a two-dimensional oblong cross section approximately matching the fiber’s first cladding shape. This work describes the design and preliminary implementation of a device (here called a high brightness geometric transformer) that achieves this transformation with minimum brightness loss. This is done by imaging the laser diode bar near field using a fast cylindrical micro-lens onto a linear array of N (≈10) soft-glass, thin-clad rectangular fibers; in turn, the fibers’ output ends are arranged to form a stack that matches the required first cladding shape. For a typical 20W CW, laser diode bar with brightness of 25 mW·μm²·sr^-1, the geometric transformer output brightness is 0.6 mW·μm^-2·sr⁻¹, i.e., there is a ·40 intermediate loss of brightness. If the output of the geometric transformer is used to pump a Nd-doped double-clad fiber laser, an overall brightness gain of ·340 can be achieved.Presented at the International Commission of Optics Topical Meeting, Kyoto, 1994.     

Diode Heterostructures with a Ferromagnetic (Ga,Mn)As Layer

Physics of the Solid State - Diode p-(GaMn)As/n-InGaAs/n+-GaAs heterostructures with different thicknesses (from 5 to 50 nm) of the (Ga,Mn)As dilute magnetic semiconductor layer have been...