基于二维材料及其范德瓦尔斯异质结的光电探测器

近些年来,石墨烯、黑磷和过渡金属二硫化物以及其他二维材料受到了越来越多的关注。凭借其独特的结构和优异的电学、光学特性,这些二维材料在光电器件中得到了广泛应用,具有良好的发展潜力。本文概述了二维材料在光电探测器领域的最新研究进展,介绍了一些常见的二维材料及其制备方法,阐述了光电探测器件的基本原理和评价参数,以及回顾了二维材料及其异质结构在光电探测器中的应用,最后总结了该领域仍然面临的挑战并对其未来的发展方向进行了展望。     

基于液相法二维异质结的空间结构可控制备

The research in two-dimensional (2D) materials, such as graphene, transition metal dichalcogenides (TMDs) and black phosphorus, has been further flourished with the recent emergence of heterostructures composed of dissimilar 2D materials. The interfacing/coupling between different constituent components in a heterostructure has given rise to interesting phenomena and useful properties. For example, depending on the type of 2D materials, the distance and the kind of bonding between them, as well as the crystalline property of the hetero-interface, the interface may provide charge traps, exciton recombination centers, or bridges for effective charge/energy transfer. It has also been found that the spatial arrangement in addition to the composition of the constituents is an important factor influencing the overall properties of the heterostructures. Although many methods, such as dry transfer and vapor-phased growth are able to yield heterostructures from pristine or highly crystalline 2D crystals with spatial control, such as vertical heterostructures and lateral heterostructures, these methods are generally not scalable, which has restricted the use of the obtained heterostructures mostly to fundamental studies. The solution-phased synthesis methods, such as solvothermal/hydrothermal synthesis, electrochemical deposition and hot-injection method, may be more suitable for mass production of functional heterostructures despite the relatively low product quality. In the past couple of years, a diverse kinds of hetero/hybrid structures of 2D materials have been prepared successfully in wet-chemical processes. However, precise control over the geometric arrangement of the constituent components has been challenging in solution. Currently, four types of heterostructures including 2D crystals grown on a larger 2D template, vertical heterostructures, lateral heterostructures, and core-shell heterostructures have been prepared in solution. For the first type, flexible 2D nanosheets such as graphene and monolayer TMDs are used as synthesis templates to support the nucleation and growth of other 2D crystals. For vertical heterostructures, relatively rigid nanoplates are used to allow continuous deposition of 2D layers of other materials to form sandwich-like structures. The formation of lateral heterostructures requires edge growth on existing 2D materials without basal deposition, and therefore other methods such as cation exchange can be used as alternative routes. The preparation of core-shell 2D heterostructures generally involves both epitaxial edge growth and basal deposition and has been realized in both metallic and semiconductor structures. In this review, these kinds of heterostructures based on 2D materials will be discussed in terms of their synthesis methods, properties and possible applications. In addition, we will discuss the challenges and possible opportunities in this research direction.     

基于液相法二维异质结的空间结构可控制备（英文）

近年来,二维材料异质结构的兴起进一步促进了二维材料领域的发展。在异质结构中,不同组分的界面作用或耦合效应会产生有趣的现象和特殊的性质。目前发现除材料组分外,空间结构也是影响异质结构总体性质的重要因素。尽管诸如干法转移和气相生长的固相法能够将原始或高度结晶的二维晶体制备出空间可控的异质结构,但是它们在很大程度上受限于低产率和高成本的缺点。相比之下,液相法虽然产物质量相对较低,但更适用于大规模生产功能性异质结构。然而,如何对组分的三维空间布局进行精确控制仍是目前液相法亟待解决的问题。在这篇综述中,我们介绍了通过湿化学法制备二维异质结构的最新进展,聚焦于对二维异质结构空间布局的控制。在本文的末尾,我们还讨论了此领域面临的挑战和潜在的机遇。     

梯型2D/2D Bi2MOo6/BiOI范德华异质结的制备及CO2光还原性能(英文)

利用太阳能将CO₂还原为具有高能量附加值的含碳气相或液相燃料为解决能源枯竭和气候异常等问题提供一个有前景的方案.然而,由于CO₂光还原过程是上坡反应且具有高的反应能垒,目前光催化CO₂还原的转化效率仍然很低.为实现高效率CO₂光还原,半导体光催化剂需要有宽的光吸收范围、强的氧化还原能力和丰富的活性位点.但同时满足上述条件的光催化剂有限.在半导体中,BiOI具有1.8 eV的窄带隙,可以响应波长大于600 nm的可见光且具有很强的还原能力,因此广泛应用于CO₂光还原、全水分解和重金属离子还原等领域.此外,BiOI是一种典型的二维材料,交替的[Bi₂O₂]²⁺和I^-离子层会导致不同层间产生固有极化和内建电场(IEF).因此,BiOI可以凭借内在的IEF有效地实现电荷分离.然而,CO₂光还原还需要质子参与,而质子通常来自水氧化.但BiOI价带的氧化能力不足,影响CO_...     

AlAs/InSe范德华异质结构的光学和可调谐电子特性

由不同二维(2D)材料相互堆叠形成异质结构已成为目前的研究热点, 使用第一性原理的计算方法探究了AlAs/ InSe异质结构的几何结构、电子性能和光学性质. 结果表明, AlAs/InSe异质结构具有典型的Type-II型能带排列并且拥有着1.28 eV的间接带隙. 通过调节层间距或施加外部电场和应变, 可以有效地改变异质结构的带隙值. 有趣的是, 当应用5 V/nm的电场时, 异质结构实现了从Type-II向Type-I的转变. 此外, 与孤立单层相比, AlAs/InSe异质结构的吸光度明显提高, 特别是在紫外区域. 表明新型的二维AlAs/InSe异质结可以作为光电材料和紫外探测器件的有力候选者.     

原位制备SrSb2O6/g-C3N4新型二维异质结用于可见光催化降解四环素的研究

本文采用高温固相原位制备新型二维SrSb2O6/g-C3N4异质结光催化复合材料,并将其用于可见光催化降解四环素.通过XRD和FT-IR谱对其结构进行表征.光催化降解实验表明,异质结复合材料较母体g-C3N4和SrSb2O6而言,光催化效率均得到了提升.其中,异质结样品SSO-CN-2对四环素溶液具有最优的光催化降解效...     

低对称性二维ReS2及其异质结的化学气相沉积法制备及性质

二维硫化铼(ReS₂)是一种晶格对称元素少,纵向仅有原子级厚度的层状结构功能纳米材料。其晶体结构的低对称性使二维ReS₂具有丰富的各向异性理化性质,在微纳光子学、触觉传感器和各向异性电子器件等领域前景广阔。该类材料的应用开发依赖于高质量的合成和对其性质的深刻理解。本文首先从金属含铼前驱体、非金属含硫前驱体以及基底工程三个方面归纳了化学气相沉积法可控制备二维ReS₂的各种手段和生长机制。随后,按照合成步骤分“一步法”和“两步法”介绍了ReS₂水平和纵向异质结的制备最新进展。最后,综述了ReS₂在各向异性光学和电学方面的性质。本文还对二维ReS₂合成和性质研究的挑战和机遇提出了展望。     

二维材料范德华间隙的利用

Since their discovery, two-dimensional (2D) materials have attracted significant research attention owing to their excellent and controllable physical and chemical properties. These materials have emerged rapidly as important material system owing to their unique properties such as electricity, optics, quantum properties, and catalytic properties. 2D materials are mostly bonded by strong ionic or covalent bonds within the layers, and the layers are stacked together by van der Waals forces, thereby making it possible to peel off 2D materials with few or single layers. The weak interaction between the layers of 2D materials also enables the use of van der Waals gaps for regulating the electronic structure of the system and further optimizing the material properties. The introduction of guest atoms can significantly change the interlayer spacing of the original material and coupling strength between the layers. Also, interaction between the guest and host atom also has the potential to change the electronic structure of the original material, thereby affecting the material properties. For example, the electron structure of a host can be modified by interlayer guest atoms, and characteristics such as carrier concentration, optical transmittance, conductivity, and band gap can be tuned. Organic cations intercalated between the layers of 2D materials can produce stable superlattices, which have great potential for developing new electronic and optoelectronic devices. This method enables the modulation of the electrical, magnetic, and optical properties of the original materials, thereby establishing a family of 2D materials with widely adjustable electrical and optical properties. It is also possible to introduce some new properties to the 2D materials, such as magnetic properties and catalytic properties, by the intercalation of guest atoms. Interlayer storage, represented by lithium-ion batteries, is also an important application of 2D van der Waals gap utilization in energy storage, which has also attracted significant research attention. Herein, we review the studies conducted in recent years from the following aspects: (1) changing the layer spacing to change the interlayer coupling; (2) introducing the interaction between guest and host atoms to change the physico-chemical properties of raw materials; (3) introducing the guest substances to obtain new properties; and (4) interlayer energy storage. We systematically describe various interlayer optimization methods of 2D van der Waals gaps and their effects on the physical and chemical properties of synthetic materials, and suggest the direction of further development and utilization of 2D van der Waals gaps.     

二维原子-分子异质结的制备及其类脑器件应用

类脑计算因模仿人脑高效且低能耗的信息处理特性,成为解决冯·诺依曼计算机架构在能源效率和处理速度方面瓶颈的有力方案.然而类脑计算器件中传统异质结构存在的性能单一、制作困难、结合力差等问题限制了技术的应用.新型二维原子-分子异质结(2DAMH)通过在二维材料表面共价修饰功能性分子提供的稳定性和功能可调性为类脑器件领域带来了新的机遇.本综述总结了2DAMH在电子特性、合成策略及类脑器件应用方面的最新进展,尤其是在定制界面特性及模拟生物突触功能上的潜力.尽管共价修饰在精确性、规模化生产和理论完善度等方面仍面临挑战,但不断涌现的创新研究正在积极探索解决方案,展现出在类脑计算智能系统中实现更高效、更节能计算模式的巨大潜力.     

异质结材料及其表面金属膜的俄歇能谱研究

本文阐述主要使用AES研究单层或多层InP/InGaAsP异质结材料的界面,发现晶格失配会引起组分缓变。另外也分析了各种不同温度下的欧姆接触,观察到各金属之间及金属/半导体界面上的相互扩散情况。     

Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry

In this study, a series of SnS_2-xSe_x (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical–vapor transport method. The crystal structural and material phase of SnS_2-xSe_x layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS_2-xSe_x compounds was measured in the temperature range of 20–300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS_2-xSe_x were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.     

The crystal and molecular structure of N-(17-methoxy-phenyl)-2-chloropyrrolo (2,3- b ) quinoline

N-(17-methoxy-phenyl)-2-chloropyrrolo (2,3-b) quinoline was solved by direct methods and refined to anR of 0.104 for 950 observed reflections. The intensity data were collected by the multiple film equi-inclination Weissenberg technique and estimated visually. The packing of the molecule is stabilised by van der Waals interaction. The pyrrolo (2,3-b) quinoline ring system is planar and the methoxy phenyl ring is approximately perpendicular to the plane of this ring system with a dihedral angle of 86.5°.     

Theoretical study of potential energy surface and vibrational spectra of ArF2 system

An ab initio potential energy surface (PES) of ArF2 system has been obtained by using MP4 calculation with a large basis set including bond functions. There are two local minimums on the PES: one is T-shaped and the other is L-shaped. The L-shaped minimum is the global minimum with a well depth of -119.62 cm- 1 at R = 0.3883nm. The T-shaped minimum has a well depth of -85.93cm -1 at R = 0.3486 nm. A saddle point is found at R = 0.3486 and θ = 61° with the well depth of -61.53 cm-1. The vibrational energy levels have been calculated by using VSCF-CI method. The results show that this PES supports 27 vibrational bound states, and the ground states are two degenerate states assigned to the L-type vibration.     

The Weak Interaction on CO2 …CO van der Waals Complex : A Theoretical Study

The geometries of van der Waals complex CO2…CO were optimized at DFT and second-order Moller-Plesset perturbation(MP2) levels with the large basis set,three stable structures were found.The most stable structure has a T-shape geometry in which the CO lies along the C2 axis of CO2,with the two C atoms direct contact and R(C…C)=0.3227nm.The corresponding energies of the most stable structure were calculated by means of MP2,MP4D,MP4DQ,MP4SDTQ,MP4SDQ,CCSD and CCSD(T) methods,The BSSE (basis set superposition error) wads eliminated by the Boys-Bernardi counterpoise correction(CP) method.According to thermodynamics data.van der Waals complex CO2…CO can found at a low temperature and or a high pressure,There is a little charge transferred between the two interacted subunits.In the most stable structure,CO2 is the acceptor and CO is the donor.     

Adsorption and dissociation of the methanethiol (CH3SH) molecule on the Fe(100) surface

These contributions explore interaction modes between the methanethoil (CH₃SH) molecule and the Fe(100) surface via implementing accurate density functional theory (DFT) calculations with the inclusion of van der Waals corrections. We consider three adsorption sites over the Fe(100) surface, namely, top(T), bridge (B), and hollow (H) sites as potential catalytic active sites for the molecular and dissociative adsorption of the CH₃SH molecule. The molecular adsorption structures are found to occupy either B or T sites with former sites holding higher stability by 0.17 eV. The inclusion of van der Waals corrections refound to slightly alter adsorption energies. For instance, adsorption energies increased by ~ 0.18 and ~ 0.21 eV for B and T structure, respectively, in reference to values obtained by the plain generalized gradient approximation (GGA) functional. A stability ordering of the dissociation products was found to follow the sequence (CH₄, S) > (CH₃, S, H) > (─SCH_3, H) > (─CH₃, SH). The differential charge density distributions were examined to underpin prominent electronic contributing factors. Direct fission of C─S bond in the CH₃SH molecule attains exothermic values in the range 2.0 to 2.1 eV. The most energetically favorable sites for the surface-mediated fission of the thiol's S─H bond correspond to the structure where the ─SCH₃ and H are both situated on hollow sites with an adsorption energy of −2.43 eV. Overall, we found that inclusion of van der Waals functional to change the binding energies more noticeably in case of dissociative adsorption structures. The results presented herein should be instrumental in efforts that aim to design stand-alone Fe desulfurization catalysts.     

Dynamical and Mechanical Insights into the Li(2S)+ HCl( ) Reaction: A Detailed Quantum Wavepacket Study

Quantum wave packet dynamics of the Li(²S)+HCl( ) reaction in its electronic ground state is studied. The initial state-selected and energy-resolved dynamical attributes such as reaction probability, integral cross section, and thermal rate constant for the Cl-abstraction and H-abstraction pathways are reported. All partial wave contributions of J up to 120 were found to be necessary for the title reaction up to the collision energy of ∼1.0 eV. The dynamical results reveal that the Cl-abstraction is more favored over the H-abstraction for the different rovibrational (v, j) excitations. Due to the existence of an early barrier in the potential energy surface, the cross sections increase with increasing collision energy. The rate constants also monotonously increase with temperature for both channels. Resonances are identified and characterized in terms of eigenfunctions and lifetimes. Nearly 120 well-resolved eigenstates are reported for the LiHCl complex, and they are categorized as van der Waals (vdW), barrier and product states according to the nodal progressions along (R, r, γ). The vdW resonances reveal a local-mode behavior of quasibound type at low energies and extended progressions at high energies. Further, the single-quantized periodic orbit type is also observed in the barrier region, which decays very fast. Finally, the lifetime analysis reveals that the vdW resonances can survive as long as ∼2.2 ps, which is much longer than the lifetime of the resonances in the barrier region.     

van der Waals corrected density functional calculations of the adsorption of benzene on the Cu (111) surface

We investigate the performance of several van der Waals (vdW) functionals at calculating the interactions between benzene and the copper (111) surface, using the local orbital approach in the SIESTA code. We demonstrate the importance of using surface optimized basis sets to calculate properties of pure surfaces, including surface energies and the work function. We quantify the errors created using (3 × 3) supercells to study adsorbate interactions using much larger supercells, and show non‐negligible errors in the binding energies and separation distances. We examine the eight high‐symmetry orientations of benzene on the Cu (111) surface, reporting the binding energies, separation distance, and change in work function. The optimized vdW‐DF(optB88‐vdW) functional provides superior results to the vdW‐DF(revPBE) and vdW‐DF2(rPW86) functionals, and closely matches the experimental and experimentally deduced values. This work demonstrates that local orbital methods using appropriate basis sets combined with a vdW functional can model adsorption between metal surfaces and organic molecules.     

5水合甘氨酸复合体的结构和性能的理论研究

为了探讨“几个水分子导致甘氨酸两性离子复合体与其中性分子复合体等能”, 采用mp2/6-31＋＋g**//b3lyp/6- 31＋＋g**方法研究了甘氨酸水化的微观机理, 发现答案是5个水分子, 并证实了实验结果. 最稳定的5水合甘氨酸两性离子复合体具有双链结构, 与最稳定的5水合甘氨酸中性分子复合体能量接近(仅相差2.26 kJ/mol), 能够共存; 中性复合体和两性复合体之间可以通过直接质子迁移和桥助质子迁移等两种途径相互转化, 双链结构的甘氨酸复合体中质子迁移的能垒较低甚至无垒, 能够自发进行.     

Atomistic study of GaSe/Ge(111) interface formed through van der Waals epitaxy

Layered materials can be grown on various substrates through van der Waals epitaxy (vdWE) regardless of lattice mismatch. The atomistic study of the film-substrate interface in vdWE is becoming increasingly important due to their expected applications as two-dimensional (2D) materials. In this contribution, we have grown GaSe thin films on Ge(111) substrates by molecular beam epitaxy and studied the GaSe/Ge(111) interface using high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). Cross-sectional HAADF-STEM observations revealed that the grown layers adopt predominantly the expected wurtzite-like structure and stacking, but layers with zinc-blende-like structure, similar to Ga₂Se₃ but apparently different, and other layer stacking sequences, exist locally near the film-substrate interface. These results demonstrate that even in vdWE, structural changes can occur in the grown layers adjacent to the substrate, highlighting the importance of such interface for synthesizing and applying ultimately thin 2D materials.