Magnetic Anisotropy Induced by Orbital Occupation States in La_(0.67)Sr_(0.33)MnO_3 Films

Interface engineering is an effective and feasible method to regulate the magnetic anisotropy of films by altering interfacial states between films.Using the technique of pulsed laser deposition,we prepared La_(0.67)Sr_(0.33)MnO_3(LSMO) and La_(0.67)Sr_(0.33)MnO_3/SrCoO_(2.5)(LSMO/SCO) films on(110)-oriented La_(0.3)Sr_(0.7)Al_(0.65)Ta_(0.35)O_3 substrates.By covering the SCO film above the LSMO film,we transformed the easy magnetization axis of LSMO from the [001] axis to the [110] axis in the film plane.Based on statistical analyses,we find that the corresponding Mn-Mn ionic distances are different in the two types of LSMO films,causing different distortions of Mn-O octahedron in LSMO.In addition,it also induces diverse electronic occupation states in Mn~(3+) ions.The eg electron of Mn~(3+)occupies 3 z~2-r~2 and x~2-y~2 orbitals in the LSMO and LSMO/SCO,respectively.We conclude that the electronic spin reorientation leads to the transformation of the easy magnetization axis in the LSMO films.     

Effect of Terraces at the Interface on the Structural and Physical Properties of La_(0.8)Sr_(0.2)MnO_3 Thin Films

Employing atomic force microscopy,transmission electron microscopy and the second harmonic generation technique,we carefully explore the structural properties of 6-unit-cell-thick La_(0.8)Sr_(0.2)MnO_3 films grown on SrTiO_3 with atomically flat TiO_2-terminated terraces on the surface.The results clearly demonstrate that the terraces on the surface of TiO_2-terminated SrTiO_3 can improve the layer-by-layer epitaxial growth of the manganite films,which results in uniform film coverage at the beginning of growth and thus reduces the substrate-induced disorder at or near the interface.Comparing the magnetic and transport properties of La_(0.8)Sr_(0.2)MnO_3 films with the thicknesses varying from 6 unit cells to 80 unit cells grown respectively on as-received SrTiO_3 and TiO_2-terminated SrTiO_3,it is found that these atomically flat terraces on the surface of TiO_2-terminated SrTiO_3 can greatly enhance the Curie temperature and conductivities of the ultrathin La_(0.8)Sr_(0.2)MnO_3 films with thickness less than 50 unit cells,while no obvious difference is detected in the magnetic and transport properties of the 80unit-cell thick films.     

Transport and magnetoresistance effect in an oxygen-deficient SrTiO_3/La_(0.67)Sr_(0.33)MnO_3 heterojunction

An oxygen-deficient SrTiO3/La0.67Sr0.33MnO3 heterojunction is fabricated on an SrTiO3 （001） substrate by a pulsed laser deposition method. The electrical characteristics of the heterojunction are studied systematically in a temperature range from 80 K to 300 K. The transport mechanism follows I ∝ exp （eV/nkT） under small forward bias, while it becomes space charge limited and follows I ∝ Vm（T） with 1.49〈 m 〈1.99 under high bias. Such a heterojunction also exhibits magnetoresistance （MR） effect. The absolute value of negative MR monotonically increases with temperature decreasing and reaches 26.7% at 80 K under H=0.7 T. Various factors, such as strain and oxygen deficiency play dominant roles in the characteristics.     

Abundant photoelectronic behaviors of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3 junctions

Temperature dependence on rectifying and photoelectronic properties of La_(0.67)Sr_(0.33)MnO_3/Nb:SrTiO_3(LSMO/STON) junctions with the thickness values of LSMO film varying from 1 nm to 54 nm are systematically studied. As shown experimentally, the junctions exhibit good rectifying properties. The significant differences in photoemission property among the LSMO/STON junctions are observed. For the junction in a thicker LSMO film, the photocurrent shows a monotonic growth when temperature decreases from 300 K to 13 K. While for the junction in an ultrathin LSMO film, the behaviors of photocurrent are more complicated. The photocurrent increases rapidly to a maximum and then smoothly decreases with the decrease of temperature. The unusual phenomenon can be elucidated by the diffusion and recombination model of the photocarrier.     

Antiferromagnetic interlayer coupling of (111)-oriented La_(0.67)Sr_(0.33)MnO_3/SrRuO_3 superlattices

We report a strong antiferromagnetic(AFM) interlayer coupling in ferromagnetic La_(0.67)Sr_(0.33)MnO_3/SrRuO_3(LSMO/SRO) superlattices grown on(111)-oriented SrTiO_3 substrate. Unlike the(001) superlattices for which the spin alignment between LSMO and SRO is antiparallel in the in-plane direction and parallel in the out-of-plane direction, the antiparallel alignment is observed along both the in-plane and out-of-plane directions in the present sample. The low temperature hysteresis loop demonstrates two-step magnetic processes, indicating the coexistence of magnetically soft and hard components. Moreover, an inverted hysteresis loop was observed. Exchange bias tuned by the temperature and cooling field was also investigated, and positive as well as negative exchange bias was observed at the same temperature with the variation of the cooling field. A very large exchange field(H_(EB)) was observed and both magnitude and sign of the H_(EB)depend on the cooling field, which can be attributed to an interplay of Zeeman energy and AFM coupling energy at the interfaces. The present work shows the great potential of tuning a spin texture through interfacial engineering for the complex oxides whose spin state is jointly determined by strongly competing mechanisms.     

Transport properties and anomalous fatigue effect of Ag/Bi_(0.9)La_(0.1)FeO_3/La_(0.7)Sr_(0.3)MnO_3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.1FeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I–V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I–V curves combined with C– f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I–V cycle state, this structure shows more than one order increase of resistance after 100 cycles of "I–V curve training". The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.1FeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field–induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.1FeO3 interface.     

Effects of Si surficial structure on transport properties of La_(2/3)Sr_(1/3)MnO_3 films

La_(2/3)Sr_(1/3)MnO_3 films are deposited on(001) silicon substrates,in which the silicon surfaces have artificially been treated into the scallops-like,pyramid-like,and smooth polishing structure,by pulsed laser deposition.The magnetoresistances of the films on etched substrates under low applied field are very sensitive to the applied field,and much larger(14.3% for acid-etched,and 42.9% for alkali-etched) than that on the polished Si at 5 K.Zero-field-cooled and field-cooled magnetization behaviors are measured and analyzed.Remarkable upturn behaviors in temperature-dependent resistivity for all samples are observed at low temperature,which follows the Efros-Shkloskii variable range hopping law and the Arrhenius law.We believe that the rough surface may be useful in device design.     

La_(0.5)Sm_(0.2)Sr_(0.3)MnO_3/Ag_x中的室温磁电阻增强

用固相反应法制备La0.5Sm0.2Sr0.3MnO3/(Ag2O)x/2(x=0.00,0.04,0.08,0.25,0.30)样品,通过M～T曲线,ρ～T曲线,ρ～T拟合曲线,研究样品的磁性质、输运行为、输运机制及磁电阻效应.结果表明:少量掺杂时Ag可能参与反应.掺杂量较多时,Ag主要以金属态分离到母体颗粒的界面处,使体系形成两相复合体.少量的Ag掺杂可以明显提高自旋相关散射产生的晶界磁电阻.掺Ag为30%摩尔比时,样品的电阻率较低掺杂样品的电阻率降低一个数量级,在300K、0.5T磁场下,磁电阻明显增强,达到9.4%,这与颗粒母体界面结构的改善有关,也与材料电阻率的降低有关.     

La_(2/3/)Sr_(1/3)MnO_3单晶的低场磁热效应

本文对La2/3Sr1/3MnO3单晶中b和a(c)轴方向的磁热效应进行了研究,由于晶体的磁晶各向异性,磁热效应表现出一定的各向异性.通过不同温度下的等温起始磁化曲线的实验分析表明,在外加场为10kOe的情况下,b和a(c)轴方向的磁熵变-ΔSM(H)在370K达到最大值,分别为1.942Jkg-1K-1和1.873Jkg-1K-1.低场下较大的磁熵变是由于磁化强度随外场迅速变化以及自旋-晶格的耦合造成的.La2/3Sr1/3MnO3单晶在低场下表现出相对较大的磁热效应,表明其在磁制冷方面有一定的潜在应用价值.     

Co掺杂对铁磁金属La0.8Sr0.2MnO3磁电阻影响机理

通过对La_0.8Sr_0.2Mn_1-yCo_yO₃(y≤02)饱和磁矩和输运的测量,研究了Co对La_0.8Sr_0.2MnO₃的磁电阻影响机制.结果表明,在La_0.8Sr_0.2Mn_1-yCo_yO₃（y≤02）中Co³⁺离子是低自旋态.由于Mn³⁺—O—Co³⁺—O—Mn³⁺类型的磁交换与Mn³⁺-Mn⁴⁺离子间双交换作用相比较弱,Curie温度T_C附近的磁电阻随着Co掺杂量的增加而降低.与此相反,由于Co²⁺离子与e_g巡游电子的反铁磁交换耦合作用,低温区间的磁电阻随着Co掺杂量的增加而升高. 关键词： 低自旋 磁电阻 磁交换作用     

Raman光谱研究厚度对La0.9Sr0.1MnO3/Si薄膜结构的影响

通过溶胶-凝胶旋涂方法结合后退火工艺在Si（100）上制备了不同厚度的La_0.9Sr_0.1MnO₃（LSMO）薄膜,利用X射线衍射（XRD）和共焦显微拉曼散射（Raman）研究了LSMO/Si（100）薄膜的微结构．研究结果表明90 nm厚的LSMO薄膜具有正交相结构,当厚度大于150 nm时,薄膜具有菱方相结构. 150 nm厚的薄膜的Raman图谱中,490 cm^-1和602 cm^-1正交结构 关键词： 薄膜 1-xSr_xMnO₃')" href="#">La_1-xSr_xMnO₃ 共焦显微拉曼 微结构     

共格外延的La_(0.7)Sr_(0.3)MnO_3薄膜的应变弛豫

厚度为7～100nm La0.7Sr0.3MnO3(LSMO)薄膜是由脉冲激光法生长在(001)(LaAlO3)0.3(Sr2AlTaO6)0.7(LSAT)衬底上.薄膜的结构演变是由高分辨X-射线ω-摇摆曲线及倒易空间(103)反射来表征.我们的结果表明所有的LSMO薄膜是共格生长在LSAT(001)上.对厚度大于(或等于)22nm的LSMO薄膜既显示可调制的单斜(MA)结构,也包含切应变弛豫诱导的有序畴结构和平面内超格子.薄膜的厚度依赖的结构畴宽,以及切应变对薄膜居里温度Tc的影响被仔细研究.作为对比,晶格失配对LSMO薄膜中周期畴形成的影响也被讨论.     

Mo低掺杂La0.67Sr0.33MnO3的磁电特性及室温磁电阻增强

采用固相反应法成功制备了Mo低掺杂La0.67Sr0.33Mn1-xMoxOc(x=0,0.02)单相多晶样品,系统研究了样品的磁性、电输运特性和磁电阻效应.发现Mo低掺杂对La0.67Sr0.33MnO3 的居里温度影响很小,但在La0.67Sr0.33MnO3铁磁基态背景下诱导出团簇自旋玻璃态行为.在低温区(0.1相似文献   

Modulation of ultrafast laser-induced magnetization precession in BiFeO_3-coated La_(0.67)Sr_(0.33)MnO_3 thin films

The ultrafast laser-excited magnetization dynamics of ferromagnetic(FM) La_(0.67)Sr_(0.33)MnO_3(LSMO) thin films with BiFeO_3(BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique.Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect.The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films,which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.     

High resistance modulation by the electric field based on La_(0.9)Sr_(0.1)MnO_3/SrTiO_3/Si structure

A field-effect configuration based on La0.9Sr0.1MnO3/SrTiO3/Si structure is fabricated on Si substrate by laser molecular-beam epitaxy. The resistance modulation by electric field of the La0.9Sr0.1MnO3/SrTiO3/Si structure is investigated in detail. An evident resistance modulation effect is observed at 80 K. The channel resistance modulation by field effect reaches 1.4×107% and 2.6×106% when VDS are -2 and -6.5 V, respectively. The ON/OFF ratio of approximately 4000 is obtained. The present results are wort...     

钙钛矿氧化物异质结的研究进展

在过去几年中,为了研究钙钛矿氧化物异质结的物性和潜在的应用前景,我们进行了许多探索。在本文中,我们总结了对钙钛矿氧化物异质结一些物理性质的理论描述,揭示了La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3异质结中发现的正磁电阻效应和横向光电效应的物理起源。我们提出的理论模型将有助于理解界面对钙钛矿氧化物异质结各种性质的影响。     

氧缺陷导致的结构无序对La_(2/3)Sr_(1/3)MnO_3薄膜电输运特性的影响(英文)

为了澄清结构无序对电输运特性,特别是低温下电阻极小的影响,采用脉冲激光沉积方法在LaAlO3(100)基片上制备了两类La2/3Sr1/3MnO3薄膜.一块是在通40Pa氧气的气氛下沉积,沉积后不再进行通氧气的原位退火.另一块在同样通40Pa氧气的气氛下沉积,但沉积后再在6×104Pa的氧气气氛下进行原位退火.对两种薄膜的结构,磁特性和电输运特性进行了对比研究.结果表明:氧缺陷导致了薄膜结构的无序,更导致了类似自旋玻璃行为的磁无序.电输运特性结果表明原位退火使得薄膜的金属-绝缘体转变温度Tc从约195K提高到335K.对由于结构无序的存在对低温电阻较小行为的影响作了系统对比研究,曲线拟合的结果表明对于缺氧薄膜和进行了原位退火的薄膜的低温电阻较小行为的主要影响因素分别是类近藤散射作用和电子-电子相互作用,这一结果对于澄清庞磁电阻锰氧化物体系的低温电阻极小现象有一定积极意义.     

Magnetic transition behavior of perovskite manganites Nd_(0.5)Sr_(0.3)Ca_(0.2)MnO_3 polycrystalline

A polycrystalline sample Nd_(0.5)Sr_(0.3)Ca_(0.2)MnO_3 is prepared by the conventional solid state reaction method. The structure and magnetic properties are investigated with x-ray diffraction(XRD) patterns, a superconducting quantum interference device(SQUID), and electron spin resonance(ESR). The sample is in single phase with the space group Pbnm symmetry. With the decrease of temperature, Nd_(0.5)Sr_(0.3)Ca_(0.2)MnO_3 undergoes three magnetic transitions: ferromagnetic transition at TC≈ 210 K, charge-ordering at TCO≈ 175 K, and antiferromagnetic transition at TN= 155 K. In addition, the activation energy Ea ≈ 52.78 me V can be extracted by curve fitting.     

Preparation of La_(0.67)Ca_(0.23)Sr_(0.1)MnO_3 thin films with interesting electrical and magnetic properties via pulsed-laser deposition

<正>Manganese oxides with a perovskite-type Re_(1-x)D_xMnO_3(Re:heavy rare-earth elements,D:divalent alkali metal)structure have attracted interest because of the complex interaction between their electrons,lattices,and spins[1-5].Generally,manganese oxides with the structure Re_(1-x)D_xMnO_3 have special properties.For example,the half-metallic manganites,such as La_(2/3)Sr_(1/3)MnO_3 and La_(2/3)Ca_(1/3)MnO_3,wherein the conduction electrons are completely spin polarized,exhibit     

Anisotropic transport properties in the phase-separated La_(0.67)Ca_(0.33)MnO_3/NdGaO_3 (001) films

The anisotropic transport property was investigated in a phase separation La_(0.67)Ca_(0.33)MnO_3(LCMO) film grown on(001)-oriented Nd GaO_3(NGO) substrate. It was found that the resistivity along the b-axis is much higher than that along the a-axis. Two resistivity peaks were observed in the temperature dependent measurement along the b-axis, one located at 91 K and the other centered at 165 K. Moreover, we also studied the response of the resistivities along the two axes to various electric currents, magnetic fields, and light illuminations. The resistivities along the two axes are sensitive to the magnetic field. However, the electric current and light illumination can influence the resistivity along the b-axis obviously, but have little effect on the resistivity along the a-axis. Based on these results, we believe that an anisotropicstrain-controlled MnO_6 octahedra shear-mode deformation may provide a mechanism of conduction filaments paths along the a-axis, which leads to the anisotropic transport property.